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Glow Research Plasma etcher, RIE system, plasma asher, plasma etcher

Description

Glow Research Plasma etcher, RIE system, plasma asher, plasma etcher

The ST1200 chamber is a two piece clam-shell type. The material to be etched is placed on the powered bottom electrode. Designed to ensure anisotropic etching and maximize selectivity, uniformity, and speed..
· Process gas showerhead is designed for laminar flow of process gas over the entire etching area.
· Annular gas exit through the bottom/center throat of the lower chamber–to ensure equal and proper gas flow without turbulence (improved uniformity and less particles).
· The size ratio of the small powered electrode to the larger ground electrode produces a negative DC bias which enhances ion bombardment and anisotropy.
· A dark space shield focuses the plasma on the bottom electrode, thus optimizing power utilization.
· The bottom electrode is water cooled to maintain the sample at a low temperature during processing.
· 10” (254mm) diameter process chamber–can process 8” (200mm) or smaller wafers or substrates.
· Variable electrode spacing
· Chamber is equipped with a treated quartz viewing window for observation of the plasma process.
· Standard four (4) digital mass flow controllers
· Baratron pressure read-back
· Throttle valve for controlling chamber pressure independent of chamber pressure

· Nitrogen chamber purge—for particle reduction and sample integrity
· Soft gas introduction and soft vent/purge to reduce particles and protect substrate(s)

· 600 watt, 13.56MHz RF power (options for 1,200 or 3,000 w)
· Production Automatic RF matching network with advanced system grounding
· Automatic optical end point control
· DC bias readout

Software:
· Touchscreen control

· System preprocess self-check (MFC’s, baratron, pressure, etc.)

· Multiple step recipes—easy to configure

· Adjustable gas stabilization times, confirm MFC linearity

· Data logging, store/download historical records

· Monitor RF on/off times during process, pressure curves during process

· Access passwords for process, equipment engineering, and operator

· Stable Linux based OS and application software

· USB flash memory permits recipes to be used in multiple ST1200 systems

Options:
· 200 or 400 l/sec turbo pump with isolation valve (sits directly under the chamber)
· 1,200 watt, or 3,000 watt generator
· 45 cfm vacuum pump
· Laser or mass spectrometer end point control

· Inductively coupled Plasma (ICP) for faster and more sophisticated applications requiring more reactive species

· Heated chuck, Stainless steel or anodized aluminum chamber

· Dual generator configuration

· Lid lift assist

Specifications:
Gases: SF6, CF4, He, O2
Etch Rate is 2,000 Angstroms/min for Si3N4 and 1,500 Angstroms/min for SiO2
Uniformity:
100mm : ± 3% (max-min/(2)average)
150mm : ± 5% (max-min/(2)average
Applications:
Contact Slope Etch
Via Etch
BPSG Etch
TEOS Etch
Thermal Oxide Etch
LTO Etch
Thermal Oxide Etch
LPCVD Nitride Etch
PECVD Nitride Etch
Descum
Planarization
Photo Resist Strip (with heater)
Low Temperature Photo Resist Ashing over Oxides, Poly, Al, W, Ti or Moly
Trench Rounding
Backside Poly, Nitride, Oxide
Nitride Pattern Removal
Facilities:
Plumbed Gases…O2, CF4, He, SF6
Electrical Requirements: 208VAC, 3-Phase, 60Hz, 30Amps
Cooling: Dowfrost or equivalent

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