Description
Tystar Equipment: MINI SERIES | STANDARD SERIES | NANO SEREIS | SOLAR SERIES | Photo-Enhanced CVD | Tystar Instruments: GAS CONTROL| MASS FLOW TESTER | FLOW CALIBRATOR
Model: Tystar PVD 1000 Photo-Enhanced CVD Reactor
Equipment info for your reference.
The Tystar PVD 1000 Photo-Enhanced CVD Reactor uses ultraviolet light as an energy source for activating process gases for the deposition of dielectric films at low temperatures (<150 °C). Films of silicon-dioxide (SiO2), silicon nitride (Si3N4), silicon oxy-nitride (SiON) and others can be deposited. Minimal stress is observed in these films due to the low deposition temperature. Since the UV photon energy used does not ionize the process gases, no radiation damage from charged particles has been observed.
One of the characteristics of a good semiconductor film, alongside sparsity of pin holes, is conformal step coverage. A smooth and conformal film similar to the SiO2 film in the SEM image shown above ensures minimal electromigration and resistant pathways. This is one of the benefits of using a PVD-1000 system in thin film deposition.
The PVD 1000 deposited films offer excellent step coverage. The PVD 1000 system is available with single or dual-process chambers. The PVD 1000 reactor is used in a variety of applications for film deposition on “III/V” materials, such as gallium arsenide, indium antimonide and other materials that cannot tolerate higher deposition temperatures.
| PVD 1000 Process Data | Si3N4 | SiO2 |
| Thickness Umforrn1ly Across Substrate | < ±8% | < ±5% |
| Thickness Repeatability | < ±5% | < ±3% |
| Deposit o Rate (1 50°C, 1 Torr) | 60 A/min. | 120 A/min. |
| Cycle Time ( 500A) | 55 min. | 45 min. |
| Substrate Temperature | 50 – 250°C | 50 – 250°C |
| Reactor Pressure | 0.3 – 0.5 Torr | 0.3 – 1 Torr |
| PVD 1000 Film Characteristics (TYPICAL DATA) | Si3N4 | SiO2 |
| Film Density | 1.8 – 2.4 g/cm3 | 2.10 g/cm3 |
| Refractive Index | 1.8 – 2.0 | 1.45 – 1.48 |
| Dielectric Constant | 5.5 | 3.9 |
| Dielectric Strength | 4 x 106 V/cm | 6 x 106 V/cm |
| Particle Density | < 10/cm2 | < 10/cm2 |
| Film Adhesion (Tension) | 7 x 106 Pa | 70 x 106 Pa |
| Etch Rate | 60 – 100 Å/sec. 1) 1) 1 :10HF | 90 Å/sec. 2) 2) B.O.E. |
PVD 1000 REACTOR SPECIFICATIONS
- Dimension :
- Height 46 in. / 1168 mm;
- Depth 28 in. / 711 mm;
- Width 81 in. / 2057 mm
- Dimensions do not include leveler feet, blower module, control console, electrical box, or other peripherals.
- Weight 970 lbs. / 427 kg
- Electrical Power, Input Power:
- 208/220 VAC, 3 Phase, 40 A, 60 Hz;
- 220/380 VAC 3 Phase, 25 A, 50 Hz
- Gas Supplies Reactant Gases
- Fittings: 1 /4″ Metal Face Seals (VCR)
- SiH4 20 seem / 15 psi
- NH3 200 seem / 20 psi
- N20 200 seem / 20 psi
Tystar is a leading manufacturer of horizontal Low Pressure Chemical Vapor Deposition (LPCVD) diffusion furnaces and specialized Chemical Vapor Deposition (CVD) systems for the semiconductor industry. Our process tools have served research, engineering, and production of integrated circuits, MEMS, optoelectric devices, and other semiconductor materials for over 50 years.
The trademarks of the equipment and parts contained on this page belong to the Original Equipment Manufacturers.
Please provide info below for an official quotation with the following form. Appreciate your time.
- Substrate size, shape, thickness, materials:
- Voltage (208V, 220V, 240V, 380V,415V,480V, Unsure):
- AC Frequency (50Hz, 60Hz, Unsure):
- Number of Chambers (1,2):
- Chamber Process Type (SixOyNz – Silicon Oxynitride; SixNy – Silicon Nitride; SixOy – Silicon Oxide):
- Chamber 1 :
- Chamber 2:
- Purchase Time Limit (1-3 months, 4-6 months, 6+ months, Unsure):
- Did you use any Furnace/LPCVD which met your requirements of your applications? If yes, which model and brand?
