OXFORD Ionfab 300 Plus Ion beam etch and deposition system, 4-8

Description

This item was sold. We do have two available. Pls contact us to check the availaability. These are only for end user and are subject to prior sale. Appreciate your time!! ID-OEM-Model-3&4

OXFORD Ionfab 300 Plus Ion beam etch and deposition system, 4-8″

Typical applications and materials:
IR detectors
CdHgTe (CMT) etch
VOx deposition and etch
Metal contact and track etch
Cu, Ni, Al…
Noble metals: Au, Pt, Pd…
Diffraction gratings
SiO2 ‘blazed’ etch
Spintronics and MRAM
AR and HR coatings for laser bars
Telecom filters
III-V photonics etching
Thin film magnetic hard disk heads (TFMH)

CE marked
Cassette to cassette
Single wafer possibility
(2) Ion sources: can be used for etching / deposition
Cryopump

Functionality in multiple modes:
Ion Beam Etching (IBE)
Reactive Ion Beam Etching (RIBE)
Reactive Ion Beam Deposition (RIBD)
Chemically Assisted Ion Beam Etching (CAIBE)
Ion Beam Sputter Deposition (IBSD)
Ion Assisted Sputter Deposition (IASD)

Flexibility:
Ability to clamp any shape, and design unique carrier plates
Wafer handling options
Manual loading for one-off trials
Load-lock for faster trials
Cassette-to-cassette loading/unloading for batch production
Clusterable with other process tools including Oxford Instruments’ PlasmaPro plasma etch, deposition and sputtering tools, and FlexAL atomic layer deposition (ALD) tool
Simple upgrade options to add etch and deposition sources

Ion source:
Leading ion source and grid set technology
Grids are designed to suit specific applications: high uniformity, high rate, & low energy
Specific deposition grid sets to suit multiple targets
Full range of etch source options up to 35cm
Dual beam configurations (etch plus deposition source) offer the possibility to add capping layer immediately after etch, without exposing the process chamber or wafer to atmosphere
Increased deposition rates by using etch source as a plasma radical source (IASD)

Flexibility in a single tool:
Tiltable substrate holder can be angled from -90° up to +75° (depending upon configuration)
Enables ‘blazed’ gratings
Allows sidewalls to be cleaned off or etched
Angle control of substrate relative to deposition target

Platen rotation speed:
Variable platen rotation speed enables deposition rate to be controlled specifically for the application
Standard and high speed platen options

Substrate cooling:
Prevents degradation of substrate and devices structures/other materials already in place
Option for wafer backside cooling with He (turbo-pump) or Ar (cryo-pump)

Process monitoring:
Etch endpoint monitoring by SIMS for multi-material applications
Deposition process monitoring
Crystal monitor (single or dual head)
White Light Optical Monitor (WLOM)
Chamber gas identification, partial pressure control and leak checking via RGA