Description
Please contact us for the availability of the Veeco GEN-II MBE in San Jose,CA USA..The items are subject to prior sale without notice. The items are only for end users.
- Photos
- QTY: 3 sets
- Condition: Installed and running now
- Location: San Jose
- Description:
Two of the systems were used to grow GaAs-AlAs-InAs and then have Si and Be
doping sources. The third system was used to grow Si-Ge-Sn alloys and has an
As doping source.
MBE Growth system
Combination of IV: Si / Ge / Sn
Ports, 2.75″
Chamber 1 (III-V):
Arsenic valved cracker
Indium effusion cell
Gallium effusion cell
Aluminum effusion cell
Ga downward looking source
Silicon effusion cell (5 cc)
Beryllium effusion cell (5 cc)
Chamber 2 (Group IV):
Germanium effusion cell
Silicon e-beam source
Silicon high temperature source
Tin effusion cell
Arsenic valved cracker
Boron dopant source.
Similar to Riber 32 Riber 49 and AMAT Applied Materials Endura
ID-OEM-1