NRE-4000 Reactive Ion Etching

Description

NRE-4000 without loadlock

NANO-MASTER’s NRE-4000 is a stand alone Reactive Ion Etching (RIE) system with showerhead gas distribution and water cooled RF platen. It has a stainless steel cabinet and a 13″ cylindrical aluminum chamber that opens from the top for wafer loading. It can accept up to 8″ (200 mm) wafers. The chamber has two ports, one with a 2″ window the other with a blank off for diagnostic equipment such end point detection. The chamber is extremely clean in design and reaches a base pressure in the 5×10-7Torr range or lower depending on the pumping package. It can be operated in the pressure range of 20mTorr to 8Torr. The standard pumping package has a 250 l/sec corrosive turbomolecular pump, sieve filter, and a 10cfm PFPE prepared backing pump. The RF power is provided by 600W 13.5MHz power supply, and an auto-tuner. The substrate DC bias is continuously monitored and reaches as high as -500V, which is important for anisotropic etching. The system is PC controlled recipe driven giving maximum flexibility to user while maintaining high reproducibility.

NRE-4000 with loadlock

The system is PC controlled which allows for complete automation of the system and recipes. The real time system pressure and DC bias are displayed in graphic format, while the flow and power are displayed in alpha numeric format. Four levels of authorization Auto, Engineering, Process and Maintenance prevents unauthorized use of the system while giving maximum flexibility to user for setting up recipes in Process mode and running in Auto mode with high reproducibility. Auto load and unload is available for single wafers and cassette to cassette. Other options include high temperature platens and a larger chamber to handle 12” (300mm) wafers.

• 13” aluminum hard anodized chamber
• Showerhead gas distribution
• Up to 200mm substrates
• MFC’s with SS gas lines
• DC Bias: up to -500V self bias, up to -1000V external bias
• Automatic pressure control
• 600W RF power supply with auto tuner
• Water cooled or heated (400°C) platen
• 250l/sec corrosive turbomolecular pump with suitable backing pump
• Fully automated PC based, recipe driven
• LabVIEW user interface
• Fully safety interlocked

Options

• NM-ICP downstream high density plasma source for high rate etching
• Plasma source for isotropic etching
• He backside cooling with mechanical clamp for DRIE
• Additional MFC’s
• 8 or 12 line Gas Box
• Single wafer and cassette to cassette auto load/unload
• Substrate cooling down to -20°C and heating up to 200°C
• Spectroscopic End Point Detector
• Electostatic chuck
• 12″ wafer chamber
• Dry Pump
• Dural chamber systems:

NRP-4000 Dual PECVD/RIE System with ICP Source and Auto Load/Unload	PECVD/RIE System
RIE/Sputter System	Ion Beam / RIE System

Applications:

• Compound Semiconductors
• GaAs sensor
• Photonics
• MEMS device fabrication
• Deep trenches in silicon etching
• Plasma dicing for advanced packaging
• Etching Visa for TSV fabrication
• High precision motion sensors
• Nano Scale etching and microfluidics
• Photo resist stripping
• Etching of dielectric, silicon-based, sputtered metals and DLC films

GENERAL SPECIFICATIONS

1. Maximum Substrate Size: 8”
2. Substrate Temperature Range: Up to 200°C
3. Gas Lines: Heated and Electropolished
4. MFCs: Up to 8 MFCs
5. System Control: PC Controlled with LabVIEW and Touchscreen User Interface
6. Loading and Unloding: Manual or Automatic

FACILITY REQUIREMENTS

1. Power Input: 208V/380V/415V, 20A/Phase, 50/60Hz
2. Chilled Water: 2gpm @ 50psi, 18°C
3. Compressed Air: 1/4” Swagelok, 80-90 PSI
4. Processed Gas: 1/4” Swagelok, 20 PSIG
5. Nitrogen: 1/4“ Swagelok, 10 PSIG
6. Exhaust (System): NW25

DIMENSIONS (Width ,Depth ,Height)

1. NRE-4000 : 26” ,44” ,60”
2. NRE-3500 :  26” ,26” ,60”
3. NRE-3000 :  26” ,26” ,32”

NRE-4000	NRE-3500	NRE-3000

The trademarks of the equipment and parts contained on this page belong to the Original Equipment Manufacturers.

Nano-Master Main Equipment: Thin Film |  Etch | Cleaning | Space Simulation | Hybrid

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