Main Maker

Plasma Etch System

  • Substrate Size: up to 8 inch
  • Vacuum 10-7 torr range base pressure
  • Thickness uniformity : ±5%
  • Substrate temperature from -20 °C to 300 °C
  • RIE plasma etcher
  • ICP-RIE plasma etcher
  • Full auto control with touch screen display


Plasma Etch System Applications
  • Basic plasma research
  • Photoresist Ashing
  • III-V compound semiconducts (GaAsn,InP,GaN)
  • Si, SiO2, SiNx

Plasma Etch System Options

  • High vacuum pumping system
  • OES or RGA systems.
  • Load-Lock System(single substrate, cassette-to-cassette)
  • Cluster able for vacuum transfer of substrates

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