Description

6″ Si Wafers (6 inch Si wafers)

Note: Surface – P = Polished, E = Etched, C = AsCut, Ox = Oxide (on that layer); Material – CZ unless noted

Note: Items sold in quantities of 25, unless noted. Please email us to check the availability , price and lead time etc.

Item	Material	Orient.	Diam	Thck	Surf.	Resistivity	Comment
Item	Material	Orient.	(mm)	(μm)	Surf.	Ωcm	Comment
1	P/B	[111] Off 4°	150mm	675	SSP	8–12	1 SEMI Flat, MEMC150
2	N/As	[100]	150mm	525	SSP	0.001-0.004	1 SEMI Flat, MEMC125AS
3	N/Sb	[111] Off 2.5°	150mm	675	SSP	0.008-0.02	1 SEMI Flat, MEMC75
4	N/As	[111] Off 3°	150mm	625	SSP	0.001-0.004	1 Flat Non-SEMI, MEMC500
5	N/As	[111]	150mm	675	SSP	0.001-0.004	1 Flat Non-SEMI, MEMC200
6	N/As	[100]	150mm	625	SSP	0.007-0.02	1 SEMI Flat, MEMC(100)
7	Undoped	[100]	6″	650um	SSP	FZ >10,000 ohm-cm
8	N/P	[100]	6″	675um	SSP	FZ 2,000-10,000ohm-cm	Prime Grade, Float Zone (FZ)
9	p-type Si:B	[100]	6″	625um	P/E	0-100 ohm-cm	Test Grade with flat
10	TYPE-ANY	ANY	6″	625um	P/E	Resistivity-ANY	Mech Grade with flat
11	P/B	[100]	6″	675um	P/E	0.01-0.02 ohm-cm	With EPI layer, Hard wetblast/LTO L.M.
12	P/B	[100]	6″	725um	P/E	14-22 ohm-cm	sd-soft laser mark
13	P/B	[100]	6″	635-715um	P/E	10-30 ohm-cm	1 semi std. flat
14	P/B	[100]	6″	650-700um	P/E	10-30 ohm-cm	2 semi std flats
15	P/B	[100]	6″	610-640um	P/E	0.008-0.02 ohm-cm	WITH EPI layer, poly bagged & labeled silicon wafers
16	P/B	[100]	6″	650-690um	P/E	100-200 ohm-cm
17	N/P	[100]	6″	625um	P/E	56-72.5 ohm-cm	Poly-SI
18	P/B	[100]	6″	675um	P/E	15-25 ohm-cm	Poly-SI L.M.
19	N/Phos	[100]	6″	320um	P/E	2000-8000 ohm-cm	Prime Grade, Float Zone (FZ)
20	p-type Si:B	[100]	6″	675	P/P	FZ 8,000–12,000	SEMI Prime, 1Flat (57.5mm), Empak cst, TTV<5μm
21	p-type Si:B	[100]	6″	675	P/E	FZ 8–13	SEMI Prime, 1Flat (57.5mm), Empak cst
22	n-type Si:P	[100]	6″	1,000 ±15	P/E	FZ 10,000–30,000	SEMI Prime, 1Flat (57.5mm), Empak cst
23	n-type Si:P	[100]	6″	1,000 ±15	P/E	FZ 10,000–30,000	SEMI TEST (stains & scratches), Empak cst
24	n-type Si:P	[100]	6″	825	C/C	FZ 7,000–8,000	SEMI, 1Flat, in Open Empak cst
25	n-type Si:P	[100–6° towards[111]] ±0.5°	6″	675	P/P	FZ >3,500	SEMI Prime, 1Flat, Empak cst
26	n-type Si:P	[100–6° towards[111]] ±0.5°	6″	790 ±10	C/C	FZ >3,500	SEMI Prime, 1Flat, Empak cst
27	n-type Si:P	[100–6° towards[111]] ±0.5°	6″	675	P/P	FZ >1,000	SEMI notch Prime, Empak cst
28	n-type Si:P	[100–6° towards[111]] ±0.5°	6″	675	BROKEN	FZ >1,000	SEMI notch Test, Empak cst, Broken into many large pieces. One piece ~50% of wafers other pieces ~20% of wafer
29	n-type Si:P	[100]	6″	725	P/P	FZ 50–70	SEMI Prime, 1Flat (57.5mm), Empak cst
30	n-type Si:P	[100]	6″	5,975	P/E	FZ >10	SEMI Prime, NO Flats, Lifetime=6,502μs, Individual cst
31	n-type Si:P	[100]	6″	675	P/E	FZ 0.25–0.75	SEMI Prime, 1Flat (57.5mm), Empak cst
32	n-type Si:P	[100]	6″	675	E/E	FZ 0.25–0.75	SEMI TEST (Large Chips & Defects), 1Flat (57.5mm), Soft cst
33	n-type Si:P	[111] ±0.5°	6″	275 ±10	P/P	FZ >6,000	SEMI Prime, 1Flat(57.5mm), Lifetime>1,000μs, in hard cassettes of 3 & 4 wafers
34	n-type Si:P	[111] ±0.5°	6″	300 ±15	P/P	FZ >6,000	SEMI Prime, 1Flat (57.5mm), Lifetime>1,000μs, Empak cst
35	n-type Si:P	[111] ±0.5°	6″	300 ±15	P/P	FZ >6,000	SEMI Prime, 1Flat (57.5mm), Lifetime>1,000μs, Empak cst
36	n-type Si:P	[111] ±0.5°	6″	450 ±15	P/P	FZ 5,500–7,000	SEMI Prime, 1Flat (57.5mm), Empak cst
37	n-type Si:P	[111] ±0.5°	6″	530 ±15	C/C	FZ >3,000	SEMI Test, hard cst
38	n-type Si:P	[112–5.0° towards[11–1]] ±0.5°	6″	875 ±10	E/E	FZ >3,000	SEMI, 1Flat (47.5mm), TTV<4μm, Surface Chips
39	n-type Si:P	[112–5° towards[11–1]] ±0.5°	6″	1,000 ±10	C/C	FZ >3,000	SEMI, 1 JEIDA Flat (47.5mm), Empak cst, TTV<4μm, Lifetime>1,000μs
40	Intrinsic Si:-	[111–4° towards[110]] ±0.5°	6″	675	P/P	FZ >10,000	SEMI Prime, 2Flats, Lifetime>1,500μs, in hard cassettes of 7 wafers
41	Intrinsic Si:-	[111] ±0.5°	6″	675	P/E	FZ >10,000	SEMI notch Prime, Empak cst
42	Intrinsic Si:-	[111] ±0.5°	6″	750	E/E	FZ >10,000	SEMI notch, TEST (defects, cannot be polished out), Empak cst
43	Intrinsic Si:-	[111] ±0.5°	6″	815	C/C	FZ >10,000	SEMI notch, Empak cst
44	p-type Si:B	[110] ±0.5°	6″	450	P/P	20–25	Test, 2Flats, Empak cst, Scratches on both sides, can be repolished or thinned for additional fee
45	p-type Si:B	[110] ±0.5°	6″	390 ±10	C/C	>10	Prime, 2Flats, Empak cst
46	p-type Si:B	[110]	6″	625 ±15	P/E	10–20	SEMI Prime, 1 JEIDA Flat(47.5mm) @ <111>, hard cst, TTV<3μm, Warp<15μm
47	p-type Si:B	[110] ±0.5°	6″	625	P/P	1–20	Prime, JEIDA Flat — Secondary 315° from PF, Empak cst
48	p-type Si:B	[100] ±1°	6″	710	P/P	80–120	SEMI Prime, 1Flat (57.5mm), Empak cst, TTV<7μm
49	p-type Si:B	[100]	6″	675	P/E	50–150	SEMI Prime, 1Flat (57.5mm), Empak cst
50	p-type Si:B	[100]	6″	675	P/E	8–12	SEMI Prime, 1Flat (57.5mm), Empak cst
51	p-type Si:B	[100]	6″	620±30µm	P/P	5–25	SEMI Prime, 1Flat (57.5mm), Empak cst, TTV<4μm, Bow<10μm, Warp<30μm
52	p-type Si:B	[100]	6″	675	P/E	5–10	SEMI Prime, 1Flat (57.5mm), Empak cst
53	p-type Si:B	[100]	6″	675	P/E	4–6	SEMI Prime, 1Flat, Empak cst
54	p-type Si:B	[100–9.7° towards[001]] ±0.1°	6″	525	P/P	1–100	SEMI Prime, 1Flat (57.5mm), Empak cst
55	p-type Si:B	[100]	6″	675	P/P	1–100	SEMI Test, Both sides dirty and scratched, 1Flat, Empak cst
56	p-type Si:B	[100]	6″	675	P/E	1–10	SEMI notch Prime, Empak cst
57	p-type Si:B	[100]	6″	675	P/E	1–100	SEMI Prime, 1Flat, Empak cst
58	p-type Si:B	[100]	6″	750 ±10	E/E	1–5	SEMI, 1Flat, Soft cst
59	p-type Si:B	[100]	6″	800 ±10	P/P	1–100	SEMI Prime, 1Flat(57.5mm), in Empak cassettes of 6, 6 & 7 wafers
60	p-type Si:B	[100]	6″	1,000	P/E	1–10	SEMI Prime, 1Flat (57.5mm), Empak cst
61	p-type Si:B	[100]	6″	2,000	C/C	1–10	NO Flats, Individual cst
62	p-type Si:B	[100]	6″	2,175	C/C	1–10	NO Flats, Individual cst
63	p-type Si:B	[100]	6″	365 ±10	E/E	0.01–0.02	SEMI Prime, 1Flat (57.5mm), TTV<2μm, Empak cst
64	p-type Si:B	[100]	6″	675	P/E	0.01–0.02	SEMI Prime, 1Flat (57.5mm), Empak cst
65	p-type Si:B	[100]	6″	675	P/E	0.01–0.02	SEMI Prime, 1Flat (57.5mm), Empak cst
66	p-type Si:B	[100]	6″	675	P/P	0.001–0.005	SEMI Prime, 1Flat (57.5mm), Empak cst
67	p-type Si:B	[100]	6″	675	P/E	0.001–0.005	SEMI Prime, 1Flat (57.5mm), Empak cst
68	p-type Si:B	[100]	6″	675	P/E	0.001–0.010	SEMI Prime, 1Flat (57.5mm), Empak cst
69	p-type Si:B	[111–4.0°] ±0.5°	6″	625	P/E	4–15 {7.1–8.8}	SEMI Prime, 1 JEIDA Flat(47.5mm), Empak cst
70	p-type Si:B	[111–3.5°]	6″	675	P/E	3–6 {4.77–5.05}	SEMI Prime, 1Flat(57.5mm), Empak cst
71	n-type Si:P	[100–10° towards[110]] ±0.5°	6″	575	P/P	28.6–37.0	SEMI Test, 1Flat (57.5mm), Empak cst
72	n-type Si:P	[100]	6″	675 ±15	P/E	6.8–10.0	SEMI Prime, 2Flats, Empak cst, TTV<15μm
73	n-type Si:P	[100]	6″	200	P/P	5–100	SEMI Prime, 1Flat (57.5mm), Empak cst, 2 Prime Wafers and 2 wafers with pits on back
74	n-type Si:P	[100]	6″	725	P/P	5–35	SEMI Prime, 1Flat (57.5mm), Empak cst, TTV<3μm, Bow<10μm, Warp<20μm
75	n-type Si:P	[100]	6″	675	P/E	2.7–4.0	SEMI Prime, in Empak cassettes of 24, 24, 24 & 11 wafers
76	n-type Si:P	[100]	6″	675	P/E	2.7–4.0	SEMI Prime, in Empak cassettes of 6 & 7 wafers
77	n-type Si:P	[100]	6″	500	P/E	1.5–4.0	SEMI Prime, 1Flat(57.5mm), in Empak cassettes of 5 & 10 wafers
78	n-type Si:P	[100]	6″	250 ±5	P/P	1–3	SEMI Prime, 1Flat (57.5mm), TTV<2μm, Empak cst
79	n-type Si:P	[100]	6″	415	P/P	1–3	SEMI Prime, 1Flat, TTV<4μm, Empak cst
80	n-type Si:P	[100–4° towards[110]] ±0.5°	6″	675	P/E	1–25	SEMI Prime, 1Flat(57.5mm), Empak cst
81	n-type Si:P	[100] ±1°	6″	800	P/E	1–10	SEMI Prime, 1Flat(57.5mm), Empak cst
82	n-type Si:Sb	[100–6° towards[110]] ±0.5°	6″	675	P/P	0.01–0.02	SEMI Prime, 1Flat (57.5mm), Empak cst
83	n-type Si:Sb	[100]	6″	675	P/E	0.008–0.020	SEMI Prime, 1Flat (57.5mm), Empak cst
84	n-type Si:Sb	[100–2.0° towards[110]] ±0.5°	6″	1,000 ±10	P/E	0.005–0.030	SEMI notch Prime, Empak cst
85	n-type Si:As	[100]	6″	1,000	L/L	0.0033–0.0037	SEMI, 1Flat(57.5mm), in individual wafer cassettes
86	n-type Si:As	[100]	6″	1,000	L/L	0.0033–0.0037	SEMI, 1Flat(57.5mm), in individual wafer cassettes
87	n-type Si:As	[100]	6″	675	P/EOx	0.001–0.005	SEMI Prime, 1Flat (57.5mm), Empak cst, backside LTO 0.6um, TTV<3μm, Bow/Warp<15μm
88	n-type Si:P	[111] ±0.5°	6″	675	P/E	1–100	SEMI Prime, NO Flats, Empak cst
89	n-type Si:As	[111–4°] ±0.5°	6″	675	P/E	0.001–0.005	SEMI Prime, 1Flat (57.5mm), Empak cst, TTV<4μm, Bow<10μm, Warp<20μm
90	p-type Si:B	[100]	6″	625	OxP/POx	20–60	SEMI Prime, 1 JEIDA Flat(47.5mm), TTV<7μm, Thermal Oxide 0.80±0.08μm thick, in Empak cassettes of 4, 5 & 5 wafers
91	p-type Si:B	[100]	6″	635 ±15	OxP/POx	20–100 {40.7–56.9}	SEMI Prime, 1Flat (57.5mm), TTV<6μm, Thermal Oxide 0.50±0.05μm thick, Empak cst
92	n-type Si:As	[100]	6″	675	OxP/EOx	0.001–0.005	SEMI TEST (spots & minor visual defects), 1Flat (57.5mm), Thermal Oxide 0.1μm±5% thick, Empak cst
93	n-type Si:P	[111] ±0.5°	6″	380 ±15	P/P	FZ >3,000	SEMI Prime, hard cst
94	n-type Si:P	[112–5° towards[11–1]] ±0.5°	6″	880 ±10	P/P	FZ >3,000	SEMI, 1 JEIDA Flat (47.5mm), Empak cst, TTV<4μm, Lifetime>1,000μs
95	n-type Si:P	[112–5° towards[11–1]] ±0.5°	6″	950 ±10	P/P	FZ >3,000	SEMI, 1 JEIDA Flat (47.5mm), Empak cst, TTV<4μm, Lifetime>1,000μs
96	n-type Si:P	[100]	6″	750	P/P	5–35	SEMI Prime, 1Flat(57.5mm), TTV<2μm, TIR<1μm, Bow<10μm, Warp<20μm, Wafers await final polished, Empak cst