The following are the operating specifications for the AG Associates Heatpulse 4100 system.
• Wafer handling: automatic, serial processing using standard cassettes.
• Throughput: Process dependent, approximately 80 wafers per hour (in a null cycle) without flat finder.
• Wafer sizes: 4″, 5″, and 6″ standard; 3″ optional.
• Ramp up rate: Programmable, 10°C to 200°C per second.
• Steady-state duration: 1-600 seconds per step.
• Ramp-down rate: Programmable, 10°C to 250°C per second. Rampdown rate is temperature-and-radiation-dependent and the maximum is 150°C per second.
• Recommended steady-state temperature range: 400 – 1300°C.
• ERP temperature accuracy: ±3.5°C (typical) to ±7.0°C (maximum), when calibrated against an instrumented thermocouple wafer (ITC).
• Temperature repeatability: ± 3°C or better at 1150°C wafer-to-wafer. (Repetition specifications are based on a 100-wafer set.)
• Temperature uniformity: + 5°C across a 6″ (150 mm) wafer at 1150°C. (This is a one-sigma deviation from 100 angstrom oxide-uniformity.) For a titanium-silicidation process, no more than 1.5% increase to uniformity during the first anneal at 650°C to 700°C.
