Description
STE RTA100 Rapid Thermal Annealing System SemiTEq JSC
Condition: Used. We sell it at AS IS,WHERE IS.
Description for your reference only.
System for rapid thermal annealing process of semiconductor wafers in inert atmosphere
System is intended for R&D activities and pilot production. Maximum diameter of wafers is 100 mm. Wafer is loaded to the chamber manually through the side quick access door and placed on heat-compensating table made of pyrolytic graphite. There is a heater based on the system of linear halogen lamps under the table. This design ensures uniform wafer heating, having heterogeneous absorption of infrared emission along its surface (for example, wafer with formed topology).
The system allows carrying out relatively short-time processes with the temperature up to 900°С and maximum heating rate up to 40°С/sec. Annealing time at maximum temperature is up to 10 minutes. The chamber is made of stainless steeland has water cooled walls. Quartz viewport is provided for monitoring the sample during loading and annealing (also can be used for installation of IR pyrometer).
• continuous purging by inert gas wafer annealing
• automatic maintaining of preset pressure level inside the chamber during the process
• control of heating rate by thyristor regulation system
• automated pumping and gas purging of the chamber, allowing to carry out the process by «one button push»
• multi-stage annealing process by built-in PID controller
• monitoring of the heating table temperature by two control thermocouples
• optical pyrometer for additional control of wafer surface temperature (option), possibility of X-Y temperature scanning along wafer surface through the quartz window
• preliminary pumping of process chamber by membrane or optional scroll pump
• high run-to run reproducibility
• easy operation and maintenance
| Ultimate pressure, Torr | <10 |
| Pumping speed, m3/hour | 5 |
| Water cooling of reactor walls | (B) |
| Max. diameter of wafer, mm | 100 |
| Max. heating rate, °С/sec | 40 |
| Max. heating temperature, °С | 900 |
| Heating uniformity for 100 mm wafer, % | ±1 |
| Annealing in vacuum | x |
| Annealing in oxygen | x |
| Quantity of thermocouples, pcs. | 2 |
| Optical pyrometer | (О) |
| Full automation of annealing process | (B) |
This Item is subject to prior sale without notice.Photos are only for reference.
