Tystar Equipment: MINI SERIES | STANDARD SERIES | NANO SEREIS | SOLAR SERIES | Photo-Enhanced CVD | Tystar Instruments: GAS CONTROL| MASS FLOW TESTER | FLOW CALIBRATOR
LPCVD refers to a thermal process used to deposit thin films from gas-phase precursors at subatmospheric pressures. Process conditions are typically selected so that the growth rate is limited by the rate of the surface reaction, which is temperature-dependent. The temperature can be controlled with great precision, resulting in excellent within-wafer, wafer-to-wafer, and run-to-run uniformities. Tystar has years of experience and an industry-wide reputation for its expertise in the following LPCVD processes:
- Silicon Carbide Devices
- Silicon Nitride Resonators
- Doped Silicon by LPCVD
- POLYSILICON LPCVD WITH SILANE (SiH4)
- POLYSILICON LPCVD WITH DISILANE (Si2H6)
- LTO, DOPED LTO, BPSG, BSG, AND PSG LPCVD
- HTO LPCVD
- TEOS LPCVD
- Silicon Nitride LPCVD
- Low-Stress Silicon Nitride LPCVD
- Stochiometric Silicon Nitride LPCVD
- Silicon Oxynitride (SiNxOy) LPCVD
- Silicon Germanium (Si-Ge) LPCVD
- SIPOS (Semi-Insulating Polycrystalline Silicon)
- Polycrystalline Silicon Carbide
- Epitaxial Silicon
- Nano Materials LPCVD
