Description
Equipment Model: AG Associates Heatpulse 610 Rapid Thermal Processing equipment
Maker: AG Associates
Condition: Used,Good condition,Refurbished by Enginneering Solutions. No Quartz Tube and Tray (Option Extra Cost, New). We sell it at AS IS,WHERE IS
Price: Contact Us by filling the bottom form. Appreciate your time.
Quantity: 2 sets
Valid Time: Subject to prior sale without notice
Others: Refurbished, Installation, Training,Warranty are optional at extra charge.
Description of the original equipment for your reference only.
AG Associates Heatpulse 610 Rapid Thermal Processing equipment description for your reference only.
AG ASSOCIATES HEATPULSE 610 RAPID THERMAL PROCESSOR
Features and Applications
Manually loaded and capable of processing silicon and III-V substrates up to 150mm in diameter, Heatpulse 610 provides solutions to your process development and monitoring needs. Equipped with a graphical user interface to improve operator productivity, Heatpulse 610 offers recipe management and system diagnostics.
Major System Features
- Semiconductor grade quartz process chamber
- 21 tungsten halogen lamps in an upper and lower array
- Extended Range Pyrometer: 400°C -1300oC (200°C w/TC)
- Graphical User Interface(GUI)
- Rebuilt to OEM specs- will look like new system
These capabilities, combined with the heating chamber’s cold-wall design and
superior heating uniformity, provide significant advantages over conventional
furnace processing.
Key Features Include
- Closed-loop temperature control with pyrometer or thermocouple temperature sensing.
- Precise time-temperature profiles tailored to suit specific process requirements.
- Fast heating and cooling rates unobtainable in conventional technologies.
- Consistent wafer-to-wafer process cycle repeatability.
- Elimination of external contamination.
- Small footprint and energy efficiency.
Performance Specifications
- Recommended Steady State Temperature Range: 400-1250° C.
- Steady-State Temperature Stability: ± 2° C.
- Temperature Monitoring Mechanisms: Extended Range Pyrometer (ERP), used throughout the recommended temperature range, or a thermocouple, used for process temperatures below 400° C.
- Heating Rate: 1-200° C per second, user-controllable.
- Cooling Rate: Temperature dependent; max 150° C per second.
- Maximum Non-uniformity:
- ±5°C across a 6″ (150mm) wafer at 1150°C. (This is a one sigma deviation 100 angstrom oxide.) For a titanium silicidation process, no more than 4% increase in non-uniformity during the first anneal at 650°C to 700 °C.
- Post-anneal sheet resistivity measured on a 150mm wafer annealed at 1100° C for 10 seconds. R&D models optimized for slip control.
- Implant: As 1E16 50 KeV with implant uniformity ≤0.3%
- Lamp Life: Unconditionally guaranteed for three years.
- Steady State Time: 1-9999 sec. (1-600 sec. recommended)
- Wafer Sizes for the HEATPULSE 610: 2″, 3″, 4″, 5″ and 6″.
- Process Gases: The HEATPULSE system delivers one non-corrosive process gas with manually controlled flow. Optional MFC, Up to 4.
- GUI software Standard , upgrade to P-CAT
- 16 bit A/D
Process |
Role of RTP |
| Anneal Oxidation | Form a uniform layer of silicon dioxide to insulate a circuit element |
| Silicidation | Decrease the resistivity of tungsten silicide or titanium silicide caps on polycrystalline device gates |
| Nitridization | Form a silicon nitride layer for insulation, protection against oxidation, or anti-reflective coatings |
| BSPG Reflow | Improve the surface characteristics such as uniformity for boron phosphorous spin on glass (BPSG). Also called densification |
| Ion Activation | Cause implanted ions such as arsenic and boron to integrate into the silicon crystal lattice to improve surface conductivity |
| Platinum Sintering | Form a thermionic bond between platinum and silicon to increase the current-carrying capability of a circuit |
| Salicidation | Self-aligning Silicidation. Increase the conductivity of refractory metal silicides used to connect gate material to metallic vias. Similar to Silicidation |
Research wafer trays available for either Si or GaAs in 2″, 3″, 4″, 5″ and 6”
sizes; GaAs Susceptors; and Slip-Free Rings.“>KEYWORDS:Rapid Thermal Process, Modular Process Technology, Rapid Thermal Processing, Rapid Thermal Anneal, Rapid Thermal Annealing, Rapid Thermal Oxidation, Rapid Thermal Nitride, RTA, RTP, RTO, RTN,, Semiconductor Equipment, Used Semiconductor Equipment, Semiconductor Process Equipment, AG210, AG310, AG 410, AG610, AG 610I, AG Associates, Heatpulse 210, Heatpulse 410, Minipulse 310, Heatpulse 610, Heatpulse 610I, AG Heatpulse 410, AG Heatpulse 610, AG Heatpulse 210, AG Minipulse 310, 4100 , 4100S 4108, 8108 ,Atmospheric Rapid Thermal Process, Vacuum Rapid Thermal Process, Furnace, Oven, Thermal Furnace, Thermal Process, Thermal Processing,JIPELEC, ag2146,JetClip,JetStar, AST SHS2000, AST STEAG 2800, ssintegration, Rapid Thermal Oxide,JetFirst ,Mattson, annealsys, heatpulse ,ag 2146,Koyo Thermo Systems,AST STEAG-MATTSON 2800, STEAG-MATTSON 2900, STEAG-MATTSON 3000, heat pulse, Solaris, Eclipse ,modularpro, RLA-1000, AG Heatpulse, rapid thermal processor, Steag AST SHS2000, Solaris 75, Solaris75,STEAG Electronic Systems ,eng-sol, Annealsys, RLA-3000, Engineering Solutions ，Solaris 150, Rapid Thermal Annealer , AS-Master ,modularpro,RTO ,Modular Process Technology, Solaris150,AS-One,AS-Micro, ADDAX, JetFirst, JetLight, JetStar, MPT-600S,MPT-800S, MPT-600XP, MPT-800XP, MPT-3000, Jipelec Jetfirst 150,Jipelec Jetfirst 200, JETFIRST 100,AnnealSys AS-One, RTP-3000, ULVAC, Ulvac Technology MILA 3000 ,Rapid Thermal Annealing, ULVAC RTA-2000,ULVAC RTA-4000,ULVAC RTA-6000,ULVAC RTA-8000,ULVAC RTA-12000, EasyTube® 3000EXT, CVD Equipment Corporation, Dr. Eberl MBE-Komponenten GmbH, AO 600,Rapid Thermal Annealing System,MBE Components,MBE Systems,OCTOPLUS 300,OCTOPLUS 400,OCTOPLUS 500,OCTOPLUS 500 EBV,OCTOPLUS 600,OCTOPLUS 600 EBV,OCTOPLUS-O 400,Thin Film Systems,Organic Deposition System,Rapid Thermal Annealing,MBE Components,Thin Film / CIGS / CZTS / CdTe,ECM, Annealsys AS-Premium, Annealsys Zenith-100, Annealsys AS-One, Annealsys AS-Master, Jipelec JetStar, Annealsys AS-Micro, Jipelec JetLight, Jipelec JetFirst 100, Jipelec JetFirst 200, Jipelec JetFirst 300, CreaTec Fischer & Co. GmbH, Rapid Thermal Anneling System, Mini MBE System,Growth System, Research Linear Transfer System,RTA System,UHV Shuttle System, SemiTEq JSC, Molecular-Beam Epitaxy Systems (MBE),PVD Systems,RTP & RTA Systems,ICP/RIE/PECVD Systems,Components and accessories, STE RTP150, STE RTA100, STE ICP200 , ADVANCE RIKO, Inc., RTP-mini, Atmospheric Thermoelectric Module Evaluation System F-PEM,Mini Lamp Annealer MILA-5050,infrared lamp heating system, ULTECH CO.LTD,Real RTP-100,Real RTP-100,Real RTP-150,Real RTP-Mini,SPUTTER,DRY ETCHER,PECVD,ALD,E beam evaporator,Thermal Evaporator, SJ High Technology ,Tube RTA,R-8160,drawer type RTA, R-401, Dai-ichi Kiden Co.,Ltd., Combustion furnace,High vacuum heating system,Vertical high temperature heating system,Induction heating system(elevating),Ultra high temperature heating system, Koyo Thermo Systems Co.,Ltd., Premtek Technology Co， 技鼎股份有限公司，技鼎股份有限公司，VF-5900 300mm Large Batch,VF-5700 300mm Mini Batch,VF-5300,8 inch,Large Batch,VF-5100,8 inch,Wide-Range Batch,VF-3000,8 inch,Low-Cost Mini Batch,VF-1000,Small Production and R&D,VFS-4000,Large Bore Vertical Furnace,Koyo Thermo Systems Co.,Ltd.,Model 200 Series Horizontal Furnaces for Mass Production and Experiments,Model 206A Horizontal Furnace for PV Production ,Model 206A Horizontal Furnace for PV ,Production,RLA-3100 Lamp Annealing System for Rapid Thermal Processing,RLA-1200 Lamp Annealing System for Rapid Thermal Processing,RLA-1200 Lamp Annealing System for Rapid Thermal Processing,SO2-12-F Heated-air Circulating Type Clean Oven for 300-mm Wafers,CLH Series High-Temperature Clean Ovens,CLH Series High-Temperature Clean Ovens,VFS-4000 Large Bore Vertical Furnace,VF-5300HLP Activation Annealing Furnace,VF-5300H Vertical Furnace for Gate Insulating Film Formation,VF-5300H Vertical Furnace for Gate Insulating Film Formation,RLA-4106-V Lamp Annealing System for Contact Annealing,RLA-4106-V Lamp Annealing System for Contact Annealing,VF-3000HLP Activation Annealing Furnace, VF-3000HLP Activation Annealing Furnace,VF-3000H Vertical Furnace for Gate Insulating Film Formation,VF-3000H Vertical Furnace for Gate Insulating Film Formation,RLA-3100-V Lamp Annealing System for Contact Annealing,RLA-3100-V Lamp Annealing System for Contact Annealing,Rapid temperature rise annealing furnace RTP_Table ，RTP_Table type rapid temperature rise annealing furnace，Rapid temperature rise annealing furnace RTP_SA ，RTP ，semi-automatic rapid temperature rise annealing furnace，Rapid temperature rise annealing furnace ，RTP_Auto ，automatic rapid temperature rise annealing furnace，RTP600V，RTP600Z，RTP500Z，RTP500V，RTP500SV，快速退火炉，北京东之星应用物理研究所，快速升溫退火爐，estarlabs，Glovebox+PVD,2D material CVD,LPCVD & Furnace,Vacuum Sintering Furnace,RTP,Plasma Doping (PDS),ASHER,Wet bench,Crystal Si solarcell
