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Float Zone Si Wafers 2-6 inch

Float Zone Si Wafers 2-6 inch,   Items sold in quantities of 25, unless noted. Please email us to check the availability , price and  lead time etc.

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Float Zone Si Wafers (2 to 6 inch Si wafers)

Note: Items sold in quantities of 25, unless noted. Please email us to check the availability , price and  lead time etc.

Item Material Orient. Diam Thck Surf. Resistivity Comment
(mm) (μm) Ωcm
1 n–type Si:P [100] 6″ 400 ±10 P/P FZ >2,000 SEMI Prime, 1 JEIDA Flat, Empak cst
2 n–type Si:P [100] 6″ 375 ±10 P/E FZ 2,000–10,000 SEMI Prime, Empak cst
3 n–type Si:P [111] ±0.5° 6″ 675 P/P FZ >6,900 SEMI Prime, 1 JEIDA Flat (47.5mm), in Empak, cassettes of 6, 8 & 10 wafers
4 n–type Si:P [112–5° towards[11–1]] ±0.5° 6″ 1,000 ±10 C/C FZ >3,000 SEMI, 1 JEIDA Flat (47.5mm), Empak cst, TTV<4µm
5
6 p–type Si:B [100] 5″ 525 ±15 P/E FZ 14–22 SEMI Prime, hard cst
7 n–type Si:P [100] 5″ 625 P/P FZ 5,500–14,000 SEMI Prime, 1Flat, Empak cst, in cassettes of 7, 8, 8.
8 n–type Si:P [100] 5″ 625 P/P FZ 5,500–14,000 SEMI Prime, 1Flat, in Empak, cassettes of 5 & 12 wafers
9 n–type Si:P [111] 5″ 300 ±15 P/E FZ 1,000–3,000 Prime, hard cst
10
11
12 p–type Si:B [100] 4″ 200 ±10 BROKEN FZ 3,000–5,000 Empak cst, 6 shattered wafers
13 p–type Si:B [111] ±0.5° 4″ 525 P/E FZ 5,000–9,000 SEMI Prime, 1Flat, Empak cst
14 p–type Si:B [111] ±0.5° 4″ 1,000 P/E FZ >5,000 SEMI, 1Flat, Empak cst
15 p–type Si:B [111] ±0.5° 4″ 525 P/P FZ 3,000–5,000 SEMI Prime, 1Flat, Empak cst
16 n–type Si:P [100] 4″ 11,700 P/E FZ 6,000–10,000 SEMI Prime, 1Flat, Individual cst
17 n–type Si:P [100] 4″ 380 P/E FZ 5,000–10,000 SEMI Prime, 1Flat, Empak cst
18 n–type Si:P [100] 4″ 1,000 P/E FZ 5,000–12,000 SEMI Prime, 1Flat, Empak cst
19 n–type Si:P [100] 4″ 380 P/E FZ 5,000–10,000 SEMI Prime, 1Flat, Empak cst
20 n–type Si:P [100] 4″ 380 P/E FZ 5,000–10,000 SEMI Prime, 1Flat, Empak cst
21 n–type Si:P [100] 4″ 380 P/P FZ 5,000–10,000 SEMI Prime, 1Flat, Empak cst, 3 csts (3,3,3)
22 n–type Si:P [100] 4″ 525 P/E FZ 4,000–7,000 SEMI, 1Flat
23 n–type Si:P [100] 4″ 200 P/P FZ >3,000 SEMI Prime, 1Flat, Empak cst
24 n–type Si:P [100] 4″ 300 P/E FZ 3,000–4,000 SEMI Prime, 2Flats, Empak cst
25 n–type Si:P [100] 4″ 300 P/E FZ 3,000–4,000 SEMI Prime, 2Flats, Empak cst
26 n–type Si:P [100] 4″ 525 P/E FZ 3,000–4,000 SEMI, 1Flat
27 n–type Si:P [100] 4″ 300 P/E FZ 2,000–3,000 SEMI Prime, 2Flats, Empak cst
28 n–type Si:P [100] 4″ 525 P/E FZ >1,000 {1,720–2,120} SEMI, 2Flats Lifetime>6ms, cassettes of 8 and 9 wafers (3 of 9 wafers with minor scratches)
29 n–type Si:P [111] ±0.5° 4″ 525 P/P FZ 8,000–10,000 SEMI Prime, 1Flat, Empak cst
30 n–type Si:P [111] 4″ 2,000 P/P FZ 7,500–14,000 SEMI Prime, 1Flat, in single wafer csts, sealed in groups of 5
31 n–type Si:P [111] ±0.5° 4″ 675 P/E FZ 7,500–14,000 SEMI Prime, 1Flat, Empak cst
32 n–type Si:P [111] ±0.5° 4″ 675 P/E FZ 7,500–14,000 SEMI Prime, 1Flat, Empak cst
33 n–type Si:P [111] ±0.5° 4″ 675 P/E FZ >7,000 SEMI, 1Flat, Empak cst
34 n–type Si:P [111] ±0.5° 4″ 675 P/E FZ >7,000 SEMI, 1Flat, Empak cst
35 n–type Si:P [111] ±0.5° 4″ 675 P/E FZ >7,000 SEMI Test, 1Flat Wafer is unselaed and scratched
36 n–type Si:P [111] ±0.5° 4″ 200 ±10 P/P FZ 5,000–10,000 SEMI Prime, 1Flat, in Empak, cassettes of 6, 6 & 7 wafers
37 n–type Si:P [111] ±0.5° 4″ 525 P/P FZ 5,000–8,000 SEMI Prime, 1Flat, Empak cst
38 n–type Si:P [111] ±0.5° 4″ 525 P/P FZ 5,000–8,000 SEMI Prime, 1Flat, Empak cst
39 n–type Si:P [111] ±0.5° 4″ 525 P/P FZ 3,000–10,000 SEMI Prime, 1Flat, Empak cst
40 n–type Si:P [111] ±1° 4″ 380 P/E FZ 2,000–3,000 {2,085–2,624} SEMI Prime, 1Flat, Epak cst, TTV<5µm, T>1,000µs, cassettes of 5, 5 & 10 wafers
41 n–type Si:P [111] ±1° 4″ 380 P/E FZ 2,000–3,000 SEMI Prime, 1Flat, Epak cst, TTV<5µm; T>1,000µs, cassettes of 6, 6 & 10 wafers
42 n–type Si:P [111] 4″ 355 ±15 P/P FZ 1,000–2,000 SEMI Prime, 1Flat, Empak cst
43 n–type Si:P [111] ±0.5° 4″ 1,000 P/E FZ >1,000 SEMI Prime, 1Flat, Empak cst
44 n–type Si:P [111] ±1° 4″ 380 P/E FZ 1,000–2,000 {1,756–1,962} SEMI Prime, 1Flat, Epak cst; T>1,000µs
45 n–type Si:P [111] ±1° 4″ 380 P/E FZ 1,000–2,000 SEMI Prime, 1Flat, Epak cst; T>1,000µs, cassettes of 5 & 5 wafers
46 n–type Si:P [111] 4″ 370 ±5 L/L FZ 50–60 SEMI Prime, hard cst, cassettes of 5, 5, 5, 14 & 25 wafers
47 n–type Si:P [111] 4″ 240 ±10 E/E FZ 2.81–3.06 hard cst
48 n–type Si:P [112–5° towards[11–1]] ±0.5° 4″ 795 E/E FZ >100 SEMI, 1Flat, Empak cst, TTV<4µm
49 n–type Si:P [755] 4″ 500 P/P FZ 5,000–8,000 SEMI Prime, 1Flat, Empak cst
50 Intrinsic Si:– [111] ±0.5° 4″ 525 P/E FZ 15,000–20,000 SEMI Prime, 2Flats
51 Intrinsic Si:– [111] ±0.5° 4″ 500 P/P FZ 15,000–20,000 SEMI Prime, 2Flats
52 Intrinsic Si:– [111] ±0.5° 4″ 380 P/P FZ 15,000–20,000 SEMI Prime, 2Flats
53 Intrinsic Si:– [111] ±0.5° 4″ 525 P/P FZ 10,000–20,000 SEMI Prime, 1Flat, Empak cst, in individual cassette.
54 Intrinsic Si:– [111] ±0.5° 4″ 1,000 P/E FZ >5,000 SEMI Prime, 1Flat, in Empak, cassettes of 7 & 8 wafers
55
56 p–type Si:B [100] 3″ 380 P/E FZ 3,000–5,000 SEMI, 1Flat
57 p–type Si:B [211] ±1° 3″ 425 P/E FZ >5,000 SEMI Prime, 1Flat, Empak cst
58 p–type Si:B [211] ±1° 3″ 425 P/E FZ >5,000 SEMI Prime, 1Flat, Empak cst
59 p–type Si:B [111] ±0.5° 3″ 625 P/P FZ >5,000 SEMI Prime, 1Flat, Empak cst, TTV<4µm
60 n–type Si:P [100] 3″ 380 P/E FZ 4,000–5,000 SEMI Prime, 2Flats, hard cst
61 n–type Si:P [100] 3″ 280 P/P FZ >3,000 SEMI Prime, 2Flats, hard cst
62 n–type Si:P [211] 3″ 380 P/P FZ 2,000–6,000 SEMI, 1Flat
63 n–type Si:P [211] 3″ 475 P/P FZ NTD 50–60 {53–58} SEMI Prime, 2Flats, Empak cst
64 n–type Si:P [211] 3″ 475 P/P FZ NTD 50–60 SEMI Prime, 2Flats, in Empak, cassettes of 5, 5 & 10 wafers
65 n–type Si:P [111–3.5°] ±0.5° 3″ 508 ±15 P/E FZ >5,000 SEMI Prime, 2Flats, Empak cst, cassettes of 5, 7 & 10 wafers
66 n–type Si:P [111–3.5°] ±0.5° 3″ 508 ±15 P/E FZ >5,000 SEMI, 2Flats, Empak cst
67 n–type Si:P [111] 3″ 380 P/E FZ 2,500–3,000 SEMI Prime, 1Flat, Empak cst
68 n–type Si:P [111] 3″ 380 P/P FZ 1,800–2,500 SEMI Prime, 2Flats, Empak cst
69 n–type Si:P [111] ±0.5° 3″ 380 P/E FZ 1,800–3,000 SEMI Prime, 2Flats, Empak cst
70 n–type Si:P [111] 3″ 380 P/P FZ 1,800–2,500 SEMI Prime, 2Flats, Empak cst
71 Intrinsic Si:– [100] 3″ 225 P/P FZ >10,000 SEMI, 1Flat
72 Intrinsic Si:– [100] 3″ 380 P/E FZ 10,000–20,000 SEMI Prime, 1Flat
73 Intrinsic Si:– [111] ±0.5° 3″ 1,000 P/P FZ 20,000–70,000 Prime, NO Flats in cassettes of 3, 3 & 4.
74 Intrinsic Si:– [111] ±0.5° 3″ 500 P/P FZ 20,000–60,000 Prime, NO Flats, in cassettes of 5.
75 Intrinsic Si:– [111] ±0.5° 3″ 500 P/P FZ 20,000–60,000 Prime, NO Flats, Empak cst
76 Intrinsic Si:– [111] ±0.5° 3″ 500 P/E FZ >20,000 SEMI, 1Flat
77 Intrinsic Si:– [112] 3″ 380 P/P FZ >5,000 SEMI Prime, 1Flat, Empak cst
78
79 p–type Si:B [100] 2″ 250 BROKEN FZ >500 SEMI, 2Flats, hard cst
80 p–type Si:B [100] 2″ 150 P/P FZ ~50 {28–38} SEMI, 2Flats, hard cst
81 p–type Si:B [100] 2″ 300 P/P FZ 1–10 {6.4–7.0} SEMI, 2Flats, hard cst
82 p–type Si:B [100] 2″ 300 P/P FZ 1–10 SEMI, 2Flats, hard cst
83 p–type Si:B [111] ±0.5° 2″ 3,000 P/E FZ >10,000 NO Flats
84 p–type Si:B [111] ±0.5° 2″ 2,000 P/E FZ 8,000–10,000 SEMI, 1Flat, Lifetime>2,000µs, in single wafer cassettes, sealed in groups of 5
85 p–type Si:B [111] ±0.5° 2″ 625 P/P FZ 5,400–20,000 SEMI, 1Flat, hard cst
86 p–type Si:B [111] ±0.5° 2″ 280 P/P FZ 5,400–20,000 SEMI, 1Flat, hard cst
87 p–type Si:B [111] ±0.5° 2″ 280 P/P FZ 5,400–20,000 SEMI, 1Flat, hard cst, cassettes of 6, 8 & 10 wafers
88 p–type Si:B [111] ±0.5° 2″ 300 P/E FZ >5,000 NO Flats, hard cst
89 p–type Si:B [111] ±0.5° 2″ 500 P/P FZ >5,000 SEMI, 1Flat
90 n–type Si:P [110] ±1° 2″ 525 P/E FZ 5,000–10,000 SEMI, hard cst, Primary Flat @ [111]±0.5°, Secondary Flat @ [111] 70.5º CW from Primary
91 n–type Si:P [110] ±1° 2″ 525 P/E FZ 5,000–10,000 SEMI, hard cst, Primary Flat @ [111]±0.5°, Secondary @ [111] 70.5º CW from Primary, 3, 5 & 7 wafers
92 n–type Si:P [100] 2″ 500 P/P FZ 3,000–4,000 SEMI Prime, 2Flats, Empak cst
93 n–type Si:P [100] 2″ 300 P/E FZ >2,000 SEMI, 1Flat, hard cst
94 n–type Si:P [100] 2″ 200 P/P FZ >1,000 SEMI, 2Flats, hard cst
95 n–type Si:P [100] 2″ 70 ±15 P/P FZ >1,000 {1,500–1,930} SEMI, 2Flats, Individual cst
96 n–type Si:P [100] 2″ 200 P/P FZ 500–1,000 SEMI, 2Flats, hard cst
97 n–type Si:P [100] 2″ 300 P/E FZ 13–40 {20–30} SEMI, 1Flat, hard cst
98 n–type Si:P [111] ±0.5° 2″ 430 P/E FZ 8,200–13,000 {8,000–13,000} SEMI, 1Flat, hard cst
99 n–type Si:P [111] 2″ 381 P/E FZ 2,000–5,000 SEMI, hard cst
100 n–type Si:P [111] ±0.5° 2″ 280 P/P FZ >2,000 {2,000–5,000} SEMI, 1Flat, hard cst
101 n–type Si:P [111] ±0.5° 2″ 400 E/E FZ NTD 93–113 SEMI, NO Flats, in coin–roll
102 n–type Si:P [111] ±0.5° 2″ 400 E/E FZ NTD 93–113 SEMI,NO Flats, in coin–roll
103 n–type Si:P [111] ±0.5° 2″ 400 E/E FZ NTD 93–113 SEMI, NO Flats, coin roll
104 n–type Si:P [111] ±0.5° 2″ 300 P/E FZ 70–90 {70–80} SEMI, 2Flats, hard cst
105 n–type Si:P [111–0.03°] ±0.01° 2″ 550 P/E FZ 40–70 {46–69} SEMI, 1Flat, hard cst, cassettes of 2, 4 & 5 wafers
106 Intrinsic Si:– [100] 2″ 330 P/P FZ >20,000 SEMI, 1Flat, hard cst
107 Intrinsic Si:– [100] 2″ 330 P/P FZ >8,400 SEMI, 1Flat, cassettes of 1, 3 wafers
108 Intrinsic Si:– [100] 2″ 300 P/P FZ >5,000 {5,100–6,500} SEMI, 2Flats, hard cst
109 Intrinsic Si:– [111] ±0.5° 2″ 330 P/P FZ >20,000 SEMI, 1Flat
110 Intrinsic Si:– [111] ±0.5° 2″ 380 P/P FZ >20,000 SEMI, 1Flat, hard cst, in cassettes of (6,7,7)
111 Intrinsic Si:– [111] ±0.5° 2″ 330 P/P FZ >20,000 SEMI, 1Flat, hard cst
112 Intrinsic Si:– [111] ±0.5° 2″ 330 P/P FZ >20,000 SEMI, 1Flat, hard cst Light Scratches
113 Intrinsic Si:– [111] ±0.5° 2″ 275 P/E FZ >20,000 SEMI, 2Flats, hard cst
114 Intrinsic Si:– [111] ±0.5° 2″ 200 P/P FZ >20,000 SEMI, 1Flat, Individual cst
115 Intrinsic Si:– [111] ±0.5° 2″ 275 P/E FZ 10,000–20,000 SEMI, 2Flats, hard cst
116 Intrinsic Si:– [111] ±0.5° 2″ 275 P/E FZ 10,000–20,000 SEMI, 2Flats, hard cst
117 Intrinsic Si:– [111] ±0.5° 2″ 275 P/E FZ 5,000–10,000 SEMI, 2Flats, hard cst

 

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