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Wafers

InP – Indium Phosphide

InP – Indium Phosphide, Surface – P = Polished, E = Etched, C = AsCut, Ox = Oxide (on that layer). Please email us to check the availability etc.

Category: Wafers Tag: III-V/II-VI

Description

Description

InP – Indium Phosphide

Note: Surface – P = Polished, E = Etched, C = AsCut, Ox = Oxide (on that surface)

Note: Please email us to check the availability , price and lead time etc.

Item	Material	Orient.	Diam	Thck	Surf.	Resistivity	Nc	Mobil	EPD	Comment
Item	Material	Orient.	(mm)	(μm)	Surf.	Ωcm	a/cm³	cm²/Vs	/cm²	Comment
1	InP:S+Zn	[100]	3″	500	P/E	Sn n-type				EJ Flats MECHANICAL GRADE
2	InP:S+Zn	[100]	2″			0.026		45		2 Flats; (1 ingot: 60mm)
3	InP:S+Zn	[100]	50mm	400	P/E	2.60E-02	(4.4-4.9)E18	46	<300	SEMI Flats; Epi Ready
4	SI InP:Fe	[100]	50.7	350	P/E	2.90E+07	1.10E+08	2,000	<2.3E4	EJ Flats; Epi Ready
5	SI InP:Fe cube	[100]	8×4	3,500	P/P	8.10E+07	3.10E+07	2,460	<6.8E4	All sides polished, 8×4mm is (001), 4×3.5mm is (110), 8×3.5mm is (1,-1,0)
6	SI InP:Fe cube	[100]	8×4	3,500	P/P	2.50E+07	1.30E+08	2,330	6.80E+04	All sides polished, 8.0×4.0mm is (001), 4.0×3.5mm is (110), 8.0×3.5mm is (1,-1,0)
7	undoped InP:- Seed crystal	[100]	16×16	75,000		n-type				Seed crystal sides are [011] & {01-1]; 92g
8	undoped InP:-Seed crystal	[100]	8×8	75,000		n-type				Seed crystal sides are [011] & {01-1]; 23g
9	n-type InP:S	[100]	2″			0.0007-0.0004				(1 ingot: 28.58mm)
10	n-type InP:S	[100]	2″	2,000	P/E	0.0011	3.60E+18	1,530	<1.1E4	SEMI Flats; Epi Ready
11	n-type InP:S	[100]	2″	380	P/E	0.0011	4.00E+18	1,360	<1.5E4	SEMI Flats; Epi Ready
12	n-type InP:S	[100]	2″	400	P/P	(0.00060-0.00094)	(5.1-8.5)E18	1,250-1,500	<6,200	SEMI Flats; Epi Ready
13	InP:S+Zn	[100]	2″	400	P/E	2.03E-02	3.80E+17	810	<4.2E4	SEMI Flats; Epi Ready
14	InP:S+Zn	[100]	2″	400	P/E	0.026	5.30E+18	45	<1,000	SEMI Flats; Epi Ready
15	SI InP:Fe	[100]	2″	450	P/E	3.50E+07	8.30E+07	2,110	<5E4	SEMI Flats; Epi Ready
16	SI InP:Fe	[100]	2″	300	P/E	1.35E+07	3.03E+08	1,669	<5.4E4	SEMI Flats; Epi Ready
17	n-type InP:S	[100]	2″	350	P/E	1.15E-03	3.30E+18	1,620	<2E4	SEMI Flats; 1mm chip near secondary flat
18	n-type InP:S	[100]	2″	350	P/E	8.89E-04	4.96E+18	1,418	<2.9E4	EJ Flats; Epi Ready
19	n-type InP:S	[100]	2″	400	P/E	7.72E-04	5.77E+18	1,408	<10,000	SEMI Flats; Epi Ready
20	n-type InP:S	[100]	2″	350	P/E	8.40E-04	6.12E+18	1,410	<5,000	SEMI Flats; Epi Ready
21	n-type InP:S	[100]	2″	400	P/E	5.70E-04	8.24E+18	1,330	<10,000	SEMI Flats; Epi Ready
22	n-type InP:S	[100]	2″	400	P/E	8.08E-04	9.18E+18	1,110	<5E4	SEMI Flats; Epi Ready
23	n-type InP:S	[100]	2″	400	P/E	7.08E-04	9.30E+18	950	<1,000	EJ Flats; Epi Ready
24	n-type InP:S	[115]	2″	400	P/E	1.08E-03	4.07E+18	1,416	<3.7E4	Epi Ready

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