Description
Refurbished Tegal 901e Plasma Dry Etcher Polysilicon SiNx Nitride Etch Semiconductor Equipment
SemiStar Corp. provides refurbished Tegal 901e plasma etcher systems for semiconductor polysilicon and SiNx nitride etching applications. The Tegal 901e platform has been widely used in semiconductor fabs, universities, research institutes, and compound semiconductor laboratories for dry etching and pattern transfer applications.
The Tegal 901e is different from the Tegal 903e oxide etcher platform. The Tegal 901e is primarily configured for polysilicon and silicon nitride etching using SF6 and O2 chemistry with a larger reactor gap configuration optimized for these applications. The Tegal 903e uses different chamber structure and CHF3/SF6/Helium chemistry mainly for oxide and dielectric etching applications.
According to original Tegal training documentation, the Tegal 901e is configured as a diode reactor with approximately 38 mm electrode gap and supports polysilicon and nitride etching applications using SF6 and O2 process gases. Typical process pressure range is approximately 200–450 mTorr for polysilicon etching and 250–350 mTorr for nitride etching with RF power typically between 100–300 watts. :contentReference[oaicite:0]{index=0}
Photos shown are for reference only. Actual configuration, condition, and installed options may vary. OEM trademarks belong to their respective owners.
Availability
- Refurbished Tegal 901e plasma dry etcher systems
- Various configurations depending on availability
- 3-inch to 6-inch wafer capability depending on configuration
- Systems subject to prior sale
- Only for qualified end users
System Description
The Tegal 901e is a classic semiconductor plasma dry etcher platform mainly designed for polysilicon and silicon nitride etching applications. The system has been widely used for semiconductor device manufacturing, MEMS processing, university R&D, and process development applications.
Typical applications include:
- Polysilicon etching
- SiNx silicon nitride etching
- Dry plasma etching process development
- MEMS fabrication
- Semiconductor device research
- Research institute and university applications
Typical Tegal 901e Process Configuration
- Reactor Type: Diode plasma etcher
- Typical Electrode Gap: ~38 mm
- Typical Wafer Size Capability: 3-inch to 6-inch
- Main Process Gases: SF6, O2
- Optional Process Gas: CHClF2 for controlled undercut process
- Typical Process Pressure: 200–450 mTorr (polysilicon)
- Typical Process Pressure: 250–350 mTorr (nitride)
- Typical RF Power: 100–250 W (polysilicon)
- Typical RF Power: 200–300 W (nitride)
- Typical Process Temperature: ~30°C
- Vacuum pump configuration depends on system
- Gas box and MFC quantity depend on configuration
Difference Between Tegal 901e and Tegal 903e
| Model | Main Application | Main Process Gases | Typical Reactor Gap |
|---|---|---|---|
| Tegal 901e | Polysilicon / SiNx Nitride Etch | SF6, O2 | ~38 mm |
| Tegal 903e | SiO2 Oxide / SOG / PECVD Nitride | CHF3, SF6, Helium | ~6 mm |
The Tegal 901e and 903e use different chamber structures, process gas configurations, and process tuning capability. They are not simply recipe differences.
Refurbishment Capability
SemiStar Corp. may provide refurbishment, repair, and upgrade support depending on the condition and configuration of the original system.
Possible support capability may include:
- RF generator and matching network evaluation
- Vacuum system refurbishment
- Gas delivery system inspection
- Chamber cleaning and refurbishment
- MFC replacement or calibration
- Controller and electronics repair
- PC-based controller upgrade options
- Touchscreen monitor upgrade options
- Data logging and GUI upgrade options
- Spare parts support depending on availability
Facility Requirements
- Process gases and gas cabinets are buyer responsibility
- Vacuum pumps and exhaust systems are buyer responsibility unless specifically quoted
- Cooling water, CDA, and facility connections are buyer responsibility
- Electrical requirements depend on final system configuration
- Facility preparation should be confirmed before shipment
Applications
- Semiconductor fabs
- Universities and research institutes
- MEMS device fabrication
- Compound semiconductor device processing
- Polysilicon gate etching applications
- Silicon nitride process applications
- Research and process development laboratories
Important Notes
- Configuration depends on actual available inventory
- Photos and specifications are for reference only
- Final specifications are subject to formal quotation
- Used/refurbished semiconductor equipment may show cosmetic wear
- Equipment availability subject to prior sale
- Customer is responsible for process qualification and application verification
RFQ Information Requested
- Wafer size and material
- Target process application
- Current process gases
- Existing tool model and configuration
- Required throughput
- Facility information
- Expected purchase timeline
- Special options or upgrade requirements