TYTAN 4600 ATMOSPHERIC PLCVD

Description

Model: TYTAN 4600 ATMOSPHERIC PLCVD, TYTAN MINI SERIES for diffusion, oxidation and LPCVD applications

OVERVIEW

APPLICATIONS

SPECIFICATIONS

PROCESSES

UTILITIES

TYSTAR GUARANTEED PROCESS SPECIFICATIONS

Notes on Tystar Process Guaranty:
1. Confidentiality : The contents and data presented in this document and attachments are provided solely for intended recipients and may
contain confidential or privileged information. Disclosure, duplication, use, or distribution of any portion of this report and attachments is
strictly prohibited.
2. Disclaimer: Tystar Corporation is not responsible for any loss, injury, disruption or damage that may result from using data contained herein.
3. Reference Wafer Size (200 mm): For smaller wafers, better or comparable uniformity may be achieved.
4. Definition of Non-uniformity: One standard deviation from the average value.
5. Wafer load:

50 wafers in 18” LPCVD flat zone
100 wafers in 34” LPCVD flat zone
100 wafers in 18” AP flat zone
200 wafers in 34” AP flat zone

6. Variability: Each data presented in the attached sheet is only guaranteed for a process demonstration to be performed under a certain reference process condition. The actual data may vary depending on the choice of customer’s process condition.
7. Resistivity Data: Unless specifically mentioned, the non-uniformity refers to thickness non-uniformity. For POCl3 and Doped Poly, the
non-uniformity refers to resistivity non-uniformity.

8. Best Process Guaranty: Tystar has an extensive library of process data and offers the best process guaranty. No comparisons should be
made of Tystar data to others’ data without careful regards to specific process conditions because Tystar’s superior furnace design is much different than others in terms of temperature control, pressure control and gas flows.

Table : Tystar Standard Process Veriﬁcation
PROCESS TEMP THICKNESS			RESISTANCE	NONUNIFRMITY
	°C	nm	Ω/口	in wafer	W to W	R to R
ATMOSPHERIC
pyro oxidation	1,000	500	N/A	2%	2%	2%
		< 50	N/A	4%	4%	4%
dry oxidation	1,100	500	N/A	2%	2%	2%
		< 50	N/A	4%	4%	4%
POCl3	950	N/A	10	10%	10%	10%
BBr3	950	N/A	10	10%	10%	10%
LPCVD
Si3N4	790	150	N/A	3%	3%	3%
LSN	840	150	N/A	3%	5%	3%
polysilicon	620	300	N/A	3%	3%	3%
ﬂat poly	620	300	N/A	3%	10%	3%
doped poly	620	300	N/A	5%	10%	5%
LTO	450	450	N/A	5%	5%	5%
DLTO	450	450	N/A	5%	10%	5%
BPSG	450	450	N/A	5%	10%	5%
TEOS	725	450	N/A	5%	5%	5%
HTO	725	450	N/A	5%	5%	5%
SiC	800	300	N/A	5%	5%	5%
SiGe	725	450	N/A	5%	5%	5%