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Veeco GEN-II MBE

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Description

Please contact us for the availability of the Veeco GEN-II MBE in San Jose,CA USA..The items are subject to prior sale without notice. The items are only for end users.

  • Photos
  • QTY: 3 sets
  • Condition: Installed and running now
  • Location: San Jose
  • Description:
    Two of the systems were used to grow GaAs-AlAs-InAs and then have Si and Be
    doping sources. The third system was used to grow Si-Ge-Sn alloys and has an
    As doping source.
    MBE Growth system
    Combination of IV: Si / Ge / Sn
    Ports, 2.75″
    Chamber 1 (III-V):
    Arsenic valved cracker
    Indium effusion cell
    Gallium effusion cell
    Aluminum effusion cell
    Ga downward looking source
    Silicon effusion cell (5 cc)
    Beryllium effusion cell (5 cc)
    Chamber 2 (Group IV):
    Germanium effusion cell
    Silicon e-beam source
    Silicon high temperature source
    Tin effusion cell
    Arsenic valved cracker
    Boron dopant source.
    Similar to Riber 32 Riber 49 and AMAT Applied Materials Endura

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