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GSI UltraDep 1 PECVD

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Description

GSI UltraDep 1 PECVD :

  • Equipment Make: GSI
  • Equipment Model: UltraDep 1
  • Type: PECVD
  • Wafer Size: 4″, 6″
  • TEOS silicon oxide: normal & low stress
  • Silicon oxide
  • Silicon nitride: stoichiometric & low stress
  • Amorphous silicon: doped and undoped
  • Oxynitrides: 1.46 – 2.0 refractive index range
  • TEOS Oxide
  • PSG,BSG, and BPSG

Condition: Used. We sell it at AS IS .

Valid : It is only for end users and is subject to prior sale without notice. Appreciate your time!

Info on the system from the owner for your reference.

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