Description
4″ Si Wafers (4 inch Si wafers)
Note: Surface – P = Polished, E = Etched, C = AsCut, Ox = Oxide (on that layer); Material – CZ unless noted
Note: Items sold in quantities of 25, unless noted. Please email us to check the availability , price and lead time etc.
Item | Material | Orient. | Diam | Thck | Surf. | Resistivity | Comment |
(mm) | (μm) | Ωcm | |||||
1 | N/Ph | [100] | 100mm | 380um | SSP | ||
2 | N/Ph | [111] | 100mm | 355um | SSP | ||
3 | P/B | [111] | 100mm | 255um | SSP | ||
4 | N/Ph | [100] | 100mm | 470um | DSP | ||
5 | N/Ph | [100] | 100mm | 525um | SSP | Mechanical Grade for Spin Coating | |
6 | N/Ph | [100] | 100mm | 500um | SSP | Prime Grade with flat | |
7 | N/Ph | [100] | 100mm | 400um | SSP | Test Grade with flat | |
8 | Undoped | [100] | 100mm | 500um | DSP | Prime Grade | |
9 | Intrinsic Si:- | [100] | 100mm | 500um | DSP | Prime Grade | |
10 | P/B | [100] | 100mm | 550 | SSP | 5–20 | 2 SEMI Flats |
11 | P/B | [100] | 100mm | 380 | SSP | 0.03-0.07 | 2 SEMI Flats |
12 | P/B | [111] | 100mm | 375 | SSP | 2–5 | 1 SEMI Flat |
13 | P/B | [111] | 100mm | 525 | SSP | 2–5 | 1 SEMI Flat |
14 | P/B | [100] | 100mm | 425 | SSP | 0.1-50 | 2 SEMI Flats |
15 | N/As | [111] | 100mm | 525 | SSP | 0.0025-0.004 | 1 SEMI Flat |
16 | N/Ph | [100] | 100mm | 525 | SSP | 3–5 | 2 Flats Non-Semi |
17 | N/Ph | [100] | 100mm | 525 | SSP | 1.1-1.35 | 2 SEMI Flats |
18 | N/Sb | [111] | 100mm | 525 | SSP | 0.01-0.02 | 2 SEMI Flats |
19 | N/Sb | [100] | 100mm | 625 | SSP | 0.01-0.02 | 2 SEMI Flats |
20 | N/Ph | [100] | 100mm | 775 | SSP | 13–20 | 2 SEMI Flats |
21 | N/Sb | [100] | 100mm | 550 | SSP | 0.01-0.02 | 2 SEMI Flats |
22 | N/Ph | [100] | 100mm | 550 | SSP | 2–5 | 2 SEMI Flats |
23 | N/Ph | [100] | 100mm | 525 | SSP | 0.5-1.8 | 1 Flat Non-Semi |
24 | N/Ph | [100] | 100mm | 525 | SSP | 1–20 | 1 SEMI Flat |
25 | p-type Si:B | [100] | 4″ | 220 ±10 | P/E | FZ >10,000 | SEMI Prime, 1Flat, Empak cst |
26 | p-type Si:B | [100] | 4″ | 230 ±10 | P/E | FZ >10,000 | SEMI Prime, 1Flat, Empak cst |
27 | p-type Si:B | [100] | 4″ | 500 | P/P | FZ >7,000 | SEMI Prime, 1Flat, Empak cst, TTV<1μm |
28 | p-type Si:B | [100] | 4″ | 300 | P/P | FZ 500–1,000 | SEMI Prime, 2Flats, Empak cst |
29 | p-type Si:B | [100] | 4″ | 300 | P/P | FZ 500–1,000 | SEMI Prime, 2Flats, Empak cst |
30 | p-type Si:B | [100] | 4″ | 1,000 | P/P | FZ 100–200 | SEMI Prime, 1Flat, Empak cst |
31 | p-type Si:B | [100] | 4″ | 610 ±10 | E/E | FZ 8–12 | 1Flat at [100], Empak cst |
32 | p-type Si:B | [100] | 4″ | 250 | P/P | FZ 1–3 {0.97–1.01} | SEMI Prime, 2Flats, Empak cst |
33 | p-type Si:B | [100] ±0.3° | 4″ | 500 ±15 | P/E | FZ 1–5 | SEMI Prime, 2Flats, Lifetime>100μs, Empak cst |
34 | p-type Si:B | [100] | 4″ | 525 | P/E | FZ 1–5 {1.83–2.35} | SEMI Prime, 2Flats, Lifetime>13.7μs, Empak cst |
35 | p-type Si:B | [100] | 4″ | 280 | P/P | FZ 0.05–1.00 | SEMI Prime, 1Flat, Empak cst |
36 | p-type Si:B | [111] ±0.5° | 4″ | 400 ±15 | P/E | FZ >20,000 | SEMI Prime, 1Flat, Empak cst, TTV<5μm, Lifetime>1,000μs |
37 | p-type Si:B | [111] ±0.5° | 4″ | 397 | P/E | FZ 10,000–15,000 | SEMI Prime, Backside ACID Etched, Empak cst |
38 | n-type Si:P | [110] ±0.5° | 4″ | 500 | P/P | FZ 5,000–15,000 | SEMI Prime, 2Flats — Primary @ <111>±0.5° — edge unrounded, Secondary @ <111>. 70.5° CCW from Primary, Empak cst, Lifetime>6,000μs |
39 | n-type Si:P | [110] ±0.5° | 4″ | 500 | P/P | FZ 5,000–15,000 | SEMI Prime, 2Flats — Primary @ <111>±0.5° — edge unrounded, Secondary @ <111>. 70.5° CCW from Primary, in Empak cassette Lifetime>6,000μs |
40 | n-type Si:P | [110] ±0.5° | 4″ | 500 | P/P | FZ 5,000–15,000 | SEMI Prime, 2Flats — Primary @ <111>±0.5°, Secondary @ <111>. 70.5° CCW from Primary, in Empak cst, 3 wafers with minor edge chips, Lifetime >6,000μs |
41 | n-type Si:P | [100] | 4″ | 200 ±10 | P/P | FZ >5,000 | SEMI TEST (Scratches & defects on back–side), 1Flat, Ox<1E16/cc, C<1E16/cc, Lifetime>1,050μs, Empak cst |
42 | n-type Si:P | [100] | 4″ | 200 ±10 | P/P | FZ >5,000 | SEMI Test, 1Flat, Empak cst, Sratches on both sides |
43 | n-type Si:P | [100] | 4″ | 380 | P/E | FZ 5,000–10,000 | SEMI Prime, 1Flat, Lifetime>1,000μs, in Empak cassettes of 2 wafers |
44 | n-type Si:P | [100–1.5° towards[110]] ±0.5° | 4″ | 525 | P/E | FZ >5,000 | SEMI Prime, 2Flats, Lifetime>980μs, in Empak |
45 | n-type Si:P | [100] | 4″ | 500 | G/G | FZ 4,300–6,300 | SEMI, 2Flats, Lifetime>1,000μs, Both sides Ground, Empak cst |
46 | n-type Si:P | [100] | 4″ | 525 | P/E | FZ 4,200–8,000 | SEMI TEST (Bad Surface & Chips), Lifetime>1,400μs, 1Flat, Empak cst |
47 | n-type Si:P | [100] | 4″ | 525 | P/E | FZ 4,200–8,000 | SEMI TEST (Bad Surface & Chips), Lifetime>1,400μs, 1Flat, in Empak cassettes of 6, 7 & 7 wafers |
48 | n-type Si:P | [100] | 4″ | 380 | P/E | FZ >3,500 | SEMI Prime, 1Flat, Empak cst |
49 | n-type Si:P | [100] ±0.2° | 4″ | 380 ±10 | P/E | FZ >3,500 | SEMI TEST (in opened Empak cst), 1 Flat |
50 | n-type Si:P | [100] | 4″ | 200 | P/P | FZ >3,000 | SEMI Prime, 1Flat, Empak cst, MCC Lifetime > 1,000μs, |
51 | n-type Si:P | [100] | 4″ | 200 | P/P | FZ >3,000 | SEMI Prime, 1Flat, Empak cst |
52 | n-type Si:P | [100] | 4″ | 400 | P/E | FZ 2,000–6,500 | SEMI Prime, 2Flats, Empak cst, Lifetime>1,000μs |
53 | n-type Si:P | [100] | 4″ | 915 ±10 | E/E | FZ 2,000–3,000 | 1Flat at [100], Empak cst |
54 | n-type Si:P | [100] | 4″ | 300 | L/L | FZ 1,100–1,600 | SEMI, 1Flat, Empak cst |
55 | n-type Si:P | [100] ±1° | 4″ | 200 ±10 | P/P | FZ >1,000 | SEMI Prime, 1Flat, TTV<1μm, in Empak cst |
56 | n-type Si:P | [100] | 4″ | 300 ±5 | P/P | FZ >1,000 | SEMI TEST, 1Flat, TTV<2μm, Empak cst |
57 | n-type Si:P | [100] ±0.2° | 4″ | 300 ±5 | P/P | FZ >1,000 | SEMI Prime, 1Flat, TTV<2μm, Empak cst |
58 | n-type Si:P | [100] | 4″ | 200 ±10 | BROKEN | FZ 800–1,500 | Broken P/E wafers, in various size pieces, Lifetime >1,000μs |
59 | n-type Si:P | [100] | 4″ | 300 | L/L | FZ 800–1,500 | SEMI, 1Flat, Empak cst |
60 | n-type Si:P | [100] | 4″ | 500 | P/P | FZ 50–70 | SEMI Prime, 1Flat, Empak cst |
61 | n-type Si:P | [100] | 4″ | 500 ±10 | P/P | FZ 50–70 | SEMI Prime, 1Flat, Empak cst |
62 | n-type Si:P | [100] | 4″ | 300 | P/P | FZ 1–5 {1.03–1.56} | SEMI Prime, 2Flats, Empak cst, Lifetime ~500μs |
63 | n-type Si:P | [100] | 4″ | 300 | P/P | FZ 1–5 | SEMI TEST (small defects on the back side). 2Flats, Empak cst |
64 | n-type Si:P | [100–4° towards[111]] ±0.5° | 4″ | 525 | P/E | FZ 1–10 {3.2–4.0} | SEMI Prime, 2Flats, Lifetime: ~500μs, in Empak cassettes of 5 wafers |
65 | n-type Si:P | [111] ±0.5° | 4″ | 300 | P/E | FZ 15,000–20,000 | SEMI Prime, back–side ACID Etched, Empak cst |
66 | n-type Si:P | [111] ±0.5° | 4″ | 500 | P/E | FZ 10,000–15,000 | SEMI Prime, 1Flat, Empak cst, TTV<5μm |
67 | n-type Si:P | [111] ±0.25° | 4″ | 675 | P/E | FZ 10,000–20,000 | SEMI TEST (Light scratches), 1Flat, Lifetime>1,000μs, Empak cst, |
68 | n-type Si:P | [111] ±0.5° | 4″ | 675 | P/E | FZ 7,500–14,000 | SEMI Prime, 1Flat, Lifetime>800μs, Empak cst |
69 | n-type Si:P | [111] ±0.5° | 4″ | 630 | P/G | FZ >7,000 | SEMI Prime, 1Flat, in Empak, Lifetime>1,000μs, Back–side Fine Ground |
70 | n-type Si:P | [111] ±0.5° | 4″ | 675 | P/E | FZ >7,000 | SEMI, 1Flat, Lifetime>1,600μs, in Empak cassettes of 6 and 8 wafers |
71 | n-type Si:P | [111] ±0.5° | 4″ | 675 | P/E | FZ >7,000 | SEMI, 1Flat, in Empak, Lifetime>1,600μs |
72 | n-type Si:P | [111] ±0.5° | 4″ | 675 | P/E | FZ >7,000 | SEMI TEST (Scratches, in Unsealed Empak cassette), 1Flat, Lifetime>1,600μs |
73 | n-type Si:P | [111] ±0.25° | 4″ | 675 | P/E | FZ 7,000–10,000 | SEMI Prime, 1Flat, in Empak, Lifetime>1,000μs, Light scratches |
74 | n-type Si:P | [111] ±0.5° | 4″ | 150 ±10 | P/P | FZ >5,000 | SEMI Prime, 2Flats, Empak cst, TTV<5μm |
75 | n-type Si:P | [111] ±0.5° | 4″ | 150 ±15 | P/P | FZ >5,000 | SEMI Prime, 2Flats, Empak cst |
76 | n-type Si:P | [111] ±0.5° | 4″ | 150 ±10 | P/P | FZ >5,000 | SEMI Prime, 2Flats, Empak cst, TTV<5μm, Bow<20μm, Warp<20μm, Wafers with dimples |
77 | n-type Si:P | [111] ±0.5° | 4″ | 150 ±10 | BROKEN | FZ 5,000–10,000 | Broken P/E wafers, in Empak |
78 | n-type Si:P | [111] ±0.5° | 4″ | 525 | P/E | FZ >5,000 | SEMI Prime, 1Flat, Lifetime>1,000μs, Empak cst |
79 | n-type Si:P | [111–1° towards[110]] ±0.5° | 4″ | 525 | P/E | FZ >5,000 | SEMI TEST (scratches on back–side), 1Flat, Empak cst |
80 | n-type Si:P | [111] ±0.25° | 4″ | 675 | P/E | FZ 5,000–7,000 | SEMI Prime, 1Flat, in Empak, Lifetime>1,000μs |
81 | n-type Si:P | [111] ±0.25° | 4″ | 675 | P/E | FZ 5,000–7,000 | SEMI TEST (light scratches), 1Flat, Lifetime>1,000μs, in Empak |
82 | n-type Si:P | [111] ±0.5° | 4″ | 525 | P/P | FZ >3,000 | SEMI Prime, 2Flats, Lifetime>1,000μs, Empak cst |
83 | n-type Si:P | [111] ±0.5° | 4″ | 525 | P/P | FZ >3,000 | SEMI Prime, 1Flat (32.5mm) |
84 | n-type Si:P | [111] ±0.5° | 4″ | 525 | P/P | FZ >3,000 | SEMI Prime, 2Flats, Lifetime>1,000μs, in Empak cassettes of 5, & 10 wafers |
85 | n-type Si:P | [111] ±0.5° | 4″ | 525 | P/E | FZ 3,000–5,000 | SEMI Prime, 1Flat, in Empak, Lifetime>1,000μs |
86 | n-type Si:P | [111] ±0.25° | 4″ | 525 | P/E | FZ 3,000–5,000 | SEMI Prime, 1Flat, in Empak cassettes of 3, 3 & 4 wafers |
87 | n-type Si:P | [111] ±0.25° | 4″ | 525 | P/E | FZ 3,000–5,000 | SEMI TEST (light scratches), 1Flat, Empak cst |
88 | n-type Si:P | [111] ±0.5° | 4″ | 285 ±10 | P/P | FZ 2,500–2,700 | SEMI Prime, 2Flats, Empak cst |
89 | n-type Si:P | [111] ±0.5° | 4″ | 285 ±10 | P/P | FZ 2,500–2,700 | SEMI Prime, 2Flats, Empak cst |
90 | n-type Si:P | [111] ±0.5° | 4″ | 290 ±10 | P/P | FZ 2,500–3,500 | SEMI TEST (Surface defects), 2Flats, Empak cst |
91 | n-type Si:P | [111] ±1° | 4″ | 380 | P/E | FZ 2,000–3,000 | SEMI Prime, 1Flat, TTV<5μm, Lifetime>1,000μs, in Epak cassettes of 6 wafers |
92 | n-type Si:P | [111] ±0.5° | 4″ | 525 | P/E | FZ 1,500–3,000 | SEMI Prime, 1Flat, in Empak, Lifetime>1,100μs |
93 | n-type Si:P | [111] ±0.5° | 4″ | 525 | P/E | FZ 900–2,300 | SEMI Test, Empak cst |
94 | n-type Si:P | [111] ±0.5° | 4″ | 200 | P/P | FZ 430–550 | SEMI Prime, 1Flat, Empak cst |
95 | n-type Si:P | [111] ±1° | 4″ | 475 | P/E | FZ 400–800 | Polished but unsealed and dirty. Can be polished and cleaned for additional charge. SEMI, 1Flat, Empak cst |
96 | n-type Si:P | [111] | 4″ | 370 ±5 | L/L | FZ 50–60 | SEMI, in hard cassettes of 5, 5, 8, 8, 8 & 14 wafers |
97 | n-type Si:P | [111] ±0.5° | 4″ | 475 ±13 | P/E | FZ 6.03–7.37 | SEMI Prime, 2Flats, TTV<10μm, Bow<5μm, Warp<10μm, Empak cst |
98 | n-type Si:P | [111] ±0.5° | 4″ | 475 ±13 | P/E | FZ 6.03–7.37 | SEMI TEST (Scratches), 2Flats, TTV<10μm, Bow<5μm, Warp<10μm, Empak cst |
99 | n-type Si:P | [111] ±0.5° | 4″ | 500 ±13 | E/E | FZ 6.03–7.37 | SEMI, 2Flats |
100 | n-type Si:P | [112–3° towards[11–1]] ±0.5° | 4″ | 762 | P/P | FZ >100 | SEMI Prime, 1Flat, Empak cst |
101 | n-type Si:P | [112–5° towards[11–1]] ±0.5° | 4″ | 762 | P/P | FZ ~100 | SEMI Prime, 1Flat, Empak cst, TTV<3μm |
102 | n-type Si:P | [112–5° towards[11–1]] ±0.5° | 4″ | 765 | P/P | FZ ~100 | SEMI Prime, 1Flat, Empak cst, TTV<3μm |
103 | n-type Si:P | [112–5° towards[11–1]] ±0.5° | 4″ | 795 | E/E | FZ >100 | SEMI, 1Flat, in Empak, TTV<4μm, Lifetime>2,000μs |
104 | n-type Si:P | [755] | 4″ | 500 | P/P | FZ 5,000–8,000 | SEMI Prime, 1Flat, in Empak, Lifetime>2,000μs |
105 | Intrinsic Si:- | [100] | 4″ | 350 | P/P | FZ >20,000 | SEMI Prime, 1Flat, Empak cst |
106 | Intrinsic Si:- | [100] | 4″ | 525 | P/P | FZ >20,000 | SEMI Prime, 1Flat, Empak cst |
107 | Intrinsic Si:- | [100] | 4″ | 525 | P/P | FZ >20,000 | SEMI Prime, 2Flats (SF 180° from PF), TTV<10μm, Empak cst |
108 | Intrinsic Si:- | [100] | 4″ | 525 | P/E | FZ >20,000 | SEMI Prime, 1Flat, Empak cst, TTV<5μm |
109 | Intrinsic Si:- | [100] | 4″ | 525 | P/E | FZ >20,000 | SEMI Prime, 1Flat, Empak cst, TTV<5μm |
110 | Intrinsic Si:- | [100] | 4″ | 675 ±5 | P/P | FZ >20,000 | SEMI, 1Flat, Empak cst |
111 | Intrinsic Si:- | [100] | 4″ | 300 | P/E | FZ 16,000–20,000 | SEMI Prime, 1Flat, Empak cst, Back–side polish is imperfect |
112 | Intrinsic Si:- | [100] | 4″ | 500 | P/E | FZ 13,000–20,000 | SEMI Prime, 1Flat, Empak cst, TTV<5μm, Front–side Prime polish, Back–side light polish |
113 | Intrinsic Si:- | [100] | 4″ | 220 ±10 | P/P | FZ >10,000 | SEMI Prime, 1Flat, Empak cst |
114 | Intrinsic Si:- | [100] | 4″ | 300 | P/P | FZ >10,000 | SEMI Prime, 1Flat, Empak cst |
115 | Intrinsic Si:- | [100] | 4″ | 475 | P/P | FZ >10,000 | SEMI Prime, 1Flat, Empak cst, TTV<1.5μm |
116 | Intrinsic Si:- | [100] | 4″ | 615 ±10 | C/C | FZ >10,000 | SEMI Prime, 1Flat, Empak cst |
117 | Intrinsic Si:- | [100] | 4″ | 700 | P/P | FZ >10,000 | SEMI Prime, 1Flat, Empak cst, TTV<1μm |
118 | Intrinsic Si:- | [100] | 4″ | 765 | C/C | FZ >10,000 | SEMI Prime, 1Flat, Empak cst |
119 | Intrinsic Si:- | [100] | 4″ | 380 | P/E | FZ 8,000–10,000 | SEMI TEST (light scratches & particles), 1Flat, Lifetime>1,200μs, in Empak |
120 | Intrinsic Si:- | [100] | 4″ | 380 | BROKEN | FZ 8,000–10,000 | Broken wafer, in two halves, SEMI, 1Flat, Lifetime>1,200μs |
121 | Intrinsic Si:- | [100] | 4″ | 350 | P/P | FZ 5,000–8,000 | SEMI TEST (Chuck marks & Scratches), Lifetime>1,200μs, in Empak cassettes of 8 wafers, Lifetime>1,200μs, |
122 | Intrinsic Si:- | [211] ±0.1° | 4″ | 300 ±15 | P/P | FZ >3,000 | SEMI Prime, 1Flat, Empak cst, TTV<1μm |
123 | Intrinsic Si:- | [111] ±0.5° | 4″ | 300 | P/E | FZ 20,000–40,000 | SEMI, 1Flat, TTV<5μm, Empak cst |
124 | Intrinsic Si:- | [111] ±0.5° | 4″ | 500 | P/P | FZ >20,000 | SEMI Prime, 1Flat, Empak cst |
125 | Intrinsic Si:- | [111] ±0.5° | 4″ | 500 | P/E | FZ >20,000 | SEMI Prime, 1Flat, Empak cst |
126 | Intrinsic Si:- | [111] ±1.0° | 4″ | 500 | P/P | FZ >15,000 | SEMI Prime, 1Flat, TTV<5μm, Empak cst |
127 | Intrinsic Si:- | [111] ±0.5° | 4″ | 500 | P/P | FZ 10,000–15,000 | SEMI Prime, 1Flat, Empak cst, TTV<5μm, in Empak cassettes of 9 & 16 wafers |
128 | Intrinsic Si:- | [111] ±0.5° | 4″ | 500 | P/P | FZ >10,000 | SEMI Prime, 1Flat, Empak cst |
129 | Intrinsic Si:- | [111] ±0.5° | 4″ | 500 | P/P | FZ 10,000–20,000 | SEMI Prime, 1Flat, in Empak cassettes of 2 wafers |
130 | Intrinsic Si:- | [111] ±0.5° | 4″ | 525 | P/E | FZ 10,000–20,000 | SEMI, 1Flat, Empak cst |
131 | p-type Si:B | [110] ±0.5° | 4″ | 500 | E/E | 59–67 | SEMI, 1Flat, Empak cst |
132 | p-type Si:B | [110] ±0.2° | 4″ | 500 | P/P | 5–10 | SEMI Prime, Primary Flat @ [111]±0.25°, SFlat @ [111]±5° (109.5° CW from PFlat), Empak cst |
133 | p-type Si:B | [110] ±0.25° | 4″ | 525 | P/E | 5–10 | SEMI Prime, 2Flats @ [111] — Secondary 109.5° CW from Primary, Empak cst |
134 | p-type Si:B | [100] | 4″ | 500 | P/P | 10–20 | SEMI Prime, 2Flats, in single wafer cassettes, can be ordered singly |
135 | p-type Si:B | [100] | 4″ | 500 | P/P | 10–20 | SEMI Prime, Empak cst, TTV<5μm |
136 | p-type Si:B | [100] | 4″ | 500 | P/P | 10–20 | SEMI Prime, 2Flats, Empak cst |
137 | p-type Si:B | [100] | 4″ | 1,000 | P/P | 10–20 | SEMI Prime, 2Flats, Empak cst, TTV<5μm, Bow<10μm, Warp<20μm |
138 | p-type Si:B | [100] | 4″ | 1,000 | P/P | 10–20 | SEMI Prime, 2Flats, Empak cst, TTV<5μm, Bow<10μm, Warp<20μm, (Cassettes of 8, 13, 19 wafers) |
139 | p-type Si:B | [100] | 4″ | 300 | P/P | 8–12 | SEMI TEST — Front–side badly polished, 2Flats, Empak cst |
140 | p-type Si:B | [100] | 4″ | 525 | P/E | 8–12 | SEMI Prime, 2Flats, in Empak cassettes of 6, 6 & 7 wafers |
141 | p-type Si:B | [100] | 4″ | 900 | P/P | 8–20 | SEMI Prime, 2Flats, Empak cst |
142 | p-type Si:B | [100] | 4″ | 300 | P/P | 5–10 | SEMI Prime, 2Flats, Empak cst |
143 | p-type Si:B | [100] | 4″ | 380 | P/E | 5–10 | SEMI Prime, 2Flats, Empak cst |
144 | p-type Si:B | [100] | 4″ | 380 | P/E | 5–10 | SEMI TEST (in Opened cassette), 2Flats, Empak cst |
145 | p-type Si:B | [100] | 4″ | 380 | P/E | 5–10 | SEMI TEST (with bad surface), 1Flat, Empak cst |
146 | p-type Si:B | [100] | 4″ | 380 | P/E | 5–10 | SEMI Prime, 1Flat, hard cst, Back–side slightly darker than normal |
147 | p-type Si:B | [100] | 4″ | 380 | BROKEN | 5–10 | Broken P/E Wafers, 1Flat, in Empak |
148 | p-type Si:B | [100] | 4″ | 380 | BROKEN | 5–10 | Broken P/E Wafers, 2Flats, in Empak |
149 | p-type Si:B | [100] | 4″ | 380 | BROKEN | 5–10 | Broken (largest piece is ~30%), 1Flat, in Empak |
150 | p-type Si:B | [100] | 4″ | 380 | BROKEN | 5–10 | Broken P/E wafers, in Empak |
151 | p-type Si:B | [100] | 4″ | 525 | P/E | 5–10 | SEMI Prime, 1Flat, Empak cst, TTV<4μm, Bow<15μm, Warp<30μm |
152 | p-type Si:B | [100] | 4″ | 525 | P/E | 5–10 | SEMI Prime, 1Flat, Empak cst, TTV<4μm, Bow<15μm, Warp<30μm |
153 | p-type Si:B | [100] | 4″ | 525 | P/E | 5–10 | SEMI Test, Dirty and scratched, 2Flats, Empak cst |
154 | p-type Si:B | [100] | 4″ | 525 | P/E | 5–10 | Prime, 1Flat, Empak cst |
155 | p-type Si:B | [100] | 4″ | 1,000 | P/E | 5–10 | SEMI Prime, 1Flat, Empak cst |
156 | p-type Si:B | [100–4° towards[110]] ±0.5° | 4″ | 300 | P/E | 1–10 | SEMI Prime, 2Flats, Empak cst |
157 | p-type Si:B | [100–4° towards[110]] ±0.5° | 4″ | 300 | P/E | 1–10 | SEMI Test, 2Flats, Empak cst, Wafers with pits |
158 | p-type Si:B | [100] | 4″ | 381 ±5 | P/P | 1–30 | SEMI Prime, 2Flats, TTV<5μm, Bow<8μm, Warp<20μm, Empak cst |
159 | p-type Si:B | [100] | 4″ | 475 | P/E | 1–10 | SEMI Prime, 2Flats, Empak cst, Epi edges for 150μm epi growth |
160 | p-type Si:B | [100] ±1° | 4″ | 500 | P/P | 1–20 | SEMI Prime, 1Flat, Empak cst |
161 | p-type Si:B | [100] | 4″ | 500 | P/P | 1–50 | SEMI Prime, 2Flats, Empak cst |
162 | p-type Si:B | [100] | 4″ | 500 | P/P | 1–50 | SEMI Prime, 2Flats, Empak cst |
163 | p-type Si:B | [100] | 4″ | 500 | P/P | 1–50 | SEMI Prime, 2Flats, Empak cst |
164 | p-type Si:B | [100] | 4″ | 500 | P/P | 1–50 | SEMI Prime, 2Flats, Empak cst |
165 | p-type Si:B | [100] | 4″ | 500 | P/P | 1–50 | SEMI Prime, 2Flats, Empak cst |
166 | p-type Si:B | [100] | 4″ | 500 | P/P | 1–50 | SEMI Prime, 2Flats, Empak cst |
167 | p-type Si:B | [100] | 4″ | 525 | P/P | 1–10 | SEMI Prime, 2Flats, Empak cst |
168 | p-type Si:B | [100] | 4″ | 525 | P/P | 1–5 | SEMI Test, 2Flats, Empak cst, Wafers with particles and scratches |
169 | p-type Si:B | [100] ±1° | 4″ | 525 | P/P | 1–15 | SEMI Prime, 2Flats, Empak cst |
170 | p-type Si:B | [100] | 4″ | 525 | P/E | 1–100 | SEMI, 2Flats, Empak cst |
171 | p-type Si:B | [100] | 4″ | 525 | NOxP/POxN | 1–10 | SEMI Prime, 2Flats, Both sides with 150nm of LPCVD Si3N4 over 200nm of SiO2 over Si , Empak cst |
172 | p-type Si:B | [100] | 4″ | 525 | P/P | 1–10 | SEMI Prime, 2Flats, Empak cst, Both sides with 150nm of LPCVD Stoichiometric Silicon Nitride |
173 | p-type Si:B | [100–0.5°] | 4″ | 590 ±10 | E/E | 1–3 | SEMI Prime, 2Flats |
174 | p-type Si:B | [100] | 4″ | 800 | P/P | 1–30 | SEMI, 2Flats, Empak cst |
175 | p-type Si:B | [100] ±1° | 4″ | 1,000 | P/E | >1 | SEMI Prime, Empak cst, TTV<5μm |
176 | p-type Si:B | [100] | 4″ | 1,016 ±13 | P/E | >1 | SEMI Test, Empak cst |
177 | p-type Si:B | [100] | 4″ | 1,025 | P/E | 1–50 | SEMI Prime, Empak cst |
178 | p-type Si:B | [100] ±1° | 4″ | 1,200 | P/P | 1–20 | SEMI notch Prime, Empak cst |
179 | p-type Si:B | [100] | 4″ | 1,335 ±10 | E/E | 1–3 | SEMI Prime, 2Flats, Empak cst |
180 | p-type Si:B | [100] | 4″ | 2,100 | P/E | 1–100 | SEMI Prime, 1Flat, Individual cst, Groups of 5 wafers |
181 | p-type Si:B | [100] | 4″ | 2,100 | P/E | 1–100 | SEMI Prime, 1Flat, Individual cst |
182 | p-type Si:B | [100] | 4″ | 3,000 | P/E | 1–30 {1.3–16.0} | SEMI Prime, 2Flats, Sealed in groups of 10 wafers |
183 | p-type Si:B | [100] | 4″ | 3,000 | P/E | 1–30 | SEMI Prime, 1Flat, Sealed in groups of 10 wafers |
184 | p-type Si:B | [100] | 4″ | 3,000 | P/E | 1–100 | SEMI Prime, 1Flat, Individual cst |
185 | p-type Si:B | [100] | 4″ | 3,175 | P/P | 1–10 | SEMI Prime, 2Flats, Individual cst, TTV<8μm |
186 | p-type Si:B | [100] | 4″ | 3,175 | P/P | 1–10 | SEMI Prime, 2Flats, Individual cst, TTV<8μm |
187 | p-type Si:B | [100] | 4″ | 3,200 | P/E | 1–100 | SEMI Prime, 1Flat, Individual cst, Sealed as group of 9 wafers |
188 | p-type Si:B | [100] | 4″ | 525 | P/E | 0.8–1.0 | SEMI Prime, 2Flats, Empak cst |
189 | p-type Si:B | [100] | 4″ | 275 | P/E | 0.5–2.0 {0.875–0.905} | SEMI Prime, 1Flat, Empak cst, TTV<10μm, Bow<20μm, Warp<30μm, Lifetime>100μs |
190 | p-type Si:B | [100] | 4″ | 890 ±15 | P/P | 0.5–10.0 | SEMI TEST (Scratches), 1Flat, TTV<8μm, Empak cst |
191 | p-type Si:B | [100] | 4″ | 525 | P/E | 0.1–0.2 | SEMI Prime, 2Flats, Empak cst |
192 | p-type Si:B | [100] | 4″ | 350 | P/E | 0.095–0.130 | SEMI Prime, 2Flats, Empak cst |
193 | p-type Si:B | [100] | 4″ | 220 | P/E | 0.04–0.06 | SEMI Prime, 2Flats, Empak cst |
194 | p-type Si:B | [100–6° towards[110]] ±0.5° | 4″ | 525 | P/E | 0.015–0.020 | SEMI Prime, 2Flats, in Empak cassettes of 5, 5, 10 & 10 wafers |
195 | p-type Si:B | [100] ±1° | 4″ | 381 | P/E | 0.01–10.00 | SEMI Prime, 1Flat, Empak cst |
196 | p-type Si:B | [100] | 4″ | 525 | P/E | 0.01–0.02 | SEMI Prime, 2Flats, Empak cst |
197 | p-type Si:B | [100] | 4″ | 525 | P/E | 0.01–0.02 | SEMI, 2Flats, Empak cst |
198 | p-type Si:B | [100] | 4″ | 525 | P/POx | 0.008–0.020 | SEMI Prime, 2Flats, Empak cst |
199 | p-type Si:B | [100] | 4″ | 5,000 | P/E | 0.0028–0.0034 | Prime, NO Flats, Individual cst, Sealed in group of 4 and 6 wafers |
200 | p-type Si:B | [100] | 4″ | 300 | P/P | 0.001–0.005 | SEMI Prime, 2Flats, Empak cst |
201 | p-type Si:B | [100] | 4″ | 500 | P/P | 0.001–0.005 | SEMI Prime, 2Flats, Empak cst, Wafers with striation marks |
202 | p-type Si:B | [100] | 4″ | 500 | P/P | 0.001–0.005 | SEMI Test, 2Flats, Empak cst, Wafers with striation marks, Unsealed and previously opened |
203 | p-type Si:B | [100] | 4″ | 525 ±15 | P/P | 0.001–0.005 | SEMI Prime, 1Flat, Empak cst, TTV<7μm |
204 | p-type Si:B | [100] | 4″ | 525 | P/P | 0.001–0.005 | SEMI Prime, 1Flat, Empak cst |
205 | p-type Si:B | [100] | 4″ | 525 | P/E | 0.001–0.005 | SEMI Prime, 2Flats, Empak cst, TTV<3μm, Bow<10μm, Warp<25μm |
206 | p-type Si:B | [100] | 4″ | 525 | P/E | 0.001–0.005 | SEMI Prime, 2Flats, Empak cst |
207 | p-type Si:B | [100] | 4″ | 525 | BROKEN | 0.001–0.005 | Broken wafer (shattered into many pieces), 1Flat |
208 | p-type Si:B | [100] | 4″ | 800 | C/C | 0.001–0.005 | SEMI, 2Flats, Empak cst, With striation marks |
209 | p-type Si:B | [100] | 4″ | 2,000 | P/P | 0.001–0.005 | SEMI Prime, 2Flats, Individual cst |
210 | p-type Si:B | [100] | 4″ | 725 | C/C | 0.0009–0.0013 | NO Flats, Empak cst |
211 | p-type Si:B | [100] | 4″ | ? | P/P | ? | SEMI Test, 2Flats, Empak cst |
212 | p-type Si:B | [100] | 4″ | 375 | P/E | <0.0015 {0.00091–0.00099} | SEMI Prime, 1Flat, Empak cst, TTV<3μm |
213 | p-type Si:B | [111–0.5°] ±0.5° | 4″ | 525 | P/P | 5–10 | SEMI Prime, 1Flat, in Empak cassettes of 8 & 8 wafers |
214 | p-type Si:B | [111] ±0.5° | 4″ | 1,000 | P/E | 5–10 | SEMI Prime, 1Flat, Empak cst |
215 | p-type Si:B | [111] | 4″ | 350 | P/E | 2–3 | Prime, NO Flats, Empak cst |
216 | p-type Si:B | [111–4°] | 4″ | 525 | P/E | 1.5–6.0 | SEMI Prime, 1Flat, Empak cst |
217 | p-type Si:B | [111] ±0.5° | 4″ | 1,000 | P/E | 1–10 | SEMI Prime, 1Flat, in hard cassettes of 7 & 8 wafers |
218 | p-type Si:B | [111] ±0.5° | 4″ | 525 | P/P | 0.2–1.0 | SEMI Prime, 1Flat, Empak cst |
219 | p-type Si:B | [111] ±0.5° | 4″ | 525 | P/P | 0.2–1.0 | SEMI Prime, 1Flat, Empak cst |
220 | p-type Si:B | [111] ±0.5° | 4″ | 525 | P/P | 0.2–1.0 | SEMI Prime, 1Flat, in Empak cassettes of 6, 7 & 7 wafers |
221 | p-type Si:B | [111–4°] ±0.5° | 4″ | 525 | P/E | 0.01–0.02 | SEMI Prime, 1Flat (57.5mm), Empak cst |
222 | p-type Si:B | [111–4°] ±0.5° | 4″ | 525 | P/E | 0.01–0.02 | SEMI Prime, 1Flat, in Empak cassettes of 7, 8 & 8 wafers |
223 | p-type Si:B | [111–4°] ±0.5° | 4″ | 525 ±15 | P/EOx | 0.005–0.015 {0.0086–0.0135} | SEMI Prime, 1Flat, Empak cst, TTV<5μm, 5,000A LTO on back–side |
224 | p-type Si:B | [111–3°] ±0.5° | 4″ | 525 | P/E | 0.002–0.016 | SEMI Prime, 1Flat, in Empak cassettes of 4, 5 & 5 wafers |
225 | p-type Si:B | [111] ±0.5° | 4″ | 1,000 | P/E | <0.01 | SEMI Prime, 2Flats, Empak cst |
226 | p-type Si:B | [112] ±0.5° | 4″ | 500 | P/P | 1–100 | SEMI Prime, 1Flat, Empak cst |
227 | p-type Si:B | [113] ±0.5° | 4″ | 525 | P/E | 0.010–0.015 | SEMI Prime, 1Flat, in Empak cassettes of 8 wafers |
228 | n-type Si:P | [510] ±1° | 4″ | 1,000 | P/P | 1–100 | Primary Flat Only <001>+/–1°, in Empak cassettes of 3, 3 & 4 wafers |
229 | n-type Si:P | [110] ±0.5° | 4″ | 525 | P/P | 20–80 | SEMI Prime, 2Flats @ [111] — Secondary 70.5° CW from Primary, Empak cst |
230 | n-type Si:P | [110] ±0.5° | 4″ | 500 | P/P | 3–10 | SEMI Prime, TTV<10μm, Bow/ Warp<30μm, Primary Flat @ [111]±0.2°, Secondary @ [111] 70.5° CW from Primary, in Empak cassettes of 7 wafers |
231 | n-type Si:P | [110] ±0.3° | 4″ | 525 | P/P | 3–10 | SEMI Prime, TTV<10µm, Bow/ Warp<30µm, Primary Flat @ [111]±0.2°, Secondary @ [111] 70.5° CW from Primary |
232 | n-type Si:P | [110] ±0.3° | 4″ | 525 | P/P | 3–10 | SEMI Prime, TTV<10µm, Bow/ Warp<30µm, Primary Flat @ [111]±0.2°, Secondary @ [111] 70.5° CW from Primary, in Empak cassettes of 6 & 7 wafers |
233 | n-type Si:P | [110] ±0.2° | 4″ | 525 | P/E | 3–10 | SEMI Prime, 2Flats @ [111] — Secondary 70.7° CW from Primary |
234 | n-type Si:P | [110] ±0.2° | 4″ | 525 | P/E | 3–9 | SEMI Prime, 2Flats, Empak cst |
235 | n-type Si:Sb | [110] ±0.5° | 4″ | 525 | P/P | 0.01–0.02 {0.0176–0.0180} | Prime, 2Flats @ [111] — Secondary 70.5° CW from Primary, Empak cst |
236 | n-type Si:As | [110] ±0.5° | 4″ | 275 | P/P | 0.001–0.005 | SEMI TEST (Haze and scratches, TTV<15μm), Primary Flat at [111]±0.5°, |
237 | Secondary at 70.5°±5° CW from Primary, Empak cst | ||||||
238 | n-type Si:As | [110] ±0.5° | 4″ | 275 ±10 | P/P | 0.001–0.005 | SEMI Prime, 2Flats @ [111] — Secondary 70.5° CW from Primary, Empak cst, TTV<5μm |
239 | n-type Si:As | [110] ±0.5° | 4″ | 275 ±10 | P/P | 0.001–0.005 | SEMI Prime, 2Flats at [111] 70.5° apart, TTV<5μm, Empak cst |
240 | n-type Si:As | [110] ±0.5° | 4″ | 400 | E/E | 0.001–0.005 | SEMI, 2Flats @ [111] — Secondary 70.5° CW from Primary, Empak cst |
241 | n-type Si:P | [100] | 4″ | 310 ±10 | P/P | 20–30 | SEMI Test, 2Flats, Empak cst, Unsealed, Polished but dirty. Can be made prime for additional fee |
242 | n-type Si:P | [100] | 4″ | 525 | P/E | 10–30 | SEMI, 2Flats, in Empak cassettes of 7 & 7 wafers |
243 | n-type Si:P | [100] | 4″ | 1,000 | P/P | 10–30 {15–21} | SEMI Prime, 1 Flat @[110] |
244 | n-type Si:P | [100] | 4″ | 5,800 | P/E | 10–100 | SEMI Prime, 2Flats, Individual cst |
245 | n-type Si:P | [100–4° towards[111]] | 4″ | 525 | P/E | 9–11 | SEMI Prime, 2Flats, Empak cst |
246 | n-type Si:P | [100] | 4″ | 224 | P/E | 5–10 | SEMI, Empak cst, Cassette of 12 + 13 wafers |
247 | n-type Si:P | [100] | 4″ | 224 | BROKEN | 5–10 | SEMI Test, 2Flats, Empak cst |
248 | n-type Si:P | [100] | 4″ | 350 ±3 | P/P | 3–5 | SEMI Prime, 2Flats, TTV<5μm, Empak cst |
249 | n-type Si:P | [100] | 4″ | 350 ±10 | P/P | 3–5 | SEMI Prime, 2Flats, in Empak cassettes of 5 & 8 wafers |
250 | n-type Si:P | [100] | 4″ | 350 | P/P | 3–5 | SEMI Test, 2Flats, Empak cst, Haze, pits, scratches |
251 | n-type Si:P | [100] | 4″ | 450 | C/C | 3–5 | SEMI Prime, 2Flats, Empak cst |
252 | n-type Si:P | [100] | 4″ | 525 | P/E | 3–9 {3.5–8.1} | SEMI Prime, 2Flats, TTV<4μm, Bow<15μm, Warp<30μm, Epak cst |
253 | n-type Si:P | [100] | 4″ | 525 | P/E | 3–9 | SEMI Prime, 2Flats, Empak cst |
254 | n-type Si:P | [100] | 4″ | 500 ±10 | P/P | 2–5 | SEMI TEST (wafers have spots resembling water splashes, which do not come off), 2Flats, in hard cassettes of 4, 5 & 5 wafers |
255 | n-type Si:P | [100] | 4″ | 500 ±10 | P/P | 2–5 | SEMI Prime, 2Flats, in Empak cassettes of 6, 6 & 7 wafers |
256 | n-type Si:P | [100] | 4″ | 525 ±10 | P/P | 2–5 | SEMI Prime, 2Flats, Empak cst |
257 | n-type Si:P | [100] | 4″ | 250 ±5 | P/P | 1–100 | SEMI Prime, TTV<3μm, Empak cst |
258 | n-type Si:P | [100] | 4″ | 280 ±2 | P/P | 1–10 | SEMI Prime, 1Flat, Empak cst, TTV<2μm |
259 | n-type Si:P | [100] | 4″ | 400 ±5 | P/P | 1–10 | SEMI Prime, 1Flat, Empak cst, TTV<1μm, Bow<20μm, Warp<20μm |
260 | n-type Si:P | [100] ±1° | 4″ | 400 ±5 | P/P | 1–10 | SEMI Prime, Empak cst, TTV<5μm |
261 | n-type Si:P | [100] ±1° | 4″ | 400 ±10 | P/P | 1–10 | SEMI Prime, 2Flats, Empak cst, TTV<5μm |
262 | n-type Si:P | [100] ±1° | 4″ | 465 ±10 | E/E | 1–3 | SEMI, 1Flat, Empak cst |
263 | n-type Si:P | [100] | 4″ | 525 | P/P | 1–100 | SEMI Prime, 1Flat, Empak cst |
264 | n-type Si:P | [100] | 4″ | 675 | P/P | 1–30 | SEMI Prime, 2Flats, Empak cst, TTV<5μm |
265 | n-type Si:P | [100] | 4″ | 900 | P/P | 1–100 | SEMI Prime, 2Flats, Empak cst |
266 | n-type Si:P | [100] | 4″ | 6,000 | P/P | 1–20 | SEMI Prime, 2Flats, Individual cst (Groups of 5 and 8 wafers) |
267 | n-type Si:P | [100] | 4″ | 525 | P/E | 0.3–0.5 | SEMI Prime, 2Flats, Empak cst |
268 | n-type Si:P | [100] | 4″ | 200 | P/P | 0.05–0.15 {0.083–0.090} | SEMI Prime, 2Flats, Empak cst |
269 | n-type Si:P | [100–4° towards[011]] ±0.5° | 4″ | 8,000 | P/E | 0.05–0.15 | SEMI Prime, 1Flat, In Individual csts, Sealed in group of 10 wafers |
270 | n-type Si:P | [100–6° towards[001]] ±0.5° | 4″ | 8,000 | P/E | 0.05–0.15 | SEMI Prime, 1Flat, In Individual csts, Sealed in group of 2 & 6 wafers |
271 | n-type Si:P | [100–6° towards[011]] ±0.5° | 4″ | 8,000 | P/E | 0.05–0.15 | SEMI Prime, 1Flat, In Individual csts, Sealed in group of 2 wafers |
272 | n-type Si:Sb | [100] | 4″ | 400 | P/E | ~0.02 | SEMI Prime, 2Flats, Empak cst |
273 | n-type Si:Sb | [100–6° towards[110]] ±0.5° | 4″ | 525 | P/E | 0.015–0.020 | SEMI Prime, 2Flats, Empak cst |
274 | n-type Si:Sb | [100] | 4″ | 525 | P/E | 0.01–0.02 | SEMI Prime, 2Flats, Empak cst |
275 | n-type Si:P | [100] ±1° | 4″ | 300 | P/E | 0.007–0.020 | SEMI Prime, 2Flats, in Empak cassettes of 5 wafers |
276 | n-type Si:Sb | [100–4° towards[111]] ±0.5° | 4″ | 500 | P/E | 0.005–0.030 | SEMI Prime, 2Flats, in Empak cassettes of 5 & 9 wafers |
277 | n-type Si:As | [100] | 4″ | 545 | E/E | 0.002–0.004 | SEMI, 1Flat, Empak cst |
278 | n-type Si:As | [100] | 4″ | 525 | PlyAP/E | 0.001–0.005 | With layer of Al2O3, ~0.1μm or ~0.05μm thick, Wafers with a matrix of Polycrystalline Silicon dots, Empak cst, |
279 | [More Info] | ||||||
280 | n-type Si:As | [100] | 4″ | 525 | P/P | 0.001–0.005 {0.0031–0.0035} | SEMI Prime, 1Flat, Empak cst, TTV<3μm, Bow<10μm, Warp<20μm |
281 | n-type Si:As | [100] | 4″ | 525 | P/E | 0.001–0.005 | SEMI Prime, 2Flats, Empak cst, TTV<4μm, Bow<10μm, Warp<25μm |
282 | n-type Si:As | [100] | 4″ | 525 | P/E | 0.001–0.005 | SEMI Test (Chipped edge), 2Flats, Empak cst |
283 | n-type Si:As | [100] | 4″ | 525 | P/E | 0.001–0.005 | SEMI Prime, 2Flats, Empak cst, TTV<4μm, Bow<10μm, Warp<25μm |
284 | n-type Si:As | [100] | 4″ | 3,000 | P/E | 0.001–0.005 | Prime, 1Flat, Individual cst |
285 | n-type Si:Sb | [211] ±0.5° | 4″ | 1,500 ±15 | P/P | 0.01–0.02 | SEMI Prime, 1Flat, Empak cst, TTV<1μm |
286 | n-type Si:Sb | [211] ±0.5° | 4″ | 1,600 | C/C | 0.01–0.02 | SEMI Test, 1Flat, Empak cst, Wafers can be polished for additional fee |
287 | n-type Si:P | [111] | 4″ | 1,200 | P/P | 35–85 | SEMI Prime, 2Flats, Empak cst |
288 | n-type Si:P | [111] ±0.5° | 4″ | 1,500 | P/E | >20 {24–29} | SEMI Prime, 2Flats, TTV<5μm, in Empak cassettes of 2 wafers |
289 | n-type Si:P | [111] ±0.5° | 4″ | 250 | P/E | 18–25 | SEMI Prime, 2Flats, Empak cst |
290 | n-type Si:P | [111] ±0.5° | 4″ | 500 | P/P | 11–15 | SEMI Prime, 2Flats, Empak cst, Both–sides Epi Ready polished |
291 | n-type Si:P | [111] ±0.65° | 4″ | 500 | P/P | 1.3–2.5 | SEMI Prime, 2Flats, Empak cst |
292 | n-type Si:P | [111] ±0.5° | 4″ | 525 | P/E | 1–5 | SEMI Prime, 2Flats, Empak cst |
293 | n-type Si:P | [111] ±0.5° | 4″ | 1,000 | P/P | 1–50 | SEMI Prime, 1Flat, in Empak cassettes of 5 wafers. |
294 | n-type Si:P | [111] ±0.5° | 4″ | 1,000 | P/E | 1–10 | SEMI Prime, 2Flats, in Empak cassettes of 3, 3 & 4 wafers. |
295 | n-type Si:P | [111] ±0.5° | 4″ | 1,000 | P/E | 1–10 | SEMI Prime, 2Flats, in Empak cassettes of 7 wafers |
296 | n-type Si:P | [111] ±0.5° | 4″ | 10,000 | P/E | 1–100 {8.3–9.9} | Prime, NO Flats, Individual cst, groups of 5 wafers |
297 | n-type Si:P | [111] ±1.0° | 4″ | 525 | P/E | 0.3–50.0 | SEMI Prime, Empak cst |
298 | n-type Si:P | [111] ±1.0° | 4″ | 565 ±10 | E/E | 0.3–50.0 | SEMI Prime, Empak cst |
299 | n-type Si:P | [111] ±0.5° | 4″ | 400 | P/P | 0.1–0.5 | SEMI Prime, 2Flats, Empak cst |
300 | n-type Si:P | [111–4.0°] ±0.5° | 4″ | 525 | P/E | 0.1–1.0 | SEMI Prime, 2Flats, Empak cst |
301 | n-type Si:Sb | [111] | 4″ | 525 | P/E | 0.016–0.020 | SEMI Prime, 2Flats, Empak cst |
302 | n-type Si:Sb | [111–4°] ±0.5° | 4″ | 420 | P/EOx | 0.008–0.018 {0.0138–0.0151} | SEMI Prime, 2Flats, Empak cst, Epi edges, TTV<2μm, HBSD+LTO seal |
303 | n-type Si:As | [111–4°] ±0.5° | 4″ | 450 | P/E | 0.002–0.004 | Prime, Empak cst |
304 | n-type Si:As | [111–4°] ±0.5° | 4″ | 300 | P/E | 0.001–0.005 | SEMI Prime, 2Flats, Empak cst, Back Surface: Sand blasted |
305 | n-type Si:As | [111–4°] ±0.5° | 4″ | 325 | P/E | 0.001–0.005 | SEMI Prime, 2Flats, Empak cst, Back Surface: Sand blasted with LTO seal |
306 | n-type Si:As | [111–4°] ±0.5° | 4″ | 300 | P/E | 0.001–0.005 | SEMI Prime, 2Flats, Back–side Sand–blasted with LTO seal, in Empak cassettes of 7 wafers |
307 | n-type Si:As | [111–2°] ±0.5° | 4″ | 400 | P/EOx | 0.001–0.004 {0.0018–0.0036} | SEMI Prime, 1Flat, Epi edges, 0.5μm LTO, Empak cst |
308 | n-type Si:As | [111–4°] | 4″ | 525 | P/E | 0.001–0.005 | SEMI Prime, 2Flats, Empak cst |
309 | n-type Si:As | [111] ±0.5° | 4″ | 1,000 | P/E | 0.001–0.005 | SEMI Prime, 2Flats, Empak cst, TTV<4μm, Bow<10μm, Warp<20μm |
310 | n-type Si:As | [111–4°] | 4″ | ? | L/L | ? | SEMI TEST (in Opened Empak cst), 2Flats (2nd @ 45°) |
311 | n-type Si:P | [112] ±0.5° | 4″ | 500 | P/P | 11–15 | SEMI Prime, 1Flat, in Empak cassettes of 2 wafers |
312 | n-type Si:P | [113] ±0.5° | 4″ | 625 | P/E | 11–15 | SEMI Prime, Primary Flat @ [1,–1,0], SF 135° CW from PF, Individual cst |
313 | Si | ? | 4″ | ? | P/P | ? | SEMI TEST (Unsealed), Empak cst |
314 | Si | [110] ±0.5° | 4″ | 525 | C/C | ? | Empak cst |
315 | p-type Si:B | [100] | 4″ | 380 | OxP/EOx | 5–10 | SEMI Prime, 1Flat, Thermal Oxide 2.2±0.2μm thick |
316 | Si | ? | 4″ | ? | P/P | ? | SEMI TEST (Unsealed), Empak cst |
317 | Intrinsic Si:- | [110] | 4″ | 500 | P/P | FZ >20,000 | SEMI Prime, 2Flats @ [111] — Secondary 70.5° CCW from Primary, Empak cst |
318 | p-type Si:B | [110] | 4″ | 965 | P/P | 25–30 | SEMI Prime, 1 Flat @ [1,–1,0], in Empak |
319 | p-type Si:B | [110] | 4″ | 525 | P/E | 2–10 | PF<111> SF 109.5° |
320 | p-type Si:B | [100] | 4″ | 300 | P/E | 800–5,400 | SEMI Prime, 1Flat, Empak cst |
321 | p-type Si:B | [100] | 4″ | 1,000 | P/P | 200–700 | Prime, NO Flats, Empak cst |
322 | p-type Si:B | [100] | 4″ | 3,000 | P/E | 46–50 | SEMI Prime, 1Flat, Individual cst |
323 | p-type Si:B | [100] | 4″ | 300 | P/P | 10–15 | SEMI Prime, 2Flats, Empak cst |
324 | p-type Si:B | [100] | 4″ | 500 | P/P | 10–20 | SEMI Prime, 2Flats, Empak cst |
325 | p-type Si:B | [100] | 4″ | 3,000 | P/E/P | 10–15 | SEMI Prime, 1Flat, Individual cst |
326 | p-type Si:B | [100–6°] | 4″ | 250 | P/E | 8–12 | SEMI Prime, 2Flats, Empak cst |
327 | p-type Si:B | [100] | 4″ | 2,300 | P/P | 8–12 | SEMI Prime, 2Flats, Individual cst |
328 | p-type Si:B | [100–2°] | 4″ | 300 | P/E | 6–7 | SEMI Prime, 2Flats, Empak cst |
329 | p-type Si:B | [100] | 4″ | 1,000 | P/E | 6–7 | SEMI Prime, 2Flats, Empak cst |
330 | p-type Si:B | [100] | 4″ | 1,600 | P/P | ~6 | SEMI Prime, 1Flat, Individual cst |
331 | p-type Si:B | [100–6°] | 4″ | 525 | P/E | 4–6 | SEMI Prime, 2Flats, Empak cst |
332 | p-type Si:B | [100] | 4″ | 350 | P/E | 2–3 | Prime, NO Flats, Empak cst |
333 | p-type Si:B | [100] | 4″ | 200 | P/P | 1–20 | SEMI Prime, 1Flat, Empak cst |
334 | p-type Si:B | [100] | 4″ | 250 | P/E | 1–10 | SEMI Prime, 2Flats, Empak cst |
335 | p-type Si:B | [100] | 4″ | 300 | P/E/P | 1–10 | SEMI Prime, 2Flats, Empak cst |
336 | p-type Si:B | [100–10°] | 4″ | 300 | P/E | 1–10 | SEMI Prime, 2Flats, Empak cst |
337 | p-type Si:B | [100] | 4″ | 500 | P/P | 1–10 | SEMI Prime, 2Flats, Empak cst |
338 | p-type Si:B | [100–6°] | 4″ | 525 | P/E | 1–100 | SEMI Prime, 1Flat, Empak cst |
339 | p-type Si:B | [100] | 4″ | 1,200 | P/P | 1–15 | SEMI Prime, 2Flats, Empak cst |
340 | p-type Si:B | [100] | 4″ | 350 | P/E | 0.074–0.075 | SEMI Prime, 2Flats, Empak cst |
341 | p-type Si:B | [100–6°] | 4″ | 525 | P/E | 0.0042–0.0047 | SEMI Prime, 2Flats, Empak cst |
342 | p-type Si:B | [100] | 4″ | 2,000 | P/P | 0.001–0.005 | SEMI Prime, 2Flats, Individual cst |
343 | p-type Si:B | [111] | 4″ | 1,000 | P/P | 8–9 | SEMI Prime, 1Flat, Empak cst |
344 | p-type Si:B | [111] | 4″ | 500 | P/P | 6–10 | SEMI Prime, 1Flat, Empak cst |
345 | p-type Si:B | [111–3°] | 4″ | 300 | P/E | 3–4 | SEMI Prime, 2Flats, Empak cst |
346 | p-type Si:B | [111–4°] | 4″ | 525 | P/E | 1.5–6.0 | SEMI Prime, 1Flat, Empak cst |
347 | p-type Si:B | [111] ±0.5° | 4″ | 1,500 | P/P | 1–10 | SEMI Prime, 1Flat, Empak cst, TTV<5μm |
348 | p-type Si:B | [111–3°] | 4″ | 400 | P/E | 0.015–0.018 | SEMI Prime, 1Flat, Empak cst |
349 | p-type Si:B | [111] | 4″ | 525 | P/E | 0.005–0.006 | SEMI Prime, 1Flat, Empak cst |
350 | p-type Si:B | [111] | 4″ | 300 | P/E | 0.002–0.003 | SEMI Prime, 1Flat, Empak cst |
351 | p-type Si:B | [111–1.5°] | 4″ | 525 | P/E | 0.002–0.004 | SEMI Prime, 1Flat, Empak cst |
352 | p-type Si:B | [111–3°] | 4″ | 525 | P/E | 0.002–0.004 | SEMI Prime, 1Flat, Empak cst |
353 | p-type Si:B | [111] | 4″ | 300 | P/E | 0.001–0.005 | SEMI Prime, 1Flat, Empak cst |
354 | n-type Si:P | [110] ±0.5° | 4″ | 525 | P/P | 20–80 | SEMI Prime, 2Flats @ [111] — Secondary 70.5° CW from Primary, Empak cst |
355 | n-type Si:P | [110] | 4″ | 1,000 | P/E | 12–15 | ?? |
356 | n-type Si:P | [100] | 4″ | 200 | P/P | 49–57 | SEMI Prime, 2Flats, Empak cst |
357 | n-type Si:P | [100] | 4″ | 400 | P/E | 32–70 | SEMI Prime, 2Flats, Empak cst |
358 | n-type Si:P | [100] | 4″ | 350 | P/P | 20–23 | P/E400 P/P350μm |
359 | n-type Si:P | [100] | 4″ | 400 | P/P | 17–19 | Prime, NO Flats, Empak cst |
360 | n-type Si:P | [100] | 4″ | 700 | P/E | 14–18 | Prime, NO Flats, Empak cst |
361 | n-type Si:P | [100] | 4″ | 250 | P/E | 11–13 | SEMI Prime, 2Flats, Empak cst |
362 | n-type Si:P | [100] | 4″ | 400 | P/P | 10–18 | SEMI Prime, 2Flats, Empak cst |
363 | n-type Si:P | [100] | 4″ | 525 | P/E | 5–10 | SEMI Prime, 1Flat, Empak cst |
364 | n-type Si:P | [100] | 4″ | 500 | P/P | 4–6 | SEMI Prime, 2Flats, Empak cst |
365 | n-type Si:P | [100] | 4″ | 259 | P/P | 3–5 | SEMI Prime, 2Flats, Empak cst |
366 | n-type Si:P | [100] | 4″ | 100 | P/P | 1–10 | SEMI Prime, 1Flat, Empak cst |
367 | n-type Si:P | [100] | 4″ | 400 | P/E | 1–6 | SEMI Prime, 2Flats, Empak cst |
368 | n-type Si:P | [100] | 4″ | 525 ±10 | P/P | 1–100 | SEMI Prime, 1Flat, Empak cst, TTV<5μm |
369 | n-type Si:P | [100–4°] | 4″ | 525 | P/E/P | 1–10 | SEMI Prime, 2Flats, Empak cst |
370 | n-type Si:P | [100–2°] | 4″ | 525 | P/E | >1 | SEMI Prime, 2Flats, Empak cst |
371 | n-type Si:P | [100] | 4″ | 900 | P/P | 1–5 | SEMI Prime, 1Flat, Empak cst |
372 | n-type Si:P | [100] | 4″ | 1,000 | P/P | 1–20 | SEMI Prime, 2Flats, Empak cst |
373 | n-type Si:P | [100] | 4″ | 2,000 | P/P | 1–10 | SEMI Prime, 2Flats, Individual cst |
374 | n-type Si:P | [100] | 4″ | 2,500 | P/P | 1–100 | SEMI Prime, 2Flats, Individual cst |
375 | n-type Si:P | [100] | 4″ | 3,000 | P/EE | 1–20 | SEMI Prime, 1Flat, Individual cst |
376 | n-type Si:P | [100] | 4″ | 6,000 | P/P | 1–20 | SEMI Prime, 2Flats, Individual cst |
377 | n-type Si:P | [100] | 4″ | 10,000 | P/E | 1–100 | SEMI Prime, 2Flats, Individual cst |
378 | n-type Si:P | [100] | 4″ | 15,000 | P/E | 1–100 | SEMI Prime, 2Flats, Individual cst |
379 | n-type Si:P | [100] | 4″ | 300 | P/E | 0.29–0.31 | SEMI Prime, 2Flats, Empak cst |
380 | n-type Si:Sb | [100] | 4″ | 450 | P/E | ~0.03 | SEMI Prime, 1Flat, Empak cst |
381 | n-type Si:Sb | [100] | 4″ | 400 | P/E | ~0.02 | SEMI Prime, 2Flats, Empak cst |
382 | n-type Si:Sb | [100] | 4″ | 525 | P/E | 0.020–0.022 | SEMI Prime, 2Flats, Empak cst |
383 | n-type Si:Sb | [100] | 4″ | 1,000 | P/E | 0.015–0.020 | SEMI Prime, 2Flats, Empak cst |
384 | n-type Si:Sb | [100] | 4″ | 600 | P/E | 0.01–0.03 | Strange Flats |
385 | n-type Si:Sb | [100–4°] | 4″ | 1,500 | P/E/P | 0.005–0.030 | SEMI Prime, 2Flats, Empak cst |
386 | n-type Si:As | [100] | 4″ | 525 | P/E | 0.0025–0.0035 | SEMI Prime, 2Flats, Empak cst |
387 | n-type Si:Sb | [100] | 4″ | 1,500 | P/E/P | 0.001–0.030 | SEMI Prime, 2Flats, Empak cst |
388 | n-type Si:P | [111] | 4″ | 1,500 | P/E | >20 | SEMI Prime, 2Flats, Empak cst |
389 | n-type Si:P | [111] | 4″ | 250 | P/E | 18–25 | SEMI Prime, 2Flats, Empak cst |
390 | n-type Si:P | [111] | 4″ | 250 | P/E | 18–25 | SEMI Prime, 2Flats, Empak cst |
391 | n-type Si:P | [111] | 4″ | 280 | P/E | 2–5 | SEMI Prime, 2Flats, Empak cst |
392 | n-type Si:P | [111] | 4″ | 2,500 | P/P | 2.0–2.5 | SEMI Prime, 2Flats, Individual cst |
393 | n-type Si:P | [111] | 4″ | 280 | P/E | 1–2 | SEMI Prime, 2Flats, Empak cst |
394 | n-type Si:P | [111] | 4″ | 350 | P/P | 1–20 | SEMI Prime, 2Flats, Empak cst |
395 | n-type Si:P | [111–4°] | 4″ | 525 | P/E | 1–15 | SEMI Prime, 1Flat, Empak cst |
396 | n-type Si:P | [111–1.5°] | 4″ | 525 | P/E | 1–2 | SEMI Prime, 2Flats, Empak cst |
397 | n-type Si:P | [111] | 4″ | 1,000 | P/E | 1–10 | SEMI Prime, 2Flats, Empak cst |
398 | n-type Si:P | [111] | 4″ | 1,000 | P/E | 1–10 | SEMI Prime, 2Flats, Empak cst |
399 | n-type Si:Sb | [111–4°] | 4″ | 450 | P/E | 0.025–0.045 | SEMI Prime, 2Flats, Empak cst |
400 | n-type Si:Sb | [111–2.5°] | 4″ | 625 | P/E | 0.021–0.023 | SEMI Prime, 2Flats, Empak cst |
401 | n-type Si:Sb | [111] | 4″ | 525 | P/E | 0.016–0.020 | SEMI Prime, 2Flats, Empak cst |
402 | n-type Si:Sb | [111–2°] | 4″ | 380 | P/E | 0.008–0.018 | SEMI Prime, 1Flat, Empak cst |
403 | n-type Si:Sb | [111–3°] | 4″ | 400 | P/E | 0.008–0.018 | SEMI Prime, 1Flat, Empak cst |
404 | n-type Si:Sb | [111–3°] | 4″ | 400 | P/E | 0.005–0.018 | SEMI Prime, 2Flats, Empak cst |
405 | n-type Si:As | [111] | 4″ | 450 | P/E | 0.004–0.005 | SEMI Prime, 1Flat, Empak cst |
406 | n-type Si:As | [111–3°] | 4″ | 400 | P/E | 0.001–0.005 | SEMI Prime, 1Flat, Empak cst |
407 | n-type Si:As | [111–4°] | 4″ | 525 | P/E | 0.001–0.005 | SEMI Prime, 2Flats, Empak cst |
408 | n-type Si:As | [111–4°] | 4″ | 525 | P/E | 0.001–0.005 | SEMI Prime, 1Flat, Empak cst |
409 | n-type Si:As | [111–2.5°] | 4″ | 525 | P/E | 0.001–0.005 | SEMI Prime, 1Flat, Empak cst |
410 | n-type Si:As | [111–3°] | 4″ | 525 | P/E | 0.001–0.005 | SEMI Prime, 2Flats, Empak cst |