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6″ Si Wafers (6 inch Si wafers)

6″ Si Wafers (6 inch Si wafers), Surface – P = Polished, E = Etched, C = AsCut, Ox = Oxide (on that layer); Material – CZ unless noted, Items sold in quantities of 25, unless noted. Please email us to check the availability , price and  lead time etc.

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6″ Si Wafers (6 inch Si wafers)

Note: Surface – P = Polished, E = Etched, C = AsCut, Ox = Oxide (on that layer); Material – CZ unless noted

Note: Items sold in quantities of 25, unless noted. Please email us to check the availability , price and  lead time etc.

Item Material Orient. Diam Thck Surf. Resistivity Comment
(mm) (μm) Ωcm
1 P/B [111] Off 4° 150mm 675 SSP 8–12 1 SEMI Flat, MEMC150
2 N/As [100] 150mm 525 SSP 0.001-0.004 1 SEMI Flat, MEMC125AS
3 N/Sb [111] Off 2.5° 150mm 675 SSP 0.008-0.02 1 SEMI Flat, MEMC75
4 N/As [111] Off 3° 150mm 625 SSP 0.001-0.004 1 Flat Non-SEMI, MEMC500
5 N/As [111] 150mm 675 SSP 0.001-0.004 1 Flat Non-SEMI, MEMC200
6 N/As [100] 150mm 625 SSP 0.007-0.02 1 SEMI Flat, MEMC(100)
7 Undoped [100] 6″ 650um SSP FZ >10,000 ohm-cm
8 N/P [100] 6″ 675um SSP FZ 2,000-10,000ohm-cm Prime Grade, Float Zone (FZ)
9 p-type Si:B [100] 6″ 625um P/E 0-100 ohm-cm Test Grade with flat
10 TYPE-ANY ANY 6″ 625um P/E Resistivity-ANY Mech Grade with flat
11 P/B [100] 6″ 675um P/E 0.01-0.02 ohm-cm With EPI layer, Hard wetblast/LTO L.M.
12 P/B [100] 6″ 725um P/E 14-22 ohm-cm sd-soft laser mark
13 P/B [100] 6″ 635-715um P/E 10-30 ohm-cm 1 semi std. flat
14 P/B [100] 6″ 650-700um P/E 10-30 ohm-cm 2 semi std flats
15 P/B [100] 6″ 610-640um P/E 0.008-0.02 ohm-cm WITH EPI layer, poly bagged & labeled silicon wafers
16 P/B [100] 6″ 650-690um P/E 100-200 ohm-cm
17 N/P [100] 6″ 625um P/E 56-72.5 ohm-cm Poly-SI
18 P/B [100] 6″ 675um P/E 15-25 ohm-cm Poly-SI L.M.
19 N/Phos [100] 6″ 320um P/E 2000-8000 ohm-cm Prime Grade, Float Zone (FZ)
20 p-type Si:B [100] 6″ 675 P/P FZ 8,000–12,000 SEMI Prime, 1Flat (57.5mm), Empak cst, TTV<5μm
21 p-type Si:B [100] 6″ 675 P/E FZ 8–13 SEMI Prime, 1Flat (57.5mm), Empak cst
22 n-type Si:P [100] 6″ 1,000 ±15 P/E FZ 10,000–30,000 SEMI Prime, 1Flat (57.5mm), Empak cst
23 n-type Si:P [100] 6″ 1,000 ±15 P/E FZ 10,000–30,000 SEMI TEST (stains & scratches), Empak cst
24 n-type Si:P [100] 6″ 825 C/C FZ 7,000–8,000 SEMI, 1Flat, in Open Empak cst
25 n-type Si:P [100–6° towards[111]] ±0.5° 6″ 675 P/P FZ >3,500 SEMI Prime, 1Flat, Empak cst
26 n-type Si:P [100–6° towards[111]] ±0.5° 6″ 790 ±10 C/C FZ >3,500 SEMI Prime, 1Flat, Empak cst
27 n-type Si:P [100–6° towards[111]] ±0.5° 6″ 675 P/P FZ >1,000 SEMI notch Prime, Empak cst
28 n-type Si:P [100–6° towards[111]] ±0.5° 6″ 675 BROKEN FZ >1,000 SEMI notch Test, Empak cst, Broken into many large pieces. One piece ~50% of wafers other pieces ~20% of wafer
29 n-type Si:P [100] 6″ 725 P/P FZ 50–70 SEMI Prime, 1Flat (57.5mm), Empak cst
30 n-type Si:P [100] 6″ 5,975 P/E FZ >10 SEMI Prime, NO Flats, Lifetime=6,502μs, Individual cst
31 n-type Si:P [100] 6″ 675 P/E FZ 0.25–0.75 SEMI Prime, 1Flat (57.5mm), Empak cst
32 n-type Si:P [100] 6″ 675 E/E FZ 0.25–0.75 SEMI TEST (Large Chips & Defects), 1Flat (57.5mm), Soft cst
33 n-type Si:P [111] ±0.5° 6″ 275 ±10 P/P FZ >6,000 SEMI Prime, 1Flat(57.5mm), Lifetime>1,000μs, in hard cassettes of 3 & 4 wafers
34 n-type Si:P [111] ±0.5° 6″ 300 ±15 P/P FZ >6,000 SEMI Prime, 1Flat (57.5mm), Lifetime>1,000μs, Empak cst
35 n-type Si:P [111] ±0.5° 6″ 300 ±15 P/P FZ >6,000 SEMI Prime, 1Flat (57.5mm), Lifetime>1,000μs, Empak cst
36 n-type Si:P [111] ±0.5° 6″ 450 ±15 P/P FZ 5,500–7,000 SEMI Prime, 1Flat (57.5mm), Empak cst
37 n-type Si:P [111] ±0.5° 6″ 530 ±15 C/C FZ >3,000 SEMI Test, hard cst
38 n-type Si:P [112–5.0° towards[11–1]] ±0.5° 6″ 875 ±10 E/E FZ >3,000 SEMI, 1Flat (47.5mm), TTV<4μm, Surface Chips
39 n-type Si:P [112–5° towards[11–1]] ±0.5° 6″ 1,000 ±10 C/C FZ >3,000 SEMI, 1 JEIDA Flat (47.5mm), Empak cst, TTV<4μm, Lifetime>1,000μs
40 Intrinsic Si:- [111–4° towards[110]] ±0.5° 6″ 675 P/P FZ >10,000 SEMI Prime, 2Flats, Lifetime>1,500μs, in hard cassettes of 7 wafers
41 Intrinsic Si:- [111] ±0.5° 6″ 675 P/E FZ >10,000 SEMI notch Prime, Empak cst
42 Intrinsic Si:- [111] ±0.5° 6″ 750 E/E FZ >10,000 SEMI notch, TEST (defects, cannot be polished out), Empak cst
43 Intrinsic Si:- [111] ±0.5° 6″ 815 C/C FZ >10,000 SEMI notch, Empak cst
44 p-type Si:B [110] ±0.5° 6″ 450 P/P 20–25 Test, 2Flats, Empak cst, Scratches on both sides, can be repolished or thinned for additional fee
45 p-type Si:B [110] ±0.5° 6″ 390 ±10 C/C >10 Prime, 2Flats, Empak cst
46 p-type Si:B [110] 6″ 625 ±15 P/E 10–20 SEMI Prime, 1 JEIDA Flat(47.5mm) @ <111>, hard cst, TTV<3μm, Warp<15μm
47 p-type Si:B [110] ±0.5° 6″ 625 P/P 1–20 Prime, JEIDA Flat — Secondary 315° from PF, Empak cst
48 p-type Si:B [100] ±1° 6″ 710 P/P 80–120 SEMI Prime, 1Flat (57.5mm), Empak cst, TTV<7μm
49 p-type Si:B [100] 6″ 675 P/E 50–150 SEMI Prime, 1Flat (57.5mm), Empak cst
50 p-type Si:B [100] 6″ 675 P/E 8–12 SEMI Prime, 1Flat (57.5mm), Empak cst
51 p-type Si:B [100] 6″ 620±30µm P/P 5–25 SEMI Prime, 1Flat (57.5mm), Empak cst, TTV<4μm, Bow<10μm, Warp<30μm
52 p-type Si:B [100] 6″ 675 P/E 5–10 SEMI Prime, 1Flat (57.5mm), Empak cst
53 p-type Si:B [100] 6″ 675 P/E 4–6 SEMI Prime, 1Flat, Empak cst
54 p-type Si:B [100–9.7° towards[001]] ±0.1° 6″ 525 P/P 1–100 SEMI Prime, 1Flat (57.5mm), Empak cst
55 p-type Si:B [100] 6″ 675 P/P 1–100 SEMI Test, Both sides dirty and scratched, 1Flat, Empak cst
56 p-type Si:B [100] 6″ 675 P/E 1–10 SEMI notch Prime, Empak cst
57 p-type Si:B [100] 6″ 675 P/E 1–100 SEMI Prime, 1Flat, Empak cst
58 p-type Si:B [100] 6″ 750 ±10 E/E 1–5 SEMI, 1Flat, Soft cst
59 p-type Si:B [100] 6″ 800 ±10 P/P 1–100 SEMI Prime, 1Flat(57.5mm), in Empak cassettes of 6, 6 & 7 wafers
60 p-type Si:B [100] 6″ 1,000 P/E 1–10 SEMI Prime, 1Flat (57.5mm), Empak cst
61 p-type Si:B [100] 6″ 2,000 C/C 1–10 NO Flats, Individual cst
62 p-type Si:B [100] 6″ 2,175 C/C 1–10 NO Flats, Individual cst
63 p-type Si:B [100] 6″ 365 ±10 E/E 0.01–0.02 SEMI Prime, 1Flat (57.5mm), TTV<2μm, Empak cst
64 p-type Si:B [100] 6″ 675 P/E 0.01–0.02 SEMI Prime, 1Flat (57.5mm), Empak cst
65 p-type Si:B [100] 6″ 675 P/E 0.01–0.02 SEMI Prime, 1Flat (57.5mm), Empak cst
66 p-type Si:B [100] 6″ 675 P/P 0.001–0.005 SEMI Prime, 1Flat (57.5mm), Empak cst
67 p-type Si:B [100] 6″ 675 P/E 0.001–0.005 SEMI Prime, 1Flat (57.5mm), Empak cst
68 p-type Si:B [100] 6″ 675 P/E 0.001–0.010 SEMI Prime, 1Flat (57.5mm), Empak cst
69 p-type Si:B [111–4.0°] ±0.5° 6″ 625 P/E 4–15 {7.1–8.8} SEMI Prime, 1 JEIDA Flat(47.5mm), Empak cst
70 p-type Si:B [111–3.5°] 6″ 675 P/E 3–6 {4.77–5.05} SEMI Prime, 1Flat(57.5mm), Empak cst
71 n-type Si:P [100–10° towards[110]] ±0.5° 6″ 575 P/P 28.6–37.0 SEMI Test, 1Flat (57.5mm), Empak cst
72 n-type Si:P [100] 6″ 675 ±15 P/E 6.8–10.0 SEMI Prime, 2Flats, Empak cst, TTV<15μm
73 n-type Si:P [100] 6″ 200 P/P 5–100 SEMI Prime, 1Flat (57.5mm), Empak cst, 2 Prime Wafers and 2 wafers with pits on back
74 n-type Si:P [100] 6″ 725 P/P 5–35 SEMI Prime, 1Flat (57.5mm), Empak cst, TTV<3μm, Bow<10μm, Warp<20μm
75 n-type Si:P [100] 6″ 675 P/E 2.7–4.0 SEMI Prime, in Empak cassettes of 24, 24, 24 & 11 wafers
76 n-type Si:P [100] 6″ 675 P/E 2.7–4.0 SEMI Prime, in Empak cassettes of 6 & 7 wafers
77 n-type Si:P [100] 6″ 500 P/E 1.5–4.0 SEMI Prime, 1Flat(57.5mm), in Empak cassettes of 5 & 10 wafers
78 n-type Si:P [100] 6″ 250 ±5 P/P 1–3 SEMI Prime, 1Flat (57.5mm), TTV<2μm, Empak cst
79 n-type Si:P [100] 6″ 415 P/P 1–3 SEMI Prime, 1Flat, TTV<4μm, Empak cst
80 n-type Si:P [100–4° towards[110]] ±0.5° 6″ 675 P/E 1–25 SEMI Prime, 1Flat(57.5mm), Empak cst
81 n-type Si:P [100] ±1° 6″ 800 P/E 1–10 SEMI Prime, 1Flat(57.5mm), Empak cst
82 n-type Si:Sb [100–6° towards[110]] ±0.5° 6″ 675 P/P 0.01–0.02 SEMI Prime, 1Flat (57.5mm), Empak cst
83 n-type Si:Sb [100] 6″ 675 P/E 0.008–0.020 SEMI Prime, 1Flat (57.5mm), Empak cst
84 n-type Si:Sb [100–2.0° towards[110]] ±0.5° 6″ 1,000 ±10 P/E 0.005–0.030 SEMI notch Prime, Empak cst
85 n-type Si:As [100] 6″ 1,000 L/L 0.0033–0.0037 SEMI, 1Flat(57.5mm), in individual wafer cassettes
86 n-type Si:As [100] 6″ 1,000 L/L 0.0033–0.0037 SEMI, 1Flat(57.5mm), in individual wafer cassettes
87 n-type Si:As [100] 6″ 675 P/EOx 0.001–0.005 SEMI Prime, 1Flat (57.5mm), Empak cst, backside LTO 0.6um, TTV<3μm, Bow/Warp<15μm
88 n-type Si:P [111] ±0.5° 6″ 675 P/E 1–100 SEMI Prime, NO Flats, Empak cst
89 n-type Si:As [111–4°] ±0.5° 6″ 675 P/E 0.001–0.005 SEMI Prime, 1Flat (57.5mm), Empak cst, TTV<4μm, Bow<10μm, Warp<20μm
90 p-type Si:B [100] 6″ 625 OxP/POx 20–60 SEMI Prime, 1 JEIDA Flat(47.5mm), TTV<7μm, Thermal Oxide 0.80±0.08μm thick, in Empak cassettes of 4, 5 & 5 wafers
91 p-type Si:B [100] 6″ 635 ±15 OxP/POx 20–100 {40.7–56.9} SEMI Prime, 1Flat (57.5mm), TTV<6μm, Thermal Oxide 0.50±0.05μm thick, Empak cst
92 n-type Si:As [100] 6″ 675 OxP/EOx 0.001–0.005 SEMI TEST (spots & minor visual defects), 1Flat (57.5mm), Thermal Oxide 0.1μm±5% thick, Empak cst
93 n-type Si:P [111] ±0.5° 6″ 380 ±15 P/P FZ >3,000 SEMI Prime, hard cst
94 n-type Si:P [112–5° towards[11–1]] ±0.5° 6″ 880 ±10 P/P FZ >3,000 SEMI, 1 JEIDA Flat (47.5mm), Empak cst, TTV<4μm, Lifetime>1,000μs
95 n-type Si:P [112–5° towards[11–1]] ±0.5° 6″ 950 ±10 P/P FZ >3,000 SEMI, 1 JEIDA Flat (47.5mm), Empak cst, TTV<4μm, Lifetime>1,000μs
96 n-type Si:P [100] 6″ 750 P/P 5–35 SEMI Prime, 1Flat(57.5mm), TTV<2μm, TIR<1μm, Bow<10μm, Warp<20μm, Wafers await final polished, Empak cst

 

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