Surface Technology Systems STS ICP RIE

Description

Please contact us if you are interested in the Surface Technology Systems STS ICP RIE. The Surface Technology Systems STS ICP RIE is only for end users and are subject to prior sale without notice. Appreciate your time.

Surface Technology Systems STS ICP RIE is an Inductively Coupled Plasma etching system and characterized with high plasma density, low operating pressure, high etch rate, excellent etch uniformity, and low energy ion damage. Major features include:

Applications:
Etching silicon-based materials, boron nitride, and other compatible 2-D materials.

Features:

· ICP power up to 1,500 W

· RF bias up to 300 W

· Available gases: SF6, C4F8, CHF3, CF4, H2, Cl2, HBr, BCl3, Ar, O2, and N2

· Substrate temperatures from 10 °C to 30 °C

· Handling 6″ or smaller samples

Available Processes:

· High aspect ratio Si pillars

· Si nano-wires and nano-needles

· Si micro holes

· Si trenches