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2003 Cl2 Plasmalab 133+ RIE

Description

Refurbished Oxford PlasmaLab System 133+ RIE Reactive Ion Etcher

SemiStar Corp. offers one refurbished Oxford PlasmaLab System 133+ RIE Reactive Ion Etcher configured for GaN and compound semiconductor plasma etching applications. The system is located in Nanjing, Jiangsu, China and is available in refurbished condition with OEM specifications, warranty, and installation support if necessary.

The Oxford PlasmaLab System 133+ RIE platform is designed for advanced semiconductor plasma etching applications including GaN, III-V compound semiconductor materials, dielectric etching, MEMS process development, and university or pilot production plasma processing environments.

Product photos are for reference only. Actual system configuration, accessories, utilities, installed options, software version, and cosmetic condition should be confirmed by SemiStar’s final quotation and inspection report.

Availability

Equipment Model Oxford PlasmaLab System 133+ RIE
Equipment Type Reactive Ion Etcher (RIE)
Category RIE / Plasma Etcher / Compound Semiconductor Etch System
Manufacturer / OEM Oxford Instruments Plasma Technology
Model Year 2003
Serial Number 417718
Condition Refurbished with OEM specifications, warranty, installation if necessary
Quantity 1 system
Location Nanjing, Jiangsu, China
Availability Subject to prior sale without notice
Price Contact SemiStar by filling out the inquiry form below

System Description

The Oxford PlasmaLab System 133+ RIE is a high-performance reactive ion etching platform configured for advanced GaN and compound semiconductor plasma etching applications. The system supports large substrate processing up to 300 mm wafers and includes advanced endpoint detection capability and load lock vacuum transfer architecture.

The system is suitable for semiconductor research institutes, university cleanrooms, compound semiconductor fabs, MEMS facilities, pilot production environments, and advanced plasma process development applications.

Current Configuration

  • Oxford PlasmaLab System 133+ RIE Reactive Ion Etcher
  • Supports wafer sizes up to 300 mm
  • 330 mm platen configuration
  • Configured for GaN plasma etching applications
  • 600 W RF generator
  • 13.56 MHz RF plasma architecture
  • Water-cooled electrode system
  • Electrode temperature range: 10°C to 80°C
  • Load lock with turbo pump
  • Verity Optical Emission Spectroscopy endpoint detection
  • Windows PC with user-friendly interface
  • 6-line gas pod configuration

Installed Gas Configuration

Gas MFC Range
Argon (Ar) 100 SCCM
Chlorine (Cl2) 100 SCCM
Boron Trichloride (BCl3) 100 SCCM
Nitrous Oxide (N2O) 100 SCCM

The gas pod includes 6 gas lines with installed MFCs as listed above. Final gas assignment and unused gas line configuration should be confirmed during final inspection.

Endpoint Detection System

  • Verity Optical Emission Spectroscopy (OES)
  • Spectral range: 200–800 nm
  • Real-time plasma endpoint monitoring capability
  • Advanced process control capability

RF Power and Process Information

  • RF Power: 600 W
  • RF Frequency: 13.56 MHz
  • Reactive Ion Etching (RIE) plasma architecture
  • Water-cooled electrode system
  • Electrode temperature range: 10°C to 80°C
  • Suitable for GaN and compound semiconductor plasma etching

Vacuum and Load Lock Configuration

  • Load lock configuration
  • Turbo pump vacuum architecture
  • Reduced chamber contamination exposure
  • Improved vacuum stability and process repeatability

Typical Applications

  • GaN plasma etching
  • Compound semiconductor processing
  • III-V semiconductor plasma etching
  • MEMS process development
  • Dielectric plasma etching
  • Research and pilot production plasma processing
  • Advanced semiconductor dry etching
  • University and R&D cleanroom applications

Wafer Capability

  • Supports wafer sizes up to 300 mm
  • 330 mm platen configuration
  • Large substrate plasma processing capability
  • Suitable for advanced semiconductor and compound semiconductor applications

Control System

  • Windows PC controller
  • User-friendly graphical interface
  • Recipe management capability
  • Process monitoring and control capability
  • Data logging capability

Facility Requirements

  • Electrical power requirements to be confirmed during final configuration review
  • Process gas cabinets and gas delivery systems required
  • Vacuum pump and exhaust requirements to be reviewed
  • Cooling water/chiller requirements required
  • Facility exhaust and scrubber compatibility required
  • Customer responsible for utilities, facility preparation, gas safety systems, exhaust, abatement, and local code compliance unless specifically included in quotation

Refurbishment and Support

SemiStar can provide the equipment in refurbished condition with OEM specifications. Refurbishment scope, functional testing, installation, training, utilities integration, and warranty scope will be confirmed based on the final purchase order and customer requirements.

Installation, startup assistance, and training support are available if necessary.

RFQ Information Requested

To help us recommend the best final configuration and support scope, please provide:

  • Substrate size and material
  • Target plasma etch application
  • Required plasma chemistry
  • Expected etch profile and process targets
  • Facility readiness and utility information
  • Required installation or startup support
  • Expected purchase timeline and budget range

Important Notes

  • Subject to prior sale without notice.
  • Final specifications subject to SemiStar official quotation and inspection confirmation.
  • All OEM names, trademarks, and model names belong to their respective owners.
  • SemiStar is not the OEM. Product information is provided for reference only and should not be used as final purchase specifications.
  • Final purchase specifications, refurbishment scope, warranty terms, installation scope, and commercial terms must follow SemiStar’s official quotation.

Contact SemiStar

Please contact us for more information on the product:

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