Wafer Carrier made of CVD SiC

Our goal is to exceed your expectations. We will offer you the best solution at the least cost for any CVD Silicon Carbide Wafer Carrier / Wafer Susceptor. Our extensive Knowledge base with our local sales engineers averaging over 25 years experience allow us to assist in developing a custom solution for your unique CVD Silicon Carbide Wafer Carrier / Wafer Susceptor requirements. Please contact us and advise how we can help! We provide custom designs to meet your specific semiconductor CVD Silicon Carbide Wafer Carrier / Wafer Susceptor size and shape requirements.

Description

Category: Wafer Carrier/Susceptor – CVD Silicon Carbide

Lead Time: TBD

Forging the critical link between prototyping and production. Specializing in prototype work, we assure you finished CVD Silicon Carbide Wafer Carrier / Wafer Susceptor that meet development specifications.

Through our R&D process, CVD Silicon Carbide Wafer Carrier / Wafer Susceptor are also developed with production manufacturing in mind. By consulting with our engineers during the development process, you acquire the know-how that saves time and money when you need volume production. As production time approaches ,we are your best choice. Capable of handling any size job, we provide the security needed for making decisions that affect your customers.

Further, to keep pace with industry demands, our facilities are designed to grow and we continually add qualified personnel and the latest equipment.We also offer the flexibility of multiple shifts, rush order processing and JIT delivery. Add to this our commitment of providing superior materials and services, and you get the ideal manufacturing partner. Together we’ll get your CVD Silicon Carbide Wafer Carrier / Wafer Susceptor to market quickly and cost effectively.

Chemical Vapor Deposited (CVD) Silicon Carbide is a solid, monolithic crystalline ceramic manufactured in USA resulting in superior performance and value.

Features:

• Highly Pure (99.9995%)
• Theoretically dense with no porosity
• High strength and stiffness
• High thermal conductivity
• Lightweight
• Hardness (second only to diamond)

Benefits

• Resistance to corrosion, oxidation and erosion
• Resistance to wear and abrasion
• Resistance to thermal shock
• Resistance to chemicals
• Non-particle generating
• Performance at high temperatures (up to 1700 C)
• Superior flatness and polishable to < 3 Angstrom RMS

Uses:

• Semiconductor wafer-handling and chamber components
• LED susceptors (flat/concave/convex)
• Optical components
• Chemical seals and bearings
• Medical components
• Many others

Grades

• Low Resistivity (<1 ohm-cm)
• High Resistivity (>1000 ohm-cm)

Typical Trace Element Impurities in Parts Per Billion By Weight (ppbw)
Element	GDMS¹	NAA²	Element	GDMS¹		NAA²	Element	GDMS¹		NAA²
Li	< 3.2	–	Ge	< 28		–	Ba	< 5.7		< 2.2
Be	< 5.9	–	As	< 9.4		5.70	La	< 1.2		< 0.0062
B	290	–	Se	< 100		0.11	Ce	< 9.8		< 0.038
Na	30	0.63	Br	–		< 0.02	Eu	–		0.021
Mg	< 34	–	Rb	< 11		< 0.36	Tb	–		< 0.0004
Al	9.1	–	Sr	< 1.1		< 3.9	Yb	–		< 0.021
P	28	–	Y	< 0.87		–	Nd	< 7.3		–
S	88	–	Zr	< 3.2		< 4.5	Hf	< 6.1		< 0.0058
K	< 9.4	< 21	Nb	< 3.5		–	Ta	–		< 0.0057
Ca	< 5.8	< 840	Mo	< 17		0.28	W	< 12		0.688
Sc	< 0.64	< 0.0006	Ru	< 7.5		–	Re	< 5.3		–
Ti	< 4. 2	< 1400	Rh	< 3.6		–	Os	< 6.3		–
Cr	–	0.16	Pd	< 25		–	Ir	< 8.5		< 0.0001
V	< 1.4	–	Ag	< 20		< 0.047	Pt	< 9.6		< 19
Mn	< 3.9	–	Cd	< 150		< 0.57	Au			0.028
Fe	< 40	< 5	In	< 22		< 0.097	Hg	< 43		< 0.02
Co	< 4.0	< 0.67	Sn	< 29		< 4.1	TI	< 21		–
NI	< 13	205	Sb	< 27		0.072	Pb	< 7.1		–
Cu	< 16	1.55	I	< 63		–	BI	< 6.1		–
Zn	< 36	1.28	Te	< 26		–	Th	< 0.61		< 0.007
Ga	< 29	< 0.16	Cs	< 13		< 0.0083	U	< 0.42		< 0.039
Typical Properties for reference only

Properties			Typical Values ⁽¹⁾		Properties				Typical Values ⁽¹⁾
Hardness (kɡ mm ²̄ ) Knoop (500 ɡ load) Vickers (500 ɡ load)			2540 2500		Fracture Toughness, Kɪс Values Micro-indentation (MN m ⁻̇¹͘˙⁵) Controlled Flow (MN m ⁻̇¹͘˙⁵)				3.3 2.7
Flexural Strength, 4-point @ RT (Mpa/Ksi) @ RT 1400 ͦC (Mpa/Ksi)			415/60 575/84		Elastic Modulus Sonic (GPa/10⁶ psi) 4-point Flexure (GPa/10⁶ psi)				466/68 461/67
Welbull Parameters Modulus, m Scale Factor, ᵝ (Mpa/Ksi)			11 425/61		Coefficient of Thermal Expansion (K⁻¹) @ RT @ RT to 1000 C				2.2 x 10⁻⁶ 4.0 x 10⁻⁶
Density (ɡ cm ᶟ̄ )			3.21		Heat Capacity (Jkg⁻¹K⁻¹)				640
Crystal Structure (face-centered cubic ᵝ- phase)			FCC polycrystalline		Thermal Conductivity (Wm ⁻¹K⁻¹)				280
Chemical Purity			≥99.9995% SIC		Poisson’s Ratio				0.21
Sublimation Temperature (C)			~2700		Polishability				‹3Å RMS
Grain Size (µm)			5		Electrical Resistivity Low Resistivity Grade High Resistivity Grade				< 1 Ω cm > 1 Ω cm