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2” Free-Standing GaN Substrate ( Gallium nitride )

Gallium Nitride application in LED

LED(Light-Emitting diode)has series of advantages such as high illumination efficiency, full color, energy conservation, long service life, quick response speed, small size, solid light source, cold light source(without heat),friendly to environment, easily motivated, etc; which can be widely used in display of various signals and graphics. Recently, quantities of breakthrough and progress of LED have been achieved on GaN-based materials, i.e. high efficiency blue and white LED has been made out not only to realize large-screen full color display, but also to replace the incandescent lamp and fluorescent lamp, thus can totally change our lives.

Gallium Nitride application in LED:    All color FPD: LCD backlight, LED monitor. 😆

We are a high-tech company devoting to developing technologies to fabricate high-quality nitride semiconductor materials. Our key advantage is unrivaled materials expertise, and owns essential patents in GaN substrate and growth technologies. We offer standard and customized 2 inch GaN Substrate  and GaN/sapphire templates with extra low dislocations densities,which are suitable for applications in high-power LED, blue and green LD, HEMTs, high-power electronic/electric devices.

Our mission is bringing key values to the related industries, such as full color display, semiconductor lighting, communication, and renewable energy, and being a pioneer in the industry applications of nitride semiconductors.

Gallium nitride (GaN) is a binary III/V direct bandgap semiconductor commonly used in bright light-emitting diodes since the 1990s. The compound is a very hard material that has a Wurtzite crystal structure. Its wide band gap of 3.4 eV affords it special properties for applications in optoelectronic, high-power and high-frequency devices. For example, GaN is the substrate which makes violet (405 nm) laser diodes possible, without use of nonlinear optical frequency-doubling.

Its sensitivity to ionizing radiation is low (like other group III nitrides), making it a suitable material for solar cell arrays for satellites. Military and space applications could also benefit as devices have shown stability in radiation environments. Because GaN transistors can operate at much higher temperatures and work at much higher voltages than gallium arsenide (GaAs) transistors, they make ideal power amplifiers at microwave frequencies.

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