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Tegal 903e plasma dry etch

The Tegal 903e plasma dry etch semiconductor equipment were made by Tegal Corporation  and represents the Industry Standard in single-wafer Dry Etch of Polysilicon, Nitride, Silicon Oxide  and the mainstay of the highly successful plasma etch system.

The Tegal 903e plasma etcher plasma etch semiconductor equipment are used by the semiconductor industry for integrated circuit fabrication. The Tegal 903e etcher semiconductor equipment are used in one part of the sequence of manufacturing steps that transfer a pattern formed from a layer of photosensitive material, the photoresist, to a layer that makes up a permanent part of the finished device.

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Description

SOLD. Please refer to other  Plasma Etch equipment.

Model: Tegal 903e plasma dry etch semiconductor process equipment

Category:  Plasma Etch

Original Equipment Manufacturer: Tegal Corp.

Condition: Complete, working condition. The system was de-installed from a Fab in USA in July, 2016.

Wafer Size: 6 inch configuration.

Gas Lines: 4

Monitor: Upgraded LCD monitor

UPC: Yes

Valid Time: Subject to prior sale without notice

Lead Time: Ready to go

Location: Silicon Valley, CA, U.S.A.

Warranty and refund: N/A

Tegal 903e plasma dry etch description for reference

The Tegal 903e plasma dry etch semiconductor equipment were made by Tegal Corporation  and represents the Industry Standard in single-wafer Dry Etch of Polysilicon, Nitride, Silicon Oxide  and the mainstay of the highly successful plasma etch system.

The Tegal 903e plasma dry etch semiconductor equipment are used by the semiconductor industry for integrated circuit fabrication. The Tegal 903e plasma etcher plasma etch semiconductor equipment are used in one part of the sequence of manufacturing steps that transfer a pattern formed from a layer of photosensitive material, the photoresist, to a layer that makes up a permanent part of the finished device.

Wafers in the Tegal 903e plasma dry etch semiconductor equipment are transported to a Reaction Chamber. A gas mixture is introduced into the Reaction Chamber, and the gas mixture is caused to become reactive by the application of radio frequency (RF) electromagnetic radiation. The reactive mixture, or plasma, etches away material that is not covered by the masking photoresist. The etch process is terminated at an appropriate time, the wafer is unloaded from the Reaction Chamber, and a new wafer is introduced. The cycle repeats.

The Tegal 903e plasma dry etch semiconductor equipment Plasma/RlE etchers have been configured to take advantage of the characteristics of plasmas for etching various films. Each of the models in the 90Xe family have been optimized for specific etches of specific films. All models have the common ability to implement multi-step etch recipes using multiple process gases. An optical monitoring system provides a means for determining etch completion so that the etch process may be terminated.

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