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Stochiometric Silicon Nitride LPCVD

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Stochiometric Silicon Nitride LPCVD

  • Typical film thickness: 0.1 – 2 µm
  • Refractive index at 550 nm / 1.98 – 2.0
  • Batch Size: 50
  • Deposition rate: 3 – 4.5 nm/min
  • Gases: dichlorosilane, ammonia
  • Uniformity: ± 3%
  • Residual Stress: 1000 – 1250 MPa
  • Deposition Gas Ratio: 3:1
  • Deposition Temperature: 800 – 830 °C Gradient

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