Description
Refurbished STS Multiplex ASE Bosch Process DRIE Silicon Etch System
SemiStar Corp. offers refurbished STS / SPTS Multiplex ASE Bosch Process DRIE silicon etch systems based on current inventory and original equipment configuration. STS, later known as SPTS Technologies and now associated with KLA through the SPTS product line, is widely recognized for MEMS, deep silicon etch, TSV, SOI, silicon micromachining, and semiconductor research applications.
The STS Multiplex ASE Bosch Process DRIE system is designed for deep reactive ion etching of silicon using alternating etch and passivation steps. It is commonly used for high aspect ratio silicon structures, MEMS devices, through-wafer etching, microfluidics, trenches, cavities, and other deep silicon etch applications.
Available systems vary by wafer size, chamber configuration, chuck type, RF configuration, gas box, vacuum pumping package, cooling configuration, and application history. SemiStar matches available STS Bosch DRIE systems to customer process requirements rather than offering a standardized configuration package.
Refurbished systems are supplied based on current inventory and original equipment configuration. Installation, startup assistance, and warranty may be available depending on system condition, final configuration, and project scope.
Photo shown is for reference only. Actual system appearance and configuration may vary.
Typical Applications
- MEMS fabrication
- Bosch process DRIE silicon etch
- Deep reactive ion etching
- High aspect ratio silicon etch
- TSV and through-wafer silicon etch
- SOI wafer etch
- Silicon micromachining
- Microfluidic device fabrication
- Deep trenches, cavities, and silicon structures
Typical Bosch DRIE Process Capability
| Process Area | Typical Use |
|---|---|
| Deep Silicon Etch | MEMS trenches, cavities, through-wafer etch, SOI structures |
| Bosch Process | Alternating silicon etch and sidewall passivation for vertical profiles |
| High Aspect Ratio Etch | Silicon structures requiring anisotropic deep etching |
| Research and Production Support | Universities, MEMS labs, R&D facilities, and semiconductor process development |
Typical Configuration Items to Confirm
- Wafer size and wafer handling configuration
- ICP source and RF generator configuration
- Chuck type and backside helium cooling capability
- Gas box configuration for Bosch DRIE process gases
- Vacuum pump and throttle valve configuration
- Platen temperature control and chiller requirements
- System condition, testing scope, installation scope, and warranty availability
Related STS / SPTS Inventory
SemiStar may also have other STS / SPTS Multiplex configurations available, including HRM deep silicon etch, ICP RIE, and M/PLEX metal etch systems. Please contact SemiStar for current inventory and configuration details.
Important Notes
- Refurbished equipment availability is subject to prior sale.
- Refurbished systems are supplied based on current inventory and original equipment configuration.
- Actual configuration, process capability, installation scope, warranty, and delivery schedule must be confirmed by quotation.
- SemiStar does not provide spare parts or service support for STS systems not sold by SemiStar.
- All OEM names, trademarks, and model names belong to their respective owners.
- All website information is for reference only and is not a purchase specification. Final configuration, scope, price, and terms are based on SemiStar’s official quotation.
Request a Quote for STS Bosch DRIE
Please contact SemiStar with your target application and required configuration. Helpful information includes wafer size, substrate type, etch material, target etch depth, mask material, required aspect ratio, process gases, facility limitations, budget and expected purchase timeline.
Contact SemiStar
SS380-MSP-275
Other SPTS/STS ICP RIE PECVD DRIE Equipment. Please contact us for the availability. These are only for end users.
Location SS5816-20250619
- STS Multiplex ICP Etcher , Metal Cluster
- STS Dielectric PECVD ,- 50 Hz, – 400 Volts , 2001 Vintage
- STS AOE Dielectric ICP Etcher, – 400 V, – 50 Hz
- STS Advanced Silicon DRIE Etch,2002 Vintage
- STS M/PLEX Multiplex ICP Etcher
- SPTS / STS Versalis fxP Etcher
- – It is configured for autoloading 200mm wafers
- – It has two process chambers:
- – CVE – XeF2 etch chamber (isotropic etching of Si)
- – CVD – oxide, nitride, and silicon
- – It does not have the Rapier chamber to run the DRIE Bosch process.
- 2018 Vintage
- STS Multiplex HRM ICP
- – Platen size: 4 in
- – Electrostatic Chuck
- – Gases:
- SF6: 450.00 sccm Eetch Cycle
- C4F8: 200.00 sccm Passivation Cycle
- O2: 450.00 sccm Eetch Cycle
- SPTS / STS Sigma fxP PVD,2023 Vintage
- STS Multiplex ICP Etcher
- – 400V
- – 50Hz
- – 3 Phase
- With:
- – MAG 900 CT turbopump
- – Power distribution & control rack cabinet with power distribution
- – Electrogrip electrostatic driver
- – vAT PM-7 adaptive pressure controller
- – Leybold Mag Drive 1000 pump controller
- – ENI ACG-10B RF generator
- – ENI ACG-3B-06 RF generator
- – ENI VL-400 phase shift controller
- – PowerBright VC-2000 step-up/down transformer
- – BOC Edwards iQDP-80 roughing pump
- – Neslab RTE-211 recirculating chiller
- – Gas cabinet
- – LEP300 control server
- – Configured for 3in substrates
- 2001 Vintage
Location SS7464 -20250619
- Plasmatherm / STS Vision 320 Mark II RIE Etcher
- STS MULTIPLEX systems, including a cluster metal ICP, dielectric PECVD, DRIE etch, and ICP etch.
- STS MULTIPLEX Dielectric PECVD
- STS MULTIPLEX ASE Silicon DRIE Etch
- STS MULTIPLEX AOE Dielectric ICP Etch
- STS Multiplex ICP system
- Used STS MULTIPLEX ICP
- STS MULTIPLEX
- STS multiplex dual chamber only DRIE equipment
Location: SS7464-S-3
- STS ASE ICP DRIE
- It was purchased new . This tool was used for low volume a few hours per week, over the time it was installed. It was maintained under a service contract during operation, and was deinstalled in working condition.
- Designed for silicon etching with gases plumbed for SF6, C4F8, N2, O2, and Ar
- Includes an add-on module for XeF2 isotropic silicon etching
- Tooling compatible with both 100 mm and 150 mm wafers
- Unique cyclical etching capability: alternating phases of etch and passivation enable deep, highly anisotropic etching results
- Capable of etching depths exceeding 500 microns and aspect ratios up to 20:1 with exceptional precision
- This STS ASE system remains a top choice for deep reactive-ion etching applications requiring fine control and high aspect ratio trenches, widely used in MEMS and microfabrication research.
