Model: System One Etcher Matrix 302 Plasma Etcher semiconductor process equipment
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Original Equipment Manufacturer: Matrix Integrated Systems, Inc
Condition: AS IS,Where Is (Refurbished by seller is optional with warranty, installation and service if necessary)
Wafer Size: 6 inch configuration.
Valid Time: Subject to prior sale without notice
Lead Time: Ready to go.
Location: Silicon Valley, CA, U.S.A.
System One Etcher Matrix 302 plasma etcher (dry etcher) semiconductor process equipment General Description (Reference only)
1.1 Matrix 302 dry etcher General Description
The System One Etcher Matrix 302 is an electro-mechanical production system used to etch materials such as nitride, oxide, polysilicon,etc. from the surface of silicon or other substrates. Each wafer is processed individually by means of a chemical reaction induced by a gas plasma. The system consists of the following major assemblies:
1.1.1 Matrix 302 dry etching Main console
Operator Interface Module
Wafer Transport Module
Card Reader Module
Microprocessor Control Module
1.1.2 Matrix 302 plasma etching Power Supply Console
Gas Distribution Panel
1.1.3 Matrix 302 plasma etch vacuum Pump (Optional)
Vacuum Hose and Connectors
1.2 Matrix 302 plasma etcher Features
The Matrix 302 offers the following features:
* SINGLE WAFER PROCESSING
* WAFER CAPABILITY: 4 11 (100 mm), 5 11 (125 mm) and 6 11 (150 mm)
* CASSETTE HANDLING
* WAFER HANDLING: Robotic pick and place
* MICROPROCESSOR CONTROLLED
* MONOCHROMATOR FOR ENDPOINT DETECTION (Standard)
* TEMPERATURE CONTROL: Provides temperatures of up to 160°C for process stability
* DOT MATRIX PLASMA DISPLAY SCREEN
* MODULAR DESIGN
* PROGRAMMABLE DIAGNOSTICS
* PHASE MAGNITUDE TUNER
* BUTTERFLY-TYPE PRESSURE CONTROLLER
* PINS UP/DOWN TO HEAT WAFER
* MULTI-STEP PROCESSING
1.3 Matrix 302 semiconductor process equipment Principles of Operation
The system is process driven by user friendly commands or by the insertion of a programmed magnetic card. It functions in the following sequence:
1.3.1 Matrix 302 Loading Transport
One wafer at a time is robotically picked from a cassette, transported to and deposited in the reaction chamber. The chamber door closes and the chamber is automatically sealed from the atmosphere.
1.3.2 System One Etcher Matrix 302 Process
Through a series of microprocessor controlled operating steps, the wafer is processed, i.e., the desired material is etched. The processing steps include the following:
a) The chamber is evacuated to a preset pressure.
b) Gas flow to the chamber is initiated at a predetermined and process-selected controlled rate, and a process selected pressure is maintained.
c) A gas plasma is produced by exposing the appropriate gases to radio frequency energy from a generator operating at a frequency of 13.56 MHz.
d) The gas plasma reacts with the material to be etched to form gaseous byproducts. These byproducts are then removed from the chamber by the vacuum pump.
e) A monochromator is used to monitor the plasma and determine the process endpoint. Either monochromator or timed endpoint can be used.
1.3.3 System One Etcher Matrix 302 Process Deactivation
When the processing of the wafer is completed, the power and gas flow are stopped. Nitrogen is then used to restore the chamber to atmospheric pressure.
1.3.4 System One Etcher Matrix 302 Unloading Transport
The wafer is robotically returned to its original position and orientation in the cassette. Subsequent wafers are similarly selected, transported, processed and returned to the cassette.
1.4 System One Etcher Matrix 302 Physical Specifications
|Main Console||Power Supply Console||overall|
|WEIGHT||100 lbs||310 lbs||410 lbs|
All the Matrix 302 Plasma etcher semiconductor process equipment trademarks belongs to Matrix Integrated Systems, Inc, the original equipment manufacturer. All rights reserved.