Description

RTP_SA Series Vacuum RTP Vacuum RTP, Rapid Thermal Processing, Rapid Thermal Annealing

Category:  RTP – Rapid Thermal Processing 

RTP_SA Series (RTP_SemiAuto):

Applications:

●Implant Annealing / Activation
●Metal Alloy, GaAs Contact Alloy
●PSG/BPSG Reflow
●Trench Oxidation
●Gate Dielectric Formation
●Poly–Si Annealing
●Ti Silicide / Salicide / Nitride

Specifications:

●Wafer Size：Chip size or 2”~ 8”
●Temperature Range：RT ~ 1250℃
●Temperature Ramp Up Rate： ≦100℃/sec (Bare Wafer)
●Temperature Uniformity： ±1%
●Process chamber oxygen content：≧2ppm
●Process Pressure： 10m Torr ~ 1 atm (Option)

ID-SS5963

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We are a leading manufacturer of Rapid Thermal Processing and Direct Liquid Injection Deposition systems. We are a top supplier for MEMS, sensors, optoelectronics, telecommunication, power and discrete device manufacturing. Labs worldwide use our machines for the development of semiconductor, photovoltaic and nano-technology components. Rapid Thermal Processing or Rapid Thermal Annealing (RTP/RTA) is a semiconductor manufacturing process which provides a way to rapidly heat samples to high temperatures to perform short processes on a timescale of a few minutes maximum. Such rapid heating rates are performed by high intensity lamps (e.g. near-infrared light sources – Tungsten-halogen lamps) controlled by pyrometer and thermocouples that measure the sample temperature. Cooling must also be perfectly controlled to prevent dislocations and sample breakage. Rapid Thermal Processing was originally developed for ion implant anneal but has broadened its application to oxidation, silicide formation, chemical vapor deposition, and advanced applications such as modifying the crystallographic phase of elements, compounds or alloys to enhance properties, lattice interface or stress relaxation. RTP is a flexible technology that provides fast heating and cooling to process temperatures of ~200-1300°C with ramp rates typically 20-200°C/sec, combined with excellent gas ambient control, allowing the creation of sophisticated multistage processes within one processing recipe. We are extensively used in semiconductor device manufacturing for changing electrical or physical properties of a material (conductivity, permittivity, densification, or contamination reduction). Soak, spike, or millisecond anneals and thermal-radical oxidation are applied to different applications. The choice of technology depends on several factors, including the tolerance of the device to withstand a certain temperature/time exposure at a particular point in the manufacturing sequence. Applied’s portfolio of lamp- , laser- and heater-based systems encompasses the full range of anneal technologies, offering extendible solutions to such advanced-node challenges as pattern loading, thermal budget reduction, current leakage, interface quality optimization, and high-productivity treatments.Tokyo Electron Limited Kokusai Electric ASM Naura Thermco Systems CETC48 JTEKT Thermo Systems Corporation Amtech Systems, Inc Ohkura Tystar Sunred