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Perkin-Elmer 4400

As new commercial and industrial technologies emerged and grew, so did the use of sputtering as a technique for deposition thin films of desired characteristics. The Perkin Elmer 4400 and Perkin Elmer 2400 Series sputtering systems were designed to meet the changes of this changing technical environment, whether in development or production.

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Description

Model Perkin-Elmer 4400

Category:  Sputter

Original Equipment Manufacturer: Perkin-Elmer

Condition: Used. We sell them at complete, working, functional test with OEM specifications and the following customized configuration.

  • DC magnetron Sputter, RF Diode Sputter, RF magnetron Sputter
  • 1-4 of cathode.

    Perkin-Elmer 4400 Sputtering Deposition Equipment Delta Cathode

    Perkin-Elmer 4400 Sputtering Deposition Equipment Delta Cathode

  • small sample to 6 inch wafer
  • 1-2 gas lines with MFC
  • RF Etch
  • Bias function
  • Loadlock heating function
  • Chamber heating function (Occupy one cathode port).
  • Co-Sputter function
  • Reactive sputter function

Price: Please contact us

Quantity: 4

Valid Time: Subject to prior sale without notice

Lead Time: TBD

Location: U.S.A.

Warranty: 3 to 9 months.

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Perkin-Elmer Sputter System Information for your reference only.

As new commercial and industrial technologies emerged and grew, so did the use of sputtering as a technique for deposition thin films of desired characteristics. The Perkin Elmer 4400 and Perkin Elmer 2400 Series sputtering systems were designed to meet the changes of this changing technical environment, whether in development or production.

With an installed base of more than thousands of systems, Perkin-Elmer was a leading supplier of sputter deposition equipment for high technology application in 1990’s. The Perkin Elmer 2400 Series sputtering systems were used not only in the production of semiconductor devices but also in the development and manufacturing of thin film recording heads, thin film resistors and capacitors, optical coatings, gallium arsenide lasers and fiber optics.

Quality, performance and stability backed by more than two decades of experience in vacuum technology and UHV design were built into every Perkin Elmer sputtering system. The Perkin-Elmer4400 and Perkin-Elmer 2400 Series were designed for flexibility offering a wide range of operating and process modes. The highest quality construction and components assure reliable operation and an ultra clean vacuum environment to yield consistently reproducible results. Every Perkin Elmer sputtering system was supported by years of technological experience and backed by a worldwide sales and service organization dedicated to prompt courteous service.

The Perkin Elmer4400 and Perkin Elmer2400 Series of sputtering systems represent just one part of the Perkin Elmer Semiconductor Equipment Group’s unique “one source” approach to cost-effective VLSI production. From mask making to photolithography, dry etching and sputtering deposition, the Semiconductor Equipment Group provides an integrated line of performance-proven production equipment specially designed to address each critical process. This “one source” solutions designed to meet the semiconductor industry’s demands throughout the 1980’s.

Versatile Systems For Any Sputtering Need

The Perkin Elmer 4400 Series, designed specially for high throughput production environments, features a high capacity load lock and a broad range of operating models to accommodate virtually any thin film coating requirement.

  • High Throughput

The Perkin-Elmer4400 Series fast cycle load lock, cryogenic pump, and full flood Meissner trap ensures quick turnaround on batch loads. High throughput are achieved for a full range of substrate sizes and shapes.

  • High Yield

A rotating substrate table for multi-pass deposition helps assure high uniformity and run-to-run repeatability. Simplicity of mechanical design with a minimum number of moving parts in the process chamber minimizes the generation of defect-causing. Easy loading pallet designs reduce wafer breakage. Consistently clean vacuum conditions assure reproducible high quality films.

  • Optimum Process Control

The Perkin-Elmer4400 Series provides a broad choice of target materials, machine operating models, pressure and gas controls, cathode configurations and power levels. Operating models include DC magnetron, RF magnetron, RF diode, bias sputter, reactive sputter, co-sputter and RF etch.

  • Total Control of Critical Film Characteristics

The Perkin-Elmer 4400 Series systems yield excellent films for a wide variety of materials including aluminum alloys, platinum silicide, titanium-tungsten, nichrome-gold, silicon nitride, silicon dioxide, precious metals and permalloy.

Deposition Of Thin Film for VLSI Geometries

Perkin-Elmer 4400 Series System configurations

No single cathode design can effectively meet the varied needs of different users or even the possible multiple needs of one user. Every film requires an optimum combination of target material, size, and shape for its most efficient fabrication. Recognizing these realities, the Perkin Elmer 4400 Series provides two distinct cathode configurations: 8″ circular and delta-shaped.

  • Perkin Elmer 4400

A general purpose sputtering system employing up to three 8″ diameter circular cathodes in DC magnetron, RF magnetron, or RF diode configurations. Power options are available up to 2 kw RF and 5 kw DC.

  • Perkin Elmer 4410

A delta target sputtering system designed for high rate deposition of metals and metal alloys. The Perkin Elmer4410 is also adaptable to the deposition of dielectrics and employs up to three delta-shaped cathodes in DC magnetron, RF magnetron, or RF diode configuration. Power options are available up to 3 kw RF and 10 KW DC.

  • Perkin Elmer 4450

A delta target sputtering system, similar to the Model Perkin Elmer4450 with load lock pumping and heating incorporated as standard features.

  • Perkin Elmer 4480

A delta target sputtering system of identical design to Model 4480 but including cassette-to-cassette loading as a standard feature.

As VLSI geometries routinely approach the one to two micron region, new problems arise in thin film deposition technology, dry etched vertical walls, deep vias and multiple level structures must all be uniformly covered with no microcracks or cusping. Film deposition systems must be able to provide uniform conformal coverage of these tightly packed structures to minimize interconnect resistances and maximize yields.

Substrate heating has improved step coverage of LSI structures by increasing the surface mobility of the depositing atoms. Additional techniques are now being used to further enhance coverage of planar-magnetron-sputtered films. Perkin Elmer 4400 and Perkin Elmer 2400 Series sputtering systems utilize “multi-pass” design and RF bias to maximize film coverage of VLSI structures.

As geometrical features get smaller, new materials will be employed. Metallization layers now include the use of diffusion barriers and low resistance gate and interconnect materials such as refractory metal silicides.

Substrate Motion

By utilizing rotating substrate table, Perkin Elmer sputtering systems allow wafers to be coated by multiple passes through the target region. This technique can minimize shadowing effects sometimes encountered in the single pass mode or center-to-edge effects found in static deposition systems, while maximizing target material utilization, step coverage and device yield.

RF Bias

The application of RF bias to the substrate re-sputters deposited material from horizontal surfaces onto the surrounding vertical walls of the wafer. Step coverage of 50% or more can be achieved on vertical steps and deep vias can be uniformity covered with RF bias and multi-pass technologies.

Co-sputtering

The deposition of contamination-free, low-resistance refractory metal silicides request the use of the purest materials. Co-sputtering provides the optimum method for depositing these films from pure elemental targets, wile providing a convenient means to control the stoichiometry of the films. Oxygen and carbon contamination and target-to-target stoichiometric non-uniformities are minimized using dual target sputtering and multi-pass techniques.

High Vacuum Technology for Maximum Process Control

  • Fast Cycle Load Lock Operation

The Perkin Elmer 4400 Series high capacity load lock system eliminates the need to break vacuum; thereby reducing both pumpdown time and contamination of targets and internal chamber surfaces. Transfer of a full pallet load of wafers from air to the process chamber and pumpdown to a base pressure of 5X10-7  Torr  can be accomplished in less than 3.5 minutes.

  • Contamination-free Cryogenic Pump

The process chamber vacuum system incorporates a contamination-free, closed cycle, two-stage helium cryopump (turbomolecular pump optional). Under load conditions, 70oK is maintained in the first stage and less than 15oK in the second stage. This assures efficient, rapid pumping of most atmospheric gases and reduction of partial pressures of most unwanted gas species to acceptable levels. An ultimate vacuum of 10-6  scale can be attained with typical pumping speeds of 1000 l/s for nitrogen, 1100 l/s for hydrogen and 4200 l/s for water vapor.

  • The Meissner Trap

A full flood Meissner trap mounted in the process chamber maintains an efficient pumping speed for water vapor of 30,000 l/s during deposition or sputter etching. The Meissner trap pumps water vapor at a maximum rate even with the high vacuum cryopump throttled. This assures good quality films in critical processes such as the deposition of aluminum alloys.

  • Substrate Degassing

The Perkin Elmer 4400 Series systems can be equipment with load lock heating and turbomolecular pumping to degas substrates prior to processing and minimize pumpdown for critical processes such as the deposition of aluminum alloys and other oxidizable metals. This further reduces the partial pressure of undesirable gases such as water vapor.

  • Vacuum Control

All Perkin-Elmer 4400 Series systems are equipped with ion and thermocouple gauges. A wide-range gauge controller monitors and digitally displays vacuum levels from 10-11 to 200 microns providing continuous monitoring of operating pressure. Additional thermocouples provide inputs to the automatic pumpdown control and automatic lock control.

The Circular Cathode Systems-Model 4400

Model 4400 is designed for use in production environments or process development. Up to three 8-inch circular cathodes and a 350oC quartz lamp heater may be installed in the process chamber to accommodate a variety of processes. An optional RF power sputtering network enables the RF/RF Co-deposition of two different materials. Precise stoichiometries of graded interface may be easily achieved.

The Model 4400 is routinely used for such processes as the deposition of Cr-Co for recording discs, Cr-Cu for backside metallization, TaSi2 for gate metallization and Si3N4 for interlayer dielectric.

Chrome-Cobalt

A precise ratio of chrome to cobalt is readily achieved with co-deposition using the RF power splitting option, ideal film temperature in the range 170 oC-200 oC can be easily obtained for optimum grain growth and orientation.

Chrome-Gold

The films resulting from the sputter deposition of chrome-gold are superior to those obtained from evaporation processes, pre-etching prior to deposition removes native oxide improving film adhesion and RF magnetron deposition results in lower thin film temperature and less gold interdiffusion.

Tantalum Silicide

Tantalum silicide of any desired stoichiometry is easily deposited with co-sputtering using the RF power splitting module. Annealed film resistivity of approximately 2.3 ohms per square can be obtained from a typical 2000 angstrom film of tantalum silicide. Within further advances in process technology, the UHV design of the 4400 will enable it to accommodate the deposition of refractory metal silicide films of even higher resistivities.

Silicon Nitride

With RF bias deposition, silicon nitride films exhibiting low pin-whole count, good step coverage and low stress can be readily deposited in the model 4400.

The RF Power Split Module

The two-way adjustable RF Power Split Module provides precise control of the level and ratio of RF energy from a single RF generator to two 8″ diameter cathodes simultaneously. A total of 2 kw may be applied with power ratio adjustable between 5% and 95%. This module is idea for use with the Model 4400 and 2400-8SA in R&D and in low volume production applications, where precise control of alloying of film properties is desired.

Features

  • Efficient 8″ round cathodes
  • High throughput operation
  • High Uniformity
  • DC, RF Etch and Bias operation
  • Ultra Clean vacuum system
  • Load lock operation
  • UHV design
  • Flexible for development or production use
  • Substrates up to 6″ diameter
  • Various pumping and power options
  • RF/RF co-sputtering option
  • Optional gas controllers

A Wide Range of Process

The following processes have been demonstrated in the Model 4400

Al+W Cr/SiO2 SiC Ti+Au
Al+Ti/W+Ag InSnO SiO2 Ti+Au+Ni
Al2O3 Mo SiO2+O2 Ti/W
Ag MoSi2 Si+N2(Si3N4) Ti/W+Au
Au Mo2Si5 Si+N2+B4C Ti/W+Au+Ta
C Mo5Si3 Ta Ti/W+Al/Si
Cr Ni TaC Ti/W+Ni/Cr+Au
Cr/Co Ni/Cr Ta+Au Ti/W+Pt
Cr/Au Ni+Ni/Cr TaSi2 W
Cr+Cu Ni/Fe Ta+SiO2 W+Al2O3
Cr/Si Ni/Fe+Cu+SiO2 TiO2 Zn
Cr/SiO Pt TiO2+Cr ZnO2
Zr

Aluminum Alloy Sputtering

The Perkin Elmer Delta cathode systems(Model 4410, 4450, 4480) are ideally suited to aluminum alloy deposition for gate contact and interconnect metalization.

  • Utilization and Rate

A Delta cathode system achieves an instantaneous deposition rate for aluminum alloys of 12,000 angstroms/minute. The substrate pallet can be in excess of 200 angstroms/kw minute with sputtered material utilization approaching.

  • Uniformity and throughput

Delta cathode systems maximize uniformity of deposition, exhibiting a +/-7% uniformity over a 6″ annular width. Optional high performance Delta cathodes yield a uniformity of +/-5% over a 73/4 inch band, allowing processing of up to 22 100mm wafers per cycle. Standard Delta cathodes process 50-60 100mm wafers per hour while optional high performance Delta cathodes yield throughput in excess of 80 100mm wafers per hour.

A particular advantage of a circular batch sputtering system is its adaptability to different substrate sizes. The Model 4410 and other delta cathode systems can easily handle substrate size up to 8 inches in diameter. Standard wafer size of 3 inch, 100mm, 125mm and 150mm can easily be accommodated.

TYPICAL CAPACITY-UNIFORMITY DATA
Wafer Size Loading Capacity Deposition Uniformity
Std Delta High Perf. Delta
3inch 30 +/-7% +/-5%
100mm 22 N/A +/-5%
14 +/-7% +/-4%
13 +/-5% +/-4%
125mm 10 +/-7% +/-5%
9 +/-4% +/-4%
150mm 8 +/-12% +/-5%
7 +/-7% +/-4%
8inch 5 +/-14% +/-7%

The Delta Cathode Systems-4410/4450 And 4480

  • Resistivity

Perkin Elmer sputtering systems ensure low film resistivity by minimizing partial pressure of oxygen and nitrogen below 1X10-7 Torr. With total system background pressure of 5X10-7 Torr and an instantaneous deposition rate in excess of 8500 angstroms/minute, near-bulk resistivity for aluminum alloy films can be achieved.

  • Film Hardness

By keeping oxygen content below, film hardness for typical 1 micron thick aluminum silicon films can be kept below 100 kg/mm2 after annealing at 500oC, minimizing bonding failures.

  • Specularity

High quality aluminum alloy films of 70-90% relative reflectance are routinely produced in high rate DC Delta magnetron systems, yielding wafers easily accommodated in today’s projection mask aligners.

Optional load lock pumping and wafer degassing further minimize water vapor and hydrogen, the principal contaminants that contribute to hillock growth and poor specularity. As metallization films become thicker and specularity degrades, further reduction of unwanted gases can be achieved through the use of supplemental hydrogen getter pumping in the Model 4410 and other Delta cathode systems.

  • Step Coverage

The high rate sputtering made possible with Perkin Elmer Delta DC magnetron cathodes produces sufficient heat to maintain film temperature in the ideal range. Heating the substrate in this manner and re-sputtering the deposited material through RF bias improves coverage of vertical surfaces in VLSI structures. It also minimizes cracks and cusping.

  • Optional High Performance Delta Cathodes

Provide more uniform deposition over a wider annular region of the pallet. A maximum of twenty two 100mm wafers can be loaded yielding 50% more throughput for a typical metallization process. The HIGH THROUGHPUT option consists of a modified shaping aperture, a high performance Delta cathode and a pallet nested for twenty two 100mm wafers. The region of high uniformity is extended across the total 8″ annular width of the pallet. A uniformity of +/-7% is achieved across a  73/4 inch band suitable for mounting two concentric rows of 100mm wafers. This wide brand of uniformity means that 51/4“, 8″, or 14” recording discs can be accommodated in the system.

  • The Delta Cathode Dual Deposit Sputter Module

The Delta Cathode Dual Deposition Sputter Module, operable in either a dual DC mode or DC and RF mode, is designed for higher throughput and larger scale production. Separate power suppliers allow independent application of either DC or RF energy to two delta cathodes simultaneously. The dual deposit sputter module for Models 4410, 4450 and 4480 is the choice for co-sputtering of refractory metal silicides  for VLSI circuits. The dual deposit sputter modules and the co-sputtering technique allow the deposition of contamination-free films.

Features:

  • High rate Delta DC magnetron
  • High throughput operation
  • Fully process characterized for aluminum alloys
  • High uniformity
  • DC, RF, Etch, and Bias operation
  • Ultra clean vacuum system
  • Load lock operation
  • UHV design
  • Flexible for development or production use
  • Any size substrates up to 8″ diameter
  • Various pumping and power options
  • Optional system and process controllers
  • Cassette to cassette operation(Model 4480)
  • Co-sputter option for silicides
  • Operation gas controller
PERFORMANCE FOR TYPICAL METALLIZATION PROCESS-100mm WAFERS
Standard Delta System High Throughput Delta Systems
Pallet capacity 14 22
Uniformity +/-7%(63/4“) band +/-5%(73/4” band)
+/-7%(8″ band)
Typical Target Life 3220 wafers 4070 wafers
Typical Deposition Rate 200 Angstroms/kw-min 170 Angstroms/kw-min
Typical Deposition time 5 minutes 5.9 minutes
*Runs per hour 4.0 3.8
Throughput 56 wafers/hour 83 wafers/hour
* Assumes 10 minute pumping, wafer exchange and venting cycle, some processes require pre-heating, extending the loading cycle by as much as 5 minutes.
Delta Cathode Systems Performance Specifications(Typical)
Material Al/1%Si Al/1%Si/2%Cu Al/4%Cu
DC Power 10 kw 10 kw 10 kw
RF Bias -25V -25V -25V
Base Pressure 5X10-7 Torr 5X10-7 Torr 5X10-7 Torr
Pumpdown Time 3.5 min. 3.5 min. 3.5 min
Argon Pressure 8X10-3 Torr 8X10-3 Torr 8X10-3 Torr
Table Rotation 2-5 rpm 2-5 rpm 2-5 rpm
Deposition Rate 2000 Å /min 2000 Å /min 2000 Å /min
Film Temp(max) 375oC 375oC 375oC
Film Thickness 1.0 microns 1.0 microns 1.0 microns
Step Hight 1.0 microns 1.0 microns 1.0 microns
Step Slop/Coverage 70o/70% 70o/70% 70o/70%
80o/60% 80o/60% 80o/60%
90o/50% 90o/50% 90o/50%
Specularity 70-75% 80-85% 90-95%
Resistivity 2.85-2.90μΩ-cm 2.95-3.00μΩ-cm 2.95-3.00μΩ-cm
Grain Size 1-2μm 0.3-0.5μm 0.3-0.5μ
Film Hardness

(Annealed)85kg/mm2100kg/mm2120kg/mm2CV Shift0.25V0.15V0.15V*Uniformity+/-7%+/-7%+/-7%* Typical results with Standard Delta Cathodes. Higher uniformity and throughput can be achieved with high performance Delta Cathodes and high throughput option. Throughput is process dependent and may vary depending on etch and pre-heat cycles.

Series 2400

Highest Quality Sputtering-

Superior Performance-

Wide Selection of options-

In a laboratory or low-volume production environment, where the high throughput levels of the 4400 Series are not required, the 2400 Series is the ideal alternative for high quality sputtering in a wide variety of applications.

Model 2400-8SA

The Perkin-Elmer Model 2400-8SA features a large 211/2” rotating, water cooled annular table with a capacity of sixty-four 2″, thirty 3″, or thirteen 4″ wafers.

Used in conjunction with a cathode shaping aperture, the rotating table permits high uniformity. A 4″ wafer vertical range of the table facilitates coating bulk substrates. As an added feature, up to three 8″ round cathodes may be specified allowing sequential deposition from several targets or alternately, static deposition or heating from any target position.

Power Splitting is an optional feature of the 2400-8SA system. With this feature, RF power can be applied to two cathodes simultaneously in any desired ratio from 5 to 95%. Combined with the continuous substrate rotation feature, an infinite number of alloy compositions can be developed simply by varying the power division between target.

Model 2400-8L

The Model 2400-8L load lock system ensures a constant inert gas or vacuum environment allowing rapid pumpdown to base pressure and elimination of target pre-cleaning. High partial pressure of water vapor is no longer a problem, even in areas of high humidity. Additional water vapor pumping is possible with an optional Meissner Trap. By eliminating the need to break vacuum in the process chamber, the 2400-8L load lock reduces both pumpdown time and contamination of targets and internal chamber surfaces. Load lock pumping is provided by a mechanical pump which is shared with the process chamber vacuum system. Load lock pumpdown and pallet transfer are automatically controlled. Sequence and valve position are displayed on front control panels.

A water-cooled 8″ diameter substrate table rotates the pallet 360o and automatically aligns it precisely under any one of the three targets or the etch position. Substrates can be loaded, processed, and unloaded in minutes improving run to run yields. A full pallet of wafers can be transferred from air to a properly maintained process chamber and pumped down to a base pressure of 5X10-7 Torr in less than five minutes.

Series 2400-Capabilities, Features, Options

  • High Uniformity

Careful cathode and chamber designs mean high uniformity,. Integral copper channels in the anode tables insure even distribution of cooling water and RF power.

  • High Throughput

The 2400-8SA features a 211/2” table which enables processing of large wafer batches. The 2400-8L utilizes a smaller pallet but provides a unique load lock system to dramatically reduce pump-down time. Either approach maximizes efficiency.

  • Maximum Process Control

Both 2400 Series systems offer a wide choice of target materials, machine operating models, and gas controls with capability to perform a variety of thin film tasks.

  • RF Bias

The Perkin-Elmer 2400 Series RF Bias capability enables high quality films with a variety of materials. The RF bias provides improved step coverage, controllable intrinsic stress for metal or dielectric films, improved alloying materials and stoichiometry, resistivity that approaches bulk values, precisely controlled film densities and impurities and reduced argon content.

  • Uniform Deposition

The 2400-8SA and 2400-8L use uniformity shaping apertures to compensate for the geometry of the cathode sputtering pattern. The rotating substrate table further improves uniformity in the 2400-8SA. The 2400-8L utilizes a double-disk dark space shield to eliminate edge sputtering from the cathode plate and provide exceptional plasma confinement.

  • Operation Mode Selection

In all 2400 systems, the mode selector switch provides a choice of modes:sputter deposit, bias sputter and sputter etch.

  • Standard RF Features

Servo-Match automatic turning maintains proper turning despite variations in target emission, pressure or RF power. A power stabilizer holds RF power constant.

 FEATURES

The 2400-8SA Rotating Table Multi-Target System

  • Sequential deposition from DC magnetron, RF magnetron and conventional RF cathodes
  • Simultaneously sputtering from 2 targets
  • High deposition rates for metals and dielectrics
  • Low substrate temperature in both RF and DC magnetron deposition modes
  • Single pass or multi-pass capability
  • Servo-Match automatic turning
  • High loading capacity
  • Three target capability

The 2400-8L Load Lock Multi-Target System

  • Load lock for reduced pump-down time
  • Remotely adjustable anode/cathode spacing
  • No cross-contamination
  • Pallet heated on substrate table with rapid cool-down
  • Servo-Match automatic turning
  • Fast turnaround through automated operation.
  • Three target capability

Series 4400/2400-Options

Options 4400 4410 4450 4480 2400-8L 2400-8SA
Process Chamber Heater, 350oC X X X X X X
RF/RF Power Split, Co-Sputter X X
Dual DC;RF/DC. Co-Sputter X X X
Process Chamber Turbo Pump X X X X X X
Process Chamber Diffusion Pump X X
CTI-8 Cryopump X X X X X X
Hydrogen Getter Pump X X X X
Load Lock Heat, 200oC X X Std Std
Load Lock Turbo Pump X X Std Std
5kw DC Power Supply X X X X X X
10kw DC Power Supply X X X
1kw RF Generator X X X X X X
2kw RF Generator X        X X X X X
3kw RF Generator X X X
RF Power Stabilizer X X X X X X
RF Power/Voltage Stabilizer X X X X X X
Gas Controller X X X X X X
Digital Clock Timers X X X X X X
Process Sequence X X X
High Throughput Option X X *
DC Sputter/RF Bias Option X X X X
* Useable in Manual Load Mode only

Model 4410

DeltaTM Cathode Production Sputtering System

Perkin-Elmer                        Ultek Division

MODEL 4410 SPECIFICATIONS

Typical Process Results

High quality metal films can be routinely achieved:

Material:Al-1%Si

Power:9kw

Table rotation:10 rpm

Argon pressure:8 mTorr

Film thickness:1.04 microns

Deposition time:5.8 minutes

Step height: 1.10 microns

Step slope: 80o

Step coverage: 62% horizontal-to-vertical

Specularity: 65-75%

Resistivity: 2.85μΩ-cm

Grain size:2 microns

Process Chamber

  • 28″ diameter X 12″ high stainless steel cylinder with 6″ CF flange viewport and load lock port
  • 28″ diameter stainless steel top plate with 3 delta cathode ports
  • 28″ diameter stainless steel base plate
  • 11/2” air-operated roughing isolation valve
  • Solenoid-operated gas inlet valve
  • 3/8” solenoid-operated vent valve
  • 11/2” blanked-off leak check port
  • Removable deposition shields
  • 23″ diameter, 3-position water-cooled annular substrate table with adjustable 1-10 rpm SCR motorized table drive
  • Full circle shutter with vane shutter
  • Chain drive pallet carrier transport
  • Automatic plasma igniter
  • Heavy duty electric hoist

Load Lock

  • 30″ x 28″ x 8″ stainless steel load lock chamber with aluminum cover
  • 2″ air-operated roughing isolation valve
  • 3/8” solenoid-operated vent valve
  • 23″ diameter molybdenum annular substrate pallet
  • Pallet carrier and chain drive transport

Vacuum System

Roughing

  • 7 cfm mechanical pump for process chamber and load lock roughing
  • 2″ diameter roughing lines with electropneumatic valve
  • Surface-area Versa-trapTM in roughing line

High vacuum pumping

  • 2 stage cryopump with 1000 l/s pumping speed for air, including chevron, water-cooled compressor and lines, automatic regeneration controller and plumbing kit.
  • 71/2” O.D. (6″ ASA) aluminum air-operated gate valve
  • Air-operated venetian blind throttling valve

Residual gas pumping

  • Full flood Meissner trap with 30,000 l/s pumping speed for water vapor
  • Insylated LN2 lines
  • LN2 sensor, solenoid and relief valve

Control

  • Vacuum gauging package including basic digital vacuum gauge control (DGC II), ionization tube and two thermister tubes
  • Automatic pump-down controller
  • Automatic lock controller

Options

  • Diffusion-pump system including 1500 l/s oil diffusion pump, LN2 chevron baffle, water-cooled baffle and water-flow switch.
  • Turbomolecular-pumped system including 450 l/s turbo pump, foreline manifold with 11/2” air-operated isolation valve, and water-flow switch(less throttling valve)
  • Polycold-compatible quick-purge Meissner trap.

Sputtering Control Module

  • 3 kw water-cooled RF matching network
  • RF power on/off switch
  • RF power level control
  • 4 position rotary sputter mode selector
  • 3 position rotary target selector
  • 2 position shutter position switch
  • Manual load and tune controls
  • 15-turn vernier 0-10% bias control
  • Forward and reflected RF power meters
  • Substrate bias meter
  • Target bias meter
  • Target-to-table spacing meter
  • Servo-MatchTM automatic turning (mounted in lower console)

Cathode Options

  • Delta DC magnetron cathode assembly with water-cooled backing plate and anode
  • Delta-to-8-inch round cathode adaptor
  • 8″ diameter RF magnetron cathode assembly
  • 8″ diameter RF diode assembly
  • 8″ diameter DC magnetron cathode assembly
  • Delta blank-off plate
  • MagnabondTM 8-inch round target kit for DC cathodes
  • Bolt-on Delta target kit

Power Options

  • 2 kw RF Generator
  • 3 kw RF Generator
  • 5 kw programmable DC magnetron power supply including digital clock timer
  • 10 kw programmable DC magnetron power supply including digital clock timer

Utilities

  • Rear-mounted electrical, water, gas and LN2 inlet panel
  • Power distribution box
  • Water-flow switch panel and manifold

System Options

  • Precision 3 rpm to 5 rpm servo-driven table drive
  • Water-cooled process chamber
  • Water-cooled top plate
  • Dura gas inlet system
  • Wide range digital vacuum gauge control
  • Continuous viewing vacuum port

Accessories

  • Load lock pumping and heating system including 100 l/s turbomolecular pump, 17.7 cfm mechanical pump, 200oC heater and controller
  • Microprocessor for machine and process control
  • Programmable RF power stabilizer
  • DC sputter with RF bias
  • Process chamber 350oC heater (mounted in cathode position)
  • Digital clock timers
  • Annular pallet nested for 64 2-inch,30 3-inch or 13 4-inch wafers
  • Polycold refrigeration system for Meissner trap
  • Delta target copper backing plate
  • Pressure or flow controllers

Microprocessor Operation Option

Ultek’s microprocessor controller option permits automated control of machine functions and process parameters including load lock operation, pump-down venting and all process sequences. Up to five 16-step process sequences can be stored in the system’s memory to facilitate process change.

An interactive CRT facilitates programming. Unconditional looping is available for repetitive processes. Other capabilities include: program listing, hard copy records and interface with other computer systems.

THE DELTA CATHODE SYSTEM:MODEL 4410

Perkin-Elmer’s Model 4410 delta cathode production sputtering system is designed for high yield in production environments demanding maximum throughput for metal deposition. It also provide a high level of flexibility in process control for other materials.

The 4410 uses a delta-shaped cathode that eliminate the need for a large-area uniformity-shaping aperture. This dramatically increases throughput while maintaining high wafer-to-wafer uniformity.

Contrasted with circular cathodes, target utilization is substantially higher. Up to 35% of the target can be sputtered before target change, and some 60% of the sputtered material actually reaches the substrate pallet. This results in a lower cost per wafer and less frequent target changes. Up to three delta or 8-inch round targets may be installed for sequential deposition of three different materials without breaking vacuum.

The 4410 employs a fast cycle load lock, two-stage cryopump and full flood Meissner trap to maintain the process chamber at high vacuum and in a clean condition at all times. The process chamber is fabricated of stainless steel for contamination-free performance. A base pressure better than 5 X 10-7 Torr is achieved within 3.5 minutes from loading substrates into the load lock. Typical cycle time, with optional load lock heating and pumping, is 12 to 15 minutes for the deposition of 1 micron of aluminum.

System Highlights

  • High rate delta DC magnetron sputtering: Aluminum and aluminum alloys can be sputter deposited at rates in excess of 1800 Å /min, with loads of thirty 3-inch or thirteen 4-inch wafers.
  • High throughput operation: Automated load lock and controller sequences provide for efficient pump-down and pallet transfer to process chamber, maximizing throughput.
  • High uniformity: +/-7% deposition uniformity guaranteed with water-cooled rotating annular substrate table;+/-5% achievable.
  • The right sputter mode for each application: Sputter deposit, 0-10% RF bias sputter. DC bias sputter, sputter etch to 2 kw, RF magnetron, RF diode, DC delta magnetron.
  • Ultra-clean vacuum: Cryopump and Meissner-trapped process chamber ensures contamination-free conditions especially important for critical processes such as the deposition of aluminum and platinum.
  • Designed for operator safety: Two-button operation initiates pump-down and load sequence. Safety interlocks on DC and RF suppliers.
  • Easy maintenance: Removable deposition shields permits easy system cleaning. Automatic cryopump regeneration minimized downtime and inconvenience.
  • Key function clearly displayed: Valve position and system status are continuously displayed by quick-reading LEDs on front panels.
  • Easy wafer loading: Tweezer grooves facilitate wafer loading. Nested pallets are optional.
  • A fail-safe system: Water flow switches on cathodes, matching network and vacuum system automatically shut the system down in case of cooling system failure.

The Sputtering Process

Sputtering is a momentum transfer process in which atoms from a cathode/target are driven off (or sputtering) by bombarding ions. In this process the momentum of the bombarding particles is more important than the energy. For example , a hydrogen or helium ion accelerated to 3,000 eV will cause very little sputtering compared to an ion of argon (which is chemically inert) with the same 3,000 eV energy, simply because the much higher hydrogen or helium ion has much less momentum.

Sputtered atoms travel until they strike a substrate , where they are deposited to form the desired thin film. As individual atoms, they can be chemically active and form compounds with the ions and atoms of the bombarding gas. For this reason, inert argon typically is used as the bombarding gas. In some applications, however, a reactive gas is intentionally added to the argon to alter the chemical composition of the deposited film (e.g., nitrogen gas in combination with tantalum sputtering to form tantalum nitride, TaN).

When argon atoms strike the target, their electrical charge is neutralized and they return to the process as atoms. If the target is an insulator, the neutralization process results in a positive charge on the target surface. The charge may grow so large that the bombarding ions are repelled and the sputtering process stopped. To allow the process to continue, polarity of the target must be reversed, attracting enough electrons from the discharge to eliminate the surface charge. This periodic reversal of polarity is accomplished automatically by applying RF voltage to the target assembly ( hence the term “RF” sputtering).

Of interest here is the diode rectifier-like behavior of the target and discharge systems. This results from the vast difference in mobility of ions and electrons. Electrons , being so much fast, are attracted in greater numbers to the target during the positive half-period of the RF voltage than are ions during the negative half-period. Thus, the target develops a negative DC bias.

4400-Series Production Sputtering Systems perform a number of sputtering process, each of which is ideal for a different application.

RF Diode Sputter Deposition

When the vacuum set point is reached, sputtering gas (typically argon) is introduced in the process chamber at a pre-selected rate (typically 40 sccm). A plasma, or self-sustaining glow charge , initiated by an automatic plasma igniter, appears when RF power is applied between the target and electrical ground, ionizing the argon gas.

A negative (-) potential applied to the target, as a result of the applied RF power, attracts the ionized argon at a momentum determined by a) the magnitude of applied potential and b) the mass of the ion. The momentum of the incoming ion is transferred to the target material, causing surface atoms or molecules of target material to be ejected (sputtered). These sputtered atoms travel across the gap separating the target (cathode) and substrate table (anode), and are deposited on the substrate (wafers) which are arranged on the substrate pallet.

RF Magnetron Sputter Deposition

RF magnetron and RF diode sputtering are very similar, except that during RF magnetron sputtering a magnetic field deflects the secondary electrons (which are produced during normal sputtering operation) away from the substrates. The sputtering process, which is cooler than RF diode sputtering, permits materials to be sputter deposited on substrate at lower temperatures and greatly reduces the chance of radiation damage to delicate substrates.

Because the impedence  of a magnetron is lower, higher power densities are possible at lower potentials, effecting high sputter rates.

DC Magnetron Sputter Deposition

DC magnetron targets enhance the plasma density and increase the sputtering rate, by trapping electrons in an electromagnetic “envelope”. This “envelope” is formed when lines of the magnetic field enter and exit the target face and when the loci of maximum transverse magnetic fields form a closed figure. Because the currents involved are very large, a separate, positively-biased anode (a dark space shield) is used to collect the electrons. A similar dark space shield is used in RF diode and RF magnetron deposition, This dark space shield prevents the sides of the target and target backing plate from sputtering.

RF Sputtering-Etching

Essentially the reverse process of RF diode sputter deposition, in which the substrate table becomes the cathode (negative pole) and the target assembly becomes the anode (positive pole). Under these circumstances, surface material from the substrates is ejected. Surface impurities are ejected along with substrates material, making this process useful for pre-cleaning substrate prior to sputter deposition. In order to prevent ejected material from contaminating the target, s shutter is positioned between target and substrate.

Bias Sputter Deposition

Bias sputtering combines the DC or RF sputtering and the RF etching operations. While DC or RF power is applied to the target, a small amount of RF is also applied to the substrate table. As a result, the substrate and target are both bombarded by ions ( the substrate to a lesser extent than the target ). In many applications this process yields superior quality films than can be attained using DC or RF sputtering with grounded substrates. Bias sputtering influences the crystal structure, and tends to re-sputter trapped argon from the growing film during deposition and rearrange individual atoms of the sputtered material; this improves stoichiometry and step coverage. Bias sputtering can be used to adjust film resistivity and film stress to desired levels.

Reactive Sputtering

Some metals, such as nitrides and oxides, are best deposited by this method: the target is the parent metal and a small amount of nitrogen or oxygen is introduced into the process chamber along with the argon sputtering gas. Because ionized gases are typically highly reactive, a film deposited in a mixture of argon and a reactive gas will often form a compound with the reactive gas (e.g., a nitride or an oxide).

Co-Deposition

Sometimes called co-sputtering or dual deposition, co-deposition is identical in principle and practice to other types of sputter deposition, except that two targets (typically of different materials) are simultaneously activated. Substrates passing sequentially and repeatedly beneath the targets are coated with alternating, very thin films of two materials. Under certain circumstances, the resultant film can be equivalent to or better than one formed using a composite target. During co-deposition, both targets may be RF, both DC, or one RF and one DC.

Perkin-Elmer 4400 Sputtering Deposition Equipment Dimension

Perkin-Elmer 4400 Sputtering Deposition Equipment Dimension

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1 000-0000// AMAT E5500 HOIST ENDURA 5500 SPUTTER TNAN [ASIS]
2 0020-09031, AMAT, INSULATING WASHER – ONLY. Part from P5000 SPUTTER & TR
3 0020-09911 / AMP-266-009, CARRIER, SPUTTER / APPLIED MATERIALS AMAT
4 0020-09911, AMAT, Applied Materials CARRIER, SPUTTER, From P5000 Sputter kit
5 0020-09912 PIN LIFTING SPUTTER, lot of 7
6 0020-09933 / GAS DISTR. PLATE SPUTTER / APPLIED MATERIALS AMAT
7 0020-10527, AMAT, Applied Materials, SPUTTER PIPE , Teflon
8 0021-11382 / MAGNET ASSEMBLY, ENDURA PVD SPUTTERING / APPLIED MATERIALS AMAT
9 00-680909-00 / RAM BELLOWS ASSY,PRESSURE PLATE, ,SPUTTER,00-680909-00 / NOVELLUS
10 0200-09086, AMAT, Applied Materials, QUARTZ RING 200MM SPUTTER ETCH
11 0200-09090; RING QUARTZ 200MM SPUTTER ETCH BGR, Applied Materials (AMAT)
12 0200-09608, AMAT, Applied Materials,SHLD QUARTZ,200MM,SPUTTER ETCH
13 04-716797 /MULTI RANGE DC SPUTTERING POWER SUPPLY M2000,M2I / VARIAN VPW2870P5-S
14 1,000 pounds of pure silicon sputtering targets polysilicon poly-silicon
15 1021-12-151 / WEST COAST QUARTZ RING, 8″ SPUTTER CERAMIC / WEST COAST QUARTZ
16 10538 ANATECH SPUTTERING SYSTEM HUMMER 10.2
17 115-0101// HITACHI 03E-0601, E-120 ION SPUTTER
18 116-0503// AMAT APPLIED 0200-09087 QTZ RING 150MM SPUTTER
19 119-0301// HONEYWELL E5500 11″ DB ENDURA 6″ SPUTTERING TARGET
20 21″x 6″ Cadmium Tin Alloy Rotary Sputtering Target 99.9% (Cd)66.5(Sn)33.5 Wt%
21 304-200225 Rev A, Sputtering
22 324-0202// AMAT APPLIED 0020-39554 HARD STOP, WAFER LIFT, SPUTTER
23 342-0101// AMAT APPLIED 0020-09912 LIFTING PIN, SPUTTER
24 342-0101// AMAT APPLIED 0020-09912 LIFTING PIN, SPUTTER
25 35mm Slide-#467-1961-Sputterer Spring
26 3648 Sputtering Materials Inc. 03069440002-A Boundment Backing Plate RND: 4″
27 3744281 – Leybold Heraeus – CONTACT ELEMENT – FOR SPUTTERING 011/110
28 4″ Glass For Viewport UHV Sputtering
29 6 inch diameter round sputter gun
30 771 gram 27Oz 99.95% Niobium Columbium metal sputtering target element 41 sample
31 786 gram 28Oz 99.95% Niobium Columbium metal sputtering target element 41 sample
32 8 inch Reflective “Splatter&Adhesive” sputtering Reactive Shooting paper
33 9.5″ Spit & Sputter Dying Perch Muskie Topwater Lure Handcrafted 6.5 Oz
34 99.99% Aluminum 8.7/8″x 3.3/8″x 0.310″ Sputter Target Approx.103 Grams
35 99.995% Titanium Sputtering Target Plate Diameter 57mm 2.24” Thick 5mm
36 99.995% Titanium Ti Sputtering Target Disc Plate Diameter 150mm Thick 5mm
37 99.995% Titanium Ti Sputtering Target Disc Plate Diameter 85mm Thick 5mm
38 99.995% Titanium Ti Sputtering Target Plate Diameter 2” Thick 10mm
39 99.995% Titanium Ti Sputtering Target Plate Diameter 70mm Thick 5mm
40 99.995% Titanium Ti Sputtering Target Plate Diameter 75mm Thick 3mm
41 A&N Chain Clamp Sanitary Pipe Ultra Low Vacuum Sputtering Deposition Chamber
42 Advanced Energy 10kW Magnetron Drive Power Supply Sputtering MDX 2226-000-F
43 ADVANCED ENERGY 3152283-000A CONTROLS BOARD FOR MDX TYPE DC SPUTTER POWER SUPPLY
44 Advanced Energy 3157600-003 PEII Reactive Sputtering PSU 1100V 10kW 40KHz 208VAC
45 Advanced Energy 3157600-004 PEII Reactive Sputtering PSU 10kW 208VAC
46 Advanced Energy 3157600-004 PEII Reactive Sputtering PSU 1100V 10kW 40KHz 208VAC
47 Advanced Energy AE Ascent 40KW DC Sputtering Power Supply
48 ADVANCED ENERGY AE MAGNETRON CATHODE SPUTTERING T HEAD 6″ WAFER 3151701-010
49 advanced energy AE MDX 2.5 2500w dc sputtering power supply single phase amat
50 Advanced Energy MDX 1K Magnetron Power Supply 1Kw, 115VAC, Single-Phase, 16A
51 Advanced Energy MDX 1K Magnetron Sputter Power Supply 1Kw, 115VAC, 1-Ph, 16A
52 Advanced Energy MDX 2.5K 3152224-031A DC Sputter Power Supply 200-208V, 220-240V
53 Advanced Energy MDX 5K Magnetron Drive 5 kW Sputter Power Supply 2011-000, USA
54 Advanced Energy MDX 5K Magnetron Drive 5kW Sputter Power Supply 2011-000-E USA
55 Advanced Energy MDX II 3152256-005F DC Sputter Power Supply 18KW 400V3-phase 32A
56 Advanced Energy MDX II 3152256-209C DC Sputter Power Supply
57 Advanced Energy MDX-1K, 2105 Dc Sputter Power Supply
58 Advanced Energy MDX-2.5K DC Sputtering Power Supply 2224-006-B Output 500-1800V
59 Advanced Energy MDX-500 DC Sputtering Power Supply – 6 month wrty.
60 Advanced Energy Pinnacle 3152352-123B Pulsed DC Sputter Power Supply, 8 KW
61 Advanced Strategies In Thin Film Engineering By Magnetron Sputtering
62 Advanced Strategies in Thin Film Engineering by Magnetron Sputtering by Alberto
63 ADVANCED STRATEGIES IN THIN FILM ENGINEERING BY MAGNETRON SPUTTERING GU MDPI AG
64 AE ADVANCED ENERGY MDX 1.5K MAGNETRON SPUTTERING DC POWER SUPPLY. 500V 3A
65 AE Advanced Energy MDX 1.5K Sputtering DC Power Supply
66 AE Pulsed Plasma PEP-2500 bipolar dc rf sputter power
67 AJA INTERNATIONAL ST20 RF/DC sputtering source for 2″ x 0.25″ target
68 AJA INTERNATIONAL ST30-MM , RF/DC HV Sputter Source 3 Inch
69 AJA Intl Sputtering Target – Iron – 2″ Dia – 1/8″ Thick – 99.95% Pure
70 Al-Sc 87.5/12.5 wt% Alloy Sputtering Target
71 Aluminum Al Sputtering Targets – 2.00″ Diameter, 0.250″ Thick – Kurt J. Lesker
72 Aluminum MRC Chi Inset Sputter Target: Al 99.9+ With Materials certification
73 Aluminum nitride, AlN – Sputtering Target
74 Aluminum SEM Sputtering target: Al 99.999% pure, 54mm diameter x 1mm thick
75 Aluminum SEM Sputtering target: Al 99.999% pure, 57mm diameter x 1mm thick
76 Aluminum sputter target, Al 99.999% pure 2″ diameter x 0.125″ thick
77 Aluminum sputter target, Al 99.999% pure 2″ diameter x 0.25″ thick
78 Aluminum sputter target, Al 99.999% pure 50mm diameter x 3mm thick
79 Aluminum Sputtering target: Al 99.999% pure, 63mm diameter x 1mm thick
80 Aluminum Target for Nobler NT 1500 sputter coater
81 Aluminum, Al – Sputtering Target
82 Aluminum/Indium sputter target Al/In 1:1 at%, 99.99% pure 3″ dia x 1/4″ thk
83 Aluminum/Manganese sputter target Al/Mn 99.8/0.2 wt% 3″ diam x 0.25″ thk
84 Aluminum/Nickel sputter target 50/50 Al/Ni at% 99.99% rod 4.2″ long x 0.5″ diam
85 Aluminum/Silicon MRC Chi Sputter target: Al/Si 99/1 wt%
86 Aluminum-doped Zinc Oxide Sputtering Target AZO
87 AMAT 0010-01994 Rev.001, Magnet Assembly, PVD, Endura, Sputter Chamber
88 AMAT 0010-09425, Grounding Strap, Assy, Sputter Etch
89 AMAT 0010-20818 ENDORA 5500, MAGNET, SPUTTER, PVD source
90 AMAT 0020-00663, Insulator, Source, 11 inch, Ceramic, PVD, Sputter
91 AMAT 0020-07701 Shield Upper Ti TiN Al Flame Spray Endura sputter Chamber
92 AMAT 0020-09911 MXP Sputter, Etch Carrier, Wafer lift with 4 Pin
93 AMAT 0020-09911 SPUTTER CARRIER with 0020-09912
94 AMAT 0020-10050 Pedestal, Flat Sputter
95 AMAT 0020-10050 Pedestal, Flat Sputter
96 AMAT 0020-10051 Ring, Top Sputter
97 AMAT 0020-10051, Ring, Top Sputter
98 AMAT 0020-10527 sputtering pipe, etch chamber, teflon insulator, MXP
99 AMAT 0020-21467 Adapter Source, PVD Chamber, Sputter, Endura Tool
100 AMAT 0020-21707 8 Inch wafer hoop, Lifter Endure, PVD sputter
101 AMAT 0020-21707 8 Inch wafer hoop, Lifter Endure, PVD sputter, CDSL-D-280
102 AMAT 0020-21707 8 Inch wafer hoop, Lifter Endure, PVD sputter, CDSL-D-299
103 AMAT 0020-24640, 6JMF, Tin clampring, PVD Sputter chamber
104 AMAT 0020-29719 Pre clean Endura sputter Pedestal quartz chuck
105 AMAT 0020-29719-PA, Endura, PVD, Chuck, Pedestal, Sputter Chamber
106 AMAT 0020-29719-PA, Endura, PVD, Chuck, Pedestal, Sputter Chamber
107 AMAT 0020-62669 SHIELD, APERATURE, B/S SPUTTER
108 AMAT 0021-11075-001, Endura, PVD, Chuck, Pedestal, Sputter Chamber
109 AMAT 0021-11382 Magnet Assembly, Endura PVD sputtering
110 AMAT 0021-76516 Chamber Liner, PVD Sputter, Endura Tool
111 AMAT 0040-01761 Endura Pre-clean Chamber Body, Sputter, PVD
112 AMAT 0040-20561 Belljar, Preclean II, Endura, Sputtering Plate
113 AMAT 0040-20561 Belljar, Preclean II, Endura, Sputtering Plate
114 AMAT 0040-20561 Belljar, Preclean II, Endura, Sputtering Plate
115 AMAT 0200-09084 Shield, 125mm, Sputter Etch
116 AMAT 0200-09088-B Quartz Ring 125MM Sputter Etch
117 AMAT 0200-09091 Graphite Ring For P5000 Sputter Etch (FCVD02C)
118 AMAT 0200-09608, Shield Quartz 200mm, Sputter
119 AMAT 0200-09608-C, Shield Quartz 200mm, Sputter
120 AMAT 0200-20059 PVD Sputter Liner Clamp, 6″, Aluminum, SMF, STR
121 AMAT 0200-20061 Insulator, Quartz, 6″, PVD Sputter chamber PCII
122 AMAT 233-2889-25 AMAT PVD endura clamp ring Sputter chamber
123 AMAT 6″ ENDURA HEATER ASSEMBLY, PVD SPUTTER CHAMBER
124 AMAT Applied Materials 0020-09933 Gas Distribution Sputter Plate
125 AMAT Applied Materials 0020-09933 Gas Distribution Sputter Plate
126 AMAT APPLIED MATERIALS 0100-20255 RF Sputtering
127 AMAT Applied Materials 0140-16349 Harness Assembly Sputter Chamber Right
128 AMAT Applied Materials 0140-16350 Harness Assembly Sputter Chamber Rear
129 AMAT Applied Materials 0140-16351 Harness Assembly Sputter Chamber Bottom
130 AMAT Applied Materials 0200-09088-B Quartz Ring 125MM Sputter Etch
131 AMAT Applied Materials 0200-09088-C Quartz Ring 125MM Sputter Etch
132 AMAT Applied Materials 0225-34794 Gas Distribution Sputter Plate
133 AMAT APPLIED MATERIALS QTZ RING, 200mm SPUTTER ETCH, AMAT P/N 0200-09086
134 AMAT Endura Sputter Chamber Source Magnet Holder, Lock
135 AMAT Magnet Assembly, PVD, Sputter, 329947
136 AMAT PVD Chamber Lift Assembly, Endura Sputter Chamber, SMC NCDQ2WB63-01-0193US
137 AMAT PVD Endura sputtering chamber clamp ring
138 Anatec Limited HUMMER VI Sputtering System
139 Anatech Gold Sputtering Coating Machine with Vacuum Pump  Hummer VII
140 Anatech Hummer 6.2 Sputtering System
141 ANATECH HUMMER VI-A SPUTTERING SYSTEM
142 Anatech HUMMER X Sputter System
143 Anatech HUMMER X Sputter System
144 ANATECH HUMMER X SPUTTER SYSTEM
145 Anelva 32 Point PCB Relay Board For 1015/1013 Sputtering System ILC 1013
146 ANELVA 9005-41429 SPUTTER TARGET, PVD, COML, BONDING D164 T4, 5N AI-PURE
147 ANELVA 9005-41429 SPUTTER TARGET, PVD, COML, BONDING D164 T4, 5N AI-PURE
148 Anelva Sputtering system ICL-1015 Semiconductor Processing Assembly
149 Angstrom Sciences 99.999% Copper 8.0″ x 0.25″ Sputtering Target
150 ANGSTROM SCIENCES NICKEL SPUTTERING TARGET (NI) 99.995% BONDED 8”X.250”
151 Angstrom Sciences Onyx Intevac Sputtering RM PVD Magnet Assembly
152 Angstrom Sciences PLux Control – Touchscreen – Magnetron Sputtering
153 Angstrom Sciences RF / DC PLANAR MAGNETRON SPUTTER GUN, 2″ TARGET
154 Angstrom Sciences Sputtering Cathode with Aluminum Target, 8″ x 3″
155 Anode layer ion source plasma sputtering thin film 2.75″ conflat SHV baseplate
156 Anode layer ion source plasma sputtering thin film deposition
157 Antimony, Sb – Sputtering Target
158 Antimony/Telluride sputter target – Sb2Te3 99.99% pure, 1.00″ diam x 4mm thk
159 Applied Materials (AMAT) 0020-03597 Spider Sputter etch
160 Applied Materials (AMAT) 0020-09911 CARRIER, SPUTTER
161 Applied Materials (AMAT) 0020-10527 Sputter pipe
162 Applied Materials (AMAT) 0020-10527 SPUTTER PIPE
163 Applied Materials (AMAT) 0020-10527 SPUTTER PIPE TEFLON
164 Applied Materials (AMAT) 0020-21707 8″ wafer hoop, Lifter Endure, PVD sputter
165 Applied Materials (AMAT) 0020-30178 SPUTTER ETCH CARRIER SEMICONDUCTOR PART
166 Applied Materials (AMAT) 0200-09062 WEST COAST QUARTZ RING COVER 150MM SPUTTER
167 Applied Materials (AMAT) 0200-09083 SHIELD 150MM SPUTTER ETCH
168 Applied Materials (AMAT) 0200-09088 WEST COAST QUARTZ RING 125MM SPUTTER ETCH
169 Applied Materials (AMAT) 0200-09089 RING QUARTZ 100MM SPUTTER12NC:790050202513
170 Applied Materials (AMAT) 0200-09090 RING GRAPHITE 200MM SPUTTER ETCH
171 Applied Materials (AMAT) 0200-09608 SHLD QUARTZ,200MM,SPUTTER ETCH
172 Applied Materials (AMAT) 0220-10629 KIT, SPUTTER ETCH LIFT ASSY MOD
173 Applied Materials (AMAT) 0225-34794 GAS DISTRIBUTION PLATE, SPUTTER
174 Applied Materials (AMAT) 0226-97903 CATHODE KIT TUNGSTEN ETCHBACK/ST SPUTTER
175 Applied Materials 0010-76306 Bearing, Assy. Sputter AMAT Etch
176 Applied Materials 0020-09911 Carrier,Sputter
177 APPLIED MATERIALS 0021-61445 300MM RING, DEPOSITION, CU SPUTTER, BCP (Cu) AMAT
178 Applied Materials AMAT 0200-09063 RING COVERING SPUTTER 4
179 Applied Materials AMAT Heater Loop Sputter CPL 102136614 2600W 400V
180 Applied Materials Heater Loop Sputter, 102136616, 2600W, 400V CPL
181 Applied Materials Model:0020-10527 Sputter Pipe for FCVD02C
182 APPLIED MATERIALS PEDESTAL THICK 200MM GRAPH/QUARTZ SPUTTER ETCH 0020-10518
183 APPLIED MATERIALS RING GRAPHITE 200MM SPUTTER ETCH, 91-00331A 0200-09090
184 Arbogast Hawaiian Sputter Fuss Fish Lure
185 Arbogast Hawaiian Wiggler #2 1/2 Sputter Fuss 251 F Frog Skirt Box Pamphlet EUC
186 Assorted Matzuo Lure lot (3) Prism Shad Spit & Sputter, Zen Double Play Crank
187 Aurion B-MBT-48 Matchbox Prodik 30kW T300 for RF Sputtering Disposition Chamber
188 Aviza Technology 188850 150mm Back Sputter Shield Trikon
189 AZO- Sputtering Target
190 BALL BEARING, SPUTTERING COMPONENTS, P/N: 100195
191 Balzers 150mm Wafer Carousel Assembly LLS 801 Sputtering System
192 Balzers 200mm Wafer Carousel Assembly LLS 801 Sputtering System
193 BALZERS 5×10″ Sputtering Target 99.999 Pure 95%Al Aluminum+1%Si+4%Cu BD 483790-T
194 Balzers 90/92 Coating Materials Sputtering Targets Evaporation Sources Catalog.
195 Balzers 90-88749 LLS 801 Sputtering System Manual
196 Balzers BAK 642 Sputtering System
197 Balzers Coating Materials Sputtering Targets Evaporation Sources 84/86 Catalog.
198 Balzers D12/45216951 Remote Control for Wafer Sputtering System
199 Balzers LLS 801 Sputtering System Operating Manual
200 Balzers Manual Set Unaxis LLS 502 Load Block Metal Film PVD Sputtering System
201 Balzers MC 515 BK221410-T Magnetron For LLS 502 Sputtering System
202 Balzers Unaxis Sputter Target AITi Ring ARQ 131 M00-1074/1 01-342081
203 Barium sputter target Ba 99.9% purity 2″ diameter x 0.25″ thick
204 Bayville chemical carbon sputtering target (99.99%) 2″ diameter 0.125″Thk AA-17
205 Big End Bearings KOLBENSCHMIDT Sputtering BMW 2.5d 3.0d 24V M57D30 M51D25 E71 X6
206 Big End Bearings KOLBENSCHMIDT Sputtering VW T5 Transporter Bus 2,5l Tdi Axe Axd
207 BIG END BEARINGS Sputtering KS VW Audi Seat Skoda 1, 9L TDI PD AJM AUY ATD atj
208 Big End Bearings without Cleats Sputtering Glyco 71-3904 0,25mm Oversized 1,2
209 Bio-Rad Polaron E6700 Turbo vacuum coating ?sputter evaporation bell jar coater
210 BioRad Polaron E7000 Freeze Fracture Sputter Coater Vacuum Chamber Bell Jar
211 Bismuth Selenide , Bi2Se3 – Sputtering Target
212 Bismuth sputter target, 99.999% pure Bi, 2.00″ diam x 0.25″ thk
213 Bismuth Sputtering Target, 3.00″ D x 0.25″ thick, 99.999% pure
214 Bismuth Telluride, Bi2Te3 – Sputtering Target
215 Black Wheel Cap for 2021 2022 KIA Sorento for 20-inch Sputtering Wheel Rim
216 Bohemia Jihlava JS14071, 10-Inch Crystal Vase with Platinum Gold Sputtering
217 Bohemia Jihlava JS16914, 10-Inch Crystal Vase with Blue/Gold Sputtering
218 Bonfire Sheet Sputtering Sheet Bonfire Board Seat Heat Welding   Authentic
219 Bonfire Sheet Sputtering Sheet Bonfire Board Seat Heat Welding   Authentic
220 Boron sputtering target B 99.5% purity, 2″ diameter x 0.125″ thick
221 Boron, B – Sputtering Target
222 Brian CHAPMAN / Glow Discharge Processes Sputtering and Plasma Etching
223 BUHLER SPUTTERING TARGET 6333032265 LOPH-14120-001 Target 320x100x8
224 Bumper Sticker “Our ’38 Ford Is Sputtering” 1938 Classic Collector 14″
225 Burbank Sportscards – World’s Largest Selection
226 BZ-1730-21-A – Leybold Heraeus – CONTACT ELEMENT – FOR SPUTTERING 011/110
227 Cadmium SEM Sputtering target: Cd 99.99% pure, 57mm diameter x 0.25mm thick
228 Cadmium sputtering target Cd 99.99% pure 2″ diam x 0.25″ thk
229 Cadmium Sulfide, CdS – Sputtering Target
230 Calcium (reactive) sputter target Ca 99.9% 2″ diam x 1/4″ thk
231 Calcium Fluoride, CaF2 – Sputtering Target
232 Calcium Manganate, CaMnO3 – Sputtering Target
233 Calcium Ruthenate, CaRuO3 – Sputtering Target
234 Calcium Ruthenium-Titanate, Ca(Ru0.5Ti0.5)O3 – Sputtering Target
235 Calcium Titanate, CaTiO3 – Sputtering Target
236 Canon / Anelva 912-7060 Sputter Ion/Noble Ultra High Vacuum Pump 400 L/sec
237 CANON / ANELVA C-7300,PVD, SPUTTERING SYSTEMS “2010 vintage” , wafer size 12″
238 Canon Anelva 1015i Sputtering System – 6″
239 CANON ANELVA Sputtering Equipment C-7530 HF
240 Canon/Anelva C7100 PVD, SPUTTERING SYSTEMS *SJ3
241 Carbon SEM Sputtering target: C 99.999% pure, 54mm diameter x 1mm thick
242 Carbon sputtering target C 99.999% 2″ diameter x 0.25″ thick ACI ALLOYS
243 CdS, 99.99%, 18” x 3.5” x 0.250” Sputtering Target, Bonded Cu BP/I
244 Cerac Aluminum Al Sputtering Target 5″ x .25″
245 Cerac Chromium Silicide, CrSi2 Sputtering Target 5.94″ x .253″
246 Cerac Indium-Tin Oxide 5 ” high Purity Sputtering Target
247 Cerac Specialty Inorganics Titanium Oxide TiO2 Sputtering Target
248 Cerac Titanium Sputter Target 99.999% Pure
249 Ceramic Back Sputter Shield
250 CHIYODA GREEN SPUTTER RESISTANT TUBING PN# TE-10AFG-20
251 CHROMA ET535/50M SPUTTER/HARD COATED
252 Chrome sputtering target Chromium 5 inch round Varian MDP
253 Chromium Cr Sputtering Targets – 2.00″ Diameter, 0.250″ Thick – Kurt J. Lesker
254 Chromium sputter target, Cr 99.95% pure, 2″ diameter x 0.125″ thick
255 Chromium sputter target, Cr 99.95% pure, 2″ diameter x 0.25″ thick
256 CIGS – Sputtering Target – for solar cells
257 Cisco Kid Topper Top Water Buzz Sputter Bait Muskie Pike Bass Black Gold
258 Clunk & Sputter by Muerte Pan Alley (CD, 2014)
259 Co/Fe Sputtering Target: 90/10 At% 3N5 2” x 3mm Thick
260 Cobalt Chrome sputter target Co/Cr 83/17 at%, 99.95% pure, 3.0″ dia x 6mm thk
261 Cobalt Co Sputtering Targets – 2.00″ Diameter, 0.250″ Thick – Kurt J. Lesker
262 Cobalt Iron Aluminum sputter targe Co2/Fe/Al 99.95% 2″ diameter x 0.125″ thick
263 Cobalt Iron Boron sputter target (Co/Fe/B 6:2:2 at%, 99.9%) 1.50″ diam 2mm thick
264 Cobalt Iron Boron sputter target, Co/Fe/B 99.9% pure, 2″ diam x 3mm thk
265 Cobalt Iron Zirconium sputter target Co/Fe/Zr 60/25/15 at% 1.0″ diam x 0.1″ thk
266 Cobalt Manganese Silicon sputter target, Co2MnSi heusler alloy, 2″ dia x 3mm thk
267 Cobalt sputter target, 99.98% pure, 2″ diameter x 0.125″ thick
268 Cobalt sputter target, Co 99.95% pure, 1.00″ diameter x 0.045″ thick.
269 Cobalt Titanium sputter target Co/Ti 1:1 At% 99.95% 2“ diam x 1/4” thk
270 Cobalt with Iron, Boron & Silicon mixture- Sputtering Targets
271 Cobalt, Co – Sputtering Target
272 Cobalt/Iron sputter target, Co/Fe 50/50 weight% 99.95%, 2.00″ diam x 0.125″ thk
273 Cobalt/Iron/Boron sputter target Co/Fe/B 60/20/20 4″ diam x 0.079″ thick
274 Cobalt-Iron sputter target: Co/Fe 50/50 At% 3” x 0.08” Thick
275 Colored Sputtering Paint Shower Curtain Abstract Graffiti Bathroom Accessory Set
276 COMPUTATIONAL EXPLORATIONS IN MAGNETRON SPUTTERING By E. J. Mcinerney
277 Connecting Rod Bearing Kit Rotary VW Audi TDI 1,9l 1z AAZ AFN ASV AHF AVG 71-384…
278 Connecting Rod Bearing kolbenschmidt magnetrons BMW 2.5d 3.0d 24v m57d30 m51d25 …
279 Connecting Rod Bearing kolbenschmidt magnetrons VW t5 TRANSPORTER VAN 2,5l TDI A…
280 Connecting Rod Bearing magnetrons Audi VW 1,9l 2,0l 2,5l TDI ARL AVF ASZ Bottle …
281 Connecting Rod Bearing magnetrons Audi VW 1,9l 2,0l TDI BOTTLE BKD BLB BMM BL…
282 Connecting Rod Bearing magnetrons BMW e36 e39 e46 e60 525 530 TDS 6zyl. Diesel m…
283 Connecting Rod Bearing magnetrons GLYCO Mercedes Diesel C-Class E-Class
284 Connecting Rod Bearing magnetrons GLYCO Racing VW Audi Seat 1,8l 2,0l 16v Turbo …
285 Connecting Rod Bearing magnetrons GLYCO VW AUDI SEAT SKODA 1,2 1,4 1,9 TDI
286 Connecting Rod Bearing magnetrons kolbenschmidt VAG VW AUDI SEAT SKODA 1,9 2,0 T…
287 Connecting Rod Bearing magnetrons KS 0,25mm VW Audi Seat 1,8l 2,0l 16v Turbo 16v…
288 Connecting Rod Bearing magnetrons KS Racing Audi 5zyl. 2,2l s2 rs2 s4 s6 3b ABY …
289 Connecting Rod Bearing Set Sputtering VW Audi Tdi 1,9l 1Z Aaz AFN Asv Ahf AVG
290 Connecting Rod Bearing Sputtering GLYCO Mercedes Diesel C-Class
291 Connecting Rod Sputtering Audi VW 1,9l 2,0l 2,5l Tdi Arl Avf Asz Bkd Bmm 71-3930
292 Connecting Rod Sputtering Audi VW 1,9l 2,0l Tdi Azv Bkd Blb Bmm Blt Axc Aws
293 Connecting Rod Sputtering KOLBENSCHMIDT BMW 4Zyl. Diesel M47D20 318d 320d E39
294 Connecting Rod Sputtering KOLBENSCHMIDT VAG VW Audi Seat Skoda 1,9 2,0 Tdi
295 Connecting Rod Sputtering Ks Racing Audi 5Zyl. 2,2l S2 RS2 S4 S6 3B Aby Adu Aan
296 Connecting Rod Without Cam Sputtering VW Audi 1,2 1,4 1,9 Pd GLYCO 71-3904 Pair
297 Connecting Rod Without Cam Sputtering VW Audi 1,2 1,4 1,9 Pd GLYCO 71-3904 Set
298 CONROD BIGENG BEARINGS +0.5MM FOR MERCEDES BENZ M 276 DE35 SPUTTER REPLACEMENT
299 Copper Magnesium sputter target: Cu/Mg 98/2 wt%, 99.9% pure, 3″ dia x 6mm thk
300 Copper Nickel sputter target Cu/Ni 55/45 at% 99.99%, 1.00″ dia x 0.125″ thick
301 Copper Oxide Sputtering Target CuO 99.995″ Pure 2″ x .1875″ thick +Backing Plate
302 Copper Oxide, Cu2O – Sputtering Target
303 Copper SEM Sputter target: Cu 99.995% pure, 57mm diameter x 0.25mm thick
304 Copper sputter target Cu 99.997% 2″ diameter x 0.25″ thick: ACI ALLOYS
305 Copper, Cu – Sputtering Target
306 Copper/Gallium/Indium sputter target Cu/Ga/In (32.9/11.3/55.8 wt%) 1.5″ x 0.15″
307 Copper/Manganese sputter target Cu/Mn 86.5/13.5 at% 1.5″ dia x 0.125″ thk
308 Copper/Nickel sputter target Cu/Ni 95/5 at% 99.99% 1 inch diam x 1/8 inch thk
309 Cover Food Splash Guard Microwave Anti-Sputtering with Steam Vents Magnetic
310 Cover Microwave Oven Food Cover Anti-Sputtering Heat Resistant Lid Household
311 CPI CPW2870B10-47 Power Supply 27-158946-00 36kW Sputtering 460V Input PARTS
312 Crystal Goose 7 Oz Wine Glasses on a Long Stem with Gold and Platinum Sputtering
313 Crystal Goose 7.1 Oz. Wine Glasses on a Long Stem with Gold Sputtering
314 Crystal Goose 7.1 Oz. Wine Glasses on a Long Stem with Gold Sputtering
315 Crystal Goose 8 Oz. Wine Glasses on a Long Stem with Gold Sputtering
316 Crystal Goose 8.11 Oz. Wine Glasses on a Long Stem with Gold Sputtering
317 Crystal Goose Two Glass Salad Bowls with Golden Sputtering
318 CTI-Cryogenics 8113008 On-Board FastRegen Control Sputtering Module
319 CTI-CYROGENICS ON-BD FAST REGEN CONTROL SPUTTERING 8129948G001 T13-D6
320 CuGa – Sputtering Target – 99.99% purity
321 CUSTOM SPUTTERING SYSTEM W/ 5 SPUTTERING SOURCE & 1 EVAPORATION SOURCE
322 CVC Products 2800 Load Lock Dual Process Chamber Sputtering System with Handler
323 CVC Products Inc 2800 Sputter Shields Shutter Segments Cathode Stations Cleaned
324 CVC Products Vacuum Sputter Deposition System ENI RF Generators ACG 10
325 CZTS & CZTS-Se- Copper-Zinc-Tin-Sulfur-Selenium Sputtering Targets
326 DC/RF Dual-Head High Vacuum 2″ Magnetron Plasma Sputtering Coater
327 Delta sputter target: Aluminum Al 99.999%,vacuum sealed, 200mm x 0.25″
328 Denton Explorer 14 Sputter 2 Target, RF Generator, Matching Network, Turbo Pump
329 Denton vacuum desk carbon rod accessory 120volt
330 DENTON VACUUM DESK II Sputter Coater SEM Thin Film Deposition
331 Denton Vacuum Desk II Sputter Coater SEM Thin film Deposition *Parts/Repair*
332 Denton Vacuum DESK II Sputter Coater w/ Carbon Coater and Accessories
333 Denton Vacuum Desk-1 Cold Sputter Etch Unit
334 Denton Vacuum Desk-1 Cold Sputter Etch Unit Sputter coater and DCP-1 module
335 Denton Vacuum DV-502A High Vacuum sputtering parts transformer power supply
336 Denton Vacuum DV-502A High Vacuum sputtering parts valves
337 Denton Vacuum II Sputter / Sample Coater SEM Sample Prep
338 Desktop Magnetron sputtering PVD coating machine for fuel cell electrode sputter
339 DEUBLIN ROTARY UNION FOR SPUTTER ASSY, AMAT 0190-40352 SP0326
340 Disney Pixar Cars Dan Haulin’ dinoco 400 #92 Sputter Stop cab
341 Disney Pixar Cars Lot Mack Hauler Truck 1:55 Diecast Model Car Toys Loose
342 Disney Pixar Cars McQueen 1:55 Diecast Movie Collect Car Toys Gift Boy Loose
343 Disney Pixar Cars McQueen 1:55 Diecast Movie Collect Car Toys Gift Boy Loose
344 Disney Pixar Cars Sputter Stop Kmart Exclusive Collector Days 1 Racer #92
345 DISNEY PIXARCARS/PISTON CUP SPUTTER STOP NO.92 DIECAST VEHICLE ON CARD
346 Duniway Stockroom Corp. IPC-0062 Varian Sputter Ion Pump Control Unit PARTS
347 Duniway Stockroom GIP/25-TAP-M Sputter Ion Pump  10-4 torr – 10-11 torr vacuu
348 Dysprosium sputtering target Dy 99.9% 2″ diameter x 0.125″ thick: ACI ALLOYS
349 Early Arbogast Hawaiian Sputter Fuss Spinner Spoon Fishing Lure
350 Edwards S150B Sputter Coater T8840 Au/Pd 60mm *1 w/ Outlet Mist Filter MF20
351 Edwards S150B Sputter Coater Works
352 EDWARDSS150B SPUTTER COATER WITH EDWARDS #2 VACUUM PUMP
353 Electromagnet for Nordiko Sputtering System
354 ENI 791521 DCG100 sputter module
355 ENI DCG-100A 10kW DC Sputtering Plasma Power Supply/Generator DCG2D-A031100021I
356 ENI OEM-50N-11601 13.56 MHz RF Plasma Generator Solid State for Sputter Chamber
357 Eratron PPS 8210 2KV RS MF 10kW DC Sputtering Plasma Power Supply with Castors
358 Eratron PPS 8210 RS MF 10KW DC Sputtering Plasma Power Supply
359 Eratron PPS 8210 RS MF High Power Sputtering Plasma Power Supply Output: 10KW DC
360 Erbium sputter target: Er 99.9% 2″ diameter x 0.25″ thick: ACI ALLOYS
361 Ernest F Fullam Vintage Sputter Coater 5 Torr Vacuum Gage
362 ESPI Metals Monel KND2240 Sputter Target
363 ESPI Metals Tin Zn AI Sputtering Target .375″x4.75″x14.875″ Purity 5N
364 ESPI Metals Tin Zn Sputtering Target .375″x4.75″x14.875″ Purity 5N
365 Europium sputter target Eu 99.9% 2″ diameter x 0.25″ thick: ACI ALLOYS
366 EVAC Chain Clamp Sanitary Pipe Ultra Low Vacuum Sputtering Deposition Chamber
367 FEI DUNIWAY Sputter Ion Pump Module 4022 198 24924
368 FERROFLUIDICS ROTARY FEED THROUGH STAINLESS STEEL 52-110007 Sputtering Vacuum
369 FERROFLUIDICS ROTARY FEED THROUGH STAINLESS STEEL 7467 52-10007M  Sputtering
370 FIL-TECH G71PT .709″ PYREX TWIN TUNGSTEN FILAMENTS MRC STYLE SPUTTERING G-71-PT
371 FIL-TECH G71PT .709″ PYREX, TWIN TUNGSTEN FILAMENTS, MRC STYLE, SPUTTERING – NIB
372 Fire Force Enen no Shouboutai Flare & Sputter T-shirt Japan Limited Cosplay
373 Fireball Beach Disney Pixar Cars #92 Sputter Stop Sheldon Shifter 1:55 Diecast
374 FISHING LURE ARBOGAST SPUTTER FUSS
375 FISHING LURE FRED ARBOGAST 3″ SPUTTER BUG RED HEAD
376 Fison Ins Polaron SC7640 Auto/Manual High Resolution Sputter Coater – Made in UK
377 Fisons Instruments Polaron SC7610 Sputter Coater w/ Vacuum Chamber
378 Fred Abrogast Hawaiian Wiggler lure lot (5) Sputter Fuss 3/8 oz 1/2 oz
379 Fred Arbogast Hawaiian Fishing Lure – Sputter Fuss
380 Fred Arbogast Sputter Fuss Hawaiian Fishing Lure
381 Fred Arbogast Sputter Fuss Hawaiian Fishing Lure
382 Ga2TeO3 – Sputtering Target – 99.99% purity
383 GAS DISTR. PLATE SPUTTER, AMAT 0020-09933
384 Ga-ZnO – Sputtering Target – 99.99% purity
385 GENERIC SQT-0054 SPUTTER TABLE CHUCK OSR24544 SQT0054
386 Generic Water Cooled Jacket for Sputtering / Vacuum Bell Jar Chambers
387 Germanium sputter target Ge 99.999% 2″ diameter x 0.25″ thick: ACI ALLOYS
388 Germanium Telluride (GeTe) Sputtering Target, 3″ D x 0.125″ thick 99.999% pure
389 Germanium-antimony-tellurium sputter target Ge2Sb2Te5 99.999% 1″ diam x 5mm thk
390 Glass For Viewport UHV Sputtering
391 Glow Discharge Processes : Sputtering and Plasma Etching, Hardcover by Chapma…
392 Glow Discharge Processes : Sputtering and Plasma Etching, Hardcover by Chapma…
393 GLOW DISCHARGE PROCESSES: SPUTTERING AND PLASMA ETCHING By Brian Chapman
394 Glow Discharge Processes: Sputtering and Plasma Etching by Brian Chapman
395 Glow Discharge Processes: Sputtering and Plasma Etching, Chapman, CHAPMA-,
396 GLYCO Connecting Rod Sputtering Volvo C70 S40 S60 S70 S80 V40 V60 V70 XC40 XC60
397 Glyco Main Bearing Connecting Rod Sputtering Thrust Washers VW Audi 1,8T 20V S3
398 GLYCO Main Bearings Rod Bearing magnetrons Thrust Washers VW Audi 1,8t 20v s3 ba…
399 Gold SEM Sputter target: Au 99.99% pure, 54mm diameter x 0.1mm thick
400 Gold SEM Sputter target: Au 99.99% pure, 57mm diameter x 0.1mm thick
401 Gold Target for MNT-JS1600 Plasma Sputtering Coater 50mm dia x 0.1mm (99.999%)
402 GREAT CONDITION-Mattel Disney Pixar Cars *SPUTTER STOP*-Never Opened-RARE
403 Great Prices and Quality from DeCluttr. 3m+ Feedbacks
404 Growth of High Permittivity Dielectrics by High Pressure Sputtering
405 GUND – SPUTTER THE BEAVER – #1553 – 9″
406 Gund 1992 SPUTTER BEAVER w Bouquet & Tags 1553
407 Gund 1992 Sputter Beaver White Pink Bouquet Stuffed Animal Plush Rare
408 H shaft connecting rod g60 steel connecting PG 1h + Connecting Rod Bearing magne…
409 Hafnium , Hf – Sputtering Target – 99.95% purity
410 Hafnium Oxide, HfO2 – Sputtering Target – 99.95% purity
411 Hafnium sputter target 99.99% pure Hf (<0.2% Zr) 2.00″ diam x 0.25″ thk
412 Hafnium sputter target, 99.9+% pure, 1.50″ diameter x 0.125″ thick
413 Hafnium/Silicon Hf/Si 1:1 at%, sputter target 4″ diam x 7mm thk, 99.9% pure
414 Handbook of Sputter Deposition and Technology HCDJ Wasa Hayakawa
415 Handbook of Sputter Deposition Technology : Fundamentals and Applications for…
416 Handbook of Sputter Deposition Technology : Fundamentals and Applications for…
417 Handbook of Sputter Deposition Technology: Fun.. 9781437734836 by Wasa, Kiyotaka
418 Handbook of Sputter Deposition Technology: Fund, Wasa.=
419 Handbook of Sputter Deposition Technology: Fundamentals and Applications for
420 HANDBOOK OF SPUTTER DEPOSITION TECHNOLOGY: PRINCIPLES, By Kiyotaka Wasa VG
421 Handbook of Sputter Deposition Technology: Principles, Technology and…
422 Hawaiian Sputter Fuss 2 1/2″ Long 5/8 0z. Yellow with multi color skirt
423 High Power Impulse Magnetron Sputtering : Fundamentals, Technologies, Challen…
424 High Power Impulse Magnetron Sputtering : Fundamentals, Technologies, Challen…
425 High Power Impulse Magnetron Sputtering: Fundam, Lundin, Daniel,,
426 High Purity 99.999% 5N Al Aluminum Sputtering Target Diameter 2” Thick 5mm
427 High Purity 99.999% 5N Al Aluminum Sputtering Target Diameter 70mm Thick 5mm
428 High Purity 99.999% 5N Al Aluminum Sputtering Target Diameter 70mm Thick 5mm
429 High Vacuum Deposition “Sputtering” Coating Machine
430 High Vacuum Heated Sensor Viewport / RGA Sputtering Analysis
431 Holmium sputter target Ho 99.9% 2″ diameter x 0.25″ thick: ACI ALLOYS
432 Honeywell 0190-20139/D 300mm Sputtering Target AMAT Applied Materials
433 Honeywell 037-0173-25 Sputtering Target 300mm
434 HONEYWELL 080796 Sputtering Target 5N5 TI 0437x11625x12555 BPM
435 HONEYWELL 084795 Sputtering Target 5N Al5Cu 7830x11640x13050
436 Honeywell 090113 SPUTTERING TARGET 5N5 Al1Si.5Cu 12.555X11.625X1.600IN
437 Honeywell Sputtering Products 5N Ti Titanium) Target 20.625X17.478X1.000X0.500IN
438 Honeywell Sputtering Vectra Coil TSVCTISET-07935 OPENED READ
439 Honeywell target, M2000 sputtering, 59 Ti, .500X4.460X13.050 inches, PI000-04462
440 Honeywell target, M2000 sputtering, 59.5Ti/.5CU, 4.460X11.64X13.050, PI000-05076
441 Honeywell target, sputtering, M2000 49.5 Ti,.500X4.460X13.050inches, PI000-04462
442 HONEYWELL TSENAL-MOX-06514 Sputtering Target 595AL5Cu 1910x11300x14495
443 Honeywell TSQUALWDX-07821 Sputtering Target 59Al/1Cu 7.830×11.640×13.050″
444 HOT WHEELS EDITIONS: #92 ’59 CADILLAC #98 ’03 SIDE SPUTTER
445 Huttinger 1841105-04 PCB TE 1714481 Plasma Sputtering System Trumpf
446 Huttinger 935416-16 Backplane Interface PCB Plasma Sputtering Trumpf
447 Huttinger Electronik TIG 30 DCplus Plasma Sputtering Controller Trumpf
448 Huttinger THE 478052 PCB Plasma Sputtering System Trumpf
449 Huttinger TIG 10/100 Sputtering Plasma Control Panel
450 HUTTINGER TIG 10/100P Sputtering Plasma Control Panel
451 Huttinger TIG 60 DC Plasma Sputtering Controller
452 Huttinger Trumph TIG 30 DCPLUS 30kW Plasma Sputtering Controller DC Plus kw
453 Huttinger Trumph TIG 30 DCPLUS 30kW Plasma Sputtering Controller DC Plus kw
454 IKC Chain Clamp Sanitary Pipe Ultra Low Vacuum Sputtering Deposition Chamber
455 Inconel 600 Sputter target: Ni/Cr/Fe 99.95% pure 2.00″ dia x 3mm thick
456 Indium Oxide (In2O3) Sputtering Targets- 99.99% Pure 3.00″ dia x 0.1875″ thick
457 Indium Tin Oxide (Kurt Lesker) sputtering target 4″ x .125″ thk 99.99% pure
458 Indium Tin Oxide sputter target: ITO 90/10 99.99% pure, 3″ x 0.1″ bonded to Cu
459 Indium Tin Oxide, ITO – Sputtering Target – 99.99% purity
460 Indium, In – Sputtering Target – 99.999% & 99.99% purity
461 Inficon SQM160-S-2-R Thin Film Deposition Monitor 2-Inputs, RS-232, 120/240VAC
462 InGaZnO4 – Bonded Target, – Sputtering Target – 99.99% purity
463 Innotec High Vacuum Batch Sputtering System Chamber
464 International Scientific Instrument PS-2 Coating unit Sputter Coater
465 Intevac Vacuum System Division TM-Gun Sputtering Source
466 Ion Implantation : Sputtering and Their Applications Hardcover P.
467 ION SPUTTER E1O1O HITACHI
468 Iron (Fe) Sputtering Targets – 2.00″ Diameter, 0.250″ Thick – Kurt J. Lesker
469 Iron SEM Sputter target: Fe 99.95% pure, 57mm diameter x 0.5mm thick
470 Iron SEM Sputter target: Fe 99.95% pure, 63mm diameter x 0.5mm thick
471 Iron Silicon Boron , FeSiB – Sputtering Target – 99.9% purity
472 Iron sputter target, 99.95% pure, 3″ diameter x 1mm thick
473 Iron sputtering target Fe 99.99% 2″ diameter x 0.0625″ thick: ACI ALLOYS
474 Iron, Fe – Sputtering Target
475 Jars Sputtering Anode Shields
476 JEGS – Selection, Value, Lifetime Support Since 1960…
477 JEOL FINE COAT Ion Sputter JFC 1100 BEAM W OMRON Miny Timer Type SYS
478 Johnson Matthey Sputtering Target mat’l: 49.5W/10Ti
479 Julanie Bonfire Stand Sheet Bonfire Sheet Sputtering Sheet Fire  Authentic
480 Junron SP4 Green Sputtering Tube, For Spot Welder 2040
481 Junron SP4-08 (GREEN) Sputtering Tube (Tube for Spot Welder) FNFP
482 Junron SP4-10 Sputtering Tube for Spot Welder
483 Junron SP4-10 Sputtering Tube for Spot Welder
484 Junron SP4-10 Sputtering Tube for Spot Welder
485 Junron SP4-10 Sputtering Tube for Spot Welder USIP
486 JX Nippon Mining & Metals FNx-000654B Sputtering Target 5N 17 17
487 JX Nippon Mining Metals FNX-000544 F Sputtering Target 4N5 T7 17.508″x0.138″ DB
488 KEYED SHAFT SHAFT TRANSPORT BUFFER PN1001808 22.25 LONG 5/8 SPUTTER TOOL
489 KFMI 200MM SPTS SPUTTERING AL TARGET AL-0.5%CU (5N5)
490 KFMI 20CT17224 SPUTTERING AL TARGET 5N TI
491 KIA wheel ap for 2021 2022 KIA Sorento for 20-inch Sputtering Wheel Rim
492 Kimball / PHI Vacuum Electrical Feedthrough / Ion-Gun Sputtering 1.33″ CF Mini
493 KURT j LESKER  1 INCH OXIDE/TIN OXIDE SPUTTER TARGET
494 Kurt J Lesker Co. Zinc Oxide Sputtering Targets
495 Kurt J Lesker sputtering target Molybdenum (99.95%) 3″ diameter 0.1250″ THK
496 Kurt J Lesker sputtering target Ni-Cr target 80-20, 2″ – 0.125″ THK, 99.9%
497 Kurt J Lesker sputtering target Ni-Cr target 80-20, 3″ – 0.125″ THK, 99.9%
498 Kurt J Lesker sputtering target N-type doped Si (99.999%) 2″ – 0.250″ THK
499 Kurt J Lesker sputtering target Silicon Si undoped (99.999%) 2″ – 0.250″ THK
500 Kurt J. Lesker 108 Sputter
501 Kurt J. Lesker 750-005-G1 Sputtering Shutter Module Front Load Sensor
502 Kurt J. Lesker Cobalt Co Sputter Target 99.95% Pure, 4.00″ Dia. x 0.250″ Thick
503 Kurt J. Lesker Hafnium Hf Sputter Target 99.99% Pure, 3.0″ Dia. x 0.250″ Thick
504 Kurt J. Lesker Nickel Ni Sputter Target 99.99% Pure, 4.00″ Dia. x 0.250″ Thick
505 Kurt J. Lesker SILICON DIOXIDE (SiO2} Sputter Target, 3″ X .250 THICK, NOS
506 L.A. Girl Splatter Nail Lacquer Polish #355 Sputter
507 LADD MODEL# 30800 SPUTTER COATER
508 LADD MODEL# 30802 POWER SUPPLY FOR THE SPUTTER COATER
509 LAM / MRC Materials Research CORP. DC SPUTTER CONTROL PCB, P/N 880-71-000 REV G
510 Lam Research 15-135892-01 Sputtering Target Pedestal
511 LAM RESEARCH 715-026923-312A SPUTTERING TARGET HTR/BP ASSY
512 LAM RESEARCH ECHUCK328 SPUTTERING TARGET, 300MM (PARTS) 839-019090-328
513 LAM RESEARCH ECHUCK328 SPUTTERING TARGET, 300MM 839-019090-328
514 Lanthanum sputter target (99.9% La/TREM), 1.00″ dia x 0.125″ thick, in oil
515 Large pure silicon crystal ingot sputtering target polysilicon poly-silicon
516 Lead sputter target Pb 99.99% 2″ diameter x 0.25″ thick: ACI ALLOYS
517 Leybold / Balzers ZH620 Corona Sputtering System – Fully Operational
518 Leybold Coolpak 6000 Helium Compressor Removed From Pvd Sputtering Machine Q
519 LEYBOLD CORONA SPUTTERING SYSTEM ELEVATOR BOARD KHV-02
520 LEYBOLD CORONA SPUTTERING SYSTEM ELEVATOR BOARD KHV-02
521 LEYBOLD HAEREOUS Z660 DEPOSITION SPUTTERING
522 Leybold Heraeus z650 6″ Sputtering substrate holder
523 Leybold INFICON Sputter Discharge Sensor Head
524 Leybold WEA02 sputtering power supply
525 Leybold ZV6000 In Line Sputtering System / Dual Sided
526 Light Gold Sputter Window Tint Film VLT 70% Mirror Reflective Car Glass Anti-UV
527 Lithium Niobate, LiNbO3 – Sputtering Target – 99.99% purity
528 LITHIUM SPUTTERING, DEPOSITION AND EVAPORATION: CONTROLLED By Martin J. Neumann
529 LMO – LaMnO3 Sputtering Target – 99.9% purity
530 LSMO – La0.7Sr0.3MnO3 Sputtering Target – 99.9% purity
531 LTS Chemical inc sputtering target carbon (99.999%) 2″ diameter 0.1250″ AA-14
532 Magnesium Fluoride, MgF2 – Sputtering Target – 99.99% purity
533 Magnesium sputter target Mg 99.95% 2″ diameter x 0.25″ thick: ACI ALLOYS
534 MAGNET GUARDMICROWAVE HOVER ANTI-SPUTTERING COVER
535 MAGNET MICROWAVE GUARD HOVER ANTI-SPUTTERING COVER
536 Magnetron Dual Head High Vacuum DC / RF Plasma Sputtering Coater CY-600-2HD
537 Magnetron Sputtering System for Multilayer Film Deposition with 3 S-Gun Cathodes
538 Main Bearing Big End GLYCO Sputtering Reinforced Audi VW 1.9 TDI AFN AHF ASV AVG
539 Main Bearings Rod Bearing Axial Bearing magnetrons Racing VW 1,6-2,0 reinforced …
540 Main Bearings Rod Bearing magnetrons VAG 1,8t 20v reinforced AGU AUM AJQ AEB ANB…
541 Manganese sputter target, 99.9% pure, 1.0″ diameter x 0.05″ thick
542 Manganese, Mn – Sputtering Target – 99.9% purity
543 Manganese/Tellurium sputter target Mn/Te (1:1 at%), 1.5″ diam x 0.15″ thk
544 Manganese-Germanium, Mn3Ge – Sputtering Target – 99.9% purity
545 Manganese-Tin, Mn3Sn- Sputtering Target – 99.9% purity
546 Material Research Corp MRC 603-III Sputtering Chamber 3-Targets on Side
547 Material Research Corporation Ni Mz Nickel Magnesium Sputtering Target
548 Material Research Corporation VP Vanadium Sputtering Target
549 Materials Research Corporation MRC RIE 61 Sputtering System. Ion Etcher
550 Materials Research Corporation XXB-100 electron beam sputtering system kit
551 Materion 101119284 Sputtering Target 16×6 Balzers
552 Materion 99.99% Tantalum Ta 12.98″ x.25″ Sputtering Target AMAT Centura
553 Materion Al/Cu 0.5% High Purity Sputtering Target, 12.98″ x 0.25″
554 Materion Al/Cu 0.5% High Purity Sputtering Target, 12.98″ x 0.25″,
555 Materion NiFe 14W Sputter Target 10”Dia #US2227245. 553255-10 ZTH8000 NOS
556 Materion Silicon SI Sputter Target 0001703733 314259 2.9921″ DIA X 0.1969″
557 Materion Sputter Target # US1637146.
558 Materion Titanium Sputtering Target 12.73″ x 1.9″ Purity 99%
559 MeiVac 2460 Chamber Lid Control Module Vacuum Sputter System
560 Mill Lane Engineering 4 source load locked with plasma clean sputter system
561 Mint Condition LEYBOLD CORONA SPUTTERING SYSTEM ELEVATOR BOARD KHV-02
562 MKS ENI DCG-100 DC sputtering power supply. Master
563 Moly Chrome sputter target: Mo/Cr 85:15 at%, 2.00″ dia x 0.25″ thick, 99.9% pure
564 Molybdenum (Mo) sputter target, 99.99% pure 1.7″ diam x 0.125″ thick
565 Molybdenum Chrome sputter target MoCr 95/5 99.95% 3″ diameter x 0.25″ thick
566 Molybdenum di sulfide, MoS2 – Sputtering Target – 99.5% purity
567 Molybdenum silicide-Sputter Target – 99.5%
568 Molybdenum sputter target, Mo 99.95% 2″ diameter x 0.25″ thick
569 Molybdenum sputter target, Mo 99.95% pure, 1.5″ diameter x 0.25″ thick
570 Molybdenum trioxide, MoO3 – Sputtering Target – 99.99% purity
571 Molybdenum, Mo – Sputtering Target
572 MRC 20-555B-NB000-9000 NIOBIUM 99.8 RMX12 ASSY Sputtering Target Plate
573 MRC 5″ Stainless Steel ZINC Backing Plate, 808-03-005 Sputtering Target
574 MRC 500354-00 Belt, Timing .5W X15 Long Sputtering Tool
575 MRC 500665-00 Pin, Arm First, Sputtering Tool
576 MRC 500670-00 Bearing, Thrust Sputtering Tool
577 MRC 500676-00 Bearing Sputtering Tool
578 MRC 500681-00 Thermostat, Tempswitch Sputtering Tool
579 MRC 500691-00 Standoff, Vented Sputtering Tool
580 MRC 500737-00 Bearing, Arm (Elbow) Sputtering Tool
581 MRC 6.5 In Magnetron Sputter Cathode
582 MRC 808-88-100 NI/FE19% Mounted 6″ x 0.25″ TH Sputtering Target
583 MRC 828-04-200 VP Nickel 15″ x 4.75″ x 0.25″ Sputtering Target
584 MRC A114265 Quad 1000 RF Deck Sputter Power Supply 3500 VDC Eimac SK-4063-500Z
585 MRC Materials Research A115015 Sputtering System Remote Stand Rev. C
586 MRC Materials Research A120024 Sputtering System Remote Stand Eclipse Star
587 MSDS Materion Cr Chromium 99.95% 4″ Dia x 0.25″ Sputtering Target Plate
588 MTI Corporation GSL-1100X-SPC-12 Compact Plasma Sputtering Coater
589 MURRAY CLUTCHBURN #92 SPUTTER STOP DISNEY PIXAR CARS 3 2016 SCALE 1:55
590 Muto Technology MT-49963 Sputter # 2/3 Cu Shield Kit 6″ 150mm Copper
591 MXL 910 Microphone MIC w/ Gold-sputter 6-micron diaphragm
592 Neodymium sputtering target Nd 99.9% 2″ diameter x 0.25″ thick: ACI ALLOYS
593 Nickel Moly Ni85Mo15 wt% sputter target- 1″ diameter x 0.25″ thick, 99.95% pure
594 Nickel Ni sputtering target- 99.99% pure 3.00″ diameter x 0.25″ thick
595 Nickel Oxide (NiO) Sputtering Target- 99.98% Pure 3.00″ dia x 0.125″ thick
596 Nickel SEM Sputter target: Ni 99% pure, 54mm diameter x 0.05mm thick
597 Nickel SEM Sputter target: Ni 99% pure, 57mm diameter x 0.025mm thick
598 Nickel SEM Sputtering target: Ni 99.9% pure, 57mm diameter x 0.25mm thick
599 Nickel sputtering target- 99.99% pure 2.00″ diameter x 0.125″ thick
600 Nickel sputtering target, 99.9% pure Ni, 3.00″ diameter x 0.125″ thick
601 Nickel sputtering target: 99.98% pure Ni, 1.00″ diameter x 0.25″ thick
602 Nickel Sulfide, Ni3S2- Sputtering Target – 99.5% purity
603 Nickel Titanium Ni/Ti 1:1 at% sputtering target: 2.0″ dia x 0.17″thk 99.99% pure
604 Nickel Vanadium(93:7 wt%), Ni-V – Sputtering Target – 99.95% purity
605 Nickel, Ni – Sputtering Target – 99.99%, 99.999% purity
606 Nickel-titanium sputter target: Ni/Ti 50/50 at%, 3″ dia x 1/4″ thk
607 Niobium 99.95% pure SEM sputter target, 57mm diameter x 0.5mm thick
608 Niobium Nb sputtering target: 3.99″ dia x 0.25″ thick 99.95% pure
609 Niobium Selenide, NbSe – Sputtering Target – 99.9% purity
610 Niobium sputtering target Nb 99.99% 2″ diameter x 0.25″ thick: ACI ALLOYS
611 Niobium Sputtering target: Nb 99.95% pure, 63mm diameter x 0.2mm thick
612 Niobium Titanium Nb/Ti 80/20 wt% sputter target: 3″ dia x 5mm thk 99.95% pure
613 Niobium, Nb – Sputtering Target – 99.95% purity
614 Nitoms Colo body floor Clean SC sputtering and expire adjustable length [26cm ~
615 No Name Copper Unbranded Sputter Sputtering Target 4FC5297 001 18MM ID
616 NORDIKO A08759 HEATER ASSEMBLY ~ 9606 METAL FILM PVD SPUTTERING COATING
617 Nordiko D00019 Platform Low Tension DC Power Supply 9550 PVD Sputtering
618 Nordiko D00021 Platform Low Tension DC Power Supply 9550 PVD Sputtering
619 Nordiko MAG AMP Rotating Magnet Amplifier Controller 9550 PVD Sputtering
620 Nordiko RF Viewport Shield CF160 Sputtering System
621 Nordiko RF Viewport Shield Sputtering System
622 Nordiko RF Viewport Shield Sputtering System @ 4″x4″
623 Nordiko Rotating Magnet Drive Controller Copley 423 9550 PVD Sputtering
624 Nordiko Rotating Magnet Power Supply Copley TR239-45 9550 PVD Sputtering
625 Nordiko Sputtering System Fast Shutter Actuator W/ Spinea Gear NTS00357
626 Nordiko Sputtering System PC Board Controller N600599EE
627 Novellus 00-672232-00 Turnbuckle Assy. For 3000 Series Sputter System
628 NOVELLUS 04-710723-05 REV M RF MAGNETRON 17-116776-00 RADIO FREQUENCY SPUTTERING
629 NRC Sputtering Chamber with Varian SD-700 Vacuum Pump – Cracked Jar
630 Oerlikon Sputtering System Motor Drive W/cooling Plate 10068415
631 OMP MAESM1AB Sputter Unit Interface MAE-SM1AB Control Board MAE SM1AB
632 OMP MAESM40A SPUTTER UNIT HV
633 OMP Maesm40A Sputter Unit HV with Maesm60A Sputter IGBT
634 Oryx Anelva Disposable Sputter Shield 215mm ANL62828
635 ORYX Sn Zn AI Sputtering Target .375″x4.75″x14.875″
636 ORYX Sn Zn Sputtering Target .375″x4.75″x14.875″ 65SN 35Zn nwt%
637 Osmium sputter target Os 99.9% 2″ diameter x 0.25″ thick: ACI ALLOYS, about 275g
638 OXFORD PLASMALAB SYSTEM 400 SPUTTER COATER
639 P5000 SPUTTER Process Kit. AMAT,
640 Palladium SEM Sputter target: Pd 99.99% pure, 57mm diameter x 0.1mm thick
641 Palladium sputtering target Pd 99.95% 2″ diameter x 1mm thick: ACI ALLOYS
642 Pella Pelco SC-7 Auto Sputter Coater Sputtering System (Ted Pella 7002)
643 Perkin Elmer 4400 Sputtering System
644 Perkin Elmer 4450 Sputtering PVD Tool Delta Target, Cryo Compressor, Vacuum pump
645 Perkin-Elmer 221-659-200 Pumpdown Control Gauge For 4450 Sputter System
646 Perkin-Elmer 4400 221-201-100 Auto Pumpdown Control Gauge Sputter System
647 Perkin-Elmer Sputtering system model 3140
648 PERKIN-ELMER ULTEK AUTO PUMPDOWN CONTROL GAUGE SPUTTER
649 Permalloy, Ni:Fe – Sputtering Target – 99.95% purity
650 Pfeiffer Vacuum Classic 590 Evaporator PVD Sputtering system
651 Planar Magnetron Sputtering Magnet Sierra Applied Sciences Patent #5,262,026.
652 Planar Magnetron Sputtering Magnet Sierra Applied Sciences Patent #5,262,026.
653 Planar Magnetron Sputtering Magnet Sierra Applied Sciences Patent #5,262,028
654 Plasma Sputtering Coater with Vacuum Pump Gold Target
655 Plasma Sputtering Coater with Vacuum Pump, Gold Target
656 plasmaterials lithium cobalt oxide sputter target LiCoO2 vacuum deposition
657 Plasmaterials Vanadium Sputtering Target 13.7″ x 0.4″ Purity 99.5%
658 Plasmionique FLR 300-TT Plasma Sputter Coater Etching
659 Platinum SEM sputter target Pt 99.99% 63mm diameter x 0.3mm thick: ACI ALLOYS
660 Platinum SEM Sputter target: Pt 99.99% pure, 57mm diameter x 0.1mm thick
661 PMN-PT – Sputtering Target – 99.9% purity
662 POLARON E6300 SPUTTER COATER SPUTTERING SYSTEM FISONS COATING CONTROL PANEL
663 POLARON E6300 SPUTTER COATER SPUTTERING SYSTEM FISONS POWER CONTROL PANEL
664 POLARON E6300 SPUTTER COATER SPUTTERING SYSTEM FISONS VACUUM CONTROL PANEL
665 Polaron Range Sputter Coater
666 Polaron Range Sputter Coater
667 Praxair Ceramics Ba-Sr-Ti-Zr 8″ Sputtering Target soldered to Backing Plate 413
668 Praxair Ceramics Sputtering Target Ba-Sr-Ti-Nb Oxide 99.9% 8″x 0.25″ (3163)
669 Praxair Ceramics Sputtering Target Ba-Sr-Ti-Y Oxide 99.99% 10″x0.25″ (3131)
670 PRAXAIR MRC 20-555B-MO000-300 MO MOLYBDENUM Sputtering Target Plate
671 PRAXAIR MRC MRCGTI0009678 TI TITANIUM Sputtering Target Plate
672 Praxair Sputtering Target Barium Strontium Ti-Y Niobium Oxide 99.99%
673 Pulsed and Pulsed Bias Sputtering: Principles a, Barnat, Edward,,
674 Pulsed and Pulsed Bias Sputtering: Principles and Applications
675 Pulsed And Pulsed Bias Sputtering: Principles And Applications
676 Pulsed And Pulsed Bias Sputtering: Principles And Applications
677 Pulsed And Pulsed Bias Sputtering: Principles And Applications Barnat Lu
678 Pulsed and Pulsed Bias Sputtering: Principles and Applications, Barnat, Lu-,
679 PURE TECH Chromium/Titanium Cr/Ti 20%, at% 44093.0/01/1 Sputtering Target
680 Pure Tech Sputtering Target – Al/Cu 4%, wt% – 2″ Dia – 1/4″ Thick – 99.99% Pure
681 Pure Tech Sputtering Target – Zinc – 2″ Dia – 1/8″ Thick – 99.995% Pure
682 PVD for Microelectronics: Sputter Desposition to Semiconductor Manufacturing:
683 Quantum Cleaned 4″ Glass For Viewport UHV Sputtering
684 Quartz sputtering target: SiO2 99.995%, 3.00″ diameter x 0.25″ thick
685 quartz substrate heaters for vacuum evaporator or sputtering systems
686 QUORUM EMITECH K550 FULLY AUTOMATIC SPUTTER COATER SPUTTERING SYSTEM
687 Quorum Sputter Coater Q150R-ES with Edwards RV5 Pump silver Target
688 Quorum Tech/Emitech K250 Sputter Coater System Controller
689 Quorum/Polaron SC7640 Auto/Manual High Resolution Sputter Coater
690 Race Motorsport rotary connecting rod 5zyl. s2 rs2 s4 s6 2,2 ADU 3b ADY RR aan
691 Race Motorsport Sputtering Big End Bearings 5Zyl. S2 RS2 S4 S6 2,2 Adu 3B Ady RR
692 RARE Disney Pixar The World of Cars Sputter Stop + Gasprin
693 RARE MISPRINT Disney Store CARS 2006 Doc Hudson Talking Car Sputtering Action
694 Rare Varian Sputtering Power Supply Kilowatt Meter Type VPW2871B2
695 Reactive Sputter Deposition by Diederik Depla
696 Reinforced BIG END BEARINGS Sputtering GLYCO VW 2,5L TDI LT28 T4 Transporter
697 Reinforced Connecting Rod Sputtering VAG 1,8T 20V Agu Aum Ajq Aeb ANB App Bam
698 Reinforced Motorsport rotary connecting Rod Bearings Glyco VW 16v g60 1,8t 2,0 T…
699 Reinforced Motorsport Sputtering Connecting Rod GLYCO VW 16V G60 1,8T 2,0 Turbo
700 Reinforced Rod Bearings magnetrons GLYCO VW 2,5l TDI lt28 t4 Transporter AXG ACV…
701 Reinforced Rod Bearings magnetrons VAG 1,8t 20v AGU AUM AJQ AEB ANB APP BAM BFV …
702 Research DYNAMO! 2″ RF sputtering thin film deposition system coater + 9 TARGETS
703 Rhenium sputtering target Re 99.95% 2″ diameter x 0.25″ thick: ACI ALLOYS
704 Riber Vacuum Pressure Gauge – Sputtering
705 RON HAWKINS (90’S) – SPIT SPUTTER SPARKLE CD
706 Rotary Connecting Rod & Main Bearing VW AUDI 16v g60 1,8l 1,8t 20v 2,0 PG 2e AEB
707 Rotary Connecting Rod & MAIN BEARINGS & THRUST WASHERS 16V G60 1,8T 2,0 PG 2E AE…
708 Rotary Connecting Rod Bearing kolbenschmidt BMW 4 Cylinder 2,0 2,0 D n47d20 116d…
709 Rotary Connecting Rod Bearing KS BMW 6 Cyl. N57D30 B57D30 Alpina 3er 5er X3 X4 X…
710 Rotary Connecting Rod Bearings Glyco BMW 4 Cyl. 6 Cyl. n47d20 n57d30
711 Rotary Connecting Rod Bearings Glyco BMW 4 Cylinder 2,0 D n47d20 116d 118d 120d …
712 Round 4” Sputtering Target Titanium Aluminum
713 Ruthenium (RU) Target Sputter 224μm
714 Ruthenium 99.9% pure SEM sputter target, 57mm diameter x 0.75mm thick
715 Ruthenium sputtering target Ru 99.95% 2″ diameter x 0.125″ thick: ACI ALLOYS
716 Ruthenium, Ru – Sputtering Target -99.95%
717 Ruthenium, Ru – Sputtering Target -99.95%
718 Samarium sputtering target, 99.9%, 2″ diameter x 0.25″ thick
719 Scandium sputter target: 4.00″ diameter x 0.125″ thick, 99.995% pure
720 Scandium sputtering target Sc 99.99% 2″ diameter x 0.125″ thick: ACI ALLOYS
721 Selenium sputtering target Se 99.999% 2″ diameter x 0.25″ thick: ACI ALLOYS
722 SEM Gold Au Sputtering Target: 99.99% Pure 57mm D x 0.1mm Thick Cutomizable
723 SEM Silver Ag Sputtering Target: 99.99% Pure,57mm D x 0.1mm Thick Customizab
724 SEM Sputter Coater PS3 Unit, Polaron PS100 Power Supply & Gold Carbon Applicator
725 Sencera In-line Sputter 6 target large panel DC power supply vacuum & Turbo pump
726 SHIBAURA Sputtering Machine Power Supply STELLA 200
727 Si sputtering target Silicon pure undoped (99.999%) 2″ diameter x 0.070″ thick
728 Silicon (N & P Types) Sputtering Targets, 3″ D x 0.125″ thick, 99.999% pure
729 Silicon alloy sputter target Si: 4.75 x 22.0″ x 0.25″
730 Silicon and carbon Sputtering Target, 3″ D x 0.250″ thick,
731 Silicon B-doped, 5N 18” x 3.5” x 0.250” Sputtering Target, Bonded Cu BP/I
732 Silicon Carbide N Type Sputtering Target, 3″ D x 0.125″ thick, 99.9% pure
733 Silicon Carbide N Type Sputtering Target, 3″ D x 0.25″ thick, 99.9% pure
734 Silicon Carbide N Type Sputtering Target, 3″ D x 0.375″ thick, 99.9% pure
735 Silicon Carbide Sputtering Target, 3″ D x 0.125″ thick, 99.5%
736 Silicon Carbide Sputtering Target, 3″ D x 0.125″ thick, 99.9% pure
737 Silicon Carbide Sputtering Target, 3″ D x 0.125″ thick, 99.9% pure
738 Silicon Carbide Sputtering Target, 3″ D x 0.25″ thick,
739 Silicon Carbide Sputtering Target, 3″ D x 0.25″ thick,
740 Silicon Carbide Sputtering Target, 3″ D x 0.255″ thick,
741 Silicon Carbide Sputtering Target, N 3″ D x 0.125″ thick, 99.5%-slightly chipped
742 Silicon Carbide, SiC, sputtering target, 3″ D x 0.250″ thick, N-Type
743 Silicon dioxide, SiO2 – Sputtering Target – 99.99% purity
744 Silicon Germanium Sputtering Target, 3.00″ D x 0.25″ thick, 99.999% pure
745 Silicon Germanium, SiGe sputtering targets, 3″ D x 0.125″ thick, 99.999% pure
746 Silicon Indium Zinc Oxide sputter target 99.9% 3″ dia x 0.2″ thick, bonded to Cu
747 Silicon Nitride Si3N4 sputtering target 99.5% 3″ diameter x 0.125″ thick
748 Silicon Nitride, Si3N4 – Sputtering Target
749 Silicon Nitride, Si3N4 sputtering target, 3″ D x 0.125″ thick, 99.9% pure
750 Silicon sputtering target Si 99.9999% 2″ diameter x 0.25″ thick: ACI ALLOYS
751 Silicon Sputtering Target, 2.950″ D x 0.125″ thick, 99.999% pure
752 Silicon Sputtering Target, 3″ D x 0.125″ thick, 99.999% pure
753 Silicon Sputtering Target, 3.00″ D x 0.25″ thick, 99.999% pure
754 Silicon, Si – Sputtering Target – 99.999% purity
755 Silve Target for MNT-JS1600 Plasma Sputtering Coater 50mm dia x 0.5mm (99.99%)
756 Silver SEM Sputter target: Ag 99.99% pure, 54mm diameter x 0.1mm thick
757 Silver SEM Sputter target: Ag 99.99% pure, 57mm diameter x 0.1mm thick
758 Silver SEM Sputter target: Ag 99.99% pure, 57mm diameter x 0.25mm thick
759 Silver, Ag – Sputtering Target – 99.999% & 99.99% purity
760 Singulus S-III / Skyline sputter cathode, PVD coating tool, 163 mm diam. target
761 Slotted Glass Chamber for Ladd Sputter Coater – 3.8″ Long x 2.9″ Diameter #4210
762 Small Aluminum Vacuum Chamber 18 by 10″ overall “Sputter Target”? Assembly
763 small desk type magnetron sputtering apparatus with controllable sputtering powe
764 SMC SPUTTER CHAMBER MTS32-P2168-40
765 Solar Applied Materials Aluminum Al Sputtering Targets 171mm X 15mm, 850 Grams
766 Solar Module inline sputteranlage Leybold OPTICS H3200 Coater sputtering
767 Solyndra 0141-30380, DC Gen 3-Target Intcon Cable 28FT for Sputtering System
768 Solyndra 0141-30549, 2 Splitter Cables to 4 each for PWR & TC Dist Sputtering HT
769 Spark Plug f3cs Bosch Motorsport 1,8t 16v Turbo s3 c20let s2 rs2 s4 vr6 Turbo
770 SPI Sputtering Coater Model 12121
771 SPI Sputtering Coater Model 12121 Sputter
772 SPI Supplies Module Controls Vacuum Base 11425 Sputter and Carbon Coater
773 Splatter Guard Microwave Hover Anti-Sputtering Vent Cover clear with magnets
774 Spring Handle Welding Chipping Hammer Weld Slag Buster Sputter
775 Sputter Cathode for Unaxis Twister CD Metalizer
776 Sputter Chamber 12″ Target, PVD, Wafer Processing, 943-2, 302401, Backing Plate
777 Sputter Chamber 12″ Target, PVD, Wafer Processing, 943-2, 302401, Backing Plate
778 SPUTTER COATER MOTORIZED ROTATIONAL STAGE
779 SPUTTER PIPE
780 Sputter Stop No. 92 Piston Cup 2013 Disney Pixar Cars 2 diecast Mattel VHTF!
781 SPUTTER STOP NO. 92, 1/55 SCALE, DISNEY PIXAR CARS, PISTON CUP
782 SPUTTER STOP No.92 – PISTON CUP – 15 of 18 – DISNEY PIXAR CARS
783 SPUTTER TABLE CHUCK SQT-0054 OSR24544
784 Sputter Target Aluminum for Singulus III Focus Cathode 3231001
785 Sputter target: Chromium/Nickel Cr/Ni 60/40 wt% 6.00″ dia x 0.25″ thk, 99.99%
786 Sputter target: Si3N4 99.5% pure, 1.0″ diameter x 0.125″ thick, bonded to copper
787 Sputter Vacuum Chamber Assembly 14″ 300mm with Industrial Devices CVC001 Drive
788 Sputtering Big End Bearings KOLBENSCHMIDT BMW 4 Cylinder 2,0 D N47D20 116D
789 Sputtering Big End Bearings Ks BMW 6 Cylinder N57D30 B57D30 Alpina 3er 5er X3 X4
790 SPUTTERING BY PARTICLE BOMBARDMENT I: PHYSICAL SPUTTERING By R. Behrisch
791 Sputtering by Particle Bombardment I: Physical Sputtering of Single-Element…
792 Sputtering by Particle Bombardment Ii: Sputtering of Alloys and Compounds, Elect
793 Sputtering By Particle Bombardment: Experiments And Computer Calculations F…
794 Sputtering by Particle Bombardment: Experiments and Computer Calculations f…
795 SPUTTERING EVAPORATION TARGET Co Cr Ta TANTALUM METAL
796 Sputtering Materials for VLSI and Thin Film Devices
797 Sputtering of Ammonite Spitoniceras with Pyrite and Cretaceous Symbircite 130mln
798 Sputtering Sheet Bonfire Sheet Heat Flameproof Bonfire Table La  Authentic
799 sputtering target Molybdenum (Mo) 99.9% 2″ diameter 0.02″ AA-16
800 sputtering target NiSi 2/1 at% 2″x.110
801 Sputtering Target Silicon Dioxide (SiO2) Diameter:3 inch Thick:0.5 inch:4 pcs
802 sputtering target Zn/Cu (50:50 at% 99.99%) 2″ diameter 0.1250″ AA-10
803 sputtering target ZnO/Cu2O (50:50 MOL% 99.95%) 2″ diameter 0.1250″ AA-11
804 sputtering target, Al 2″x.250″
805 Sputtering Target, AlCu 99/1 2″x.250″
806 Sputtering Target, AlMn 50/50 at% 2″x.125″
807 Sputtering Target, AlNd 97/3 wt% 2″x.250″
808 sputtering target, AlNd 98/2 wt% 2″x.250″
809 Sputtering Target, AlNi 22.3/77.7 wt% 2″x.200″
810 Sputtering Target, AlTi 96.5/3.5 wt% 2″x.125″
811 Sputtering Target, Aluminum (Al) 2″x.250″
812 sputtering target, BiIn 10/1 at% 2″x.150″
813 Sputtering Target, BiIn 4/1 at% 2″x5mm
814 sputtering target, Chromium (Cr) 2″x.250″
815 Sputtering Target, CoAl 1/1 at% 2″x.250″
816 Sputtering Target, CoFe 80/20 wt% 2″x.040″
817 Sputtering Target, CoFe 90/10 at% 2″x3mm
818 sputtering target, CoFe 95/5 at% 2″x.145″
819 Sputtering Target, CoFe 95/5 at% 2″x.145″
820 Sputtering Target, CoFeAl 2/1/1 2″x.125″
821 Sputtering Target, CoFeB 21/51/28 at% 2″x.125″
822 Sputtering Target, CoGd 95/5 wt% 2″x.175″
823 Sputtering Target, CoNi 20/80 at% 2″x.120″
824 Sputtering Target, CoNi 20/80 at% 2″x.150″
825 Sputtering Target, CoNi 55/45 2″x.240″
826 sputtering target, CoTi 1/1 at% 2″x.250″
827 sputtering target, CoTi 1/1 at% 2″x.250″
828 sputtering target, Cr 2″x.250″
829 sputtering target, FeAl 96.5/3.5 2″x.090
830 Sputtering Target, FeAl 96.5/3.5 2″x.090″
831 Sputtering Target, FeAl 96/4 at% 2″x.090″
832 Sputtering Target, FeAl 96/4 at% 2″x.090″
833 Sputtering Target, FeAl 97.5/2.5 2″x.090″
834 sputtering target, FeB 7/3 at% 2″x.125″
835 Sputtering Target, FeCo 65/35 at% 2″x.235″
836 Sputtering Target, FeMo 85/15 at% 2″x.120″
837 sputtering target, FeTb 30/70 wt% 2″x.120″
838 sputtering target, GeTe 1/1 at% 2″x.125″
839 sputtering target, MnGa 50/50 at% 2″x.125″
840 Sputtering Target, MoCr 85/15 at% 2″x.250″
841 Sputtering Target, NbTi 70/30 wt% 2″x.060″
842 Sputtering Target, Ni 2″x.125″
843 sputtering target, Ni/Ti 10/90 wt% 2″x.250″
844 sputtering target, NiFe 50/50 wt% 2″x.228″
845 Sputtering Target, NiFe 50/50 wt% 2″x.228″
846 Sputtering Target, NiFe 7/3 at% 2″x.125″
847 sputtering target, NiFe 79/21 at% 2″x.125″
848 Sputtering Target, NiFe 79/21 at% 2″x.125″
849 sputtering target, NiSi 2/1 at% 2″x.110″
850 sputtering target, NiTi 10/90 wt% 2″x.250
851 Sputtering Target, NiTi 10/90 wt% 2″x.250″
852 sputtering target, NiTi 25/75 wt% 2″x.250″
853 sputtering target, NiTi 25/75 wt% 2″x.250″
854 Sputtering target, NiTi 50/50 at% 2″x.170″
855 sputtering target, NiTi 50/50 at% 2″x.170″
856 Sputtering Target, NiTi 50/50 at% 2″x.170″
857 Sputtering target, Yttrium 2″x.063″
858 sputtering target, ZnAl 98/2 wt% 2″x.250″
859 STD 77218600 BMW M57 D30/25 M51 D25 M21 D25/24 SPUTTER big end con rod bearing
860 Steag FLT Unijet metalizer lid for sputter metalizer
861 Steel Connecting Rod GENUINE k1 + Connecting Rod Range 1,8t 20v s3 BAM AMK 144mm…
862 Steem-Up 3″ Steam Iron Cleaner Cleans Clogged Iron Stop Sputtering Lot 2
863 Strontium Ruthenate, SrRuO3 – Sputtering Target
864 Strontium Ruthenium Titanate – Sputtering Target – 99.9% purity
865 Sun Surface Technology Sputtering Platform  18 inch 15-293699-00
866 Ta2O5 99.9% pure sputter target, 90mm diameter x 12.5mm thick
867 Tantalum 99.95% sputter target, 60mm diam 5mm thick with step Sputtering target
868 Tantalum Pentoxide (Ta2O5) 99.9% Pure Sputter Target, 3″ Dia x 0.1875″ Thick
869 Tantalum pentoxide, Ta2O5 – Sputtering Target – 99.99% purity
870 Tantalum sputter target, Ta 99.95% pure, 1.5″ diameter x 0.25″ thick
871 Tantalum sputtering target 2.00″ diameter x 0.25″ thick- 99.95% pure Ta
872 Tantalum sputtering target 3.00″ diameter x 0.250″ thick- 99.95% pure
873 Tantalum sputtering target: 2.00″ diameter x 0.125″ thick- Ta 99.95%. ACI ALLOYS
874 Tantalum, Ta – Sputtering Target
875 Target Materials, Inc. Silicon Sputtering Target, 1.3″(dia)x0.125″(thick),99.999
876 Target Materials, Inc. Tin (Sn) Sputtering Target, 1″(dia)x0.25″(thick),99.999%
877 Target Sputtering Desiccant Beads
878 TARGET,TK8859, Gold sputter target-K575X Emitech Products 99.99
879 Technics Hummer HUM V Vent System Sputtering System SEM Sputter
880 Technics Hummer HUMMER Sputtering SEM Sputter PLATE ETCH SWITCH ASSEMBLY
881 TECHNICS HUMMER III SPUTTERING SYSTEM_AS-PICTURED_GREAT DEAL_FCFS
882 Technics Hummer Sputtering System High Voltage Process Control Unit
883 Technics Hummer V Sputtering System Sputter Coater AS-IS
884 Technics SSEM Sputtering Series 4, coater, Omron E5C4
885 TEL / MRC SPUTTER 150 MM DAMPING RING, CLEANED, P/N 500006
886 TEL / MRC SPUTTER 150 MM PART P/N 9000036
887 TEL Tokyo Electron D125181-150SP Shield CR Wafer Holder Sputter Coated
888 Tellurium Metal, Sputtering Target Pieces, 99.999% (Trace Metals Basis), 100g
889 Tellurium Metal, Sputtering Target Pieces, 99.999% (Trace Metals Basis), 10g
890 Tellurium sputter target, 3″x 1/8″ thick, 99.999%, bonded for Meivac gun
891 Tellurium sputtering target, 2″x 1/4″ thick, 99.999%
892 Temescal 0101-8572-2 Model FCS-3200 Fast-Cycle Load-Lock Sputter System Manual
893 Temescal 0101-8572-2 Model FCS-3200 FastCycle Load-Lock Sputtering System Manual
894 Temescal Airco SC-3200 Sputtering Controller
895 Temescal Airco SC-3200 Sputtering Controller
896 Temescal Model BJE2400 Automatic R-F Sputter ETCH System Manual
897 Terbium sputtering target: Tb 99.9% 2″ diameter x 0.25″ thick: ACI ALLOYS
898 Testbourne Ltd Nickel Ni Sputter Target 99.99% Pure 3.00″x 0.25″Thick
899 The item is listed as a Top Rated Plus item Top Rated Plus
900 The item is listed as a Top Rated Plus item Top Rated Plus
901 TiAL 33/67 0025487c – Sputtering Target – 99.7% purity 160 x 12 mm
902 Tin – Sputtering Target – 99.99% purity
903 Tin Oxide (SnO2)) Sputtering Target, 76.2mm dia x 4.5mm thick
904 Tin Oxide- Sputtering Target
905 Tin SEM Sputtering target: Sn 99.99% pure, 57mm diameter x 0.5mm thick
906 Tin sputtering target Sn 99.995% 2″ diameter x 0.25″ thick: ACI ALLOYS
907 Tin/Aluminum 93.5/6.5 wt% sputter target, 2.92″ dia x 5mm, on Angstrom backer
908 Tin/Titanium sputter target:1:4 atomic, 99.99%, 3.00″ diameter x 0.25″ thick
909 Titanium Boride sputter target TiB2 99.5%, 2.0″ diameter x 0.25″ thick
910 Titanium Nitride High-Purity Sputter target: TiN 99.9%, 3″ dia x 0.125″, bonded
911 Titanium Oxide- black, TiOx- Sputtering Target – 99.99% purity
912 Titanium Selenide, TiSe2- Sputtering Target
913 Titanium SEM Sputtering target: Ti 99.995% pure, 57mm diameter x 0.1mm thick
914 Titanium SEM Sputtering target: Ti 99.995% pure, 63mm diameter x 0.1mm thick
915 Titanium sputter target 1″ diam x 0.125″ thick (1.3″ or 1.5″ diam also in stock)
916 Titanium sputter target 99.995% pure, 3″ diameter x 0.25″ thick
917 Titanium sputter target: Perkin-Elmer 200mm Delta: Ti 99.995% pure, 0.25″ thick
918 Titanium sputtering target 99.995% pure, 3.0″ diameter x 0.125″ thick
919 Titanium Sputtering Target Dia 80mm (3.15″) Width 60mm (2.36″) Purity 99.9%
920 Titanium sputtering target Grade II 8.00″ dia. x 0.25″ thick w/ copper backplate
921 Titanium Sputtering Target, 99.995%, 250mm Diameter x 6mm Thickness, by Atomergi
922 Titanium Target for Sputtering – 2.00″ Diameter, 0.250″ Thick – Kurt J. Lesker
923 Titanium, 99.995%, 18” x 3.5” x 0.250” Sputtering Target
924 Titanium-Tungsten, TiW- Sputtering Target – 99.99% purity
925 Ti-tungsten sputtering target, W/Ti 90/10 wt%, 99.99% 3″ diameter x 0.25″ thick
926 Ti-tungsten sputtering target, W/Ti 90/10 wt%, 99.99% pure, 2″ dia x1/4″ thick
927 TMD 8104 7678 / 81047678, ZnO/AL2O3 2wt% sputtering target, planar target
928 TMI Target Materials Inc Zirconium Zr Sputter Target 2.990″ Dia. x 0.25 Thick
929 Tokyo Electron Limited / TEL Model: D124680-150 Sputter Shield
930 TORIBE Scissors Kitchen Sputter Scissors KS-203 Dishwasher OK Japan F/S
931 Toribe Scissors Kitchen Sputter Scissors Ks-203 Made In Japan
932 TORR SQM160-S-2-R Thin Film Deposition Monitor 2-Inputs, RS-232, 120/240VAC
933 Tosoh 3481P-74001-45000V Quantum Sputtering Target 34820-29-027-250 Cu10% Ti10%
934 TOSOH Sputter Disk – Al-1% Silicon-1% copper
935 TOSOH Sputtering Conmag Target. Cobalt 99.9%. 0832F-27-000-300 for Varian 3180
936 Tosoh Sputtering Target Chromium 6.74″ x 0.375″ — 6661E-24-000-280
937 TRUSCO SPUTTERING & ABRASION-RESISTANT SUPPORT HOSE (L0.5m/10×6.5mm) TRH-6505
938 TRUSCO SPUTTERING & ABRASION-RESISTANT SUPPORT HOSE (L0.5m/10×6.5mm) TRH-6505
939 TRUSCO SPUTTERING & ABRASION-RESISTANT SUPPORT HOSE (L0.5m/12.5×8.5mm) TRH-8505
940 TRUSCO SPUTTERING & ABRASION-RESISTANT SUPPORT HOSE (L0.5m/12.5×8.5mm) TRH-8505
941 TRUSCO SPUTTERING & ABRASION-RESISTANT SUPPORT HOSE (L1.0m/10×6.5mm) TRH-6510
942 TRUSCO SPUTTERING & ABRASION-RESISTANT SUPPORT HOSE (L1.0m/10×6.5mm) TRH-6510
943 TRUSCO Torasuko sputtering felt 2.8X1000X1m 28CF-11 28CF11 Regular Inport
944 Tungsten oxide WO3- Sputtering Target
945 Tungsten sputtering target W 99.95% 2″ diameter x 0.25″ thick: ACI ALLOYS
946 Tungsten, W – Sputtering Target – 99.95% purity
947 Turbo Molecular Pump for Inline sputteranlage Leybold OPTICS Coater sputtering
948 UHV Magnetron Sputtering System for Multilayer Film Deposition on Large Optics
949 Ultek Varian Sputter Ion Pump 010-402
950 Ultra Low Vacuum Pneumatic Actuated Valve Stainless 99B0649 Sputtering MKS
951 ULVAC PST-030AU Sputter ION PUMp
952 ULVAC PST-030AU Sputter ION PUMP
953 Umicore 0483078 Chromium 99.95% Sputtering Target AKQ515HEC Balzers BK209725-T
954 Umicore 0483428 Copper Cu 99.995% Sputtering Target AKQ515 Balzers BK209725-T
955 Umicore 0483484 NIFe 45.5 Sputtering Target 16×6 Balzers AKQ515
956 Umicore 0483484 NiFe45.5 99.9% Sputtering Target AKQ515 Balzers BK221845-T
957 Umicore 0483591 NiFe18 99.9% Sputtering Target AKQ515 Balzers BK205602-T
958 Umicore AKQ515 Planar Magnetron Sputtering Target Kit NiFe45.5 wt%
959 Umicore BD483075-T TITANIUM 99.9% Sputtering Target AKQ515 Balzers BK205602-T
960 Umicore Nb 3N5 Target AK525 Sputtering Target CSBP-Cu-AK525 Material 3000101119
961 Umicore Sputtering Target Silicone Si 99.9999% ARQ931 0704788
962 Umicore Titanium 0483429 Sputtering Target 16×6 Balzers AKQ515
963 Unaxis / Balzers ARQ900 Sputter Cathode
964 Unaxis / BPS Innenmaske 102050247 Sputter Mask
965 Unaxis ARQ131 silicone sputter target
966 Unaxis Indigo BD Sputter mask
967 UV Tech Material 6″ Sputtering Target Aluminum Type M2T5 6″ X 1 1/4″ thick
968 Vacuum Evaporator System Sputter Deposition Gun RF Plasma Brooks Cryo-Torr
969 Vanadium SEM Sputter target: V 99.95% pure, 57mm diameter x 0.2mm thick
970 Vanadium SEM Sputter target: V 99.95% pure, 63mm diameter x 0.2mm thick
971 Vanadium SEM Sputtering target: V 99.8% pure, 57mm diameter x 0.1mm thick
972 Vanadium sputtering target V 99.9% 2″ diameter x 0.25″ thick: ACI ALLOYS
973 Vanadium, V – Sputtering Target – 99.9% purity
974 VARIAN / L6427-301 / SPUTTER ION GAUGE BOARD
975 VARIAN / L6427-301 / SPUTTER ION GAUGE BOARD
976 VARIAN / VPW2871C2 / ARC COUNTER-3GUN, SPUTTERING POWER SUPPLY
977 Varian 00-664166-00 Insulator, Cathode for 3180 Sputtering
978 Varian 00-674163-00 Anode Cap for 3180 Sputtering
979 Varian 00-674163-00 Anode Cap for 3180 Sputtering
980 Varian 00-682216-00 Ceramic Clip Ring, 6″ for Varian Sputtering
981 Varian 00-684748-00 Shield, Heater, 5″ for Varian Sputtering
982 Varian 04-715634-01 Sputtering Power Supply Kilowatt Meter, VPW2871B2
983 Varian 04-715634-01 Sputtering Power Supply Kilowatt Meter, VPW2871B2
984 Varian 04-715634-01 Sputtering Power Supply Kilowatt Meter, VPW2871B2
985 Varian Anode Cover 00-664198-01 for 3180 Sputtering
986 Varian Heator Insulator, 4″ Etch Ring 00-684270-00 for 3180 Sputtering
987 Varian Ion Pump 911-5032 High Vacuum 4.50 Conflat sputtering Getter Pump
988 Varian MULTI-RANGE DC SPUTTERING POWER SUPPLY
989 VARIAN MULTI-RANGE DC SPUTTERING POWER SUPPLY VPW2870P5-01-M,BB-95359685
990 Varian Multi-Range DC Sputtering Power Supply VPW2870P5-M, TFS 04-716797
991 VARIAN MULTI-RANGE DC SPUTTERING POWER SUPPLY VPW2870P5-M, VPW2870P5-S, SET
992 VARIAN MULTI-RANGE DC SPUTTERING POWER SUPPLY VPW2870P5-S
993 Varian Multi-Range DC Sputtering Power Supply VPW2870P5-S, TFS 04-716797
994 Varian Semiconductor Heat Shield 6″ 0471216501 E06829 F/P Bore 3290 Sputter
995 Varian Shiled HTR 00-684725-00 for 3180 Sputtering
996 varian sputter gun hv power cable 780781-04 s-gun uhv vacuum pvd thin film
997 Varian Sputtering Power Supply
998 Varian Sputtering Power Supply Arc Counter 3 Gun VPW2871C2 04-718808-05 ++
999 Varian Sputtering Power Supply Combiner Module VPW2871A1 04-70586-01 ++
1000 VARIAN V30T 911-5032 TRIODE SPUTTER MOLECULLAR ION PUMP w/ ACCESSORIES
1001 Varian Vacuum Chamber For Sputter Coating 26″ Length x 20″ Wide
1002 VARIAN-EATON 04-716579 Sputter Titanium 4N5 CCHD0 Varian Quantam XL TI00-169-4N5
1003 veeco spector iontech HBDG ion assist ion beam sputtering system IBAD thin film
1004 Veeco Sputtering System Part 0333-295-00 Rev. C
1005 VEM-CO Silicon Sputtering Target Si Poly Boron Doped, 99.999% 300x6mm 12″
1006 Vent System Sputtering System Technics Hummer V + Mitsubishi motor
1007 Von Ardenne Sputter, 2 Cluster Tool – Model CF 850S, Turbo pump, Brooks Robot
1008 West Coast Quartz 91-00507A SHIELD QUARTZ 200mm AMAT MXP Sputter ETCH
1009 William Advanced Materials Cr/Ti 10%, at% STK5140.0/01/1 Sputtering Target
1010 William Advanced Materials Cr/Ti 10%, at% STK5195.0/01/1 Sputtering Target
1011 William Advanced Materials Cr/Ti 10%, at% STK5261.0/01/1 Sputtering Target
1012 William Advanced Materials Ni/Cr 22A 22%, at% 100533444-1 Sputtering Target
1013 William Advanced Materials Ni/Cr 36%/Fe 13% at% STK4168.0/01/1 Sputtering Target
1014 William Advanced Materials Thin Film Products Cr 04-29764/01A Sputtering Target
1015 Williams Advanced Mat Nobium/Nickel Nb/Ni 40%, at% 05-33802/01 Sputtering Target
1016 Williams Advanced Materials Chromium 04-29764/01A Sputtering Target
1017 Williams Advanced Materials Chromium 05-32937/01 Sputtering Target
1018 Williams Advanced Materials Co/Ni 25% 47289.0/01/1 Sputtering Target
1019 WILLIAMS ADVANCED MATERIALS Cr/Ti 10%, at% SPUTTERING TARGET STK6728.0/01/1
1020 WILLIAMS ADVANCED MATERIALS Cr/Ti 20%, at% SPUTTERING TARGET 47340.1/01/1
1021 Williams Advanced Materials Stainless Steel 304 Sputter Target
1022 Williams Advanced Materials Thin Film Products Sputtering Traget 03069440000
1023 Williams Sputter Sputtering Target Silicon B-doped WAM TFP Dwg 01017-005-E
1024 Williams Sputter Sputtering Target ZnS/SiO(2) 20% at% 200mm dia X 6.35mm
1025 Ytterbium sputter target 99.9% pure (Y/TREM), 3.00″ diameter x 0.25″ thick
1026 Ytterbium sputtering target Yb 99.9% 2″ diameter x 0.125″ thick: ACI ALLOYS
1027 Yttria-Doped Alumina sputter target, Al2O3/Y2O3, 99.99%, 2″ diam x1/8″ thk
1028 Yttrium SEM Sputter target: Y 99.9% pure, 57mm diameter x 0.5mm thick
1029 Yttrium sputter target Y 99.9% 2″ diameter x 2mm thick
1030 Yttrium sputter target Y 99.9% 3″ diameter x 0.125″ thick
1031 Yttrium sputtering target, 99.9% Y/TREM, 2.00″ diameter x 0.25″ thick
1032 Zinc Aluminum (98:2 wt%) ZnAl – Sputtering Target – 99.99% purity
1033 Zinc Oxide – ZnO – Sputtering Target 99.999% & 99.99% purity
1034 Zinc Oxide, ZnO Sputtering Target MAK4 configuration -99.999%
1035 Zinc SEM Sputtering target: Zn 99% pure, 57mm diameter x 0.5mm thick
1036 Zinc SEM Sputtering target: Zn 99.99% pure, 63mm diameter x 1mm thick
1037 Zinc sputtering target- 1.00″ diameter x 0.25″ thick, 99.99% pure
1038 Zinc sputtering target- 99.99% pure, 2″ diameter x 0.25″ thick
1039 Zinc Sulfide, ZnS – Sputtering Target – 99.99% purity
1040 Zinc, Zn – Sputtering Target – 99.99% purity
1041 Zinc/Bismuth 90/10 wt% sputter target, 2.92″ dia x 0.2″, on Angstrom style back
1042 Zirconia- Yttria stabilized, ZrO2/Y2O3 – Sputtering Target – 99.9% purity
1043 Zirconium Copper Aluminum Nickel sputtering target Zr/Cu/Al/Ni 60/25/10/5
1044 Zirconium SEM Sputtering target: Zr 99.2% pure, 57mm diameter x 0.25mm thick
1045 Zirconium sputtering target Zr 99.9% 2″ diameter x 0.25″ thick: ACI ALLOYS
1046 Zirconium yttrium sputtering target Zr/Y 80/20 wt% 2″ diameter x 0.125″ thick
1047 Zirconium Zr Sputtering Targets – 2.00″ Diameter, 0.250″ Thick – Kurt J. Lesker
1048 Zirconium, Zr – Sputtering Target
1049 ZnO/MgO (80:20 wt%) – Sputtering Target – 99.99% purity

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