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GaAs, InP, InAs, GaSb, SiC 4H 6H

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GaAs, InP, InAs, GaSb, SiC 4H and 6H Compound wafers

GaAs wafer
Size Type Orientation Spec Surface Quantity Dopant Resistivity Mobility EPD growth method OF Length IF Length
2 N (100)15 deg off toward<111>A±0.5 350+/-25um SSP 1000 Si (1.2—9.9) E-3 1000-3000 3000 VGF 17±1 7±1
2 N (100)2 deg off toward<111>A±0.5 350+/-25um SSP Si (1.2—9.9) E-3 1000-3000 3000 VGF 17±1 7±1
2 N (100)2 deg off toward<110>A±0.5 400+/-25um DSP none 1 E8 4200 5000 VGF 17±1 7±1
2 N -100 350+/-25um DSP none 1 E8 2000 5000 VGF 17±1 7±1
2 N -100 350+/-25um SSP 10 Si (1.2—9.9) E-3 1000-3000 3000 VGF 17±1 7±1
4 N (100)15 deg off toward<111>A±0.5 350+/-25um SSP 1000 Si (1.2—9.9) E-3 1000-3000 3000 VGF 32±1 18±1
4 N (100)2deg off toward<111>A±0.5 350+/-25um SSP 10 Si (1.2—9.9) E-3 1000-3000 3000 VGF 32±1 18±1
2 P (100)15 deg off toward<111A> 350+/-25um SSP 300 Zn (1.2—9.9) E-3 1000-3000 5000 VGF 17±1 7±1
4 Undoped 100 625+/-25um DSP 100 Undoped 1 E8 4500 5000 VGF 32.5±1 18±1
InP wafer
Size Type Orientation Spec Surface Quantity Dopant Resistivity Mobility EPD growth method OF Length IF Length
2 N (100)(111) 350+/-25um SSP 50 S (1.5-3.5)E3 5000 VGF 16±2 8±1
2 N (100)(111) 350+/-25um SSP 5 S (1.5-3.5)E3 5000 VGF 16±2 8±1
3 N (100)(111) 600+/-25um SSP 43 S (1.5-3.5)E3 5000 VGF 22±2 11±1
3 N (100)(111) 600+/-25um SSP 43 S (1.5-3.5)E3 5000 VGF 22±2 11±1
4 N (100)(111) 625+/-25um SSP 32 S (1.5-3.5)E3 5000 VGF 32.5±2 18±1
4 N (100)(111) 625+/-25um SSP 32 S (1.5-3.5)E3 5000 VGF 32.5±2 18±1
3 N (100)(111) 600+/-25um SSP 0 Fe 1E7 Ohmcm (1.5-3.5)E3 5000 VGF 22±2 11±1
GaSb wafer
Size Type Orientation Spec Surface Quantity Dopant Resistivity Mobility EPD growth method OF Length IF Length
2 N (100)(111) 500+/-25um SSP 5 Te 2000-3500 2000 VGF 16±2 8±1
2 N (100)(111) 500+/-25um SSP 4 Te 2000-3500 2000 VGF 16±2 8±1
3 N (100)(111) 625+/-25um SSP 6 Te 2000-3500 2000 VGF 22±2 11±1
3 N (100)(111) 625+/-25um SSP 6 Te 2000-3500 2000 VGF 22±2 11±1
4 N (100)(111) 1000+/-25um SSP 4 Te 2000-3500 2000 VGF 32.5±2 18±1
4H SiC wafer
Size Thickness Orientation OF Length IF Length Resistivity Status Ra 4H area MPD TTV Bow Warp
2 350 4°±0.5° 16±2 8±1 0.015-0.03 In stock 1 80% 25 30 45
2 350 4°±0.5° 16±2 8±1 0.015-0.03 In stock 1 95% 25 30 45
2 350 4°±0.5° 16±2 8±1 0.015-0.03 In stock 0.3 1 10 10 10 25
2 450 1.5°±0.5° 16±2 8±1 1E5 Ohm-cm In stock 0.3 100% 10 10 10 25
2 330 <0001>±0.5° 16±2 8±1 1E5 Ohm-cm In stock 0.5 90% 50 25 30 45
3 350 <0001>±0.5° 22.0±2.0 11.0±1.5 1E5 Ohm-cm 2 weeks 0.5 95% 50 15 25 35
3 350 4°±0.5° 22.0±2.0 11.0±1.5 0.015-0.03 In stock 0.3 95% 10 15 25 35
3 350 4°±0.5° 22.0±2.0 11.0±1.5 0.015-0.03 In stock 0.3 100% 10 15 10 25
3 350 4°±0.5° 22.0±2.0 11.0±1.5 0.015-0.03 In stock 0.3 95% 10 15 10 35
4 350 4°±0.5° 32.5±2 18±2 0.015-0.03 In stock 1 80% 25 30 45
4 350 4°±0.5° 32.5±2 18±2 0.015-0.03 In stock 0.3 100% 10 10 10 25
4 350 4°±0.5° 32.5±2 18±2 0.015-0.03 In stock 0.3 95% 10 15 25 35
6H SiC wafer
Size Thickness Orientation OF Length IF Length Resistivity Status Ra Usable area MPD TTV Bow Warp
2 330 <0001>±0.5° 15.9±1.7 8±1.7 0.02 ~0.1 O·cm 1 95% 25 30 45
InAs wafer
Size Type Orientation Spec Surface Quantity Dopant Resistivity Mobility EPD growth method OF Length IF Length
2 N -100 500+/-25um SSP 5 Zn/S 6000-20000 50000 VGF 16±2 8±1
3 N -100 625+/-25um SSP 6 Zn/S 6000-20000 50000 VGF 22±2 11±1
4 N -100 1000+/-25um SSP 4 Zn/S 6000-20000 50000 VGF 32.5±2 18±1

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