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RTP-6 RTP

Description

ADVANCE RIKO,Inc. RTP-6 Rapid Thermal Processing equipment

Condition: Used.

This is only for end user. Please contact us if you have any questions. Subject to prior sale without notice. Appreciate your time!

Specifications from OEM for your reference only.

Temperature Range RT ~ 1100 °C
Sample Size 6-inch wafer 1 piece (4 or 5-inch wafer is optional.)
Atmosphere In Static gas, Gas flow, Air, Vacuum (Vacuum pumping system is optional.)
Heating Method Top single-side heating method by paraboloidal surface reflected infrared lamp
Maximum Heating Rate 80 °C/s
Uniform Temp. Precision ΔT = 10 °C at 800 °C being maintained in N2
Control Sensor Thermocouple JIS “K” (inserted in SiC coated carbon susceptor), pyrometer (option)

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