Description
200mm Oxide Wafer 8 inch Oxide Wafer
Maker: USIC
MOQ: 1 package with 25pcs. EXWORKS (Taoyuan,Taiwan). HTS code 381800.
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Diameter (mm) :200mm
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Thickness (μm) : 725±25
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Growth Method : MCZ/CZ
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Type :P/N
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Dopant : B,Ph,As,Sb
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Crystal Orientation : <100>
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Resistivity (Ohm-cm) : 0.1-100
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TTV(μm) : <25
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Bow/Warp (μm) : <50
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Oxide Layer Thickness (A) : 1,000-20,000
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Oxide Layer Thickness Tolerance (%) : +/-5
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Particle : >0.3μm Max 30ea or N.S
- Must follow USA DOC import and export regulations.
- These wafer are subject to prior sale. Buyers accept backorder with a lead time (TBD).
- The photo here is only for your reference. It was not from the real wafers.
Silicon wafer deposited oxide layer due to its excellent dielectric properties which is widely applied in semiconductor industry. Thermal Oxide is typically grown in a diffusion furnace (either vertical or horizontal one) and is grown at high temperatures from 800°C to 1200°C via either a “Wet” or “Dry” growth technique. USIC provides high quality thermal oxide wafers especially in diameter of 200mm and 300mm. Our “IMSi Oxide Wafer” uses thermal deposited oxide layer. Compared with CVD technique, it has demonstrated higher uniformities, less defects, and higher dielectric strength than that of CVD deposited oxide layer. USIC “IMSi Oxide Wafer” has successfully passed and qualified by several tier 1 company in foundry and OSAT field.
Please contact us if you are also interested in the the following 200mm 300mm wafers/silicon ingot.
- 200mm Si Test Wafer
- 300mm Si Test Wafer
- 200mm Al Wafer
- 300mm Al Wafer
- 200mm Si Oxide Wafer
- 300mm Si Oxide Wafer
- 300mm Silicon Ingot
- 350mm Silicon Ingot
