Description
FSM 413 C2C Automatic Wafer and Thin Film Thickness Measurement System
Substrate and tape total and individual thicknesses, warpage, and TTV Measurement. Able to measure with or without backing tape. For wafer back-grind and etch thinning processes control. Non-contact Echoprobe or VITE Technology. Thin film and surface roughness options.
Thickness and total thickness variation (TTV) mapping system. TTV and Thickness of wafer substrate, thick layers, wafers on tape, bonded wafers, etc. Fully automated cassette to cassette system, SECS/GEM compliant. Warp, Roughness, and Thin Film Thickness measurement options.
The FSM 413 C2C Automatic Wafer and Thin Film Thickness Measurement System is a fully automated semiconductor metrology platform designed for high-precision, non-contact wafer thickness measurement, thin film thickness characterization, and Total Thickness Variation (TTV) analysis.
Manufactured by Frontier Semiconductor Measurements (FSM), the FSM 413 C2C combines patented Echoprobe™ infrared interferometry technology with fully automated cassette-to-cassette robotic wafer handling. The system supports semiconductor wafers up to 300 mm and is compatible with SMIF and FOUP wafer handling systems.
The FSM 413 C2C is designed for semiconductor manufacturing, wafer thinning, backgrinding, advanced packaging, MEMS fabrication, TSV development, and compound semiconductor applications involving Si, GaAs, InP, SiC, glass, quartz, sapphire, and compatible polymer materials.
Key Features and Benefits
- Fully Automated Cassette-to-Cassette Operation: Robotic wafer loading and unloading for automated semiconductor metrology.
- SMIF and FOUP Compatibility: Supports semiconductor manufacturing automation requirements.
- Non-Contact IR Interferometry: Patented Echoprobe™ technology for high-precision wafer and substrate thickness measurement.
- Wafer Sizes Up to 300 mm: Supports automated thickness measurement of semiconductor wafers up to 12 inches.
- Single-Probe Thickness Range: 15–780 µm for silicon substrates.
- Dual-Probe Thickness Range: Up to 3 mm total thickness measurement.
- High Measurement Repeatability: ±0.2 µm (1σ) for single-probe measurements and ±0.8 µm (1σ) for dual-probe measurements.
- Small Measurement Spot: 6–40 µm spot size.
- Automatic Thickness Mapping: Programmable measurement points and automated wafer mapping.
- Total Thickness Variation: TTV measurement with statistical analysis and 2D/3D color maps.
- Optional High-Precision XY Stage: 0.5 µm precision for automated mapping.
- Optional Pattern Recognition: Targeted measurements on patterned wafers.
- Bonded Wafer Measurement: Supports Si/Si, Si/Tape, and Glass/Si bonding uniformity evaluation.
- Thin Wafer Applications: Specialized measurement capability down to 1 µm for thin silicon wafers.
- MEMS and TSV Metrology: Supports trench depth, TSV depth, etch uniformity, and related measurements.
- Optional Advanced Metrology: Surface roughness, bump height, trim depth, and trim width measurements.
- Bow and Warp Analysis: Additional substrate deformation characterization capabilities.
FSM 413 C2C Technical Specifications
| Parameter | FSM 413 C2C Specification |
|---|---|
| Manufacturer | Frontier Semiconductor Measurements (FSM) |
| Equipment Model | FSM 413 C2C |
| Equipment Type | Automatic Wafer and Thin Film Thickness Measurement System |
| System Configuration | Fully automated cassette-to-cassette |
| Measurement Technology | Non-contact infrared interferometry |
| Sensor Technology | Echoprobe™ IR interferometry |
| IR Wavelength | 1.3 ± 0.03 µm |
| Measurement Spot Size | 6–40 µm |
| Working Distance | Approximately 20 mm |
| Maximum Wafer Size | 300 mm (12 inches) |
| Single-Probe Silicon Thickness Range | 15–780 µm |
| Dual-Probe Thickness Range | Up to 3 mm |
| Single-Probe Repeatability | ±0.2 µm (1σ) |
| Dual-Probe Repeatability | ±0.8 µm (1σ) |
| Thin Silicon Wafer Capability | Down to 1 µm for specialized applications |
| Wafer Handling | Fully automated robotic cassette-to-cassette loading |
| Automation Compatibility | SMIF and FOUP systems |
| XY Stage Precision | 0.5 µm (optional) |
| Measurement Points | Programmable |
| Thickness Mapping | 2D and 3D color maps |
| Measurement Results | TTV, Mean, Maximum, Minimum, Standard Deviation |
| Pattern Recognition | Optional |
| Surface Roughness Measurement | Optional |
| Bump Height Measurement | Optional |
| Trim Depth and Width Measurement | Optional |
| Microscope Option | Available for silicon via depth measurement |
Note: Published measurement ranges and repeatability are based on the manufacturer’s FSM 413 C2C specifications. Optional measurement functions and special thin-wafer capabilities require the appropriate system configuration.
FSM 413 C2C System Dimensions and Facility Requirements
The FSM 413 C2C is available in different equipment configurations for semiconductor wafer thickness measurement applications.
| Facility Parameter | Published Specification |
|---|---|
| FSM 413-200 Dimensions | 26″ W × 36″ D × 56″ H |
| FSM 413-300 Dimensions | 46″ W × 32″ D × 86″ H |
| System Weight | 500 lbs (approximately 227 kg) |
| Electrical Power | 110/220 VAC, 50/60 Hz, single phase |
| Vacuum Requirement | >25″ Hg (600 mm) @ 50 cc/sec |
| Wafer Handling | Automatic cassette-to-cassette robotic handling |
| SMIF / FOUP Compatibility | Supported |
Facility specifications are based on the manufacturer’s published FSM 413 C2C datasheet. Final utility connections and installation requirements should be confirmed for the selected equipment configuration.
Single-Probe and Dual-Probe Measurement Configurations
The FSM 413 C2C supports single-probe measurement and an optional dual-probe configuration for different semiconductor substrate thickness measurement applications.
| Feature | Single Probe | Dual Probe |
|---|---|---|
| Thickness Range | 15–780 µm | Up to 3 mm |
| Repeatability | ±0.2 µm (1σ) | ±0.8 µm (1σ) |
| Measurement Application | Substrate thickness and TTV measurement | Total thickness measurement of compatible substrates and wafer stacks |
| Non-Transparent Materials | Limited by IR transmission | Supports total thickness measurement of non-transparent materials, including metals |
Working Principle – Echoprobe™ Infrared Interferometry
The FSM 413 C2C uses patented Echoprobe™ infrared interferometry technology for non-contact semiconductor wafer thickness measurement.
The system operates at an infrared wavelength of 1.3 ± 0.03 µm and measures optical reflections from material interfaces to determine substrate thickness.
For suitable IR-transmitting substrates, single-probe interferometry can measure thickness based on reflected optical signals and the material’s optical properties.
The optional dual-probe configuration extends measurement capability to total thickness measurement of materials that are not transparent to infrared light, including metals.
The measurement system uses a spot size of 6–40 µm and a working distance of approximately 20 mm.
Fully Automated Cassette-to-Cassette Wafer Handling
The FSM 413 C2C integrates robotic wafer handling with semiconductor thickness metrology.
Its fully automated cassette-to-cassette configuration supports wafer loading, measurement, and unloading without requiring manual handling of each wafer.
The system is compatible with SMIF and FOUP wafer handling systems, supporting automated semiconductor manufacturing applications.
- Fully automated wafer loading and unloading
- Robotic wafer transfer
- Cassette-to-cassette operation
- SMIF and FOUP compatibility
- Programmable wafer measurement locations
- Automatic thickness mapping
- Automated measurement data collection
- Wafer-to-wafer thickness comparison
Total Thickness Variation (TTV) and 2D/3D Thickness Mapping
The FSM 413 C2C supports automated thickness measurement at programmable locations across semiconductor wafers.
Thickness measurement data can be used to calculate Total Thickness Variation (TTV) and evaluate substrate thickness uniformity.
Measurement Data and Analysis
- Total Thickness Variation (TTV)
- Mean thickness
- Maximum thickness
- Minimum thickness
- Standard deviation
- 2D thickness color maps
- 3D thickness color maps
- Programmable measurement points
An optional high-precision XY stage provides 0.5 µm positioning precision for automated measurement mapping.
Ultra-Thin Wafer and Backgrinding Applications
The FSM 413 C2C supports wafer thickness characterization for semiconductor backgrinding, chemical etching, and thin wafer manufacturing applications.
Its non-contact infrared interferometry measurement method is useful for evaluating thin semiconductor substrates without direct mechanical contact from the measurement probe.
- Ultra-thin silicon wafer thickness measurement
- Wafer backgrinding thickness uniformity
- Chemically etched wafer thickness measurement
- Thin wafer substrate characterization
- Wafer thickness mapping
- Backgrinding process development
- Thin wafer process qualification
The manufacturer identifies specialized thickness measurement capability down to 1 µm for thin silicon wafers. The published standard single-probe silicon thickness range is 15–780 µm.
Bonded Wafer and Multilayer Thickness Measurement
The FSM 413 C2C supports thickness measurement and bonding uniformity characterization for compatible multilayer wafer structures.
The manufacturer identifies applications involving:
- Silicon-to-silicon bonded wafers
- Silicon wafers mounted on tape
- Glass-to-silicon bonded wafers
- Compatible multilayer semiconductor substrates
- Wafer bonding uniformity analysis
- Advanced packaging substrate characterization
The optional dual-probe system extends total thickness measurement capabilities to non-transparent materials, including metals.
MEMS, TSV and Advanced Semiconductor Metrology
The FSM 413 C2C supports advanced semiconductor measurement applications involving MEMS fabrication, through-silicon vias (TSV), wafer bonding, and etched semiconductor structures.
Available Measurement Applications
- Trench depth measurement
- TSV depth measurement
- Etch uniformity measurement
- Scribe uniformity measurement
- Via depth measurement
- Epoxy thickness measurement
- Bonding uniformity analysis
- Bow and warp analysis
- Silicon via depth measurement with microscope option
Optional Advanced Measurement Functions
- Surface roughness measurement
- Bump height measurement
- Trim depth measurement
- Trim width measurement
- Pattern recognition for targeted wafer measurements
- High-precision XY stage
Optional measurement functions require the corresponding equipment configuration.
Semiconductor and Compound Semiconductor Applications
Silicon Semiconductor Manufacturing
- Silicon wafer thickness measurement
- Wafer thickness uniformity analysis
- Backgrinding process monitoring
- Wafer thinning process development
- Advanced semiconductor packaging
- Bonded wafer characterization
- MEMS and TSV development
GaAs and InP Semiconductor Applications
The FSM 413 C2C supports compatible GaAs and InP substrate thickness measurements using infrared interferometry.
- GaAs wafer thickness measurement
- InP wafer thickness measurement
- Compound semiconductor wafer thinning
- Thin substrate characterization
- RF semiconductor manufacturing
- Photonic semiconductor process development
SiC, Sapphire, Glass and Quartz Applications
The manufacturer identifies SiC, glass, quartz, and sapphire among the supported substrate materials.
- SiC substrate thickness measurement
- Sapphire wafer thickness measurement
- Glass substrate thickness measurement
- Quartz substrate thickness measurement
- Advanced semiconductor material characterization
MEMS and Advanced Packaging Applications
- MEMS substrate thickness measurement
- Trench and via depth characterization
- TSV process development
- Wafer bonding uniformity
- Bump height measurement
- Thin wafer thickness inspection
- Advanced packaging substrate metrology
Computer and Measurement Software
The FSM 413 C2C provides programmable measurement locations and automated thickness data collection.
Published measurement outputs include:
- Total Thickness Variation (TTV)
- Mean thickness
- Maximum thickness
- Minimum thickness
- Standard deviation
- 2D thickness color maps
- 3D thickness color maps
Optional pattern recognition supports measurement at selected locations on patterned semiconductor wafers.
FSM 413 C2C Automatic Wafer Thickness Measurement System Inquiry and Quotation
SemiStar Corp. welcomes inquiries from semiconductor manufacturers, compound semiconductor fabs, MEMS manufacturers, advanced packaging facilities, universities, research institutes, and semiconductor process development laboratories.
For an FSM 413 C2C equipment inquiry, please provide the wafer size, substrate material, minimum and maximum wafer thickness, cassette or FOUP requirements, single-probe or dual-probe configuration, and any optional measurement requirements such as TTV, TSV depth, trench depth, bump height, surface roughness, or bow and warp analysis.
Equipment availability, configuration, pricing, delivery schedule, and commercial terms are subject to confirmation.
Frontier Semiconductor Measurements (FSM) – Semiconductor Metrology Equipment
SemiStar Corp. is a distributor of Frontier Semiconductor Measurements (FSM) semiconductor metrology equipment, providing measurement solutions for semiconductor manufacturing, compound semiconductor fabs, MEMS, advanced packaging, universities, and research laboratories.
FSM specializes in semiconductor wafer metrology and electrical characterization, including thin film stress, wafer bow, wafer curvature, wafer thickness, Total Thickness Variation (TTV), sheet resistance, four-point probe (4PP), and thin film adhesion testing. FSM measurement systems are available in desktop, semi-automatic, and fully automatic cassette-to-cassette configurations, depending on the equipment model.
FSM Semiconductor Metrology Equipment Models
- FSM 128NT / FSM 128L: Thin film stress, wafer bow, and wafer curvature measurement systems.
- FSM 128 C2C / FSM 128L C2C: Automated cassette-to-cassette thin film stress, wafer bow, and curvature measurement systems.
- FSM 500TC: High-temperature thin film stress and wafer curvature measurement system.
- FSM 900TC / FSM 900TC-VAC: High-temperature wafer stress and curvature measurement systems, including vacuum configurations.
- FSM 900TC C2C / FSM 900TC-VAC C2C: Fully automated cassette-to-cassette high-temperature stress and curvature measurement systems.
- FSM 413 MOT: Desktop wafer and thin film thickness measurement system using Echoprobe™ infrared interferometry.
- FSM 413 SA: Semi-automatic wafer and thin film thickness measurement system with enclosure.
- FSM 413 C2C: Fully automatic cassette-to-cassette wafer thickness, thin film thickness, and TTV measurement system.
- FSM 4PP: Contact four-point probe and non-contact sheet resistance measurement systems, including tabletop and automated cassette-to-cassette configurations.
- FSM MELT: Modified Edge Liftoff Test system for thin film and film stack adhesion measurement.
- FSM Aquaflex: Four-point bend film adhesion testing system for low-to-medium adhesion samples.
Semiconductor Metrology Applications
FSM equipment supports semiconductor process development, wafer characterization, thin film deposition evaluation, ion implantation, diffusion, metallization, wafer thinning, wafer bonding, MEMS fabrication, and advanced semiconductor manufacturing.
Contact SemiStar Corp. for FSM semiconductor metrology equipment selection, technical specifications, system configurations, and quotations.