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P&TECH Furnaces & LPCVD

Description

Semiconductor thermal processing equipment | United States & Canada

P&TECH Semiconductor Furnaces & LPCVD Systems

Mini research furnaces, horizontal and vertical production furnaces, atmospheric processing, LPCVD, low-pressure annealing, and ultra-high-temperature SiC systems. For inquiries in the United States and Canada, please use the SemiStar inquiry form below.

About P&TECH

Founded in 2002 in South Korea, P&TECH (People & Technology) manufactures thermal processing equipment for semiconductor and solar-cell applications. Its company profile (PDF) describes equipment projects for semiconductor manufacturers, wafer suppliers, universities, and research organizations in Asia and Europe.

Equipment Portfolio

University / R&D

Mini Atmospheric Furnaces

4–12 in. portfolio | 100–1200°C (published mini-furnace range)

Compact horizontal or vertical systems for oxidation, annealing, and drive-in. The manufacturer’s technical profile lists approximately 10–50 wafers per tube, depending on configuration.

University / R&D

Mini LPCVD Furnaces

4–12 in. portfolio | Single-tube options

Compact systems for nitride, polysilicon, TEOS, and HTO processes. LTO is also listed in the technical profile. Process gases, pumping, and process-specific capability require confirmation.

Pilot line / Production

Horizontal Atmospheric Furnaces

4–12 in. portfolio | Selected multi-tube options

Oxidation, annealing, and drive-in systems for research and production. The preliminary commercial schedule includes 6-, 8-, and 12-inch models with selected one- to four-tube arrangements.

Pilot line / Production

Horizontal LPCVD Furnaces

Selected 6-, 8-, and 12-in. configurations

Horizontal furnace systems for nitride, polysilicon, TEOS, and HTO processes. Tube count, vacuum pumping, process kit, and automation are selected for the application.

Production

Vertical Atmospheric Furnaces

6 / 8 / 12 in. | Automated configurations

Furnaces for N₂ annealing, H₂ annealing, dry/wet oxidation, and drive-in. The manufacturer describes PLC/PC controls and automated wafer handling on selected production systems.

Production

Vertical LPCVD Furnaces

6 / 8 / 12 in. | Process-specific configurations

Vertical systems for nitride, POLY, D-POLY, TEOS, and HTO. Final process chemistry, pumping, loading, and facilities are established by the quotation.

Power semiconductor / SiC

Ultra-High-Temperature Oxidation

PF-UHTO61 | 6 in. baseline

Published process range: 800–1500°C; maximum equipment temperature: 1600°C. SiC tube and boat, with automated loading. Potential 8-inch adaptation requires manufacturer confirmation.

Power semiconductor / SiC

Ultra-High-Temperature Annealing

PF-UHTA61 | 6 in. baseline

Published process range: 800–2100°C; maximum equipment temperature: 2200°C. Graphite process components, N₂/Ar processing, and optional H₂. Potential 8-inch adaptation requires confirmation.

Special applications

Low-Pressure Anneal & Custom Furnaces

Configuration by application

Horizontal low-pressure anneal, high-temperature horizontal furnaces, and specialized systems. P&TECH also lists solar-cell LPCVD, diffusion, activation, and PECVD products; inquire about project fit.

Selected Configuration Overview

Equipment family Wafer sizes Processes Configuration
Mini atmospheric 4–12 in. portfolio Oxidation, anneal, drive-in Compact horizontal / vertical
Mini LPCVD 4–12 in. portfolio Nitride, poly, TEOS, HTO; LTO subject to confirmation R&D; single-tube options
Horizontal atmospheric / LPCVD 4–12 in. portfolio Oxidation, anneal, LPCVD Selected single- / multi-tube models
Vertical atmospheric / LPCVD 6, 8, 12 in. Oxidation, anneal, nitride, poly, TEOS, HTO Automated production configurations
Ultra-high-temperature SiC 6 in. baseline; possible 8 in. adaptation Oxidation / anneal PF-UHTO61 / PF-UHTA61

Wafer size availability, capacity, chemistry, temperature performance, automation, and process guarantees are configuration-dependent. Specifications are subject to manufacturer confirmation.

Applications: Universities and research institutes · Semiconductor R&D and pilot lines · Silicon and compound semiconductor manufacturing · Power semiconductors and SiC · Wafer manufacturing and thermal processing.

Quotations, Lead Time & Support

Each furnace is quoted according to wafer diameter, process, tube count, automation, pumping, and facility requirements. P&TECH has indicated a typical lead time of approximately five months and a standard warranty period of one year. Lead time, warranty coverage, installation, and commissioning terms are confirmed in each quotation and purchase order.

SemiStar can coordinate North American sales inquiries, installation planning, commissioning, training, and after-sales service with P&TECH. The exact support scope is established for each project.

Request a P&TECH Furnace Quote

For North American inquiries, please complete the SemiStar contact form below.

Please provide wafer diameter and material, process (oxidation / anneal / LPCVD), target temperature, process gases, wafer quantity per batch, preferred furnace type, installation location, and desired delivery date.

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