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5″ SI Wafers (5 inch Si wafers)

5″ SI Wafers (5 inch Si wafers), Surface – P = Polished, E = Etched, C = AsCut, Ox = Oxide (on that layer); Material – CZ unless noted, Items sold in quantities of 25, unless noted. Please email us to check the availability , price and  lead time etc.

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5″ SI Wafers (5 inch Si wafers)

Note: Surface – P = Polished, E = Etched, C = AsCut, Ox = Oxide (on that layer); Material – CZ unless noted

Note: Items sold in quantities of 25, unless noted. Please email us to check the availability , price and  lead time etc.

Item Material Orient. Diam Thck Surf. Resistivity Comment
(mm) (μm) Ωcm
1 p-type Si:B [100] 5″ 762 P/P FZ 2,000–3,000 SEMI Prime, 1Flat, Empak cst, TTV<2μm, Bow<10μm, Warp<20μm
2 p-type Si:B [100] 5″ 889 ±13 P/E FZ >1,000 SEMI Prime, 1Flat, Empak cst
3 p-type Si:B [100] 5″ 920 ±10 E/E FZ >1,000 Empak cst
4 p-type Si:B [100] 5″ 920 ±10 E/E FZ >1,000 Warp measured <8μm, Empak cst
5 n-type Si:P [100] 5″ 400 P/E FZ 7,000–14,300 SEMI Prime, 1Flat, Empak cst, Bow/Warp<20μm
6 n-type Si:P [100] 5″ 400 P/E FZ 7,000–14,300 SEMI Prime, 1Flat, Bow/Warp<20μm
7 n-type Si:P [100] 5″ 350 P/E FZ 5,000–10,000 SEMI Prime, 1Flat, Empak cst, Bow/Warp<20μm
8 n-type Si:P [100] 5″ 350 P/E FZ 5,000–10,000 SEMI Prime, 1Flat, Bow/Warp<20μm, in Empak cassettes of 5 wafers
9 n-type Si:P [100] 5″ 762 E/E FZ 5,000–11,000 SEMI, 1Flat, Empak cst
10 n-type Si:P [111] ±0.1° 5″ 200 ±15 BROKEN FZ >3,000 Broken L/L wafers, in 2 pieces
11 n-type Si:P [111] 5″ 300 ±15 P/E FZ 1,000–3,000 SEMI Prime, in hard cassettes of 8 wafers
12 p-type Si:B [100] 5″ 600 ±10 E/E 2.0–3.5 SEMI, 1Flat, coin roll
13 p-type Si:B [100] 5″ 525 P/E 1–100 Silicon rings. 5″ outside diameter and 4″ inside diameter to hold 4″ wafers
14 p-type Si:B [100] 5″ 700 ±8 P/P 1–25 SEMI Prime, Empak cst, TTV<1μm
15 p-type Si:B [100] 5″ 750 ±8 P/P 1–25 SEMI Prime, Empak cst, TTV<1μm
16 p-type Si:B [100] 5″ 990 ±8 P/P 1–25 SEMI Prime, Empak cst, TTV<1μm
17 p-type Si:B [100] 5″ 525 P/EOx 0.002–0.004 {0.0031–0.0035} SEMI Prime, 1Flat, Striations–Free, TTV<5μm, Back–Side LTO seal 0.50±0.05μm thick, in Empak cassettes of 7 wafers each
18 p-type Si:B [100] 5″ P/EOx SEMI Test, 2Flats, open Empak cst
19 p-type Si:B [100] 5″ 710 E/E RTP, One SEMI Flat, in Open Empak cst
20 n-type Si:P [100] 5″ 762 ±12 P/P 5–35 SEMI Prime, 1Flat, Empak cst, Ultra–Flat, TTV<1μm, Bow<4.5μm, Warp<10μm
21 n-type Si:P [100] 5″ 762 C/C 5–35 SEMI, 1Flat, Empak cst
22 n-type Si:P [100] 5″ 925 C/C 5–35 SEMI Prime, 1Flat, packed in Empak cst
23 n-type Si:P [100] ±1° 5″ 1,200 P/E 1–25 SEMI Prime, SEMI notch, Empak cst
24 n-type Si:Sb [100] 5″ 525 ±15 P/E 0.007–0.020 {0.0157–0.1920} SEMI Prime, Edges beveled at 11°, Empak cst
25 n-type Si:As [100] 5″ 625 P/E 0.001–0.007 SEMI TEST, 2Flats, Empak cst
26 n-type Si:As [100] 5″ 625 P/E 0.001–0.007 SEMI TEST, 2Flats, Empak cst
27 n-type Si:Sb [100] ±1° 5″ 1,200 ±10 P/E 0.001–0.025 SEMI Prime, SEMI notch, TTV<1μm Empak cst
28 n-type Si:As [100] 5″ E/E SEMI, 1Flat, in opened Empak cst
29 n-type Si:Sb [100] 5″ E/E SEMI 2Flats (2nd @135°), in opened Empak cst
30 n-type Si:Sb [111–3.0°] ±0.5° 5″ 625 P/E 0.015–0.020 {0.0152–0.0185} SEMI Prime, 2Flats, Empak cst
31 Si:? [???] 5″ ? P/E ? SEMI Test, 1Flat, Empak cst
32 Si:? [???] 5″ ? P/E ? SEMI TEST, 1Flat, Empak cst
33 n-type Si:? [100] 5″ ? P/EOx ? SEMI TEST, 2Flats (SF @ 180°), Back–side LTO seal, Empak cst
34 Si:? [100] 5″ ? P/E ? SEMI Test, 1Flat, Empak cst
35 n-type Si:? [100] 5″ ? P/E ? SEMI Test, 2Flats (2nd @ 180°), Empak cst
36 n-type Si:As [100] 5″ 625 OxP/EOx 0.001–0.007 SEMI Prime, 2Flats, Thermal Oxide 3.5±0.5µm thick, Empak cst
37 n-type Si:As [100] 5″ 625 OxP/EOx 0.001–0.007 SEMI Prime, 2Flats, Thermal Oxide 3.5±0.5μm thick, in Empak cassettes of 5 & 10 wafers
38 n-type Si:P [100] 5″ 770 P/P 5–35 SEMI Prime, 1Flat(42.5mm), LaserMark, TTV<1μm, Empak cst

 

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