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3″ Si Wafers (3 inch Si wafers)

3″ Si Wafers (3 inch Si wafers), Surface – P = Polished, E = Etched, C = AsCut, Ox = Oxide (on that layer); Material – CZ unless noted, Items sold in quantities of 25, unless noted. Please email us to check the availability , price and  lead time etc.

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3″ Si Wafers (3 inch Si wafers)

Note: Surface – P = Polished, E = Etched, C = AsCut, Ox = Oxide (on that layer); Material – CZ unless noted

Note: Items sold in quantities of 25, unless noted. Please email us to check the availability , price and  lead time etc.

Item Material Orient. Diam Thck Surf. Resistivity Comment
(mm) (μm) Ωcm
1 P/B [100] 3″ 380um P/E 0-100 ohm-cm Test Grade with flat
2 N/Ph [100] 3″ 380um P/E 0-100 ohm-cm Test Grade with flat
3 ANY [ANY] 3″ 380um P/E ANY Mech Grade for Spin Coating
4 P/B [100] 3″ 380um P/E 1-10 ohm-cm Prime Grade 2 Flats
5 N/Ph [100] 3″ 380um P/E 1-10 ohm-cm Prime Grade 2 Flats
6 N/Ph [100] 3″ 500um P/E 3.6-5.4 ohm-cm Test Grade with flat
7 P/B [100] 3″ 380um P/E 0.001-0.005 ohm-cm Prime
8 p-type Si:B [110] ±0.5° 3″ 325 P/E FZ 100–200 SEMI Prime, 2Flats, Empak cst
9 p-type Si:B [110] ±0.5° 3″ 325 P/E FZ 100–200 SEMI Prime, 2Flats, Empak cst
10 p-type Si:B [100] 3″ 160 ±10 P/P FZ 0.5–10.0 SEMI Test, 1Flat, Soft cst, Scratched, unsealed defects. Can be repolished for additional fee
11 p-type Si:B [100] ±1° 3″ 320 P/P FZ 0.5–10.0 SEMI Prime, Empak cst, TTV<1μm
12 p-type Si:B [111] ±0.5° 3″ 380 P/E FZ 8,000–10,000 SEMI TEST (has scratches), 1Flat, in hard cst
13 p-type Si:B [111] ±0.5° 3″ 475 P/E FZ >4,400 SEMI Prime, 1Flat, Empak cst, TTV<5μm
14 p-type Si:B [111] ±0.5° 3″ 475 P/E FZ >4,400 SEMI Prime, 1Flat, Empak cst, TTV<5μm
15 p-type Si:B [111] ±0.25° 3″ 400 P/E FZ >100 SEMI Prime, 1Flat, Empak cst
16 n-type Si:P [100] 3″ 265 P/E FZ >10,000 SEMI Prime, Empak cst, Backside Acid Etched.
17 n-type Si:P [100] 3″ 380 P/P FZ 7,000–18,000 SEMI Prime, 2Flats, Empak cst
18 n-type Si:P [100] 3″ 380 P/P FZ 5,000–8,000 SEMI Prime, 2Flats, Empak cst
19 n-type Si:P [100] ±0.1° 3″ 380 P/E FZ >5,000 SEMI Prime, 1Flat, Empak cst
20 n-type Si:P [100] ±0.1° 3″ 380 P/E FZ >5,000 SEMI Prime, 1Flat, Empak cst
21 n-type Si:P [100] 3″ 381 P/P FZ 100–500 SEMI Prime, 2Flats, Empak cst
22 n-type Si:P [100] 3″ 381 P/P FZ 100–500 SEMI Prime, 2Flats, Empak cst
23 n-type Si:P [100] 3″ 525 E/E FZ 100–500 SEMI Prime, 2Flats, Empak cst
24 n-type Si:P [100] 3″ 300 P/P FZ 45–52 SEMI Prime, 2Flats, Empak cst
25 n-type Si:P [100] 3″ 300 P/P FZ 45–52 SEMI Prime, 2Flats, in Empak cassettes of 3 wafers
26 n-type Si:P [100] 3″ 380 P/E FZ 45–52 SEMI Prime, 2Flats, Empak cst
27 n-type Si:P [100] 3″ 300 P/P FZ 0.8–2.5 SEMI Prime, 2Flats, Empak cst
28 n-type Si:P [100] 3″ 300 P/E FZ 0.8–2.5 SEMI Prime, 2Flats, Empak cst, Back side originally polished but has scratches, Front is Epi–Ready
29 n-type Si:P [211] ±0.5° 3″ 380 P/P FZ >3,000 SEMI Prime, 1Flat, Empak cst
30 n-type Si:P [211–5°] ±0.5° 3″ 508 P/P FZ >50 Prime, 1Flat, Empak cst
31 n-type Si:P [211–5°] ±0.5° 3″ 508 P/P FZ 25–75 Prime, 1Flat, Empak cst
32 n-type Si:P [211–5°] ±0.5° 3″ 508 P/P FZ 25–75 Prime, 1Flat, Empak cst
33 n-type Si:P [211–5°] ±0.5° 3″ 508 P/P FZ 25–75 Prime, 1Flat, Empak cst
34 n-type Si:P [211–5°] ±0.5° 3″ 508 P/P FZ 25–75 Prime, 1Flat, Empak cst
35 n-type Si:P [211–5°] ±0.5° 3″ 508 P/P FZ 25–75 Prime, 1Flat, Empak cst
36 n-type Si:P [211] ±0.5° 3″ 508 P/P FZ 25–75 Prime, 1Flat, Empak cst
37 n-type Si:P [211] ±0.5° 3″ 1,016 P/P FZ 25–75 Prime, 1Flat, Empak cst
38 n-type Si:P [211] ±0.5° 3″ 1,016 P/P FZ 25–75 Prime, 1Flat, Empak cst
39 n-type Si:P [211] ±0.5° 3″ 1,016 P/P FZ 25–75 SEMI TEST, 1Flat, Empak cst
40 n-type Si:P [111] ±0.5° 3″ 415 ±15 E/E FZ 10,000–12,000 SEMI Prime, 1Flat, in Empak, Lifetime>1,500μs
41 n-type Si:P [111] ±0.5° 3″ 415 ±15 BROKEN FZ 10,000–12,000 Broken E/E wafers, in two pieces, 1Flat, Lifetime>1,500μs,
42 n-type Si:P [111] ±0.5° 3″ 415 ±15 E/E FZ 5,000–7,400 SEMI Prime, 1Flat, in Empak, MCC Lifetime>1,500μs
43 n-type Si:P [111] ±0.5° 3″ 675 P/P FZ >5,000 SEMI Prime, 1Flat, Empak cst, TTV<4μm, Lifetime>800μs
44 n-type Si:P [111] ±0.5° 3″ 1,000 P/E FZ >5,000 SEMI Prime, 2Flats, Empak cst
45 n-type Si:P [111] ±0.5° 3″ 380 P/E FZ 4,000–8,000 SEMI Prime, 1Flat, in hard cassettes of 1 & 2 wafers
46 n-type Si:P [111] ±0.5° 3″ 380 BROKEN FZ 4,000–8,000 Broken P/E wafer, 1Flat, Soft cst
47 n-type Si:P [111] ±0.5° 3″ 380 P/P FZ 3,000–5,000 SEMI Prime, 1Flat, Empak cst
48 n-type Si:P [111] ±0.5° 3″ 380 P/E FZ 3,000–5,000 SEMI Prime, 1Flat, in Empak, Lifetime>1,000μs,
49 n-type Si:P [111] ±0.5° 3″ 415 ±15 E/E FZ 2,000–5,000 SEMI Prime, 1Flat, in Empak, Lifetime>1,500μs
50 n-type Si:P [112–3° towards[11–1]] ±0.5° 3″ 508 P/P FZ 50–150 SEMI TEST, 1Flat, Empak cst
51 Intrinsic Si:- [100] 3″ 350 P/P FZ >20,000 SEMI Prime, 1Flat, Empak cst
52 Intrinsic Si:- [100] 3″ 380 P/P FZ >20,000 SEMI Prime, 1Flat, Empak cst, TTV<10μm, Bow/Warp<25μm
53 Intrinsic Si:- [100] 3″ 380 P/P FZ >20,000 SEMI Prime, 1Flat, Empak cst, TTV<10μm, Bow/Warp<25μm
54 Intrinsic Si:- [100] 3″ 380 P/P FZ >20,000 SEMI Prime, 1Flat, Empak cst, TTV<10μm, Bow/Warp<25μm
55 Intrinsic Si:- [100] 3″ 380 P/E FZ >20,000 SEMI Prime, 1Flat, Empak cst
56 Intrinsic Si:- [100] 3″ 380 P/E FZ >16,000 SEMI Prime, 1Flat, Empak cst
57 Intrinsic Si:- [100] 3″ 200 P/P FZ >10,000 SEMI Prime, 1Flat, Empak cst
58 Intrinsic Si:- [100] 3″ 275 P/P FZ >10,000 SEMI Prime, 1Flat, Empak cst
59 Intrinsic Si:- [100] 3″ 275 P/P FZ >10,000 SEMI Prime, 1Flat, Empak cst
60 Intrinsic Si:- [100] 3″ 350 P/P FZ >10,000 SEMI Prime, 1Flat, Empak cst
61 Intrinsic Si:- [100] 3″ 350 P/P FZ 10,000–15,000 SEMI Prime, 1Flat, Empak cst, in cst of 15 & 14 wafers.
62 Intrinsic Si:- [100] 3″ 380 P/E FZ 10,000–15,000 SEMI Prime, 1Flat, Empak cst, Lifetime>1,200μs, Ox<1E16/cc, C<1E16/cc.
63 Intrinsic Si:- [100] 3″ 380 P/E FZ >10,000 SEMI Prime, 1Flat, Lifetime>1,000μs, hard cst
64 Intrinsic Si:- [100] 3″ 500 P/E FZ >10,000 SEMI Prime, 1Flat, Empak cst
65 Intrinsic Si:- [100] 3″ 700 P/P FZ >10,000 Test, scratrches and stains. Can be repolished for additional fee, 1Flat, Empak cst, TTV<5μm
66 Intrinsic Si:- [111] ±0.5° 3″ 380 P/P FZ >20,000 SEMI Prime, 1Flat, Empak cst
67 Intrinsic Si:- [111] ±0.5° 3″ 380 P/E FZ >20,000 SEMI Prime, 1Flat, Empak cst
68 Intrinsic Si:- [111] ±0.5° 3″ 1,400 C/C FZ 8,000–20,000 {8,000–80,000} SEMI, 1Flat, Lifetime>800μm, in hard cassettes of 3 & 5 wafers
69 Intrinsic Si:- [112] 3″ 380 P/P FZ >5,000 SEMI Prime, 1Flat, Lifetime>2,000μs, in Empak cassettes of 4 wafers
70 p-type Si:B [110] ±0.5° 3″ 380 P/E >100 SEMI Prime, Primary Flat @ [111], Secondary @ [111] 70.5° from Primary, in hard cassettes of 1, 2 & 2 wafers
71 p-type Si:B [110] ±0.5° 3″ 380 P/E >60 SEMI Prime, Primary Flat @ [111], Secondary @ [111] 70.5° from Primary, Empak cst
72 p-type Si:B [110] ±0.5° 3″ 860 E/E 15–50 SEMI, 2Flats, Empak cst
73 p-type Si:B [110] ±0.5° 3″ 600 P/P 8–12 SEMI Prime, 1Flat, in Empak cassettes of 5 wafers
74 p-type Si:B [110] ±0.25° 3″ 380 P/E 2–4 SEMI Prime, 2Flats @[111] 109.5° apart, Empak cst
75 p-type Si:B [110] ±0.5° 3″ 360 P/P 1–10 SEMI Prime, 2Flats, TTV<1μm, 1–2 weeks ARO o repolish
76 p-type Si:B [110] ±0.5° 3″ 381 P/E 0.085–0.115 SEMI Prime, Primary Flat @ [111]±0.5°, Secondary @ [111] 109.5° CW from Primary
77 p-type Si:B [110] ±0.5° 3″ 381 P/E 0.085–0.115 SEMI Prime, Primary Flat @ [111]±0.5°, Secondary @ [111] 109.5° CW from Primary, in Epak cassettes of 6, 7 & 7 wafers
78 p-type Si:B [110] ±0.3° 3″ 381 P/E 0.0448–0.0672 SEMI Prime, 2Flats, Primary @ [111], Secondary @ [111] 109.5±2° CW from Primary, hard cst
79 p-type Si:B [110] ±0.3° 3″ 381 P/E 0.0448–0.0672 SEMI Prime, 2Flats, Primary @ [111], Secondary @ [111] 109.5±2° CW from Primary, in hard cassettes of 5 wafers
80 p-type Si:B [110] ±0.5° 3″ 381 P/E 0.003–0.005 SEMI Prime, Empak cst, Primary Flat @ [111]±0.5°, Secondary Flat @ [111] (109.5±2° CW from Primary)
81 p-type Si:B [100] 3″ 600 P/P >20 SEMI Prime, 1Flat, TTV<1.4μm, Empak cst
82 p-type Si:B [100] 3″ 280 ±5 P/P 10–20 SEMI Prime, Empak cst
83 p-type Si:B [100] 3″ 275 P/P 5–10 SEMI Prime, 2Flats, TTV<5μm, Empak cst
84 p-type Si:B [100] 3″ 380 P/E 5–10 SEMI Prime, 2Flats, Empak cst, TTV<5μm
85 p-type Si:B [100] 3″ 380 P/E 5–10 SEMI, 2Flats, Empak cst
86 p-type Si:B [100] 3″ 350 P/P 3–4 SEMI Prime, 2Flats, Empak cst
87 p-type Si:B [100] ±1° 3″ 300 P/P 1–20 SEMI Prime, 1Flat, Empak cst
88 p-type Si:B [100] 3″ 375 P/P 1–100 {1.6–5.5} SEMI Prime, 2Flats, TTV<4μm, Empak cst
89 p-type Si:B [100] ±1° 3″ 375 P/P 1–10 SEMI Prime, Empak cst
90 p-type Si:B [100] ±1° 3″ 381 P/P 1–10 SEMI Prime, Empak cst, TTV<1μm
91 p-type Si:B [100] ±1° 3″ 381±50µm P/E 1–10 SEMI Prime, 2Flats, Empak cst
92 p-type Si:B [100] 3″ 500 P/P 1–30 SEMI Prime, 2Flats, Empak cst, Both Sides Epi–Ready Polish
93 p-type Si:B [100] 3″ 500 P/P 1–100 SEMI Prime, 2Flats, TTV<1μm, Empak cst
94 p-type Si:B [100] 3″ 500 P/E 1–10 SEMI Prime, 2Flats, Empak cst
95 p-type Si:B [100] 3″ 725 C/C 1–100 SEMI Prime, 1Flat, Empak cst, TTV<1μm
96 p-type Si:B [100] 3″ 1,500 P/P 1–20 Prime, 2Flats, Individual cst
97 p-type Si:B [100] 3″ 5,000 P/E 1–20 {6–8} SEMI Prime, 2Flats, Individual cst
98 p-type Si:B [100] 3″ 10,000 P/E 1–20 SEMI Prime, 2Flats, Individual cst, sealed in group of 2 wafers
99 p-type Si:B [100] 3″ 10,000 P/E 1–16 SEMI Prime, 2Flats, Individual cst
100 p-type Si:B [100] 3″ 300 P/P 0.5–10.0 SEMI Prime, 1Flat, TTV<2μm, Empak cst
101 p-type Si:B [100] 3″ 315 P/P 0.5–10.0 SEMI Prime, 1Flat, TTV<3μm, Empak cst
102 p-type Si:B [100] 3″ 315 P/P 0.5–10.0 SEMI Prime, 1Flat, Empak cst, TTV<3μm
103 p-type Si:B [100] 3″ 3,050 ±50 C/C >0.5 1Flat, Individual cst (can be ordered singly)
104 p-type Si:B [100] 3″ 250 P/E 0.15–0.20 SEMI TEST (Scratches), 2Flats, in sealed Empak cassettes of 3 wafers
105 p-type Si:B [100] 3″ 250 BROKEN 0.15–0.20 Broken wafers, in Epak cst
106 p-type Si:B [100–4° towards[110]] ±0.5° 3″ 230 P/E 0.01–0.02 SEMI Prime, 2Flats, Empak cst, TTV<5μm
107 p-type Si:B [100] 3″ 275 P/P 0.01–0.04 SEMI Test, Unsealed, Empak cst
108 p-type Si:B [100] 3″ 300 P/E 0.01–0.02 SEMI Prime, 2Flats, Empak cst
109 p-type Si:B [100] 3″ 380 P/P 0.01–0.02 SEMI Prime, 2Flats, Empak cst
110 p-type Si:B [100] 3″ 380 P/P 0.01–0.02 SEMI Prime, 2Flats, Empak cst
111 p-type Si:B [100] 3″ 380 P/E 0.01–0.02 SEMI Prime, 2Flats, Empak cst
112 p-type Si:B [100–4° towards[110]] ±0.5° 3″ 381 P/E 0.01–0.02 SEMI Prime, 2Flats, Empak cst, TTV<5μm
113 p-type Si:B [100] 3″ 435 ±10 E/E 0.01–0.02 {0.011–0.013} SEMI, 2Flats, TTV<2μm, coin roll
114 p-type Si:B [100] 3″ 450 ±10 E/E 0.01–0.02 SEMI Prime, 2Flats, Empak cst
115 p-type Si:B [100] 3″ 380 P/P 0.001–0.005 SEMI Prime, 2Flats, Empak cst
116 p-type Si:B [100] 3″ 380 P/E 0.001–0.005 SEMI Prime, 2Flats, Empak cst
117 p-type Si:B [100] 3″ 380 P/E 0.001–0.005 SEMI Prime, 2Flats, Empak cst
118 p-type Si:B [100] 3″ 500 P/P 0.001–0.005 SEMI Prime, 2Flats, Empak cst
119 p-type Si:B [5,5,12] ±0.5° 3″ 380 P/E 1–10 SEMI Prime, 1Flat, Empak cst
120 p-type Si:B [211] ±0.5° 3″ 525 P/P >10 SEMI Prime, 1Flat, Empak cst
121 p-type Si:B [211] ±0.5° 3″ 525 P/E >10 SEMI Prime, 1Flat, Empak cst
122 p-type Si:B [111–28° towards[001]] ±0.5° 3″ 400 P/E >20 SEMI TEST (Half of wafers polished on wrong side, some have etch patterns), Primary Flat @ <112>, hard cst
123 p-type Si:B [111–28° towards[001]] ±0.5° 3″ 400 P/E >20 SEMI Test, Primary Flat @ <112> Half of wafers polished on wrong side, some have etch patterns
124 p-type Si:B [111–4°] ±0.5° 3″ 380 P/E 8–12 SEMI Prime, 1Flat, Empak cst
125 p-type Si:B [111–4°] ±0.5° 3″ 380 P/E 8–12 SEMI Prime, 1Flat, Empak cst
126 p-type Si:B [111–2.5°] ±0.5° 3″ 380 P/E 1–5 SEMI Prime, 1Flat, Empak cst
127 p-type Si:B [111] ±0.5° 3″ 508 E/E 0.792–1.008 SEMI TEST, 1Flat, TTV<2μm, Epak cst
128 p-type Si:B [111–4°] ±0.5° 3″ 381 P/EOx 0.01–0.02 {0.0145–0.0148} SEMI Prime, 1Flat, Empak cst
129 p-type Si:B [111] 3″ 250 P/E 0.001–0.002 SEMI Prime, 1Flat, Empak cst
130 n-type Si:P [510] ±0.5° 3″ 1,000 P/E 5–10 Prime, NO Flats, Empak cst
131 n-type Si:P [110] ±0.5° 3″ 381 P/E 11–15 SEMI Prime, 2Flats, Individual cst, TTV<15μm
132 n-type Si:P [110] ±0.5° 3″ 200 P/P 1–10 SEMI Prime, SEMI Flat (one) @ [1,–1,0].
133 n-type Si:P [110] ±0.5° 3″ 381 P/E 1–10 SEMI Prime, SEMI Flat (one) @ [1,–1,0].
134 n-type Si:P [110] ±0.5° 3″ 381 P/E 1–10 SEMI Prime, SEMI Flat (one) @ [1,–1,0], in Empak cassettes of 2, 7 & 7 wafers
135 n-type Si:As [110] ±0.5° 3″ 420 P/P 0.001–0.007 SEMI Prime, in Empak, Primary Flat @ [1,–1,0]
136 n-type Si:P [100] 3″ 5,000 P/E >20 Rectangular wafers (80×40mm), Prime polish, Individual cst
137 n-type Si:P [100] ±1° 3″ 2,286 ±13 P/P 15–28 SEMI Prime, 1Flat, TTV<1μm, Sealed in individual csts, in groups of 5 wafers
138 n-type Si:P [100] 3″ 300 P/P 10–30 SEMI Prime, 2Flats, Empak cst, TTV<6μm
139 n-type Si:P [100] 3″ 300 P/P 10–30 SEMI Prime, 2Flats, in Empak cassettes of 6 & 7 wafers
140 n-type Si:P [100] 3″ 300 P/P 10–30 SEMI Prime, 2Flats, Empak cst, TTV<6μm
141 n-type Si:P [100] 3″ 300 P/P 10–30 SEMI Prime, 2Flats, Empak cst, TTV<6μm (cassettes of 11, 18, 22 and 24 wafers)
142 n-type Si:P [100] ±1° 3″ 300 ±10 P/P 5–15 SEMI Prime, TTV<1μm, Empak cst
143 n-type Si:P [100] 3″ 381 P/E 5–10 SEMI Prime, 1Flat, Empak cst
144 n-type Si:P [100] 3″ 350 P/P 4.3–6.7 SEMI Prime, 2Flats, Empak cst
145 n-type Si:P [100] 3″ 15,000 P/E 2–3 SEMI Prime, 1Flat, Individual cst
146 n-type Si:P [100] ±1° 3″ 500 P/P 1–100 SEMI Prime, TTV<2μm, Empak cst
147 n-type Si:P [100–4°] ±0.5° 3″ 500 P/E 1–20 Prime, 2Flats, Empak cst
148 n-type Si:P [100] 3″ 1,000 P/P 1–5 SEMI Prime, 2Flats, hard cst
149 n-type Si:P [100] 3″ 1,000 P/E 1–20 SEMI Prime, 2Flats, Empak cst
150 n-type Si:P [100] 3″ 5,000 P/E 1–100 SEMI Prime, 1Flat, Individual cst
151 n-type Si:Sb [100] 3″ 300 P/E 0.02–0.04 {0.021–0.031} SEMI Prime, 2Flats, hard cst
152 n-type Si:Sb [100] 3″ 300 P/E 0.02–0.04 SEMI Prime, 2Flats, in hard cassettes of 2 wafers
153 n-type Si:Sb [100] 3″ 381 P/E 0.008–0.020 SEMI Prime, 2Flats, Empak cst
154 n-type Si:As [100] 3″ 380 P/EOx 0.001–0.005 SEMI Prime, 2Flats, LTO Back–side seal 0.5μm thick, Empak cst
155 n-type Si:As [100] 3″ 380 P/E 0.001–0.005 SEMI Prime, 2Flats, Empak cst
156 n-type Si:As [100] 3″ 380 P/E 0.001–0.005 SEMI Prime, 2Flats, TTV<4μm, Bow<10μm, Warp<20μm, in Empak cassettes of 7 wafers
157 n-type Si:As [100] 3″ 380 P/E 0.001–0.005 SEMI Test, 2Flats, Empak cst, Broken wafer removed from cassette
158 n-type Si:As [211] ±0.5° 3″ 550 E/E 0.0030–0.0042 SEMI Prime, 1Flat, in Empak cassettes of 7, 8 & 8 wafers
159 n-type Si:P [111–4°] ±0.5° 3″ 250 P/E 50–220 {61–95} Prime, NO Flats, Empak cst
160 n-type Si:P [111] ±0.5° 3″ 1,400 P/E 25–35 SEMI Prime, 1Flat, in single wafer cassettes, sealed in groups of 5
161 n-type Si:P [111–5° towards[110]] ±0.25° 3″ 1,000 P/E >5 SEMI Prime, 1Flat, hard cst
162 n-type Si:P [111–5° towards[110]] ±0.25° 3″ 1,000 P/E >5 SEMI Prime, 1Flat, in hard cassettes of 6, 6 & 7 wafers
163 n-type Si:P [111–5° towards[110]] ±0.25° 3″ 1,300 P/E >5 SEMI Prime, 1Flat, hard cst
164 n-type Si:P [111–0.5° towards[110]] ±0.25° 3″ 1,400 E/E >5 SEMI, 1Flat, LaserMark, in opened hard cast
165 n-type Si:P [111] ±0.5° 3″ 350 P/E 1–10 SEMI Prime, 1Flat, Empak cst
166 n-type Si:P [111–2.5°] ±0.5° 3″ 380 P/E 1–3 SEMI Prime, 2Flats, Empak cst
167 n-type Si:P [111] ±0.5° 3″ 380 P/E 1–10 SEMI Prime, Empak cst
168 n-type Si:P [111–3.0°] ±1° 3″ 381 P/E 1–20 {1.7–5.7} SEMI Test, 2Flats, Empak cst
169 n-type Si:P [111] ±0.5° 3″ 570 P/P 1–10 SEMI Prime, Empak cst
170 n-type Si:P [111] ±0.5° 3″ 2,000 P/P 1–20 SEMI Prime, 1Flat, Individual cst Group of 5 wafers
171 n-type Si:P [111] ±0.5° 3″ 381 P/E 0.1–0.6 SEMI Prime, 2Flats, Empak cst
172 n-type Si:Sb [111] ±0.5° 3″ 380 P/E 0.019–0.026 SEMI Prime, 2Flats, in Empak cassettes of 5 wafers
173 n-type Si:Sb [111] ±0.5° 3″ 380 P/E 0.01–0.02 {0.010–0.013} SEMI Prime, 2Flats, Empak cst
174 n-type Si:Sb [111] ±0.5° 3″ 380 P/E 0.01–0.02 SEMI Prime, 2Flats, Empak cst
175 n-type Si:Sb [111] 3″ 380 P/E 0.008–0.025 SEMI Prime, 2Flats, Empak cst
176 n-type Si:Sb [111] ±0.5° 3″ 380 P/E 0.01–0.02 SEMI Prime, 2Flats, Empak cst
177 n-type Si:As [111] ±0.5° 3″ 380 P/E 0.001–0.005 SEMI Prime, 2Flats, TTV<5μm, Empak cst
178 n-type Si:As [111–4°] ±0.5° 3″ 380 P/E 0.001–0.005 SEMI Prime, 2Flats, Empak cst
179 n-type Si:As [111] ±0.5° 3″ 380 P/E 0.001–0.005 SEMI Prime, 2Flats, Empak cst
180 n-type Si:As [112–3° towards[111]] ±0.5° 3″ 890 P/E 0.002–0.003 Prime, 2Flats, Empak cst
181 n-type Si:As [225] 3″ 300 P/E 0.001–0.003 SEMI Prime, 1Flat, Empak cst
182 n-type Flats [100] 3″ 380 P/P 0.01–0.02 SEMI Prime, 2Flats, Empak cst
183 p-type Si:B [100] 3″ 380 OxP/EOx 10–20 SEMI Prime, 2Flats, hard cst, DRY Thermal Oxide (5–7)nm thick, on both sides
184 p-type Si:B [100] 3″ 500 OxP/POx 0.01–0.02 SEMI Prime, 2Flats, Empak cst, Both–sides–polished, with Thermal Oxide 1.0µm±5% thick
185 Si ??? 3″ ? P/P ? SEMI TEST (Unsealed), Empak cst
186 Si ??? 3″ ? P/P ? SEMI TEST (Unsealed), Empak cst
187 n-type Si:P [100] 3″ 381 P/P FZ 100–500 SEMI Prime, 2Flats, Empak cst
188 n-type Si:P [111] 3″ 300 P/E FZ 61–95 Prime, NO Flats, Empak cst
189 p-type Si:B [110] 3″ 750 P/E >100 PF<111> SF 70.5°
190 p-type Si:B [110] 3″ 380 P/E 1–10 1 F @ <1,–1,0>
191 p-type Si:B [100] 3″ 380 P/P 80–170 SEMI Prime, 2Flats, Empak cst
192 p-type Si:B [100] 3″ 300 P/P 30–35 SEMI Prime, 2Flats, Empak cst
193 p-type Si:B [100] 3″ 200 P/E 10–20 SEMI Prime, 2Flats, Empak cst
194 p-type Si:B [100] 3″ 300 P/E 5–20 PF <110>
195 p-type Si:B [100] 3″ 350 P/E 5–20 SEMI Prime, 2Flats, Empak cst
196 p-type Si:B [100] 3″ 3,000 P/P 4–6 Prime, NO Flats, Individual cst
197 p-type Si:B [100] 3″ 250 P/P 1–10 SEMI Prime, 2Flats, Empak cst
198 p-type Si:B [100] 3″ 300 P/P 1–10 SEMI Prime, 2Flats, Empak cst
199 p-type Si:B [100] 3″ 350 P/P 1–10 SEMI Prime, 2Flats, Empak cst
200 p-type Si:B [100] 3″ 380 P/E 1–10 SEMI Prime, 2Flats, Empak cst
201 p-type Si:B [100] 3″ 380 P/E 1–20 SEMI Prime, 1Flat, Empak cst
202 p-type Si:B [100] 3″ 380 P/E 1–20 SEMI Prime, 2Flats, Empak cst
203 p-type Si:B [100] 3″ 580 P/P 1–100 SEMI Prime, 1Flat, TTV<1μm, Lasermark, Empak cst
204 p-type Si:B [100] 3″ 950 P/E 1–20 SEMI Prime, 2Flats, Empak cst
205 p-type Si:B [100] 3″ 1,000 P/P 1–19 SEMI Prime, 2Flats, Empak cst
206 p-type Si:B [100] 3″ 5,000 P/E/P 1–10 Prime, NO Flats, Individual cst
207 p-type Si:B [100] 3″ 5,000 P/E 1–30 Prime, NO Flats, Individual cst
208 p-type Si:B [100] 3″ 10,000 P/E 1–16 Prime, NO Flats, Individual cst
209 p-type Si:B [100] 3″ 350 P/E/P 0.100–0.200 SEMI Prime, 2Flats, Empak cst
210 p-type Si:B [100] 3″ 400 P/P 0.1–0.2 SEMI Prime, 2Flats, Empak cst
211 p-type Si:B [100] 3″ 380 P/P 0.070–0.090 SEMI Prime, 2Flats, Empak cst
212 p-type Si:B [100] 3″ 400 P/P 0.015–0.016 SEMI Prime, 2Flats, Empak cst
213 p-type Si:B [100] 3″ 380 P/P 0.01–0.02 SEMI Prime, 2Flats, Empak cst
214 p-type Si:B [100] 3″ 380 P/E 0.003–0.004 SEMI Prime, 2Flats, Empak cst
215 p-type Si:B [100] 3″ 100 P/P 0.0026–0.0030 SEMI Prime, 2Flats, Empak cst
216 p-type Si:B [100] 3″ 300 P/E 0.002–0.003 SEMI Prime, 2Flats, Empak cst
217 p-type Si:B [100] 3″ 380 P/E 0.001–0.005 SEMI Prime, 2Flats, Empak cst
218 p-type Si:B [100] 3″ 525 P/P 0.001–0.005 SEMI Prime, 2Flats, Empak cst
219 p-type Si:B [911] 3″ 380 P/E 5–6 PF <110>
220 p-type Si:B [111] 3″ 380 P/E 18–21 SEMI Prime, 1Flat, Empak cst
221 p-type Si:B [111] 3″ 775 P/E 13–14 Prime, NO Flats, Empak cst
222 p-type Si:B [111] 3″ 1,000 P/E 10–20 Prime, NO Flats, Empak cst
223 p-type Si:B [111–4°] 3″ 380 P/E 8–12 SEMI Prime, 1Flat, Empak cst
224 p-type Si:B [111] 3″ 2,000 P/P 8–9 SEMI Prime, 2Flats, Individual cst
225 p-type Si:B [111] 3″ 625 P/P 5–8 SEMI Prime, 1Flat, Empak cst
226 p-type Si:B [111] 3″ 2,300 P/P 4–7 SEMI Prime, 1Flat, Individual cst
227 p-type Si:B [111] 3″ 500 P/E 2–6 SEMI Prime, 1Flat, Empak cst
228 p-type Si:B [111] 3″ 500 P/E 2–8 SEMI Prime, 1Flat, Empak cst
229 p-type Si:B [111] 3″ 300 P/E 1.4–1.8 Prime, NO Flats, Empak cst
230 p-type Si:B [111] 3″ 800 P/E 1–20 SEMI Prime, 1Flat, Empak cst
231 p-type Si:B [111] 3″ 300 P/P 0.3–0.4 SEMI Prime, 1Flat, Empak cst
232 p-type Si:B [111] 3″ 250 P/E 0.10–0.12 SEMI Prime, 1Flat, Empak cst
233 p-type Si:B [111] 3″ 300 P/E 0.03–0.04 SEMI Prime, 1Flat, Empak cst
234 p-type Si:B [111] 3″ 380 P/E 0.014–0.015 SEMI Prime, 1Flat, Empak cst
235 p-type Si:B [111–1°] 3″ 1,000 P/E 0.014–0.016 SEMI Prime, 1Flat, Empak cst
236 p-type Si:B [111] 3″ 600 P/P 0.005–0.020 SEMI Prime, 1Flat, Empak cst
237 p-type Si:B [111–3.5°] 3″ 380 P/E 0.004–0.005 SEMI Prime, 1Flat, Empak cst
238 n-type Si:P [510] 3″ 1,000 P/E/P 5–10 Prime, NO Flats, Empak cst
239 n-type Si:P [100] 3″ 750 P/E 100–130 SEMI Prime, 2Flats, Empak cst
240 n-type Si:P [100] 3″ 9,500 P/E 15–22 SEMI Prime, 1Flat, Individual cst
241 n-type Si:P [100] 3″ 300 P/E 10–20 SEMI Prime, 1Flat, Empak cst
242 n-type Si:P [100] 3″ 380 P/E 10–20 SEMI Prime, 2Flats, Empak cst
243 n-type Si:P [100] 3″ 3,000 P/E/P 10–12 Prime, NO Flats, Individual cst
244 n-type Si:P [100] 3″ 1,000 P/E 6–10 Prime, NO Flats, Empak cst
245 n-type Si:P [100] 3″ 1,500 P/E 5–7 SEMI Prime, 2Flats, Empak cst
246 n-type Si:P [100] 3″ 350 P/E 4.3–6.7 SEMI Prime, 2Flats, Empak cst
247 n-type Si:P [100] 3″ 500 P/E 4–10 Prime, NO Flats, Empak cst
248 n-type Si:P [100] 3″ 200 P/E 1–10 SEMI Prime, 2Flats, Empak cst
249 n-type Si:P [100] 3″ 280 P/E 1–20 SEMI Prime, 2Flats, Empak cst
250 n-type Si:P [100] 3″ 300 P/P 1–20 SEMI Prime, 2Flats, Empak cst
251 n-type Si:P [100] 3″ 350 P/P 1–25 SEMI Prime, 1Flat, TTV<1μm, Empak cst
252 n-type Si:P [100] 3″ 380 P/E 1–20 SEMI Prime, 2Flats, Empak cst
253 n-type Si:P [100] 3″ 600 P/E 1–10 SEMI Prime, 2Flats, Empak cst
254 n-type Si:P [100] 3″ 1,000 P/E 1–100 Prime, NO Flats, Empak cst
255 n-type Si:P [100] 3″ 1,800 P/P 1–5 SEMI Prime, 2Flats, Individual cst
256 n-type Si:P [100] 3″ 5,000 P/E 1–30 Prime, NO Flats, Individual cst
257 n-type Si:P [100] 3″ 6,000 P/E 1–20 SEMI Prime, 2Flats, Individual cst
258 n-type Si:P [100] 3″ 12,000 P/E 1–20 SEMI Prime, 2Flats, Individual cst
259 n-type Si:Sb [100] 3″ 800 P/E 0.022–0.028 SEMI Prime, 2Flats, Empak cst
260 n-type Si:Sb [100] 3″ 380 P/E 0.021–0.023 SEMI Prime, 2Flats, Empak cst
261 n-type Si:Sb [100] 3″ 500 P/E 0.021–0.022 SEMI Prime, 2Flats, Empak cst
262 n-type Si:As [100] 3″ 380 P/E 0.0033–0.0034 SEMI Prime, 2Flats, Empak cst
263 n-type Si:As [100] 3″ 1,000 P/E 0.001–0.005 SEMI Prime, 1Flat, Empak cst
264 n-type Si:P [100] 3″ 381 P/E <0.05 {1.30–420.00} SEMI Prime, 2Flats
265 n-type Si:P [211] 3″ 450 P/P 50–65 SEMI Prime, 2Flats, Empak cst
266 n-type Si:P [111–4°] 3″ 250 P/E 50–220 Prime, NO Flats, Empak cst
267 n-type Si:P [111] 3″ 1,500 P/P 31–35 SEMI Prime, 1Flat, Empak cst
268 n-type Si:P [111] 3″ 10,000 P/E 20–60 SEMI Prime, 1Flat, Individual cst
269 n-type Si:P [111–3°] 3″ 380 P/E 19–25 SEMI Prime, 2Flats, Empak cst
270 n-type Si:P [111] 3″ 3,000 P/E 10–20 SEMI Prime, 2Flats, Individual cst
271 n-type Si:P [111–0.5° towards[110]] ±0.25° 3″ 1,400 P/E >5 SEMI Prime, 1Flat, hard cst, LaserMark
272 n-type Si:P [111] 3″ 6,000 P/E 5–10 SEMI Prime, 1Flat, Individual cst
273 n-type Si:P [111] 3″ 525 P/E 4.5–5.0 SEMI Prime, 2Flats, Empak cst
274 n-type Si:P [111] 3″ 500 P/P 4–6 Prime, NO Flats, Empak cst
275 n-type Si:P [111] 3″ 275 P/E 3–6 SEMI Prime, 1Flat, Empak cst
276 n-type Si:P [111] 3″ 250 P/E 1.0–5.5 SEMI Prime, 2Flats, Empak cst
277 n-type Si:P [111] 3″ 350 P/E 1–10 SEMI Prime, 2Flats, Empak cst
278 n-type Si:P [111] 3″ 6,000 P/E 1–20 SEMI Prime, 2Flats, Individual cst
279 n-type Si:P [111] 3″ 1,000 P/P 0.5–2.0 SEMI Prime, 2Flats, Empak cst
280 n-type Si:Sb [111] 3″ 300 P/E 0.019–0.026 SEMI Prime, 2Flats, Empak cst
281 n-type Si:Sb [111–4°] 3″ 380 P/E 0.015–0.017 SEMI Prime, 2Flats, Empak cst
282 n-type Si:Sb [111–2.5°] 3″ 300 P/E 0.014–0.018 SEMI Prime, 2Flats, Empak cst
283 n-type Si:Sb [111–3.5°] 3″ 380 P/E 0.014–0.016 SEMI Prime, 2Flats, Empak cst
284 n-type Si:Sb [111–3°] 3″ 300 P/E 0.011–0.016 SEMI Prime, 2Flats, Empak cst
285 n-type Si:Sb [111] 3″ 380 P/E 0.008–0.025 SEMI Prime, 2Flats, Empak cst
286 n-type Si:As [111–0.5°] 3″ 380 P/P 0.003–0.005 SEMI Prime, 2Flats, Empak cst
287 n-type Si:As [111] 3″ 380 P/E/P 0.002–0.005 SEMI Prime, 1Flat, Empak cst
288 n-type Si:As [111–2.5°] 3″ 380 P/E 0.002–0.005 SEMI Prime, 2Flats, Empak cst
289 n-type Si:As [111–4°] 3″ 380 P/E 0.002–0.005 SEMI Prime, 2Flats, Empak cst

 

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