Description
Parameter |
Specification |
| Growing Method | CZ or MCZ |
| Type | P |
| Dopant | Boron |
| Orientation | <100> |
| Resistivity | 1-100ohm-cm |
| Diameter | 300.00±0.2 mm |
| Thickness | ≥760um, 775±25um or 700-800um |
| Bow/Warp | ≤40um or better |
| TTV | ≤5um or better |
| Particle | ≥0.037um Max 100ea or better |
Please contact us if you are also interested in the the following 200mm 300mm wafers/silicon ingot.
- 200mm Si Test Wafer
- 300mm Si Test Wafer
- 200mm Al Wafer
- 300mm Al Wafer
- 200mm Si Oxide Wafer
- 300mm Si Oxide Wafer
- 300mm Silicon Ingot
- 350mm Silicon Ingot
