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Roll-to-Roll ALD System

Description

Nano-Master Main Equipment: Thin FilmEtch | Cleaning | Space Simulation | Hybrid

Roll-to-Roll Atomic Layer Deposition

The roll-to-roll (R2R) plasma-enhanced atomic layer deposition (PEALD) system is designed for the continuous processing of flexible substrates and inline multilayer ALD coating on glass panels. The system addresses the need for high-throughput, uniform, and conformal thin film deposition on flexible materials, which is critical for applications such as flexible electronics, displays, barrier coatings, and panels. NANO-MASTER’s patented continuous flow process doubles the throughput of traditional ALD systems.

A few key advantages of roll-to-roll PEALD are:

  • Continuous processing: The R2R configuration allows for uninterrupted deposition, which significantly increases throughput compared to batch processes.
  • Uniform thin films: The combination of PEALD with R2R ensures highly uniform and conformal coatings, even on substrates with complex topographies.
  • Scalability: The system is designed to be scalable for industrial applications, facilitating the mass production of components.
  • Reduced thermal need: PEALD enables thin film deposition at lower temperatures, making it suitable for temperature-sensitive flexible substrates.

ALD R2R System Key Features:

  • Roll-to-roll substrate handling
  • ECR enhanced hollow cathode source
  • Onboard precursor delivery w/ fast pulse delivery valves
  • Fully automated PC based, recipe driven
  • Computer controlled safety interlocks
  • LabVIEW user interface

ALD R2R System Applications:

  • Flexible electronics
  • Barrier coatings for packaging
  • Photovoltaic cells
  • Sensors and actuators

NanoMaster ALD System Typical Performance:

(1) Uniformity: 0.36%, Wafer: 6″, Precursors: Trimethyl Aluminum and Water, Cycle: 100 cycles (TMA + H2O), Expected Thickness: 100Å, Temperature: 200°C, Uniformity %: 0.36%, Refractive Index: 1.68″

(2) Uniformity: 0.27%, Wafer: 6″, Precursors: Trimethyl Aluminum and Water, Cycle: 300 cycles, Expected Thickness: 300Å, Temperature: 200°C, Uniformity %: 0.27%, Refractive Index: 1.67″

(3) GaN Deposition with NLD-4000

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Nano-Master Main Equipment: Thin FilmEtch | Cleaning | Space Simulation | Hybrid

SS10840

The trademarks of the equipment and parts contained in this website belonged to the Original Equipment Manufacturers