Description
PlasmaTherm LAPECVD 1130
Condition: Used
Vintage: 214
Location; Europe
OEM Name: Plasmatherm
Quantity: 1
Valid Time: Subject to prior sale without notice. Appreciate your time
Description from the Owner for your reference:
- LAPECVD tool 1130 was used for silicon nitride (our TPN) as well as for silicon oxide depositions (our TPO and TSO_Q, the latter being basically an oxide with some fluor in it, which has not been released for production on that tool so far).
- The size of the MFCs is to be found in the table enclosed. Some of the controllers can easily be reprogrammed to a smaller range or configured for use of different gases if needed.
- Both chambers of the tool were used for the same depositions. They are basically identical, except the gas boxes, where PM3 has one MFC less than PM2.
Gas | SiH4 | NH3 | He | N2O | SF6 | SiF4 | N2 | Ar | |
1130-PM2 | MFC physical range (sccm) | 500 | 200 | 5000 | 5000 | 1000 | 1000 | 5000 | 5000 |
MFC calibration gas | N2 | NH3 | N2 | N2O | SF6 | N2 | N2 | N2 | |
Gas configured at tool | SiH4 | NH3 | He | N2O | SF6 | SiF4 | N2 | Ar | |
MFC configured gas range (sccm) | 300 | 200 | 6950 | 5000 | 1000 | 350 | 5000 | 6950 | |
1130-PM3 | MFC physical range (sccm) | 500 | 200 | 5000 | 5000 | 1000 | 500 | 5000 | empty |
MFC calibration gas | N2 | NH3 | N2 | N2O | SF6 | N2 | N2 | empty | |
Gas configured at tool | SiH4 | NH3 | He | N2O | SF6 | SiF4 | N2 | empty | |
MFC configured gas range (sccm) | 300 | 200 | 6950 | 5000 | 1000 | 175 | 5000 | empty |
Description from the OEM for your reference:
LAPECVD™
Plasma-Therm’s LAPECVD™ (Large Area Plasma Enhanced Chemical Vapor Deposition) uses a cassette-to-cassette configuration to allow for high-volume production in a wide range of applications.
The LAPECVD™ platform can be used to deposit a variety of thin-film materials with its parallel-plate plasma deposition system.
Hardware
- Cassette-to-Cassette Handling
– Multi-substrate batch processing - Dual cassettes
- Platen heating up to 350°C
- Upper electrode RF power at 13.56 MHz with optional MFD
- Up to 8 gas channels with digital MFCs
- Thermally managed reactor design—up to 175°C for internal walls and shower head
Endpoint
- Integrated multifunctional endpoint capability with EndpointWorks.
- Unique OEI application for real-time film thickness and rate monitoring.
- OES for optimized chamber clean.
Software
- User friendly software
- Comprehensive data logging
- Automated cleaning program
- Real-time process data display
- Fully integrated endpoint system
- Factory automation compatible (SECS/GEM)
- Edit recipes during runs
- Multiple user access levels
- Alarm history
Process
-
- Stress control
- High uniformity
- Low damage
- Low particulates
- Tunable index
- Increased productivity with batch loading capability
- Low temperature
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- OEM-Module-1