Description
Graphite with CVD SiC Coating RTP Susceptor / Carrier
SemiStar graphite susceptors with CVD SiC coating have been production proven in semiconductor fabs for more than 40 years. Designed and manufactured in the USA, they provide excellent thermal performance, process repeatability, long service life, and compatibility with a wide range of Rapid Thermal Processing (RTP) systems.
Unlike many unproven graphite carriers, our susceptors have been verified through years of production use. Choosing an unproven susceptor can lead to unstable process results, poor temperature repeatability, reduced yield, unnecessary engineering time, and significantly higher overall ownership cost.
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Why Use a RTP Susceptor?
A RTP susceptor is recommended when processing:
- Small samples or small substrates
- Wafers with metal films or patterned metal on the top surface
- Transparent substrates such as sapphire, quartz, glass, or similar materials
- Wafers with non-uniform or rough backside surfaces
- Applications using a pyrometer temperature measurement system requiring stable and repeatable wafer emissivity
Why Graphite with CVD SiC Coating?
The graphite body provides excellent thermal conductivity and uniform heat distribution, while the dense Chemical Vapor Deposition (CVD) Silicon Carbide (SiC) coating provides:
- Excellent chemical resistance
- High temperature stability
- Excellent wear resistance
- Low particle generation
- Long service life
- Stable wafer support and repeatable RTP performance
Our standard CVD SiC coating thickness is approximately 100–120 μm. Proper SiC coating thickness is critical for RTP performance, coating durability, and long susceptor lifetime.
Recommended Configuration
For optimum RTP performance, we recommend using the susceptor base and lid together. Although some applications can use the susceptor base alone, using the complete susceptor assembly generally provides better temperature uniformity, process repeatability, and long-term process stability, especially for sensitive RTP processes.
Features
- Material: High-purity Graphite with CVD SiC Coating
- Made in USA
- Production Proven: More than 40 years
- Application: RTP Susceptor / Carrier
- CVD SiC Coating Thickness: Approximately 100–120 μm
- Excellent thermal uniformity and repeatability
- Long operating lifetime
- Compatible with many RTP systems
Available Sizes
- Single Wafer: 2″, 3″, 4″, 5″, 6″, 8″
- Multi-Wafer: 4×2″, 16×2″, 3×3″, 4×4″, 5×3″
- Custom sizes and configurations available upon request
Ordering Information
- Lead Time: TBD
- Subject to prior sale without notice.
- Available for end users only.
SGL Carbon, Schunk Xycarb Technology, TOYO TANSO, Tokai Carbon, Momentive Technologies, CoorsTek, ZhiCheng Semiconductor, Bay Carbon, Mersen, Ningbo Hiper, LIUFANG TECH, Hunan Xingsheng, Chengdu Ultra Pure Applied Materials