The following are the operating specifications for the AG Associates Heatpulse 8108 Rapid Thermal Processor.
• Wafer handling: automatic serial processing, using standard cassettes.
• Throughput: Process dependent, approximately 80 wafers per hour (in a
null cycle) without flat-finder.
• Wafer sizes: 5 inches, 6 inches, and 8 inches (standard).
• Ramp-up rate: Programmable, 1 – 180°C per second.
• Steady-state duration: 1 – 600 seconds per step.
• Ramp-down rate: Programmable, 1 – 180°C per second. Ramp-down rate is temperature and radiation dependent, maximum 150°C per second.
• Recommended steady-state temperature range: 400 – 1200°C.
• ERP temperature accuracy: +3°C to -7°C, when calibrated against an instrumented thermocouple wafer (ITC).
• Temperature repeatability: + 3°C or better at 1150°C wafer to wafer.(Repetition specifications are based on a 100-wafer set.)
• Temperature uniformity: + 5°C across an 8-inch wafer at 1150°C. (This is a 1-sigma deviation from 100-angstrom oxide uniformity.) For a titanium silicidation process, no more than 1.5 percent increase to uniformity during the first anneal at 650 – 700°C.
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