Description

Silicon Carbide Substrate

Application

Thermal dissipation plate for LED, and high power components such as CPU and converter

Material Characteristics

High thermal conductivity, corrosion resistant at high temperature, and high thermal stability

SiC refers to silicon carbide. Silicon carbide (SiC) is made of quartz sand, coke and other raw materials through the high temperature furnace melting. The current industrial production of silicon carbide has two kinds, black silicon carbide and green silicon carbide. Both are hexagonal crystal, the specific gravity of 3.21g / cm3, micro hardness of 2840 ~ 3320kg / mm².

At least 70 kinds of crystalline silicon carbide, due to its low gravity 3.21g/cm3 and high temperature strength, it is suitable for bearings or high temperature furnace raw materials. at any pressure can not be reached, and have a considerable low chemical activity.

At the same time, many people have tried to replace silicon with silicon carbide due to their high thermal conductivity, high crush electric field strength and high maximum current density. Recently, in the application of semiconductor high power components. In fact, the silicon carbide substrate in thermal conductivity, more than 10 times higher than the sapphire substrate, so the use of silicon carbide substrate LED components, with good conductivity and thermal conductivity, relatively conducive to the production of high-power LED

Material Comparison Chart:

Nature	density(g/㎝3 )	density(g/㎝3 )	(10-6 / ℃)	(Kgf/㎜2 )	(J/㎏*°K)	(GPa)	(MPa)	(MPa)	(MPa)	(MPa*m0.5 )	(Poisson’s ratio)	(℃)
Al2-O3	3.9	3.9	8	1600	880	370	262	2600	380	3.6	0.26	2053
ZrO2	6	6	10.1	1400	400	200	700	1850	690	9.5	0.23	2700
SiC	3.2	3.2	4	2300	700	410	400	3900	550	4.6	0.19	2700
Si3 N4	3.3	3.3	2.3	1500	700	310	524	2500	780	7.7	0.24	1900
Cellon Sialon	3.2	3.2	3	1600	620	300	450	3500	600	6.5	0.23	1900
WC	15	15	6	1600	390	700	896	6100	550	25	0.18	2870
Glass	2.5	2.5	0.5	1000	740	70	–	1100	69	1	0.2	2200
BN	2	2	2	220	1850	62	41	143	73	–	0.13	2600
AlN	3.2	3.2	4.4	1200	730	340	400	2070	350	2.6	0.25	2400
B4 C	2.5	2.5	5.6	3200	930	450	350	2800	400	3	0.15	2450
Steel	7.8	7.8	13.6	126	448	200	520	–	–	14	0.3	1450

Relatively high thermal conductivity of the substrate table:

Substrate material	FR4	MCPCB	LTCC	Al2-O3	SiC	AlN
(W/m*°K)	0.7~1.2	2~6	8~15	20~28	120~140	140~180
Insulativity(Ω×㎝)	1014	108	1013	1015	108	1011
(0.25cm2 ) (W)	<0.2	0.5~1	1~1.5	2~3	3~15	15~20
Board size	To large-scale	To large-scale	No more 6″×6″	No more 6″×6″	No more 6″×6″	No more 6″×6