Tystar Equipment: MINI SERIES | STANDARD SERIES | NANO SEREIS | SOLAR SERIES | Photo-Enhanced CVD | Tystar Instruments: GAS CONTROL| MASS FLOW TESTER | FLOW CALIBRATOR
High temperature silicon dioxide is formed by the reaction of N2O and dichlorosilane. The oxide quality is comparable to the thermal oxidation process (with the exception of a chlorine impurity), but the reaction does not consume the silicon substrate.
- Typical Film Thickness: 0.45 µm
- Batch Size: 50
- Deposition Rate: 5 – 10 nm/min. (50 – 100 Å/min.)
- Deposition Gases: Dichlorosilane, Nitrous Oxide
- Deposition Temperature: 800 – 900 °C
- Index of Refraction: 1.45 – 1.47
Applications: flash memory, shallow trench isolation, side-wall spacers, inter-poly dielectrics.
