Description

3″ Si Wafers (3 inch Si wafers)

Note: Surface – P = Polished, E = Etched, C = AsCut, Ox = Oxide (on that layer); Material – CZ unless noted

Note: Items sold in quantities of 25, unless noted. Please email us to check the availability , price and lead time etc.

Item	Material	Orient.	Diam	Thck	Surf.	Resistivity	Comment
Item	Material	Orient.	(mm)	(μm)	Surf.	Ωcm	Comment
1	P/B	[100]	3″	380um	P/E	0-100 ohm-cm	Test Grade with flat
2	N/Ph	[100]	3″	380um	P/E	0-100 ohm-cm	Test Grade with flat
3	ANY	[ANY]	3″	380um	P/E	ANY	Mech Grade for Spin Coating
4	P/B	[100]	3″	380um	P/E	1-10 ohm-cm	Prime Grade 2 Flats
5	N/Ph	[100]	3″	380um	P/E	1-10 ohm-cm	Prime Grade 2 Flats
6	N/Ph	[100]	3″	500um	P/E	3.6-5.4 ohm-cm	Test Grade with flat
7	P/B	[100]	3″	380um	P/E	0.001-0.005 ohm-cm	Prime
8	p-type Si:B	[110] ±0.5°	3″	325	P/E	FZ 100–200	SEMI Prime, 2Flats, Empak cst
9	p-type Si:B	[110] ±0.5°	3″	325	P/E	FZ 100–200	SEMI Prime, 2Flats, Empak cst
10	p-type Si:B	[100]	3″	160 ±10	P/P	FZ 0.5–10.0	SEMI Test, 1Flat, Soft cst, Scratched, unsealed defects. Can be repolished for additional fee
11	p-type Si:B	[100] ±1°	3″	320	P/P	FZ 0.5–10.0	SEMI Prime, Empak cst, TTV<1μm
12	p-type Si:B	[111] ±0.5°	3″	380	P/E	FZ 8,000–10,000	SEMI TEST (has scratches), 1Flat, in hard cst
13	p-type Si:B	[111] ±0.5°	3″	475	P/E	FZ >4,400	SEMI Prime, 1Flat, Empak cst, TTV<5μm
14	p-type Si:B	[111] ±0.5°	3″	475	P/E	FZ >4,400	SEMI Prime, 1Flat, Empak cst, TTV<5μm
15	p-type Si:B	[111] ±0.25°	3″	400	P/E	FZ >100	SEMI Prime, 1Flat, Empak cst
16	n-type Si:P	[100]	3″	265	P/E	FZ >10,000	SEMI Prime, Empak cst, Backside Acid Etched.
17	n-type Si:P	[100]	3″	380	P/P	FZ 7,000–18,000	SEMI Prime, 2Flats, Empak cst
18	n-type Si:P	[100]	3″	380	P/P	FZ 5,000–8,000	SEMI Prime, 2Flats, Empak cst
19	n-type Si:P	[100] ±0.1°	3″	380	P/E	FZ >5,000	SEMI Prime, 1Flat, Empak cst
20	n-type Si:P	[100] ±0.1°	3″	380	P/E	FZ >5,000	SEMI Prime, 1Flat, Empak cst
21	n-type Si:P	[100]	3″	381	P/P	FZ 100–500	SEMI Prime, 2Flats, Empak cst
22	n-type Si:P	[100]	3″	381	P/P	FZ 100–500	SEMI Prime, 2Flats, Empak cst
23	n-type Si:P	[100]	3″	525	E/E	FZ 100–500	SEMI Prime, 2Flats, Empak cst
24	n-type Si:P	[100]	3″	300	P/P	FZ 45–52	SEMI Prime, 2Flats, Empak cst
25	n-type Si:P	[100]	3″	300	P/P	FZ 45–52	SEMI Prime, 2Flats, in Empak cassettes of 3 wafers
26	n-type Si:P	[100]	3″	380	P/E	FZ 45–52	SEMI Prime, 2Flats, Empak cst
27	n-type Si:P	[100]	3″	300	P/P	FZ 0.8–2.5	SEMI Prime, 2Flats, Empak cst
28	n-type Si:P	[100]	3″	300	P/E	FZ 0.8–2.5	SEMI Prime, 2Flats, Empak cst, Back side originally polished but has scratches, Front is Epi–Ready
29	n-type Si:P	[211] ±0.5°	3″	380	P/P	FZ >3,000	SEMI Prime, 1Flat, Empak cst
30	n-type Si:P	[211–5°] ±0.5°	3″	508	P/P	FZ >50	Prime, 1Flat, Empak cst
31	n-type Si:P	[211–5°] ±0.5°	3″	508	P/P	FZ 25–75	Prime, 1Flat, Empak cst
32	n-type Si:P	[211–5°] ±0.5°	3″	508	P/P	FZ 25–75	Prime, 1Flat, Empak cst
33	n-type Si:P	[211–5°] ±0.5°	3″	508	P/P	FZ 25–75	Prime, 1Flat, Empak cst
34	n-type Si:P	[211–5°] ±0.5°	3″	508	P/P	FZ 25–75	Prime, 1Flat, Empak cst
35	n-type Si:P	[211–5°] ±0.5°	3″	508	P/P	FZ 25–75	Prime, 1Flat, Empak cst
36	n-type Si:P	[211] ±0.5°	3″	508	P/P	FZ 25–75	Prime, 1Flat, Empak cst
37	n-type Si:P	[211] ±0.5°	3″	1,016	P/P	FZ 25–75	Prime, 1Flat, Empak cst
38	n-type Si:P	[211] ±0.5°	3″	1,016	P/P	FZ 25–75	Prime, 1Flat, Empak cst
39	n-type Si:P	[211] ±0.5°	3″	1,016	P/P	FZ 25–75	SEMI TEST, 1Flat, Empak cst
40	n-type Si:P	[111] ±0.5°	3″	415 ±15	E/E	FZ 10,000–12,000	SEMI Prime, 1Flat, in Empak, Lifetime>1,500μs
41	n-type Si:P	[111] ±0.5°	3″	415 ±15	BROKEN	FZ 10,000–12,000	Broken E/E wafers, in two pieces, 1Flat, Lifetime>1,500μs,
42	n-type Si:P	[111] ±0.5°	3″	415 ±15	E/E	FZ 5,000–7,400	SEMI Prime, 1Flat, in Empak, MCC Lifetime>1,500μs
43	n-type Si:P	[111] ±0.5°	3″	675	P/P	FZ >5,000	SEMI Prime, 1Flat, Empak cst, TTV<4μm, Lifetime>800μs
44	n-type Si:P	[111] ±0.5°	3″	1,000	P/E	FZ >5,000	SEMI Prime, 2Flats, Empak cst
45	n-type Si:P	[111] ±0.5°	3″	380	P/E	FZ 4,000–8,000	SEMI Prime, 1Flat, in hard cassettes of 1 & 2 wafers
46	n-type Si:P	[111] ±0.5°	3″	380	BROKEN	FZ 4,000–8,000	Broken P/E wafer, 1Flat, Soft cst
47	n-type Si:P	[111] ±0.5°	3″	380	P/P	FZ 3,000–5,000	SEMI Prime, 1Flat, Empak cst
48	n-type Si:P	[111] ±0.5°	3″	380	P/E	FZ 3,000–5,000	SEMI Prime, 1Flat, in Empak, Lifetime>1,000μs,
49	n-type Si:P	[111] ±0.5°	3″	415 ±15	E/E	FZ 2,000–5,000	SEMI Prime, 1Flat, in Empak, Lifetime>1,500μs
50	n-type Si:P	[112–3° towards[11–1]] ±0.5°	3″	508	P/P	FZ 50–150	SEMI TEST, 1Flat, Empak cst
51	Intrinsic Si:-	[100]	3″	350	P/P	FZ >20,000	SEMI Prime, 1Flat, Empak cst
52	Intrinsic Si:-	[100]	3″	380	P/P	FZ >20,000	SEMI Prime, 1Flat, Empak cst, TTV<10μm, Bow/Warp<25μm
53	Intrinsic Si:-	[100]	3″	380	P/P	FZ >20,000	SEMI Prime, 1Flat, Empak cst, TTV<10μm, Bow/Warp<25μm
54	Intrinsic Si:-	[100]	3″	380	P/P	FZ >20,000	SEMI Prime, 1Flat, Empak cst, TTV<10μm, Bow/Warp<25μm
55	Intrinsic Si:-	[100]	3″	380	P/E	FZ >20,000	SEMI Prime, 1Flat, Empak cst
56	Intrinsic Si:-	[100]	3″	380	P/E	FZ >16,000	SEMI Prime, 1Flat, Empak cst
57	Intrinsic Si:-	[100]	3″	200	P/P	FZ >10,000	SEMI Prime, 1Flat, Empak cst
58	Intrinsic Si:-	[100]	3″	275	P/P	FZ >10,000	SEMI Prime, 1Flat, Empak cst
59	Intrinsic Si:-	[100]	3″	275	P/P	FZ >10,000	SEMI Prime, 1Flat, Empak cst
60	Intrinsic Si:-	[100]	3″	350	P/P	FZ >10,000	SEMI Prime, 1Flat, Empak cst
61	Intrinsic Si:-	[100]	3″	350	P/P	FZ 10,000–15,000	SEMI Prime, 1Flat, Empak cst, in cst of 15 & 14 wafers.
62	Intrinsic Si:-	[100]	3″	380	P/E	FZ 10,000–15,000	SEMI Prime, 1Flat, Empak cst, Lifetime>1,200μs, Ox<1E16/cc, C<1E16/cc.
63	Intrinsic Si:-	[100]	3″	380	P/E	FZ >10,000	SEMI Prime, 1Flat, Lifetime>1,000μs, hard cst
64	Intrinsic Si:-	[100]	3″	500	P/E	FZ >10,000	SEMI Prime, 1Flat, Empak cst
65	Intrinsic Si:-	[100]	3″	700	P/P	FZ >10,000	Test, scratrches and stains. Can be repolished for additional fee, 1Flat, Empak cst, TTV<5μm
66	Intrinsic Si:-	[111] ±0.5°	3″	380	P/P	FZ >20,000	SEMI Prime, 1Flat, Empak cst
67	Intrinsic Si:-	[111] ±0.5°	3″	380	P/E	FZ >20,000	SEMI Prime, 1Flat, Empak cst
68	Intrinsic Si:-	[111] ±0.5°	3″	1,400	C/C	FZ 8,000–20,000 {8,000–80,000}	SEMI, 1Flat, Lifetime>800μm, in hard cassettes of 3 & 5 wafers
69	Intrinsic Si:-	[112]	3″	380	P/P	FZ >5,000	SEMI Prime, 1Flat, Lifetime>2,000μs, in Empak cassettes of 4 wafers
70	p-type Si:B	[110] ±0.5°	3″	380	P/E	>100	SEMI Prime, Primary Flat @ [111], Secondary @ [111] 70.5° from Primary, in hard cassettes of 1, 2 & 2 wafers
71	p-type Si:B	[110] ±0.5°	3″	380	P/E	>60	SEMI Prime, Primary Flat @ [111], Secondary @ [111] 70.5° from Primary, Empak cst
72	p-type Si:B	[110] ±0.5°	3″	860	E/E	15–50	SEMI, 2Flats, Empak cst
73	p-type Si:B	[110] ±0.5°	3″	600	P/P	8–12	SEMI Prime, 1Flat, in Empak cassettes of 5 wafers
74	p-type Si:B	[110] ±0.25°	3″	380	P/E	2–4	SEMI Prime, 2Flats @[111] 109.5° apart, Empak cst
75	p-type Si:B	[110] ±0.5°	3″	360	P/P	1–10	SEMI Prime, 2Flats, TTV<1μm, 1–2 weeks ARO o repolish
76	p-type Si:B	[110] ±0.5°	3″	381	P/E	0.085–0.115	SEMI Prime, Primary Flat @ [111]±0.5°, Secondary @ [111] 109.5° CW from Primary
77	p-type Si:B	[110] ±0.5°	3″	381	P/E	0.085–0.115	SEMI Prime, Primary Flat @ [111]±0.5°, Secondary @ [111] 109.5° CW from Primary, in Epak cassettes of 6, 7 & 7 wafers
78	p-type Si:B	[110] ±0.3°	3″	381	P/E	0.0448–0.0672	SEMI Prime, 2Flats, Primary @ [111], Secondary @ [111] 109.5±2° CW from Primary, hard cst
79	p-type Si:B	[110] ±0.3°	3″	381	P/E	0.0448–0.0672	SEMI Prime, 2Flats, Primary @ [111], Secondary @ [111] 109.5±2° CW from Primary, in hard cassettes of 5 wafers
80	p-type Si:B	[110] ±0.5°	3″	381	P/E	0.003–0.005	SEMI Prime, Empak cst, Primary Flat @ [111]±0.5°, Secondary Flat @ [111] (109.5±2° CW from Primary)
81	p-type Si:B	[100]	3″	600	P/P	>20	SEMI Prime, 1Flat, TTV<1.4μm, Empak cst
82	p-type Si:B	[100]	3″	280 ±5	P/P	10–20	SEMI Prime, Empak cst
83	p-type Si:B	[100]	3″	275	P/P	5–10	SEMI Prime, 2Flats, TTV<5μm, Empak cst
84	p-type Si:B	[100]	3″	380	P/E	5–10	SEMI Prime, 2Flats, Empak cst, TTV<5μm
85	p-type Si:B	[100]	3″	380	P/E	5–10	SEMI, 2Flats, Empak cst
86	p-type Si:B	[100]	3″	350	P/P	3–4	SEMI Prime, 2Flats, Empak cst
87	p-type Si:B	[100] ±1°	3″	300	P/P	1–20	SEMI Prime, 1Flat, Empak cst
88	p-type Si:B	[100]	3″	375	P/P	1–100 {1.6–5.5}	SEMI Prime, 2Flats, TTV<4μm, Empak cst
89	p-type Si:B	[100] ±1°	3″	375	P/P	1–10	SEMI Prime, Empak cst
90	p-type Si:B	[100] ±1°	3″	381	P/P	1–10	SEMI Prime, Empak cst, TTV<1μm
91	p-type Si:B	[100] ±1°	3″	381±50µm	P/E	1–10	SEMI Prime, 2Flats, Empak cst
92	p-type Si:B	[100]	3″	500	P/P	1–30	SEMI Prime, 2Flats, Empak cst, Both Sides Epi–Ready Polish
93	p-type Si:B	[100]	3″	500	P/P	1–100	SEMI Prime, 2Flats, TTV<1μm, Empak cst
94	p-type Si:B	[100]	3″	500	P/E	1–10	SEMI Prime, 2Flats, Empak cst
95	p-type Si:B	[100]	3″	725	C/C	1–100	SEMI Prime, 1Flat, Empak cst, TTV<1μm
96	p-type Si:B	[100]	3″	1,500	P/P	1–20	Prime, 2Flats, Individual cst
97	p-type Si:B	[100]	3″	5,000	P/E	1–20 {6–8}	SEMI Prime, 2Flats, Individual cst
98	p-type Si:B	[100]	3″	10,000	P/E	1–20	SEMI Prime, 2Flats, Individual cst, sealed in group of 2 wafers
99	p-type Si:B	[100]	3″	10,000	P/E	1–16	SEMI Prime, 2Flats, Individual cst
100	p-type Si:B	[100]	3″	300	P/P	0.5–10.0	SEMI Prime, 1Flat, TTV<2μm, Empak cst
101	p-type Si:B	[100]	3″	315	P/P	0.5–10.0	SEMI Prime, 1Flat, TTV<3μm, Empak cst
102	p-type Si:B	[100]	3″	315	P/P	0.5–10.0	SEMI Prime, 1Flat, Empak cst, TTV<3μm
103	p-type Si:B	[100]	3″	3,050 ±50	C/C	>0.5	1Flat, Individual cst (can be ordered singly)
104	p-type Si:B	[100]	3″	250	P/E	0.15–0.20	SEMI TEST (Scratches), 2Flats, in sealed Empak cassettes of 3 wafers
105	p-type Si:B	[100]	3″	250	BROKEN	0.15–0.20	Broken wafers, in Epak cst
106	p-type Si:B	[100–4° towards[110]] ±0.5°	3″	230	P/E	0.01–0.02	SEMI Prime, 2Flats, Empak cst, TTV<5μm
107	p-type Si:B	[100]	3″	275	P/P	0.01–0.04	SEMI Test, Unsealed, Empak cst
108	p-type Si:B	[100]	3″	300	P/E	0.01–0.02	SEMI Prime, 2Flats, Empak cst
109	p-type Si:B	[100]	3″	380	P/P	0.01–0.02	SEMI Prime, 2Flats, Empak cst
110	p-type Si:B	[100]	3″	380	P/P	0.01–0.02	SEMI Prime, 2Flats, Empak cst
111	p-type Si:B	[100]	3″	380	P/E	0.01–0.02	SEMI Prime, 2Flats, Empak cst
112	p-type Si:B	[100–4° towards[110]] ±0.5°	3″	381	P/E	0.01–0.02	SEMI Prime, 2Flats, Empak cst, TTV<5μm
113	p-type Si:B	[100]	3″	435 ±10	E/E	0.01–0.02 {0.011–0.013}	SEMI, 2Flats, TTV<2μm, coin roll
114	p-type Si:B	[100]	3″	450 ±10	E/E	0.01–0.02	SEMI Prime, 2Flats, Empak cst
115	p-type Si:B	[100]	3″	380	P/P	0.001–0.005	SEMI Prime, 2Flats, Empak cst
116	p-type Si:B	[100]	3″	380	P/E	0.001–0.005	SEMI Prime, 2Flats, Empak cst
117	p-type Si:B	[100]	3″	380	P/E	0.001–0.005	SEMI Prime, 2Flats, Empak cst
118	p-type Si:B	[100]	3″	500	P/P	0.001–0.005	SEMI Prime, 2Flats, Empak cst
119	p-type Si:B	[5,5,12] ±0.5°	3″	380	P/E	1–10	SEMI Prime, 1Flat, Empak cst
120	p-type Si:B	[211] ±0.5°	3″	525	P/P	>10	SEMI Prime, 1Flat, Empak cst
121	p-type Si:B	[211] ±0.5°	3″	525	P/E	>10	SEMI Prime, 1Flat, Empak cst
122	p-type Si:B	[111–28° towards[001]] ±0.5°	3″	400	P/E	>20	SEMI TEST (Half of wafers polished on wrong side, some have etch patterns), Primary Flat @ <112>, hard cst
123	p-type Si:B	[111–28° towards[001]] ±0.5°	3″	400	P/E	>20	SEMI Test, Primary Flat @ <112> Half of wafers polished on wrong side, some have etch patterns
124	p-type Si:B	[111–4°] ±0.5°	3″	380	P/E	8–12	SEMI Prime, 1Flat, Empak cst
125	p-type Si:B	[111–4°] ±0.5°	3″	380	P/E	8–12	SEMI Prime, 1Flat, Empak cst
126	p-type Si:B	[111–2.5°] ±0.5°	3″	380	P/E	1–5	SEMI Prime, 1Flat, Empak cst
127	p-type Si:B	[111] ±0.5°	3″	508	E/E	0.792–1.008	SEMI TEST, 1Flat, TTV<2μm, Epak cst
128	p-type Si:B	[111–4°] ±0.5°	3″	381	P/EOx	0.01–0.02 {0.0145–0.0148}	SEMI Prime, 1Flat, Empak cst
129	p-type Si:B	[111]	3″	250	P/E	0.001–0.002	SEMI Prime, 1Flat, Empak cst
130	n-type Si:P	[510] ±0.5°	3″	1,000	P/E	5–10	Prime, NO Flats, Empak cst
131	n-type Si:P	[110] ±0.5°	3″	381	P/E	11–15	SEMI Prime, 2Flats, Individual cst, TTV<15μm
132	n-type Si:P	[110] ±0.5°	3″	200	P/P	1–10	SEMI Prime, SEMI Flat (one) @ [1,–1,0].
133	n-type Si:P	[110] ±0.5°	3″	381	P/E	1–10	SEMI Prime, SEMI Flat (one) @ [1,–1,0].
134	n-type Si:P	[110] ±0.5°	3″	381	P/E	1–10	SEMI Prime, SEMI Flat (one) @ [1,–1,0], in Empak cassettes of 2, 7 & 7 wafers
135	n-type Si:As	[110] ±0.5°	3″	420	P/P	0.001–0.007	SEMI Prime, in Empak, Primary Flat @ [1,–1,0]
136	n-type Si:P	[100]	3″	5,000	P/E	>20	Rectangular wafers (80×40mm), Prime polish, Individual cst
137	n-type Si:P	[100] ±1°	3″	2,286 ±13	P/P	15–28	SEMI Prime, 1Flat, TTV<1μm, Sealed in individual csts, in groups of 5 wafers
138	n-type Si:P	[100]	3″	300	P/P	10–30	SEMI Prime, 2Flats, Empak cst, TTV<6μm
139	n-type Si:P	[100]	3″	300	P/P	10–30	SEMI Prime, 2Flats, in Empak cassettes of 6 & 7 wafers
140	n-type Si:P	[100]	3″	300	P/P	10–30	SEMI Prime, 2Flats, Empak cst, TTV<6μm
141	n-type Si:P	[100]	3″	300	P/P	10–30	SEMI Prime, 2Flats, Empak cst, TTV<6μm (cassettes of 11, 18, 22 and 24 wafers)
142	n-type Si:P	[100] ±1°	3″	300 ±10	P/P	5–15	SEMI Prime, TTV<1μm, Empak cst
143	n-type Si:P	[100]	3″	381	P/E	5–10	SEMI Prime, 1Flat, Empak cst
144	n-type Si:P	[100]	3″	350	P/P	4.3–6.7	SEMI Prime, 2Flats, Empak cst
145	n-type Si:P	[100]	3″	15,000	P/E	2–3	SEMI Prime, 1Flat, Individual cst
146	n-type Si:P	[100] ±1°	3″	500	P/P	1–100	SEMI Prime, TTV<2μm, Empak cst
147	n-type Si:P	[100–4°] ±0.5°	3″	500	P/E	1–20	Prime, 2Flats, Empak cst
148	n-type Si:P	[100]	3″	1,000	P/P	1–5	SEMI Prime, 2Flats, hard cst
149	n-type Si:P	[100]	3″	1,000	P/E	1–20	SEMI Prime, 2Flats, Empak cst
150	n-type Si:P	[100]	3″	5,000	P/E	1–100	SEMI Prime, 1Flat, Individual cst
151	n-type Si:Sb	[100]	3″	300	P/E	0.02–0.04 {0.021–0.031}	SEMI Prime, 2Flats, hard cst
152	n-type Si:Sb	[100]	3″	300	P/E	0.02–0.04	SEMI Prime, 2Flats, in hard cassettes of 2 wafers
153	n-type Si:Sb	[100]	3″	381	P/E	0.008–0.020	SEMI Prime, 2Flats, Empak cst
154	n-type Si:As	[100]	3″	380	P/EOx	0.001–0.005	SEMI Prime, 2Flats, LTO Back–side seal 0.5μm thick, Empak cst
155	n-type Si:As	[100]	3″	380	P/E	0.001–0.005	SEMI Prime, 2Flats, Empak cst
156	n-type Si:As	[100]	3″	380	P/E	0.001–0.005	SEMI Prime, 2Flats, TTV<4μm, Bow<10μm, Warp<20μm, in Empak cassettes of 7 wafers
157	n-type Si:As	[100]	3″	380	P/E	0.001–0.005	SEMI Test, 2Flats, Empak cst, Broken wafer removed from cassette
158	n-type Si:As	[211] ±0.5°	3″	550	E/E	0.0030–0.0042	SEMI Prime, 1Flat, in Empak cassettes of 7, 8 & 8 wafers
159	n-type Si:P	[111–4°] ±0.5°	3″	250	P/E	50–220 {61–95}	Prime, NO Flats, Empak cst
160	n-type Si:P	[111] ±0.5°	3″	1,400	P/E	25–35	SEMI Prime, 1Flat, in single wafer cassettes, sealed in groups of 5
161	n-type Si:P	[111–5° towards[110]] ±0.25°	3″	1,000	P/E	>5	SEMI Prime, 1Flat, hard cst
162	n-type Si:P	[111–5° towards[110]] ±0.25°	3″	1,000	P/E	>5	SEMI Prime, 1Flat, in hard cassettes of 6, 6 & 7 wafers
163	n-type Si:P	[111–5° towards[110]] ±0.25°	3″	1,300	P/E	>5	SEMI Prime, 1Flat, hard cst
164	n-type Si:P	[111–0.5° towards[110]] ±0.25°	3″	1,400	E/E	>5	SEMI, 1Flat, LaserMark, in opened hard cast
165	n-type Si:P	[111] ±0.5°	3″	350	P/E	1–10	SEMI Prime, 1Flat, Empak cst
166	n-type Si:P	[111–2.5°] ±0.5°	3″	380	P/E	1–3	SEMI Prime, 2Flats, Empak cst
167	n-type Si:P	[111] ±0.5°	3″	380	P/E	1–10	SEMI Prime, Empak cst
168	n-type Si:P	[111–3.0°] ±1°	3″	381	P/E	1–20 {1.7–5.7}	SEMI Test, 2Flats, Empak cst
169	n-type Si:P	[111] ±0.5°	3″	570	P/P	1–10	SEMI Prime, Empak cst
170	n-type Si:P	[111] ±0.5°	3″	2,000	P/P	1–20	SEMI Prime, 1Flat, Individual cst Group of 5 wafers
171	n-type Si:P	[111] ±0.5°	3″	381	P/E	0.1–0.6	SEMI Prime, 2Flats, Empak cst
172	n-type Si:Sb	[111] ±0.5°	3″	380	P/E	0.019–0.026	SEMI Prime, 2Flats, in Empak cassettes of 5 wafers
173	n-type Si:Sb	[111] ±0.5°	3″	380	P/E	0.01–0.02 {0.010–0.013}	SEMI Prime, 2Flats, Empak cst
174	n-type Si:Sb	[111] ±0.5°	3″	380	P/E	0.01–0.02	SEMI Prime, 2Flats, Empak cst
175	n-type Si:Sb	[111]	3″	380	P/E	0.008–0.025	SEMI Prime, 2Flats, Empak cst
176	n-type Si:Sb	[111] ±0.5°	3″	380	P/E	0.01–0.02	SEMI Prime, 2Flats, Empak cst
177	n-type Si:As	[111] ±0.5°	3″	380	P/E	0.001–0.005	SEMI Prime, 2Flats, TTV<5μm, Empak cst
178	n-type Si:As	[111–4°] ±0.5°	3″	380	P/E	0.001–0.005	SEMI Prime, 2Flats, Empak cst
179	n-type Si:As	[111] ±0.5°	3″	380	P/E	0.001–0.005	SEMI Prime, 2Flats, Empak cst
180	n-type Si:As	[112–3° towards[111]] ±0.5°	3″	890	P/E	0.002–0.003	Prime, 2Flats, Empak cst
181	n-type Si:As	[225]	3″	300	P/E	0.001–0.003	SEMI Prime, 1Flat, Empak cst
182	n-type Flats	[100]	3″	380	P/P	0.01–0.02	SEMI Prime, 2Flats, Empak cst
183	p-type Si:B	[100]	3″	380	OxP/EOx	10–20	SEMI Prime, 2Flats, hard cst, DRY Thermal Oxide (5–7)nm thick, on both sides
184	p-type Si:B	[100]	3″	500	OxP/POx	0.01–0.02	SEMI Prime, 2Flats, Empak cst, Both–sides–polished, with Thermal Oxide 1.0µm±5% thick
185	Si	???	3″	?	P/P	?	SEMI TEST (Unsealed), Empak cst
186	Si	???	3″	?	P/P	?	SEMI TEST (Unsealed), Empak cst
187	n-type Si:P	[100]	3″	381	P/P	FZ 100–500	SEMI Prime, 2Flats, Empak cst
188	n-type Si:P	[111]	3″	300	P/E	FZ 61–95	Prime, NO Flats, Empak cst
189	p-type Si:B	[110]	3″	750	P/E	>100	PF<111> SF 70.5°
190	p-type Si:B	[110]	3″	380	P/E	1–10	1 F @ <1,–1,0>
191	p-type Si:B	[100]	3″	380	P/P	80–170	SEMI Prime, 2Flats, Empak cst
192	p-type Si:B	[100]	3″	300	P/P	30–35	SEMI Prime, 2Flats, Empak cst
193	p-type Si:B	[100]	3″	200	P/E	10–20	SEMI Prime, 2Flats, Empak cst
194	p-type Si:B	[100]	3″	300	P/E	5–20	PF <110>
195	p-type Si:B	[100]	3″	350	P/E	5–20	SEMI Prime, 2Flats, Empak cst
196	p-type Si:B	[100]	3″	3,000	P/P	4–6	Prime, NO Flats, Individual cst
197	p-type Si:B	[100]	3″	250	P/P	1–10	SEMI Prime, 2Flats, Empak cst
198	p-type Si:B	[100]	3″	300	P/P	1–10	SEMI Prime, 2Flats, Empak cst
199	p-type Si:B	[100]	3″	350	P/P	1–10	SEMI Prime, 2Flats, Empak cst
200	p-type Si:B	[100]	3″	380	P/E	1–10	SEMI Prime, 2Flats, Empak cst
201	p-type Si:B	[100]	3″	380	P/E	1–20	SEMI Prime, 1Flat, Empak cst
202	p-type Si:B	[100]	3″	380	P/E	1–20	SEMI Prime, 2Flats, Empak cst
203	p-type Si:B	[100]	3″	580	P/P	1–100	SEMI Prime, 1Flat, TTV<1μm, Lasermark, Empak cst
204	p-type Si:B	[100]	3″	950	P/E	1–20	SEMI Prime, 2Flats, Empak cst
205	p-type Si:B	[100]	3″	1,000	P/P	1–19	SEMI Prime, 2Flats, Empak cst
206	p-type Si:B	[100]	3″	5,000	P/E/P	1–10	Prime, NO Flats, Individual cst
207	p-type Si:B	[100]	3″	5,000	P/E	1–30	Prime, NO Flats, Individual cst
208	p-type Si:B	[100]	3″	10,000	P/E	1–16	Prime, NO Flats, Individual cst
209	p-type Si:B	[100]	3″	350	P/E/P	0.100–0.200	SEMI Prime, 2Flats, Empak cst
210	p-type Si:B	[100]	3″	400	P/P	0.1–0.2	SEMI Prime, 2Flats, Empak cst
211	p-type Si:B	[100]	3″	380	P/P	0.070–0.090	SEMI Prime, 2Flats, Empak cst
212	p-type Si:B	[100]	3″	400	P/P	0.015–0.016	SEMI Prime, 2Flats, Empak cst
213	p-type Si:B	[100]	3″	380	P/P	0.01–0.02	SEMI Prime, 2Flats, Empak cst
214	p-type Si:B	[100]	3″	380	P/E	0.003–0.004	SEMI Prime, 2Flats, Empak cst
215	p-type Si:B	[100]	3″	100	P/P	0.0026–0.0030	SEMI Prime, 2Flats, Empak cst
216	p-type Si:B	[100]	3″	300	P/E	0.002–0.003	SEMI Prime, 2Flats, Empak cst
217	p-type Si:B	[100]	3″	380	P/E	0.001–0.005	SEMI Prime, 2Flats, Empak cst
218	p-type Si:B	[100]	3″	525	P/P	0.001–0.005	SEMI Prime, 2Flats, Empak cst
219	p-type Si:B	[911]	3″	380	P/E	5–6	PF <110>
220	p-type Si:B	[111]	3″	380	P/E	18–21	SEMI Prime, 1Flat, Empak cst
221	p-type Si:B	[111]	3″	775	P/E	13–14	Prime, NO Flats, Empak cst
222	p-type Si:B	[111]	3″	1,000	P/E	10–20	Prime, NO Flats, Empak cst
223	p-type Si:B	[111–4°]	3″	380	P/E	8–12	SEMI Prime, 1Flat, Empak cst
224	p-type Si:B	[111]	3″	2,000	P/P	8–9	SEMI Prime, 2Flats, Individual cst
225	p-type Si:B	[111]	3″	625	P/P	5–8	SEMI Prime, 1Flat, Empak cst
226	p-type Si:B	[111]	3″	2,300	P/P	4–7	SEMI Prime, 1Flat, Individual cst
227	p-type Si:B	[111]	3″	500	P/E	2–6	SEMI Prime, 1Flat, Empak cst
228	p-type Si:B	[111]	3″	500	P/E	2–8	SEMI Prime, 1Flat, Empak cst
229	p-type Si:B	[111]	3″	300	P/E	1.4–1.8	Prime, NO Flats, Empak cst
230	p-type Si:B	[111]	3″	800	P/E	1–20	SEMI Prime, 1Flat, Empak cst
231	p-type Si:B	[111]	3″	300	P/P	0.3–0.4	SEMI Prime, 1Flat, Empak cst
232	p-type Si:B	[111]	3″	250	P/E	0.10–0.12	SEMI Prime, 1Flat, Empak cst
233	p-type Si:B	[111]	3″	300	P/E	0.03–0.04	SEMI Prime, 1Flat, Empak cst
234	p-type Si:B	[111]	3″	380	P/E	0.014–0.015	SEMI Prime, 1Flat, Empak cst
235	p-type Si:B	[111–1°]	3″	1,000	P/E	0.014–0.016	SEMI Prime, 1Flat, Empak cst
236	p-type Si:B	[111]	3″	600	P/P	0.005–0.020	SEMI Prime, 1Flat, Empak cst
237	p-type Si:B	[111–3.5°]	3″	380	P/E	0.004–0.005	SEMI Prime, 1Flat, Empak cst
238	n-type Si:P	[510]	3″	1,000	P/E/P	5–10	Prime, NO Flats, Empak cst
239	n-type Si:P	[100]	3″	750	P/E	100–130	SEMI Prime, 2Flats, Empak cst
240	n-type Si:P	[100]	3″	9,500	P/E	15–22	SEMI Prime, 1Flat, Individual cst
241	n-type Si:P	[100]	3″	300	P/E	10–20	SEMI Prime, 1Flat, Empak cst
242	n-type Si:P	[100]	3″	380	P/E	10–20	SEMI Prime, 2Flats, Empak cst
243	n-type Si:P	[100]	3″	3,000	P/E/P	10–12	Prime, NO Flats, Individual cst
244	n-type Si:P	[100]	3″	1,000	P/E	6–10	Prime, NO Flats, Empak cst
245	n-type Si:P	[100]	3″	1,500	P/E	5–7	SEMI Prime, 2Flats, Empak cst
246	n-type Si:P	[100]	3″	350	P/E	4.3–6.7	SEMI Prime, 2Flats, Empak cst
247	n-type Si:P	[100]	3″	500	P/E	4–10	Prime, NO Flats, Empak cst
248	n-type Si:P	[100]	3″	200	P/E	1–10	SEMI Prime, 2Flats, Empak cst
249	n-type Si:P	[100]	3″	280	P/E	1–20	SEMI Prime, 2Flats, Empak cst
250	n-type Si:P	[100]	3″	300	P/P	1–20	SEMI Prime, 2Flats, Empak cst
251	n-type Si:P	[100]	3″	350	P/P	1–25	SEMI Prime, 1Flat, TTV<1μm, Empak cst
252	n-type Si:P	[100]	3″	380	P/E	1–20	SEMI Prime, 2Flats, Empak cst
253	n-type Si:P	[100]	3″	600	P/E	1–10	SEMI Prime, 2Flats, Empak cst
254	n-type Si:P	[100]	3″	1,000	P/E	1–100	Prime, NO Flats, Empak cst
255	n-type Si:P	[100]	3″	1,800	P/P	1–5	SEMI Prime, 2Flats, Individual cst
256	n-type Si:P	[100]	3″	5,000	P/E	1–30	Prime, NO Flats, Individual cst
257	n-type Si:P	[100]	3″	6,000	P/E	1–20	SEMI Prime, 2Flats, Individual cst
258	n-type Si:P	[100]	3″	12,000	P/E	1–20	SEMI Prime, 2Flats, Individual cst
259	n-type Si:Sb	[100]	3″	800	P/E	0.022–0.028	SEMI Prime, 2Flats, Empak cst
260	n-type Si:Sb	[100]	3″	380	P/E	0.021–0.023	SEMI Prime, 2Flats, Empak cst
261	n-type Si:Sb	[100]	3″	500	P/E	0.021–0.022	SEMI Prime, 2Flats, Empak cst
262	n-type Si:As	[100]	3″	380	P/E	0.0033–0.0034	SEMI Prime, 2Flats, Empak cst
263	n-type Si:As	[100]	3″	1,000	P/E	0.001–0.005	SEMI Prime, 1Flat, Empak cst
264	n-type Si:P	[100]	3″	381	P/E	<0.05 {1.30–420.00}	SEMI Prime, 2Flats
265	n-type Si:P	[211]	3″	450	P/P	50–65	SEMI Prime, 2Flats, Empak cst
266	n-type Si:P	[111–4°]	3″	250	P/E	50–220	Prime, NO Flats, Empak cst
267	n-type Si:P	[111]	3″	1,500	P/P	31–35	SEMI Prime, 1Flat, Empak cst
268	n-type Si:P	[111]	3″	10,000	P/E	20–60	SEMI Prime, 1Flat, Individual cst
269	n-type Si:P	[111–3°]	3″	380	P/E	19–25	SEMI Prime, 2Flats, Empak cst
270	n-type Si:P	[111]	3″	3,000	P/E	10–20	SEMI Prime, 2Flats, Individual cst
271	n-type Si:P	[111–0.5° towards[110]] ±0.25°	3″	1,400	P/E	>5	SEMI Prime, 1Flat, hard cst, LaserMark
272	n-type Si:P	[111]	3″	6,000	P/E	5–10	SEMI Prime, 1Flat, Individual cst
273	n-type Si:P	[111]	3″	525	P/E	4.5–5.0	SEMI Prime, 2Flats, Empak cst
274	n-type Si:P	[111]	3″	500	P/P	4–6	Prime, NO Flats, Empak cst
275	n-type Si:P	[111]	3″	275	P/E	3–6	SEMI Prime, 1Flat, Empak cst
276	n-type Si:P	[111]	3″	250	P/E	1.0–5.5	SEMI Prime, 2Flats, Empak cst
277	n-type Si:P	[111]	3″	350	P/E	1–10	SEMI Prime, 2Flats, Empak cst
278	n-type Si:P	[111]	3″	6,000	P/E	1–20	SEMI Prime, 2Flats, Individual cst
279	n-type Si:P	[111]	3″	1,000	P/P	0.5–2.0	SEMI Prime, 2Flats, Empak cst
280	n-type Si:Sb	[111]	3″	300	P/E	0.019–0.026	SEMI Prime, 2Flats, Empak cst
281	n-type Si:Sb	[111–4°]	3″	380	P/E	0.015–0.017	SEMI Prime, 2Flats, Empak cst
282	n-type Si:Sb	[111–2.5°]	3″	300	P/E	0.014–0.018	SEMI Prime, 2Flats, Empak cst
283	n-type Si:Sb	[111–3.5°]	3″	380	P/E	0.014–0.016	SEMI Prime, 2Flats, Empak cst
284	n-type Si:Sb	[111–3°]	3″	300	P/E	0.011–0.016	SEMI Prime, 2Flats, Empak cst
285	n-type Si:Sb	[111]	3″	380	P/E	0.008–0.025	SEMI Prime, 2Flats, Empak cst
286	n-type Si:As	[111–0.5°]	3″	380	P/P	0.003–0.005	SEMI Prime, 2Flats, Empak cst
287	n-type Si:As	[111]	3″	380	P/E/P	0.002–0.005	SEMI Prime, 1Flat, Empak cst
288	n-type Si:As	[111–2.5°]	3″	380	P/E	0.002–0.005	SEMI Prime, 2Flats, Empak cst
289	n-type Si:As	[111–4°]	3″	380	P/E	0.002–0.005	SEMI Prime, 2Flats, Empak cst