Plasma-Therm 73/74 PECVD/Plasma Etch/Reactive Ion Etch

Description

Please contact us for the availability of the Plasma-Therm 73/74 PECVD/Plasma Etch/Reactive Ion Etch used Semiconductor Equipment.

Manufacturer	Plasma-Therm
Model	73/74
Wafer Size Range
Maximum	200 mm
Process	PECVD/Plasma Etch/Reactive Ion Etch
Controller Type	Microprocessor Controller Type
Interface	I/O Port
Roughing Pump	RUVAC WSU 251
Number of Gas Inputs	Eight Gas
Other Information	System Features: RF Plasma RF-5 generator MKS Type 252A exhaust valve controller Watlow Series 808 electric heater control RF Plasma AM-5 Automatching network (700) Leybold WSU251/D65BCS roots pumping system Tek-Temp TKD100/4000 chiller Brooks 5850E Mass Flow Controllers: Etch: N2(100 sccm),CHF3(200 sccm), Cl2(100 sccm), BCl3(100 sccm) Dep: N2(2000 sccm),N2(2000 sccm),N2(2000 sccm), NH3(sccm)

The items are subject to prior sale without notice. These items are only for end users.

SS5732