Description

1″ Si Wafers (1 inch Si wafers)

Note: Surface – P = Polished, E = Etched, C = AsCut, Ox = Oxide (on that layer); Material – CZ unless noted

Note: Items sold in quantities of 25, unless noted. Please email us to check the availability , price and lead time etc.

Item	Material	Orient.	Diam	Thck	Surf.	Resistivity	Comment
Item	Material	Orient.	(mm)	(μm)	Surf.	Ωcm	Comment
1	p-type Si:B	[100]	1″	280um	P/E	0-100 ohm-cm	SEMI, 1Flat, Soft cst
2	Intrinsic Si:-	[111]	1″	280um	P/E	FZ >2000 ohm-cm	Test Grade
3	p-type Si:B	[100]	1″		P/E	ANY	Test Grade
4	n-type Si:P	[100]	1″	475 ±10	E/E	FZ >500 {1,900–2,400}	NO Flats, Soft cst
5	n-type Si:P	[111] ±0.5°	1″	280	P/P	FZ 2,000–10,000	NO Flats, TTV<5μm, Soft cst
6	n-type Si:P	[111] ±0.5°	1″	4,000	P/E	FZ 50–60	Prime, NO Flats, Individual cst, sealed as group of 4
7	Intrinsic Si:-	[100]	1″	300	P/E	FZ >20,000	Prime, NO Flats, Soft cst
8	Intrinsic Si:-	[100]	1″	500	P/E	FZ >20,000	SEMI Prime, 1Flat, Soft cst
9	Intrinsic Si:-	[100]	1″	160	P/P	FZ >10,000	Prime, NO Flats, Soft cst, TTV<8μm
10	Intrinsic Si:-	[100]	1″	160	P/P	FZ >10,000	Prime, NO Flats, Soft cst, TTV<8μm
11	Intrinsic Si:-	[111] ±0.5°	1″	500	P/P	FZ >17,500	SEMI Prime, 1Flat, Soft cst
12	Intrinsic Si:-	[111] ±0.5°	1″	500	P/P	FZ >15,000	SEMI Prime, 1Flat, Soft cst
13	Intrinsic Si:-	[111] ±0.5°	1″	1,000	P/E	FZ 14,000–30,000	NO Flats, Soft cst
14	Intrinsic Si:-	[111] ±2°	1″	27,870	C/C	FZ >10,000	NO Flats, Soft cst
15	p-type Si:B	[510]	1″	1,000	P/E	1–100 {7.4–7.4}	NO Flats, Soft cst
16	p-type Si:B	[100]	1″	100 ±15	P/P	1–10	Prime, NO Flats, in sealed bags of 5 wafers.
17	p-type Si:B	[100]	1″	280	P/E	1–100	SEMI Prime, 1Flat, Soft cst
18	p-type Si:B	[100]	1″	300	P/E	1–10	SEMI Prime, 1Flat, Soft cst
19	p-type Si:B	[100]	24mm	300	P/E	1–100	Prime, NO Flats, Soft cst
20	p-type Si:B	[100]	1″	300	P/E	1–10	Prime, NO Flats, Soft cst
21	p-type Si:B	[100]	24.3mm	300	P/E	1–10 {4–5}	Prime, NO Flats, hard cst
22	p-type Si:B	[100]	1″	1,000	P/E	1–30	SEMI Prime, 1Flat, Soft cst
23	p-type Si:B	[100]	1″	275	P/P	0.015–0.020	SEMI Prime, 1Flat, Soft cst
24	p-type Si:B	[100]	1″	275	P/E	0.015–0.020	SEMI Prime, 1Flat, Soft cst
25	n-type Si:P	[100]	1″	280	P/E	1–5	SEMI, 1Flat, Soft cst
26	n-type Si:P	[111]	1″	330	P/E	FZ >90	Prime, NO Flats, Soft cst
27	p-type Si:B	[100]	1″	775	P/E	8–12	SEMI Prime, 1Flat, Soft cst
28	p-type Si:B	[100]	1″	300	P/P	4–6	SEMI Prime, 1Flat, Soft cst
29	p-type Si:B	[100]	24mm	300	P/E	1–100	Prime, NO Flats, Soft cst
30	p-type Si:B	[100]	1″	300	P/E	1–10	Prime, NO Flats, Soft cst
31	p-type Si:B	[100]	1″	300	P/E	1–100	1Flat MINIMUM 50 WAFERS
32	p-type Si:B	[100]	1″	500	P/P	1–90	SEMI Prime, 1Flat, Soft cst
33	p-type Si:B	[100]	1″	500	P/E	1–10	Ile zostalo ?
34	p-type Si:B	[100]	1″	380	P/E	0.003–0.005	10
35	p-type Si:B	[100]	1″	275	P/E	0.002–0.005	Prime, NO Flats, Soft cst
36	p-type Si:B	[111]	1″	600	P/E	1.3–1.6	Prime, NO Flats, Soft cst
37	n-type Si:P	[100]	1″	50 ±10	P/P	>20	SEMI Prime, 1Flat, TTV<5μm, in single wafer trays between clean–room sheets, MOQ 5 wafers
38	n-type Si:P	[100]	1″	3,500	P/E	1.2–3.0	SEMI Prime, 2Flats, Individual cst
39	n-type Si:P	[100]	1″	300	P/E	1–20	SEMI Prime, 1Flat, Soft cst
40	n-type Si:P	[100]	1″	1,500	P/E	1–20	Prime, NO Flats, Soft cst
41	n-type Si:As	[100]	1″	300	P/P	0.001–0.005	Prime, NO Flats, Soft cst
42	n-type Si:As	[111]	1″	380	P/E	0.002–0.007	SEMI Prime, 1Flat, Soft cst