Description
Refurbished STS / SPTS Multiplex ICP Etcher for SiO2, Quartz, Pyrex and Dielectric Etch
SemiStar Corp. offers a refurbished STS / SPTS Multiplex ICP Etcher based on current inventory and original equipment configuration. This system is configured for 100 mm wafer processing and is suitable for SiO2, quartz, Pyrex, fused silica, Si3N4, and silicon etch applications.
The available system has been converted to 100 mm processing with ceramic parts replacing the original quartz parts. It is equipped with a 3000 W, 13.56 MHz Advanced Energy ICP coil RF power supply, 1000 W, 13.56 MHz ENI platen RF power supply, backside helium cooling, and a standard 8-pin wafer clamp with lip seal.
The configured process gas capability includes C4F8, SF6, O2, H2, and CF4, with two additional open gas slots. The system supports fluorine-based plasma etch processes for oxide, glass, dielectric, and silicon applications where the customer’s process requirements match the installed hardware configuration.
Refurbished systems are supplied based on current inventory and original equipment configuration. Installation, startup assistance, and warranty may be available depending on system condition, final configuration, and project scope.
Photo shown is for reference only. Actual system appearance and configuration may vary.
Available System Configuration
| Item | Configuration |
|---|---|
| System | STS / SPTS Multiplex ICP Etcher |
| Wafer Size | 100 mm |
| 100 mm Conversion | Converted to 100 mm with ceramic parts replacing original quartz parts |
| Etch Materials | SiO2, quartz, Pyrex, fused silica, Si3N4, bulk silicon |
| Mask Materials | Si, photoresist (PR), metals including Cr, Ti, and Ni |
| Process Gases | C4F8, SF6, O2, H2, CF4, plus two open gas slots |
| Process Pressure | 2–80 mTorr |
| ICP Coil Power | 3000 W, 13.56 MHz, Advanced Energy |
| Platen RF Power | 1000 W, 13.56 MHz, ENI |
| Wafer Cooling | Backside helium cooling |
| Wafer Clamp | Standard 8-pin clamp with lip seal |
| Platen Temperature | -20°C to 120°C |
| Wall Temperature | 100°C |
| Lid Temperature | 120°C |
Process Performance
2.5 µm Isolated Trenches on 8–10 µm TEOS
| Parameter | Performance |
|---|---|
| Feature | 2.5 µm isolated trenches |
| Film | 8–10 µm TEOS |
| SiO2 Etch Rate | >2,000 Å/min |
| SiO2 : PR Selectivity | >4:1 |
| Etch Rate Variability | Intra-wafer and inter-wafer ±3% |
| Sidewall Angle | 85–90° |
5 µm Features on 3–10 µm SiO2
| Parameter | Performance |
|---|---|
| Feature | 5 µm features |
| Film | 3–10 µm SiO2 |
| SiO2 Etch Rate | >3,000 Å/min |
| SiO2 : PR Selectivity | >7.5:1 |
| Etch Rate Variability | Intra-wafer and inter-wafer ±2% |
| Sidewall Angle | 89–90° |
Typical Applications
- Deep SiO2 etch
- TEOS oxide etch
- Quartz etch
- Fused silica etch
- Pyrex glass etch
- Si3N4 dielectric etch
- Bulk silicon etch
- High aspect ratio dielectric structures
- MEMS fabrication
- Optical and photonic device fabrication
- University, institute, and semiconductor R&D applications
Process and Application Notes
This STS / SPTS Multiplex ICP configuration is particularly suited for oxide, glass, and dielectric etch applications. The combination of high-density 3000 W ICP coil power and independent 1000 W platen RF power provides separate control of plasma density and ion bombardment for high-rate anisotropic etching.
The installed C4F8, SF6, O2, H2, and CF4 gas capability supports a range of fluorine- and fluorocarbon-based plasma processes. Two additional open gas slots provide flexibility for process development where compatible with the existing gas delivery system and facility requirements.
Available process information includes greater than 2,000 Å/min SiO2 etch rate for 2.5 µm isolated trenches on 8–10 µm TEOS, and greater than 3,000 Å/min SiO2 etch rate for 5 µm features on 3–10 µm SiO2. These results are associated with specific process conditions and should not be interpreted as guaranteed performance for every wafer, film, mask, or recipe.
Because STS / SPTS Multiplex systems were manufactured with application-specific configurations, final suitability should be reviewed based on wafer size, substrate material, film composition and thickness, mask material, feature size, target etch depth, sidewall requirement, selectivity, process gases, and facility requirements.
Related STS / SPTS Inventory
SemiStar may also have other STS / SPTS Multiplex plasma etch systems available, including Bosch Process DRIE, ICP RIE, MEMS-CMOS, dielectric etch, and M/PLEX metal etch configurations. Please contact SemiStar for current inventory and configuration details.
Important Notes
- Refurbished equipment availability is subject to prior sale.
- Refurbished systems are supplied based on current inventory and original equipment configuration.
- Published process results are reference performance associated with specific process conditions and are not guaranteed for other applications or recipes.
- Actual configuration, process capability, installation scope, warranty, and delivery schedule must be confirmed by quotation.
- SemiStar does not provide spare parts or service support for STS systems not sold by SemiStar.
- All OEM names, trademarks, and model names belong to their respective owners.
- All website information is for reference only and is not a purchase specification. Final configuration, scope, price, and terms are based on SemiStar’s official quotation.
Request a Quote for STS / SPTS ICP Etcher
Please contact SemiStar with your target application and required configuration. Helpful information includes wafer size, substrate type, material to be etched, film thickness, feature size, target etch depth, mask material, required selectivity, sidewall profile, process gases, facility limitations, budget, and expected purchase timeline.
