Description
Tystar Equipment: MINI SERIES | STANDARD SERIES | NANO SEREIS | SOLAR SERIES | Photo-Enhanced CVD | Tystar Instruments: GAS CONTROL| MASS FLOW TESTER | FLOW CALIBRATOR
Model: TYTAN MINI SERIES for diffusion, oxidation and LPCVD applications
Equipment info for your reference.
The Tytan Mini Furnace Systems are designed for diffusion, oxidation and LPCVD applications. The systems require considerably less floor space and electrical power than conventional furnaces of equal capacity. The Mini series have been well accepted as dependable process tools both in the semiconductor industry and in the R&D community. They offer superior performance and process uniformities. The design incorporates several of the most advanced concepts required for high performance wafer processing tools. Some advantages of the systems are:
- Small footprint for full 50 to 100 wafer loads
- Extremely high process uniformities
- Up-time performance in excess of 95%
- Large installed customer base
- Dedicated expert service
- Electric power savings of up to 50%
Main Models and info ( Mini-TYTAN 4600 is the most popular furnace model ).
Furnace Model | 1600 | 1800 | 3600 | 3800 | 4600 |
Wafer Size | 6″ / 152.44 mm | 8″ / 203.2 mm | 6″ / 152.44 mm | 8″ / 203.2 mm | 6″ / 152.44 mm |
Tubes (Up to) | 1 Tube | 1 Tube | ≤ 3 Tubes | ≤ 3 Tubes | ≤ 4 Tubes |
Wafer Per Tube | 100 ATM
50 LPCVD |
100 ATM
50 LPCVD |
100 ATM
50 LPCVD |
100 ATM
50 LPCVD |
100 ATM
50 LPCVD |
Flat Zone | 18″ / 457.2 mm | 18″ / 457.2 mm | 18″ / 457.2 mm | 18″ / 457.2 mm | 18″ / 457.2 mm |
Dimensions
Length, Height, Depth |
L: 74″ / 1879.6 mm
H: 54″ / 1371.6 mm D: 30″ / 762.0 mm |
L: 74″ / 1879.6 mm
H: 54″ / 1371.6 mm D: 30″ / 762.0 mm |
L: 126″ / 3200.4 mm
H: 69″ / 1752.6 mm D: 30″ / 762.0 mm |
L: 126″ / 3200.4 mm
H: 82″ / 2082.8 mm D: 30″ / 762.0 mm |
L: 126″ / 3200.4 mm
H: 82″ / 2082.8 mm D: 30″ / 762.0 mm |
Maximum Power | 12 KVA | 19 KVA | 37 KVA | 45 KVA | 46 KVA |
Controls
The Tytan has controls for temperature, gas flows, timing and sequencing, and wafer loading / unloading, all of which can be accessed from the touch screen control console. The controller system is modular and consists of the following units: FCS-10/30 Furnace Control System, FCS-20E Process Control Host, Temperature Control Unit (TCU), MFS-460 Mass Flow System, and DCS-30 Data Collection System. All controller components are SECS/GEM compatible.
Wafer Ecology
Wafer contamination and particle deposition are key concerns of device manufacturers and R&D engineers. High-purity, chemically-resistant materials have been carefully selected for the gas distribution system and for all parts in contact with the wafers inside the process tube. Great care is exercised in pre-cleaning and assembling furnace parts. Point-of-use gas filters are used for all process gases. The Load Station provides a Class 10 environment with the use of an optional laminar flow blower module.
Safety
The Tytan system has a system of interlocks and other measures to ensure safety and mitigate damage in the event of component failure, power outage, or operator error. Fault conditions trigger the display of error messages on the touch screens and activate light towers and audible alarms. The tubes are controlled individually, so a failure in a single tube will not lead to a shutdown of the entire tube bank. Each system has a main power disconnect switch and one or more emergency off (EMO) buttons.
Gas controls are designed in a fail-safe manner requiring a minimum of operator attention. Systems will automatically default to a nitrogen purge mode in case of an emergency. Safety interlocks are used in the gas control system to provide adequate gas purge cycles, time delays, and to prevent the flow of certain gases below a minimum temperature or in combination with something incompatible. The reactive gas flows are deactivated if the process tube is opened, the tube pressure is too high, or the tube temperature is too low.
Toxic/flammable gas leakage is prevented by using high-quality components, helium leak-tested orbitally-welded 316 SS gas lines with VCR face seal fittings, double-walled tubing, and safety shut-off valves for each gas loop and for each manifold line. The gas control system incorporates interlocks which shut off reactive gas flow in the event of a leak or if the nitrogen purge flow to the pump drops below a preset value. All gas control components are mounted in a vented source cabinet connected to an exhaust duct. All gas lines are electropolished for reduction of particle generation and surface entrapment.
TYTAN furnaces are available in different models and configurations.
Tystar is a leading manufacturer of horizontal Low Pressure Chemical Vapor Deposition (LPCVD) diffusion furnaces and specialized Chemical Vapor Deposition (CVD) systems for the semiconductor industry. Our process tools have served research, engineering, and production of integrated circuits, MEMS, optoelectric devices, and other semiconductor materials for over 50 years.
The trademarks of the equipment and parts contained on this page belong to the Original Equipment Manufacturers.
Please provide info below for an official quotation with the following form. Appreciate your time.
- Substrate size, shape, thickness, materials:
- Voltage (208V, 220V, 240V, 380V,415V,480V, Unsure):
- AC Frequency (50Hz, 60Hz, Unsure):
- Laminar Flow Station – Laminar flow creates a class 10 clean room environment (Yes, No, Unsure):
- Plasma Cleaner function (Yes, No):
- Ultra High Vacuum Tubes – Pressures lower than 10-8 Torr (Yes, No):
- Number of Tubes (1,2,3,4, 4+):
No.1 No.2 No.3 No.4 Process Type * Gas Loops (1,2,3,4,5,Unsure) * (1) Atmosphere – Anneal ; (2) Atmosphere – Wet oxidation – Pyrogenic; (3) Atmosphere – Wet oxidation – Drip Feed Flash Vaporizer; (4) Atmosphere – Dry oxidation; (5) Atmosphere – Solid Source Doping – P Type; (6) Atmosphere – Solid Source Doping – N Type; (7) Atmosphere – Liquid Source Doping – POCL3; (8) Atmosphere – Liquid Source Doping – BBr3; (9) Atmosphere – Sintering; (10) Atmosphere – Carbon Nanotubes; (11) LPCVD – Silicon Nitride /Low Stress; (12) LPCVD – High Temperature Oxide; (13) LPCVD – Polysilicon (Doped/Undoped); (14) LPCVD – Low temperature Oxide; (15) LPCVD – PSG; (16) LPCVD – BPSG;
- Purchase Time Limit (1-3 months, 4-6 months, 6+ months, Unsure):
- Did you use any Furnace/LPCVD which met your requirements of your applications? If yes, which model and brand?