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Branson IPC L3200

 The Branson IPC L3200 Photoresist Stripper combines the control capability of single wafer processing with the throughput typical of batch systems. Downstream plasma stripping technology, low-particulate handling and processing features, as well as an oxygen-only process ensure high yields. The Branson/IPC L3200 is self-diagnostic, and can store up to 26 recipes. This dual-chamber, dual-cassette system provides throughputs of up to 60 six-inch wafers per hour with minimal particle generation.

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Description

Model: Branson IPC L3200 Plasma Etching semiconductor process equipment

Category:  Plasma Asher Plasma Descum

Original Equipment Manufacturer: Branson/IPC  ( Branson International Plasma Corporation )

Condition: Parts Machine. We sell it at AS IS,WHERE IS ( Refurbished by seller is optional at extra charge)

Wafer Size: 8 inch configuration.

Valid Time: Subject to prior sale

Lead Time: Ready to go

Location: Silicon Valley, CA, U.S.A.

Warranty and refund: N/A

 

Branson IPC L3200  Plasma etching description for reference only

 The Branson IPC L3200 Photoresist Stripper combines the control capability of single wafer processing with the throughput typical of batch systems. Downstream plasma stripping technology, low-particulate handling and processing features, as well as an oxygen-only process ensure high yields. The Branson/IPC L3200 is self-diagnostic, and can store up to 26 recipes. This dual-chamber, dual-cassette system provides throughputs of up to 60 six-inch wafers per hour with minimal particle generation.
The system is also designed for reliability and serviceability. It features software fault diagnostics and easy service access from the rear. The Branson IPC L3200 will fit into the fully automated fab via the SECS I and II interface to a host computer.
The Branson IPC L3200 system is designed to process wafers from 4 to 6 inches (100 to 150 mm) in diameter, or 4 to 8 inch wafers, depending on your configuration. 

Why strip with a high-performance single•wafer system?
Wafer control, repeatability of process results, and throughput rivalling that of batch processing are some advantages of the Branson IPC L3200  Plasma etching  system. Yields will increase because of tighter manufacturing control, reduced contamination, low wafer damage, and greater uniformity of strip.

Because the size and value of the individual wafer are increasing, it is crucial to maximize control of the process and reduce the risk of damage to the wafer. A single-wafer process gives significantly better control than a batch system. Uniformity of strip is optimized in a single-wafer system.Process recipes can be prepared, then run automatically. A recipe can subject each wafer to as many as three consecutive process cycles. Each process cycle can be separately programmed for the process parameter values (wafer preheat, gas flow and pressure, RF power, and end-of-process).
The dual cassette arrangement was incorporated to reduce wafer contamination. In the Branson IPC L3200 system, a newly stripped wafer is transferred to a clean cassette instead of being placed back into the sender cassette, which is likely to contain particulates. In addition, the wafers are stacked in inverse order in the receiver cassette, so that the newly placed wafer does not drop particulates on wafers below. If desired, the wafers can be stacked back into the sender cassette at the end of a run.
Slow pumpdown and slow purge are other features that reduce contamination. In slow pumpdown, the process chamber is evacuated starting with the throttle valve closed. As pumpdown progresses, the throttle valve opens. This procedure avoids stirring up particulates with a rapid pulse of vacuum. In slow purge, clean nitrogen gas is admitted to the process chamber through a metering valve to bring the chamber slowly back to atmospheric pressure. This procedure again avoids stirring up particles with a sudden inrush of gas.
Automation (smooth pick-and-place handling) reduces human handling and associated contamination.
Chance of ion damage is minimized because of the arrangement of the chamber. Using a plasma system with downstream stripping technology allows low radiation damage.
The Branson IPC L3200  Single Wafer Stripper was designed with two chambers to increase throughput. While one wafer is being staged and its chamber prepared for processing, another wafer is being stripped. Dual-chamber stripping maximizes the efficiency and speed of the single-wafer system.
Preheating the wafer with a heat lamp is another Branson/IPC L32000 design feature that promotes  fast processing. Each chamber contains a 2000 W lamp that can be turned on at the beginning of the process to bring the wafer to an ideal temperature for stripping.

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