Description
GaAs, InP, InAs, GaSb, SiC 4H and 6H Compound wafers
GaAs wafer | ||||||||||||
Size | Type | Orientation | Spec | Surface | Quantity | Dopant | Resistivity | Mobility | EPD | growth method | OF Length | IF Length |
2 | N | (100)15 deg off toward<111>A±0.5 | 350+/-25um | SSP | 1000 | Si | (1.2—9.9) E-3 | 1000-3000 | 3000 | VGF | 17±1 | 7±1 |
2 | N | (100)2 deg off toward<111>A±0.5 | 350+/-25um | SSP | Si | (1.2—9.9) E-3 | 1000-3000 | 3000 | VGF | 17±1 | 7±1 | |
2 | N | (100)2 deg off toward<110>A±0.5 | 400+/-25um | DSP | none | 1 E8 | 4200 | 5000 | VGF | 17±1 | 7±1 | |
2 | N | -100 | 350+/-25um | DSP | none | 1 E8 | 2000 | 5000 | VGF | 17±1 | 7±1 | |
2 | N | -100 | 350+/-25um | SSP | 10 | Si | (1.2—9.9) E-3 | 1000-3000 | 3000 | VGF | 17±1 | 7±1 |
4 | N | (100)15 deg off toward<111>A±0.5 | 350+/-25um | SSP | 1000 | Si | (1.2—9.9) E-3 | 1000-3000 | 3000 | VGF | 32±1 | 18±1 |
4 | N | (100)2deg off toward<111>A±0.5 | 350+/-25um | SSP | 10 | Si | (1.2—9.9) E-3 | 1000-3000 | 3000 | VGF | 32±1 | 18±1 |
2 | P | (100)15 deg off toward<111A> | 350+/-25um | SSP | 300 | Zn | (1.2—9.9) E-3 | 1000-3000 | 5000 | VGF | 17±1 | 7±1 |
4 | Undoped | 100 | 625+/-25um | DSP | 100 | Undoped | 1 E8 | 4500 | 5000 | VGF | 32.5±1 | 18±1 |
InP wafer | ||||||||||||
Size | Type | Orientation | Spec | Surface | Quantity | Dopant | Resistivity | Mobility | EPD | growth method | OF Length | IF Length |
2 | N | (100)(111) | 350+/-25um | SSP | 50 | S | (1.5-3.5)E3 | 5000 | VGF | 16±2 | 8±1 | |
2 | N | (100)(111) | 350+/-25um | SSP | 5 | S | (1.5-3.5)E3 | 5000 | VGF | 16±2 | 8±1 | |
3 | N | (100)(111) | 600+/-25um | SSP | 43 | S | (1.5-3.5)E3 | 5000 | VGF | 22±2 | 11±1 | |
3 | N | (100)(111) | 600+/-25um | SSP | 43 | S | (1.5-3.5)E3 | 5000 | VGF | 22±2 | 11±1 | |
4 | N | (100)(111) | 625+/-25um | SSP | 32 | S | (1.5-3.5)E3 | 5000 | VGF | 32.5±2 | 18±1 | |
4 | N | (100)(111) | 625+/-25um | SSP | 32 | S | (1.5-3.5)E3 | 5000 | VGF | 32.5±2 | 18±1 | |
3 | N | (100)(111) | 600+/-25um | SSP | 0 | Fe | 1E7 Ohmcm | (1.5-3.5)E3 | 5000 | VGF | 22±2 | 11±1 |
GaSb wafer | ||||||||||||
Size | Type | Orientation | Spec | Surface | Quantity | Dopant | Resistivity | Mobility | EPD | growth method | OF Length | IF Length |
2 | N | (100)(111) | 500+/-25um | SSP | 5 | Te | 2000-3500 | 2000 | VGF | 16±2 | 8±1 | |
2 | N | (100)(111) | 500+/-25um | SSP | 4 | Te | 2000-3500 | 2000 | VGF | 16±2 | 8±1 | |
3 | N | (100)(111) | 625+/-25um | SSP | 6 | Te | 2000-3500 | 2000 | VGF | 22±2 | 11±1 | |
3 | N | (100)(111) | 625+/-25um | SSP | 6 | Te | 2000-3500 | 2000 | VGF | 22±2 | 11±1 | |
4 | N | (100)(111) | 1000+/-25um | SSP | 4 | Te | 2000-3500 | 2000 | VGF | 32.5±2 | 18±1 | |
4H SiC wafer | ||||||||||||
Size | Thickness | Orientation | OF Length | IF Length | Resistivity | Status | Ra | 4H area | MPD | TTV | Bow | Warp |
2 | 350 | 4°±0.5° | 16±2 | 8±1 | 0.015-0.03 | In stock | 1 | 80% | 25 | 30 | 45 | |
2 | 350 | 4°±0.5° | 16±2 | 8±1 | 0.015-0.03 | In stock | 1 | 95% | 25 | 30 | 45 | |
2 | 350 | 4°±0.5° | 16±2 | 8±1 | 0.015-0.03 | In stock | 0.3 | 1 | 10 | 10 | 10 | 25 |
2 | 450 | 1.5°±0.5° | 16±2 | 8±1 | 1E5 Ohm-cm | In stock | 0.3 | 100% | 10 | 10 | 10 | 25 |
2 | 330 | <0001>±0.5° | 16±2 | 8±1 | 1E5 Ohm-cm | In stock | 0.5 | 90% | 50 | 25 | 30 | 45 |
3 | 350 | <0001>±0.5° | 22.0±2.0 | 11.0±1.5 | 1E5 Ohm-cm | 2 weeks | 0.5 | 95% | 50 | 15 | 25 | 35 |
3 | 350 | 4°±0.5° | 22.0±2.0 | 11.0±1.5 | 0.015-0.03 | In stock | 0.3 | 95% | 10 | 15 | 25 | 35 |
3 | 350 | 4°±0.5° | 22.0±2.0 | 11.0±1.5 | 0.015-0.03 | In stock | 0.3 | 100% | 10 | 15 | 10 | 25 |
3 | 350 | 4°±0.5° | 22.0±2.0 | 11.0±1.5 | 0.015-0.03 | In stock | 0.3 | 95% | 10 | 15 | 10 | 35 |
4 | 350 | 4°±0.5° | 32.5±2 | 18±2 | 0.015-0.03 | In stock | 1 | 80% | 25 | 30 | 45 | |
4 | 350 | 4°±0.5° | 32.5±2 | 18±2 | 0.015-0.03 | In stock | 0.3 | 100% | 10 | 10 | 10 | 25 |
4 | 350 | 4°±0.5° | 32.5±2 | 18±2 | 0.015-0.03 | In stock | 0.3 | 95% | 10 | 15 | 25 | 35 |
6H SiC wafer | ||||||||||||
Size | Thickness | Orientation | OF Length | IF Length | Resistivity | Status | Ra | Usable area | MPD | TTV | Bow | Warp |
2 | 330 | <0001>±0.5° | 15.9±1.7 | 8±1.7 | 0.02 ~0.1 O·cm | 1 | 95% | 25 | 30 | 45 | ||
InAs wafer | ||||||||||||
Size | Type | Orientation | Spec | Surface | Quantity | Dopant | Resistivity | Mobility | EPD | growth method | OF Length | IF Length |
2 | N | -100 | 500+/-25um | SSP | 5 | Zn/S | 6000-20000 | 50000 | VGF | 16±2 | 8±1 | |
3 | N | -100 | 625+/-25um | SSP | 6 | Zn/S | 6000-20000 | 50000 | VGF | 22±2 | 11±1 | |
4 | N | -100 | 1000+/-25um | SSP | 4 | Zn/S | 6000-20000 | 50000 | VGF | 32.5±2 | 18±1 |
The items are subject to prior sale without notice. These items are only for end users.
Minimum Order: TBD
Lead time: TBD
Unit Price: Please contact us.
SS5594-1-3-1-1