Description

GaAs Wafers – Gallium Arsenide

Note: Surface – P = Polished, E = Etched, C = AsCut, Ox = Oxide (on that layer), GaAs – Gallium Arsenide

Note: Please email us to check the availability , price and lead time etc.

Item	Material	Orient.	Diam	Thck	Surf.	Resistivity	Nc	Mobil	EPD	Comment
Item	Material	Orient.	(mm)	(μm)	Surf.	Ωcm	a/cm³	cm²/Vs	/cm²	Comment
1	undoped SI GaAs:-	[100]	4″	625	P/P	>/=1E7				2 Flats Epi-ready
2	undoped SI GaAs:-	[100]	4″	1,000	P/P	n-type >1E7			<5,000	VGF; US Flats; Epi Ready
3	undoped SI GaAs:-	[100]	4″	625	P/P	n-type >1E7			<5,000	VGF; US Flats; Epi Ready
4	undoped SI GaAs:-	[100]	2″	5,000	P/E	n-type 4E7				Epi Ready
5	undoped SI GaAs:-	[100]	2″	380	P/E	n-type >1E8		>5,000	<2,000	VGF; US Flats; Epi Ready
6	undoped SI GaAs:-	[100]	2″	400	BROKEN	n-type 6.48E7	1.70E+07	5,670	<7.3E4	Shattered in many pieces
7	undoped SI GaAs:-	[100]	2″	400	P/E	n-type 0.51	2.51E+15	4,900	<6.8E4	SEMI Flats; Epi Ready
8	undoped SI GaAs:-	[111B] ±0.5°	2″	400	P/P	n-type 7.5E7	1.70E+07	5,010	<8E4	EJ Flats; Epi Ready
9	n-type GaAs:Si	[100]	1″	500	BROKEN					NO Flats
10	n-type GaAs:Si	[100]	1″	500	P/E				<5,000	NO Flats; Epi Ready Cassette of 49 wafers between tissue paper
11	n-type GaAs:Si	[100]	1″	500	P/E				<5,000	VGF; NO Flats; Epi Ready Cassettes of 5 wafers
12	n-type GaAs:Te	[111B]	2″	385	P/P	9.30E-04	2.80E+18	2,400	<5E4	Epi Ready
13	p-type GaAs:Zn	[110]	2″	400	P/E	0.19	1.35E+17	235	<5E4	1 Flat @[1-10]; Epi Ready
14	p-type GaAs:Zn	[111A]	2″	400	BROKEN	0.8	6.00E+16	163	<6.1E4
15	p-type GaAs:Zn	[111B] ±0.5°	2″	400	P/E	0.0846-0.1430	(2.12-4.08)E17	180-205	<5.7E4	SEMI Flats; Primary @ (110), Secondary @ (112); Epi Ready
16	p-type GaAs:Zn	[111B] ±0.5°	2″	400	BROKEN	0.0846-0.1430	(2.12-4.08)E17	180-205	<5.7E4
17	undoped SI GaAs:-	[100-4° towards[111A]]	51.3mm	380	P/E	n-type 7.4E7	1.70E+07	5,000	<8E4	SEMI Flats; Epi Ready
18	undoped SI GaAs:-	[100-1° towards[111A]]	2″	350	P/P	n-type 8.7E7	1.30E+07	5,380	<7.8E4	SEMI Flats; Epi Ready
19	undoped SI GaAs:-	[100-1° towards[111A]]	2″	375	P/P	n-type 8.7E7	1.30E+07	5,380	<7.8E4	SEMI Flats; Epi Ready
20	undoped SI GaAs:-	[100]	2″	400	P/E	n-type 6.9E7	1.70E+07	5,250	<7.3E4	SEMI Flats; Epi Ready
21	undoped SI GaAs:-	[100]	2″	5,000	P/E	n-type 4E7	2.70E+07	5,700	<5.3E4	SEMI Flats; Epi Ready
22	undoped SI GaAs:-	[100-6° towards[111A]]	2″	400	P/E	n-type 2.5E7	4.80E+07	5,000	<5E4	Epi Ready
23	undoped SI GaAs:-	[100]	2″	400	P/P	n-type 0.61	2.90E+15	3,535	<5E4	SEMI Flats; Epi Ready
24	undoped SI GaAs:-	[100]	2″	400	P/E	n-type 1.6	3.45E+15	1,200	<5.8E4	SEMI Flats; Epi Ready
25	undoped SI GaAs:-	[110]	2″	400	P/E	n-type 7.3E7	1.10E+07	4,940	<10,000	SEMI; 2 Flats: Primary @(110), Secondary @(100); Epi Ready
26	undoped SI GaAs:-	[111B]	2″	400	P/E	n-type 6.4E7	2.30E+07	4,230	<8E4	EJ Flats; Epi Ready
27	n-type GaAs:Te	[111B]	2″	400	P/E	1.10E-03	2.58E+18	2,430	<5E4	SEMI Flats, Primary @ (110) & Secondary @ (112); Epi Ready
28	p-type GaAs:Zn	[111B]	2″	400	P/E	0.11	2.90E+17	190-216	<5.7E4	SEMI Flats; Epi Ready